• Journal of Ocean Engineering and Technology
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• v.20 no.5 s.72
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• pp.77-81
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• 2006

In this study, monolithic liquid phase sintered SiC (LPS-SiC) was made by the hot pressing method with nano-SiC powder, whose particle size is 30 nm and less on the average. Alumina ($Al_{2}O_{3}$), yttria ($Y_{2}O_{3}$), and silica ($S_{i}O_{2}$) were used for sintering additives. To investigate the effects of $S_{i}O_{2}$, the $Al_{2}O_{3}/Y_{2}O_{3}$ composition was fixed and the ratio of $S_{i}O_{2}$ was changed, with seven different ratios tested. And to investigate the effects of the sintering temperature, the sintering temperature was changed, with $1760^{\circ}C,\;1780_{\circ}C$, and $1800_{\circ}C$ being used with a $S_{i}O_{2}$ ratio of 3 wt%. The materials were sintered for 1 hour at $1760^{\circ}C,\;1780^{\circ}C$ and $1800^{\circ}C$ under a pressure of 20 MPa. The effects on sintering from the sintering system used, as well as from the composition of the sintering additives, were investigated by density measurements. Mechanical properties, such as flexural strength, were investigated to ensure the optimum conditions for a matrix of SiCf/SiC composites. Sintered densityand the flexural strength of fabricated LPS-SiC increased with an increase in sintering temperature. Particularly, the relative density of a sintered body at $1800^{\circ}C$ with a non-content of $S_{i}O_{2}$, a specimen of AYSO-1800, was 95%. Also, flexural strength was about 750MPa.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.676-680
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• 2010

In this paper, Fin-type silicon-oxide-nitride-oxide-silicon (SONOS) flash memory are fabricated and the electrical characteristics are analyzed. Compared to the planar-type SONOS devices, Fin-type SONOS devices show good short channel effect (SCE) immunity due to the enhanced gate controllability. In memory characteristics such as program/erase speed, endurance and data retention, Fin-type SONOS flash memory are also superior to those of conventional planar-type. In addition, Fin-type SONOS device shows improved SCE immunity in accordance with the decrease of Fin width. This is known to be due to the fully depleted mode operation as the Fin width decreases. In Fin-type, however, the memory characteristic improvement is not shown in narrower Fin width. This is thought to be caused by the Fin structure where the electric field of Fin top can interference with the Fin side electric field and be lowered.

• Journal of KIISE:Computer Systems and Theory
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• v.34 no.11
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• pp.572-580
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• 2007

Wireless sensor networks are sensing, computing and communication infrastructures that allow us to monitor, instrument, observe, and respond to phenomena in the harsh environment. Generally, the wireless sensor networks are composed of many deployed sensor nodes that were designed to be very cost-efficient in terms of production cost. For example, UC Berkeley's MICA motes have only 8-bit CPU, 4KB RAM, and 128KB FLASH memory space. Therefore, sensor operating systems that run on the sensor nodes should be able to operate efficiently in terms of the resource management. In this paper, we present a dynamic threads stack management scheme for space-constrained and multi-threaded sensor operating systems. In this scheme, the necessary stack space of each function is measured on compile-time. Then, the information is used to dynamically allocate and release each function's stack space on run-time. It was implemented in Nano-Qplus sensor operating system. Our experimental results show that the proposed scheme outperforms the existing fixed-size stack allocation mechanism.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.1
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• pp.176-181
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• 2009

In this work, a new type of DSCs based on nanoporous FTO structure is being developed for research aimed at low-cost high-efficiency solar cell application. The nanoporous FTO materials have been prepared through the sol-gel combustion method followed by thermal treatment at $450{\sim}850[^{\circ}C]$. The properties of the nanoporous FTO materials were investigated by IR spectra, BET and TEM analyses, and the photovoltaic performance of the prepared DSCs were examined. It can be seen from the result that the nanoporous FTO exhibited good transparent conductive properties, well suited for DSCs application.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.12
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• pp.2697-2704
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• 2011

In tissue engineering area, researchers observe symbiotic relationship such as proliferation, interaction, division apoptosis with time between cells in process of the 3D cell culture in hydrogels. The 3D cell culture process can be taken photographs into sliced images using confocal microscope. Symbiotic mechanism and changes of cell behaviors can be observed and analyzed from the images acquired by confocal microscope. In this paper, we proposed and developed graded noise elimination method and cluster boundary extraction method to extract boundaries information from sliced confocal images acquired in process of the 3D cell culture in hydrogels. The experiment based algorithm showed excellent performance for eliminating noises that have very small millet-shaped size. It is also showed to extract exact boundaries information for even complex clusters.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.760-765
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• 2014

MgZnO has attracted a lot of attention for flexible device. In the flexible substrate, the crystal structure of the thin films as well as the surface morphology is not good. Therefore, in this study, we studied on the effects of the oxygen pressure on the structure and crystallinity of $Mg_{0.3}Zn_{0.7}O$ thin films deposited on PES substrate by using pulsed laser deposition. We used X-ray diffraction and atomic force microscopy in order to observe the structural characteristics of $Mg_{0.3}Zn_{0.7}O$ thin films. The crystallinity of $Mg_{0.3}Zn_{0.7}O$ thin films with increasing temperature was improved, Grain size and RMS of the films were increased. UV-visible spectrophotometer was used to get the band gap energy and transmittance. $Mg_{0.3}Zn_{0.7}O$ thin films showed high transmittance over 90% in the visible region. As increased working pressure from 30 mTorr to 200 mTorr, the bandgap energy of $Mg_{0.3}Zn_{0.7}O$ thin film were decreased from 3.59 eV to 3.50 eV.

• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.121-124
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• 2013

The incorporation of 90 nm alumina particles into an epoxy matrix to form a composite microstructure is described in present study. It is shown that the use of ultrafine particles results in a substantial change in the behavior of the composite, which can be traced to the mitigation of internal charges when a comparison is made with conventional $Al_2O_3$ fillers. A variety of diagnostic techniques have been used to augment pulsed electro-acoustic space charge measurement to provide a basis for understanding the underlying physics of the phenomenon. It would appear that, when the size of the inclusions becomes small enough, they act cooperatively with the host structure and cease to exhibit interfacial properties. It is postulated that the $Al_2O_3$ particles are surrounded by high charge concentrations. Since $Al_2O_3$ particles have very high specific areas, these regions allow limited charge percolation through $Al_2O_3$ filled dielectrics. The practical consequences of this have also been explored in terms of the electric strength exhibited. It would appear that there was a window in which real advantages accumulated from the nano-formulated material. An optimum filler loading of about 0.5 wt.% was indicated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.271-274
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• 2013

Power Metal Oxide Semiconductor Field Effect Transistor's (MOSFETs) are well known for superior switching speed, and they require very little gate drive power because of the insulated gate. In these respects, power MOSFETs approach the characteristics of an "ideal switch". The main drawback is on-resistance RDS(on) and its strong positive temperature coefficient. While this process has been driven by market place competition with operating parameters determined by products, manufacturing technology innovations that have not necessarily followed such a consistent path have enabled it. This treatise briefly examines metal oxide semiconductor (MOS) device characteristics and elucidates important future issues which semiconductor technologists face as they attempt to continue the rate of progress to the identified terminus of the technology shrink path in about 2020. We could find at the electrical property as variation p base dose. Ultimately, its ON state voltage drop was enhanced also shrink chip size. To obtain an optimized parameter and design, we have simulated over 500 V Field ring using 8 Field rings. Field ring width was $3{\mu}m$ and P base dose was $1e15cm^2$. Also the numerical multiple $2.52cm^2$ was obtained which indicates the doping limit of the original device. We have simulated diffusion condition was split from $1,150^{\circ}C$ to $1,200^{\circ}C$. And then $1,150^{\circ}C$ diffusion time was best condition for break down voltage.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.322-326
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• 2011

Etch process of silicon dioxide layer by using capacitively coupled plasma (CCP) is currently being used to manufacture semiconductor devices with nano-scale feature size below 50 nm. In typical CCP plasma etcher system, plasmas are generated by applying the RF power on upper electrode and ion bombardment energy is controlled by applying RF power to the bottom electrode with the Si wafer. In this case, however, etch results often drift due to heating of the electrode during etching process. Therefore, controlling the temperature of the upper electrode is required to obtain improvement of etch repeatability. In this work, we report repeatability improvement during the silicon dioxide etching under extreme process conditions with very high RF power and close gap between upper and bottom electrodes. Under this severe etch condition, it is difficult to obtain reproducible oxide etch results due to drifts in etch rate, critical dimension, profile, and selectivity caused by unexpected problems in the upper electrode. It was found that reproducible etch results of silicon dioxide layer could be obtained by controlling temperature of the upper electrode. Methods of controlling the upper electrode and the correlation with etch repeatability will be discussed in detail.

• Journal of Powder Materials
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• v.11 no.6 s.47
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• pp.486-492
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• 2004

We report the crystallization and magnetic properties of non-equilibrium $Al_{0.6}(Fe_{x}Cu_{1-x})_{0.4}(x=0.25, 0.50, 0.75)$ alloy powders produced by rod-milling as well as by new chemical leaching. X-ray diffractometry, transmission electron microscopy, differential scanning calorimetry and vibrating sample magnetometry were used to characterize the as-milled and leached specimens. After 400 h or 500 h milling, only the broad peaks of nano bcc crystalline phases were detected in the XRD patterns. The crystallite size, the peak and the crystallization temperatures increased with increasing Fe. After being annealed at $600{^\circ}C$ for 1 h for as-milled alloy powders, the peaks of bcc $AlCu_{4}\;and\;Al_{13}Cu_{4}Fe_{3}\;for\;x=0.25,\;bcc\;AlCu_{4}\;and\;Al_{5}Fe_{2}\;for\;x=0.50,\;and\;Al_{5}Fe_{2},\;and\;Al_{0.5}Fe_{0.5}\;for\;x=0.75$ are observed. After being annealed at $500{^\circ}\;and\;600{^\circ}C$for 1 h for leached specimens, these non-equi-librium phases transformed into fcc Cu and $CuFe_{2}O_{4}$phases for the x=0.25 specimen, and into bcc ${\alpha}-Fe,\;fcc\;Cu,\;and\;CuFe_{2}O_{4}$ phases for both the x=0.50 and the x=0.75 specimens. The saturation magnetization decreased with increasing milling time for $Al_{0.6}(Fe_{x}Cu_{1-x})_{0.4}$ alloy powders. On cooling the leached specimens from $800{\~}850^{\circ}C$,\;the magnetization first sharply increase at about $491.4{\circ}C,\;745{\circ}C,\;and\;750.0{\circ}C$ for x=0.25, x=0.50, and x=0.75 specimens, repectively.