• Korean Chemical Engineering Research
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• v.49 no.3
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• pp.338-341
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• 2011

Thin silicon ribbon was used for fabricating flexible silicon p-i-n junction devices, consisting of 100${\times}$100 arrays of pixels in 1 inch on the diagonal. Those passive matrix devices exhibited the rectification ratio $>10^{4}$ owing to smaller cross-talking current than that of p-n junction devices. P-i-n devices fabricated on silica/silicon substrates are easily detached by treatment with hydrofluoric acid and are subsequently transferred onto both PDMS and flexible PET film.

• Journal of Powder Materials
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• v.24 no.3
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• pp.248-253
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• 2017

In this study, we investigate the effect of the diffusion barrier and substrate temperature on the length of carbon nanotubes. For synthesizing vertically aligned carbon nanotubes, thermal chemical vapor deposition is used and a substrate with a catalytic layer and a buffer layer is prepared using an e-beam evaporator. The length of the carbon nanotubes synthesized on the catalytic layer/diffusion barrier on the silicon substrate is longer than that without a diffusion barrier because the diffusion barrier prevents generation of silicon carbide from the diffusion of carbon atoms into the silicon substrate. The deposition temperature of the catalyst and alumina are varied from room temperature to $150^{\circ}C$, $200^{\circ}C$, and $250^{\circ}C$. On increasing the substrate temperature on depositing the buffer layer on the silicon substrate, shorter carbon nanotubes are obtained owing to the increased bonding force between the buffer layer and silicon substrate. The reason why different lengths of carbon nanotubes are obtained is that the higher bonding force between the buffer layer and the substrate layer prevents uniformity of catalytic islands for synthesizing carbon nanotubes.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.12
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• pp.639-647
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• 2001

We present an integrated optical microswitch, composed of silicon waveguides, gold-coaled silicon micromirrors, and electrostatic contact actuators, for applications to the optical signal transceivers. For a low switching voltage, we modify the conventional curled electrode microactuator into a electrostatic microactuator with touch-down beams. We fabricate the silicon waveguides and the electrostatically actuated micromirrors using the ICP etching process of SOI wafers. We observe the single mode wave propagation through the silicon waveguide with the measured micromirror loss of $4.18\pm0.25dB$. We analyze major source of the micromirror loss, thereby presenting guidelines for low-loss micromirror designs. From the fabricated microswitch, we measure the switching voltage of 31.74V at the resonant frequency of 6.89kHz. Compared to the conventional microactuator, the present contact microactuator achieves 77.4% reduction of the switching voltage. We also discuss a feasible method to reduce the switching voltage to 10V level by using the electrode insulation layers having the residual stress less than 30MPa.

• Carbon letters
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• v.8 no.4
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• pp.335-339
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• 2007

Carbon/silicon composites were synthesized by mixing silicon powders with petroleum pitch and subsequent heat-treatment. The resultant composites were composed of carbon and nano-size crystalline silicon identified by XRD and EDX. FIB images and SEM images were taken respectively to detect the existence of silicon impregnated in carbon and the distribution of silicon on the carbon surface. The obtained carbon/silicon materials were assembled as half cell anodes for lithium ion secondary battery and their electrochemical properties were tested. The pitch/silicon composite (3 : 1 wt. ratio) heat treated at $1000^{\circ}C$ and mixed with 55.5 wt.% of graphite showed relatively good electrochemical properties such as the initial efficiency of 78%, the initial discharge capacity of 605 mAh/g, and the discharge capacity of 500 mAh/g after 20 cycles.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.345-348
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• 2012

The optical losses associated with the reflectance of incident radiation are among the most important factors limiting the efficiency of a solar cell. Therefore, photovoltaic cells normally require special surface structures or materials, which can reduce reflectance. In this study, nano-scale textured structures with anti-reflection properties were successfully formed on silicon. The surface of sicon wafer was etched by the inductively coupled plasma process using the gaseous mixture of $SF_6+O_2$. We demonstrate that the reflection characteristic has significantly reduced by ~0% compared with the flat surface. As a result, the power efficiency $P_{max}$ of the nano-scale textured silicon solar cell were enhanced up to 20%, which can be ascribed primarily to the improved light trapping in the proposed nano-scale texturing.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.523-527
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• 2012

Silicon carbide (SiC) has recently drawn an enormous amount of industrial interest due to its useful mechanical properties, such as its thermal resistance, abrasion resistance and thermal conductivity at high temperatures. In this study, RF thermal plasma (PL-35 Induction Plasma, Tekna CO., Canada) was utilized for the synthesis of high-purity SiC powder from an organic precursor (hexamethyldisilazane, vinyltrimethoxysilane). It was found that the SiC powders obtained by the RF thermal plasma treatment included free carbon and amorphous silica ($SiO_2$). The SiC powders were further purified by a thermal treatment and a HF treatment, resulting in high-purity SiC nano-powder. The particle diameter of the synthesized SiC powder was less than 30 nm. Detailed properties of the microstructure, phase composition, and free carbon content were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), a thermogravimetric (TG) analysis, according to the and Brunauer-Emmett-Teller (BET) specific surface area from N2 isotherms at 77 K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.3-4
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• 2005

The Pseudo-MOSFET measurements technique has been used for the electrical characterization of the nano SOL Silicon islands for the Pseudo-MOS measurements were fabricated by selective etching of surface silicon film with dry or wet etching to examine the effects of the etching process on the device properties. The characteristics of the Pseudo-MOS was not changed greatly in the case of thick SOI film which was 205 nm. However the characteristics of the device was dependent on etching process in the case of less than 100 nm thick SOI film. The sub 100nm SOI was obtained by thinning the silicon film of standard thick SOI. The thickness of SOI film was varied from 88 nm to 44 nm by chemical etching. The etching process effects on the properties of pseudo-MOSFET characteristics, such as mobility, turn-on voltage, and drain current transient. The etching process dependency is greater in the thinner SOI and related to original SOI wafer quality.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.5
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• pp.189-195
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• 2003

Atomic Force Microscope (AFM) has been widely used in micro/nano-scale studies and applications for. the last few decade. In this work, wear characteristics of silicon-based AFM tip was investigated. AFM tip shape was observed using a high resolution SEM and the wear coefficient was approximately calculated based on Archard's wear equation. It was shown that the wear coefficient of silicon and silicon nitride were in the range of ${10}^{-1}$~${10}^{-3}$ and ${10}^{-3}$~${10}^{-4}$, respectively. Also, the effect of relative humidity and sliding distance on adhesion-induced tip wear was discussed. It was found that the tip wear has more severe for harder test materials. Finally, the probable wear mechanism was analyzed from the adhesive and abrasive interaction point of view.

• Journal of the Korean institute of surface engineering
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• v.52 no.6
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• pp.321-325
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• 2019

Triso-type coating layers of silicon carbide and graphite on UO₂ paticulate nuclear fuel were prepared by using fluidized bed type chemical vapor deposition and self-propagating high temperature synthesis methods to make a coated nuclear fuel of a power plant for hydrogen mass-production. The source and carrier gases were the mixture of methyltrichlorosilane and propane, and inert argon. Chemical analysis and microstructure observation showed that the coated layers were inner graphite, middle silicon carbide and outer graphite. The elastic modulus and nano-hardness of the silicon carbide layer were 503 [GPa] and 36 [GPa], respectively.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2395-2397
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• 2005

A low voltage operated piezoelectric RF MEMS in-line switch has been realized by using silicon bulk micromachining technologies for advanced mobile/wireless applications. The developed RF MEMS in-line switches were comprised of four piezoelectric cantilever actuators with an Au contact metal electrode and a suspended Au signal transmission line above the silicon substrate. The measured operation dc bias voltages were ranged from 2.5 to 4 volts by varying the thickness and the length of the piezoelectric cantilever actuators, which are well agreed with the simulation results. The measured isolation and insertion loss of the switch with series configuration were -43dB and -0.21dB (including parasitic effects of the silicon substrate) at a frequency of 2GHz and an actuation voltage of 3 volts.