• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.7
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• pp.1074-1078
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• 2002

In this paper, we designed double gate(DG) MOSFET structure which has main gate(MG) and two side gates(SG). We have simulated using TCAD simulator U .WOSFET have the main gate length of %m and the side gate length of 70nm. Then, u'e have investigated the pinch-off characteristics, drain voltage is changed from 0V to 1.5V at VMG=1.5V and VSG=3.0V. In spite of the LMG is very small, we have obtained a very good pinch-off characteristics. Therefore, we know that the DG structure is very useful at nano scale.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.4
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• pp.719-724
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• 2003

In this paper, we have presented the simulation results about threshold voltage of nano scale lightly doped drain (LDD) MOSFET with halo doping profile. Device size is scaled down from 100nm to 40nm using generalized scaling. We have investigated the threshold voltage for constant field scaling and constant voltage scaling using the Van Dort Quantum Correction Model (QM) and direct tunneling current for each gate oxide thickness. We know that threshold voltage is decreasing in the constant field scaling and increasing in the constant voltage scaling when gate length is reducing, and direct tunneling current is increasing when gate oxide thickness is reducing. To minimize the roll off characteristics for threshold voltage of MOSFET with decreasing channel length, we know $\alpha$ value must be nearly 1 in the generalized scaling.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.2
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• pp.13-19
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• 2010

Due to the rapid spread of mobile handheld devices, industrial demands for micro-scale holes with a diameter of even smaller than $10{\mu}m$ in sapphire/silicon wafers have been increasing. Holes in sapphire wafers are for heat dissipation from LEDs; and those in silicon wafers for interlayer communication in three-dimensional integrated circuit (IC). We have developed a sapphire wafer driller equipped with a 532nm laser in which a cooling chuck is employed to minimize local heat accumulation in wafer. Through the optimization of process parameters (pulse energy, repetition rate, number of pulses), quality holes with a diameter of $30{\mu}m$ and a depth of $100{\mu}m$ can be drilled at a rate of 30holes/sec. We also have developed a silicon wafer driller equipped with a 355nm laser. It is able to drill quality through-holes of $15{\mu}m$ in diameter and $150{\mu}m$ in depth at a rate of 100holes/sec.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.16 no.2
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• pp.165-170
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• 2016

Nano-scale power splitter based on curved plasmonic waveguides are designed by utilizing the multimode interference (MMI) coupler. To analyze easily the adaptive properties of plasmonic curverd multimode interference coupler(PC-MMIC), the curved form transforms equivalently into a planar form by using conformal transformation method. Also, effective dielectric method and longitudinal modal transmission-line theory are used for simulating the light propagation and optimizing the structural parameters at 3-D guiding geometry. The designed $2{\times}2$ PC-MMIC does not work well for quasi-TM mode case due to the bending structure, and it does not exist 3dB coupling property, in which the power splitting ratio is 50%:50%, for quasi-TE mode case. Further, the coupling efficiency is better when the signal is incident at channel with large curvature radius than small curvature radius.

• Fashion & Textile Research Journal
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• v.18 no.5
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• pp.685-694
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• 2016

This study investigates the problems of fitness and motion suitability for Korean male military winter jackets (inner and outer) and provides data for new pattern development. We analyzed fitness and motion suitability by a questionnaire survey with 140 Korean male soldiers and a wearing evaluation with 7 subjects of central army male size. A survey of male soldiers indicated that the fitness and motion suitability satisfaction was over 3.0 (Likert scale) for both inner and outer jackets. There were opinions that the sleeve length was short for the inner jacket and the waist girth and hem girth was slightly large for the outer jacket. In the wearing evaluation results with subjects of central army male size, fitness of total length, sleeve length and collar height showed a score lower than 3.0 for the inner jacket and collar height on the outer jacket. The motion suitability result showed a low score (1.0-2.0) in an arm raising motion for the inner jacket and 2.0-3.0 at neck motion in the outer jacket. In conclusion, there is more dissatisfaction in inner jackets than outer jackets. For the inner jacket, sleeve is short, sleeve hem is narrow, collar height is a little high and the sleeve creeps up during arm motion. The waist girth and hem girth was slightly large and collar height was a little high for the outer jacket.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.8
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• pp.1926-1933
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• 2013

Many localization algorithms have been proposed for Wireless Sensor Networks (WSNs). The IEEE 802.15.4a-based location-aware-system can provide precise ranging distance between two mobile nodes. The mobile nodes can obtain their exact locations by using accurate ranging distances. However, the indoor environments contain various obstacles which cause non-line-of-sight (NLOS) conditions. In NLOS condition, the IEEE 802.15.4a-based location-aware system has a large scale location error. To solve the problem, we propose location error compensation in indoor environment by using MST-based topology control. Experimental and simulation results show that the proposed algorithm improves location accuracy in NLOS conditions.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.844-847
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• 2014

'Healthcare 3.0' paradigm, which comes from the convergence of medical and department of ICT(Information and Communication Technology), meets the government's 'creative economy'. It has emerged as new higher value-added markets and industries, created jobs, and got the 'land of opportunity'. Despite of the global recession, the health care market in the world from 2009 to now has earned a steady growth. The annual growth rate in domestic industrial scale is expected to more than 10% higher based on 153 trillion won in 2010. In particular, combination of health care and ICT, BT(BioTechnology), NT(NanoTtechnology), which is so called 'super-convergence', leap in the health care industry, is expected to open up a new paradigm. In addition, by 2020 all of the health care industry, the IT convergence industries account for the largest proportion, and more than 50,000 of the employment are to be expected. In this study, we survey and analyze problems of medical and IT convergence technology, the future of the medical and health care industry, the demanded healthcare IT staff, finally suggest education plan of human resources required in convergence industry of medical and IT.