• Title/Summary/Keyword: Nano-Plasma

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Anodic oxidation behavior of AZ31 Mg alloy in aqueous solution containing various NaF concentrations

  • Moon, Sungmo;Kwon, Duyoung
    • Journal of the Korean institute of surface engineering
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    • v.55 no.4
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    • pp.196-201
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    • 2022
  • This paper deals with anodic oxidation behavior of AZ31 Mg alloy in aqueous solutions containing various NaF concentrations from 0.01 M to 1 M. Three different voltage-time curves and anodic oxide formation behaviors appeared with concentration of NaF in deionized water. When NaF concentration is lower than 0.02 M, the voltage of AZ31 Mg alloy increased linearly and then reached a steady-state value more than 200 V, and large size pits and thin oxide layer were formed. When NaF concentration is between 0.05 M and 0.1 M, the voltage of AZ31 Mg alloy showed large periodic fluctuations of about 30 ~ 50 V around more than 200 V and large number of small particles were observed. If NaF concentration is higher than 0.2 M, PEO films can be formed without visible arcs under solution pH 6.5 ~ 7.5 by F- ions without help of OH- ions.

DC 열 플라즈마를 이용한 Cu, Fe 나노 입자 합성 연구

  • An, Gyeong-Seok;Son, Byeong-Gu;Lee, Mun-Won;Kim, Seong-In;Jo, Gwang-Seop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.223-223
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    • 2016
  • 산업 및 기술의 발전에 의해 많은 신소재들이 개발되고 있다. 그 중에서 금속 나노 분말의 경우, 자성소재, 차세대 MLCC, 전도성 페이스트, 살균 등 여러 산업분야에서 관심을 보이면서, 다양한 재료들이 개발되고 있는 추세이다. 그 중에서 금속 나노 분말은 입자 미세화에 따른 경도, 인성, 연성들의 기계적 특성 향상, 전자기적 기능의 향상 등 기존재료에 비해 우수한 물성, 새로운 기능의 발현이 입증되면서 차세대 소재로서 많은 연구가 진행되고 있다. 또한 최근에는 단순한 나노입자의 제조단계를 뛰어넘어 입경 및 입도의 제어 형상제어를 통한 입자 균일성이 요구되고 있다 DC 열 플라즈마를 이용한 나노입자 합성 방법은 초고온의 온도의 달성이 가능하여, 모든 금속원소에 대한 나노화 및 고순도화가 용이할 뿐만 아니라, 제조공정이 단순한 친환경 공법으로 저비용으로 나노입자를 제조할 수 있는 장점을 갖고 있다. 본 연구에서는 이송식 DC 열 플라즈마를 이용한 Cu 나노분말 제조, 비이송식 DC 열 플라즈마를 이용한 Fe 나노분말 합성 연구를 통해 반응기의 압력과 플라즈마 파워, Gas 유량등의 공정 변수가 나노입자 생성 특성에 미치는 영향을 확인 하였다. 또한 DC 열플라즈마 나노입자 합성 시스템에 대한 장비와 기술도 소개한다.

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Characterization of Surface Textured Silicon Substrates by SF6/O2 Gas Mixture (SF6/O2 혼합가스에 의한 실리콘 웨이퍼의 표면 텍스쳐링 특성)

  • Kang, Min-Seok;Joo, Sung-Jae;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.5
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    • pp.345-348
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    • 2012
  • The optical losses associated with the reflectance of incident radiation are among the most important factors limiting the efficiency of a solar cell. Therefore, photovoltaic cells normally require special surface structures or materials, which can reduce reflectance. In this study, nano-scale textured structures with anti-reflection properties were successfully formed on silicon. The surface of sicon wafer was etched by the inductively coupled plasma process using the gaseous mixture of $SF_6+O_2$. We demonstrate that the reflection characteristic has significantly reduced by ~0% compared with the flat surface. As a result, the power efficiency $P_{max}$ of the nano-scale textured silicon solar cell were enhanced up to 20%, which can be ascribed primarily to the improved light trapping in the proposed nano-scale texturing.

Briquetting of Waste Silicon Carbide Obtained from Silicon Wafer Sludges (실리콘 wafer sludge로부터 얻어진 SiC의 단광화 기술)

  • Koo, Seong Mo;Yoon, Su Jong;Kim, Hye Sung
    • Journal of Powder Materials
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    • v.23 no.1
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    • pp.43-48
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    • 2016
  • Waste SiC powders obtained from silicon wafer sludge have very low density and a narrow particle size distribution of $10-20{\mu}m$. A scarce yield of C and Si is expected when SiC powders are incorporated into the Fe melt without briquetting. Here, the briquetting variables of the SiC powders are studied as a function of the sintering temperature, pressure, and type and contents of the binders to improve the yield. It is experimentally confirmed that Si and C from the sintered briquette can be incorporated effectively into the Fe melt when the waste SiC powders milled for 30 min with 20 wt.% Fe binder are sintered at $1100^{\circ}C$ upon compaction using a pressure of 250 MPa. XRF-WDS analysis shows that an yield of about 90% is obtained when the SiC briquette is kept in the Fe melt at $1650^{\circ}C$ for more than 1 h.

Solid Phase Extraction of Celecoxib from Drug Matrix and Biological Fluids by Grafted Poly β-cyclodextrine/allyl Amine Magnetic Nano-particles

  • Kamari, Sahar;Panahi, Homayon Ahmad;Baimani, Nasim;Moniri, Elham
    • Korean Chemical Engineering Research
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    • v.55 no.3
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    • pp.287-295
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    • 2017
  • Using nanotechnology, magnetic nanoparticles of iron oxide were produced via co-precipitation method and followed modification with organic compounds. In the next step, functionalized monomer was provided via coupling ${\beta}$-cyclodextrine and allylamine onto modified magnetic nanoparticles. These nanoparticles were used to establish the adsorption rate of celecoxib. Magnetic nanoparticles are modified by (3-mercaptopropyl)trimethoxysilane. Nano-adsorbent was characterized by analytical and spectroscopic methods, such as Fourier transform infrared spectroscopy, elemental analysis, thermo-gravimetric analysis, and transmission electron microscopy (TEM). Laboratory parameters, such as the kinetics of adsorption isotherms, pH, reaction temperature and capacity were optimized. Finally, by using this nano-adsorbent in the optimized condition, extraction of celecoxib from biological samples as urine, drug matrix and blood plasma was carried out by high performance liquid chromatography with sensitivity and high accuracy.

Characterization of Nafion Coated Non-enzymatic Glucose Sensor in Human Plasma and Whole Blood (나피온을 이용하여 패키징된 무효소 혈당센서의 혈장 및 전혈에서의 특성 평가)

  • Lee, Yi-Jae;Kim, Jung-Doo;Park, Jae-Yeong
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1474-1475
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    • 2008
  • 본 논문에서는 nanoporous Pt (Platinum) 전극을 이용한 무효소 혈당센서의 생체 적합성 및 전류응답 특성 향상을 위해 다양한 패키징 방법이 제안되었다. 생체적합성을 갖는 Nafion 멤브레인을 dipping, spin coating, chemical bonding 방법으로 패키징 한 후, 다양한 글루코오스 농도의 혈장, 전혈에서 특성을 분석, 비교하였다. 단백질 등이 포함되지 않은 환경에서 spin coating 방법으로 패키징한 센서의 전류응답 특성은 가장 좋았지만, 혈장 및 전혈에서는 dipping, chemical bonding 방법으로 패키징한 센서의 전류응답 특성에 미치지 못했다. Nafion film을 센서와 chemical bonding한 센서의 혈장에서 sensitivity 는 0.32 ${\mu}A/mM{\cdot}cm^2$ 이었다. 한편, 전혈에서 bare 센서가 급격한 bio-fouling 현상을 보이는 반면 패키징한 센서는 글루코오스 농도에 따라 일정한 전류변화를 보였다. 이는 Nafion을 이용하여 패키징한 무효소 혈당 센서가 생체환경에 적합할 뿐 아니라 생체이식형 및 연속 측정 가능한 시스템에 적용 가능함을 보여준다.

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Corrosion Behavior and Microstructural Evolution of Magnesium Powder with Milling Time Prepared by Mechanical Milling (기계적 밀링법으로 제조된 마그네슘 분말의 밀링시간에 따른 미세구조 변화와 부식거동)

  • Ahn, Jin Woo;Hwang, Dae Youn;Kim, Gyeung-ho;Kim, Hye-Sung
    • Korean Journal of Metals and Materials
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    • v.49 no.6
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    • pp.454-461
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    • 2011
  • In this study, the relationship between corrosion resistance and microstructural characteristics such as grain size reduction, preferred orientation, and homogenous distribution of elements and impurity by mechanical milling of magnesium powder was investigated. Mechanical milling of pure magnesium powder exhibited a complex path to grain refinement and growth together with preferred orientation reversal with milling time. It was also found that anisotropic formation of dislocation on the basal plane of magnesium was initially the dominant mechanism for grain size reduction. After 60 hrs of milling, grain coarsening was observed and interpreted as a result of the strain relaxation process through recrystallization. In spite of the finer grain size and strong (002) texture developed in the sample prepared by spark plasma sintering at $500^{\circ}C$ for 5 min after mechanical milling for 2hrs, the sample showed a higher corrosion rate. The results from this study will be helpful for better understanding of the controlling factor for corrosion resistance and behaviors of mechanical milled magnesium powders.

Improvement in Light Extraction Efficiency of 380 nm UV-LED Using Nano-patterned n-type Gan Substrate (나노 구조의 패턴을 갖는 n-type GaN 기판을 이용한 380 nm UV-LED의 광 추출 효율 개선)

  • Baek, Kwang-Sun;Jo, Min-Sung;Lee, Young-Gon;Sadasivam, Karthikeyan Giri;Song, Young-Ho;Kim, Seung-Hwan;Kim, Jae-Kwan;Jeon, Seong-Ran;Lee, June-Key
    • Korean Journal of Materials Research
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    • v.21 no.5
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    • pp.273-276
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    • 2011
  • Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-$SiO_2$ nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.

Pyrolysis Synthesis of CdSe/ZnS Nanocrystal Quantum Dots and Their Application to Light-Emitting Diodes (CdSe/ZnS 나노결정 양자점 Pyrolysis 제조와 발광다이오드 소자로의 응용)

  • Kang, Seung-Hee;Kumar, Kiran;Son, Kee-Chul;Huh, Hoon-Hoe;Kim, Kyung-Hyun;Huh, Chul;Kim, Eui-Tae
    • Korean Journal of Materials Research
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    • v.18 no.7
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    • pp.379-383
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    • 2008
  • We report on the light-emitting diode (LED) characteristics of core-shell CdSe/ZnS nanocrystal quantum dots (QDs) embedded in $TiO_2$thin films on a Si substrate. A simple p-n junction could be formed when nanocrystal QDs on a p-type Si substrate were embedded in ${\sim}5\;nm$ thick $TiO_2$ thin film, which is inherently an n-type semiconductor. The $TiO_2$ thin film was deposited over QDs at $200^{\circ}C$ using plasma-enhanced metallorganic chemical vapor deposition. The LED structure of $TiO_2$/QDs/Si showed typical p-n diode currentvoltage and electroluminescence characteristics. The colloidal core-shell CdSe/ZnS QDs were synthesized via pyrolysis in the range of $220-280^{\circ}C$. Pyrolysis conditions were optimized through systematic studies as functions of synthesis temperature, reaction time, and surfactant amount.

Demonstration of Nonpolar a-plane Light Emitting Diodes on r-plane Sapphire Substrate by MOCVD

  • Son, Ji-Su;Baik, Kwang-Hyeon;Song, Hoo-Young;Kim, Ji-Hoon;Kim, Tae-Geun;Hwang, Sung-Min
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.147-147
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    • 2011
  • High crystalline nonpolar a-plane (11-20) nitride light emitting diodes (LEDs) have been fabricated on r-plane (1-102) sapphire substrates by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 4 periods the nonpolar a-plane InGaN/GaN(a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN LED layers with double crystal x-ray diffraction. The FWHM values were decreased down to 477 arc sec for $0^{\circ}$ and 505 arc sec for $-90^{\circ}$, respectively. After fabricating a conventional lateral LED chip which size was $300{\times}600{\mu}m^2$, we measured the optical output power by on-wafer measurements. N-electrode was made with Cr/Au contact, and ITO on p-GaN was formed with Ohmic contact using Ni/Au followed by inductively coupled plasma etching for mesa isolation. The optical output power of 1.08 mW was obtained at drive current of 20 mA with the peak emission wavelength of 502 nm.

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