• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.636-639
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• 2003

It is difficult to machine below 10 micrometers by conventional machining methods, such as micro-EDM. However, ultra micro machining using focused ion beam(FIB) is able to machine to 50 nanometers. In addition, 3 dimensional structures can be made by a combination of FIB and CVD to the level of 10 nanometers. Die ＆ moulds techniques are better than one-to-one machining techniques in the mass production of ultra size structures, in regards to production costs. In this case, the machining precision of die ＆ moulds affects produced parts. Also, it is advantageous to machine die ＆ moulds to the 10 micrometer level by FIB technique rather than other techniques. In this paper, the grooving characteristics for die ＆ mould materials by FIB were carried out experimentally in order to compare the machining characteristics of FIB with conventional machining methods. The results showed that the machining parameters and the scanning path of FIB affects the precision. The machined width and depth of the groove varied depending on the required depth due to the redeposition of the sputtered ion material accumulating on both the bottom and the side of the wall.

• Steel and Composite Structures
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• v.36 no.3
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• pp.293-305
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• 2020

This article presented a nanoscale modified continuum model to investigate the free vibration of functionally graded (FG) porous nanobeam by using finite element method. The main novelty of this manuscript is presenting effects of four different porosity models on vibration behaviors of nonlocal nanobeam structure including size effect, that not be discussed before The proposed porosity models are, uniform porosity distribution, symmetric with mid-plane, bottom surface distribution and top surface distribution. The nano-scale effect is included in modified model by using the differential nonlocal continuum theory of Eringen that adding the length scale into the constitutive equations as a material parameter constant. The graded material is distributed through the beam thickness by a generalized power law function. The beam is simply supported, and it is assumed to be thin. Therefore, the kinematic assumptions of Euler-Bernoulli beam theory are held. The mathematical model is solved numerically using the finite element method. Results demonstrate effects of porosity type, material gradation, and nanoscale parameters on the free vibration of nanobeam. The proposed model is effective in vibration analysis of NEMS structure manufactured by porous functionally graded materials.

• Bulletin of the Korean Chemical Society
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• v.35 no.8
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• pp.2512-2518
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• 2014

The praseodymium-doped $TiO_2$ photocatalyst samples, which could degrade methyl orange under UV irradiation, were prepared by sol-microwave method for improving the photocatalytic activity of $TiO_2$. The resulting materials were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), Transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), Raman spectra, Fourier transform infrared spectra (FTIR) and Ultraviolet-visible diffuse reflectance spectra (UV-vis DRS). It was found Pr doping retarded the growth of crystalline size and the phase transformation from anatase to rutile, and narrowed the band gap energy. Praseodymium doping brought about remarkable improvement in the photoactivity. The optimal dopant amount of Pr was 2% by molar of cement and the calcination temperature was $500^{\circ}C$ for the best photocatalytic activity. The improvement of photocatalytic activity was ascribed to the occurrence of lattice distortion and the effective containment of the recombination of the electron-hole by $Pr^{3+}$.

• Nuclear Engineering and Technology
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• v.45 no.6
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• pp.821-826
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• 2013

In the present study, the effects of various heat treatments on the microstructure and mechanical properties of dual phase ODS steels were investigated to enhance the high strength at elevated temperature. Dual phase ODS steels have been designed by the control of ferrite and austenite formers, i.e., Cr, W and Ni, C in Fe-based alloys. The ODS steels were fabricated by mechanical alloying and a hot isostatic pressing process. Heat treatments, including hot rolling-tempering and normalizing-tempering with air- and furnace-cooling, were carefully carried out. It was revealed that the grain size and oxide distributions of the ODS steels can be changed by heat treatment, which significantly affected the strengths at elevated temperature. Therefore, the high temperature strength of dual phase ODS steel can be enhanced by a proper heat treatment process with a good combination of ferrite grains, nano-oxide particles, and grain boundary sliding.

• Journal of the Korean Society for Heat Treatment
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• v.19 no.4
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• pp.219-224
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• 2006

Silver paste with low sintered temperature has been developed in order to apply electronic parts, such as bus electrode, address electrode in PDP (Plasma Display Panel) with large screen area. In this study, nano-sized silver particles with 10-30 nm were synthesized from silver nitrate ($AgNO_3$) solution by chemical reduction method and silver paste with low sintered temperature was prepared by mixing silver nanoparticles, conventional silver powder with the particle size 1.6 um and Pb-free frit. Conductive thick film from silver paste was fabricated by screen printing on alumina substrate. After firing at $540^{\circ}C$, the cross section and surface morphology of the thick films were analyzed by FE-SEM. Also, the sheet resistivity of the fired thick films was measured using the four-point technique.

• Journal of the Korean Society for Heat Treatment
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• v.23 no.6
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• pp.309-314
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• 2010

Microstructures and grain growth behaviors at elevated temperatures have been investigated for extruded Mg-2%Zn and Mg-2%Zn-0.3%Zr alloys, in order to clarify the role of Zr in grain stability of Mg-Zn alloy. The grain size of Zr-free alloy increased continuously with an increase in annealing temperature, when isochronally annealed for 60 min from 573 to 723K, while the grains of the Zr-containing alloy were relatively stable up to 723 K. The activation energies for grain growth ($E_g$) between 573 and 723 K were calculated as 77.8 and 118.6 kJ/mole for the Mg-2%Zn and Mg-2%Zn-0.3%Zr alloys, respectively, which indicates that grains in the Zr-added alloy possess higher thermal stabilities at elevated temperatures. TEM observations on the annealed Mg-2%Zn and Mg-2%Zn-0.3%Zr alloys revealed that enhanced grain stability resulting from Zr addition into Mg-Zn alloy would be ascribed to the restriction of grain growth by stable Zn-Zr nano-precipitates distributed in the microstructure.

• Journal of Sensor Science and Technology
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• v.20 no.6
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• pp.406-411
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• 2011

$Co_3O_4$ thick film gas sensor using the powder prepared by hydrothermal reaction method(HRM) was fabricated. For comparison study, we also prepared the sensor using commercial $Co_3O_4$ powder under the same fabrication conditions. Sensitivity, time response, and selectivity of them to variable gases such as iso-$C_4H_{10}$, CO, $NH_3$, and $CH_4$ were investigated. The sensor from the powder prepared by HRM showed higher sensitivity to every gas than those from commercial powder. For iso-$C_4H_{10}$ gas, the sensitivities of both sensor to 100 ppm are 160 % and 40 %, respectively. Time response and selectivity of the sensor using the powder prepared by HRM were better than those of the sensor using commercial powder.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.12
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• pp.1121-1126
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• 2014

To compensate location error of ultrasonic horn, the laser scanning system based on the galvanometer scanner is developed. It consists of the 3-Axis linear stage and the 2-Axis galvanometer scanner. To measure surface shape of three-dimensional free form surface, the dynamic focusing unit is adopted, which can maintain consistent focal plane. With combining the linear stage and the galvanometer scanner, the scanning area is enlarged. The scanning CAD system is developed by stage motion teaching and NURBS method. The laser scanning system is tested by marking experiment with the semi-cylindrical sample. Scanning accuracy is investigated by measured laser marked line width with various scanning speed.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.339-343
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• 2005

Pt-$SrBi_2Nb_2O_9(SBN)-Pt-Y_2O_3-Si$ gate field effect transistors (MFMISFETs) have been fabricated and the SBN thin films are rapid thermal annealed in oxygen plasma. The grain size of the SBN becomes 4 times much larger than that of furnace annealed SBN films even at the same annealing temperature of $700^{\circ}C$, remnant polarization value of Pt-SBN-Pt is improved by 2 times. Using the rapid grain growth of SBN for the MFM-ISFET, memory window and programming characteristics of on/off states are fairly well improved.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.41-44
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• 2004

The trend of decreasing the minimal structure sizes in microelectronics is still being continued. Therefore in its roadmap the Semiconductor Industries Association predicts a printed minimum MOS-transistor channel length of 10 nm for the year 2018. Although the resolution of optical lithography still dramatically increases, there are known and proved solutions for structure sizes significantly below 50 nm up to now. In this work a new method for the fabrication of extremely small MOS-transistors with a channel length and width below 50 nm with low demands to the used lithography will be explained. It's a further development of our deposition and etchback technique which was used in earlier research to produce transistors with very small channel lengths down to 30 nm, with a scaling of the transistor's width. The used technique is proved in a first charge of MOS-transistors with a channel area of W=200 nm and L=80 nm. The full CMOS compatible technique is easily transferable to almost any other technology line and results in an excellent homogeneity and reproducibility of the generated structure size. The electrical characteristics of such small transistor will be analyzed and the ultimate limits of the technique will be discussed.