• Advances in nano research
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• v.17 no.2
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• pp.137-147
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• 2024

Graphene nanoribbons (GNRs) are considered a promising alternative to graphene for future nanoelectronic applications. However, GNRs-based device modeling is still at an early stage. This research models the electronic properties of n-doped rough-edged 13-armchair graphene nanoribbons (13-AGNRs) and quantum transport properties of n-doped rough-edged 13-armchair graphene nanoribbon field-effect transistors (13-AGNRFETs) at different doping concentrations. Step-up and edge doping are used to incorporate doping within the nanostructure. The numerical real-space nearest-neighbour tight-binding (NNTB) method constructs the Hamiltonian operator matrix, which computes electronic properties, including the sub-band structure and bandgap. Quantum transport properties are subsequently computed using the self-consistent solution of the two-dimensional Poisson and Schrödinger equations within the non-equilibrium Green's function method. The finite difference method solves the Poisson equation, while the successive over-relaxation method speeds up the convergence process. Performance metrics of the device are then computed. The results show that highly doped, rough-edged 13-AGNRs exhibit a lower bandgap. Moreover, n-doped rough-edged 13-AGNRFETs with a channel of higher doping concentration have better gate control and are less affected by leakage current because they demonstrate a higher current ratio and lower off-current. Furthermore, highly n-doped rough-edged 13-AGNRFETs have better channel control and are less affected by the short channel effect due to the lower value of subthreshold swing and drain-induced barrier lowering. The inclusion of dopants enhances the on-current by introducing more charge carriers in the highly n-doped, rough-edged channel. This research highlights the importance of optimizing doping concentrations for enhancing GNRFET-based device performance, making them viable for applications in nanoelectronics.

• Journal of IKEEE
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• v.28 no.3
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• pp.337-341
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• 2024

As the production process for silicon-based integrated circuits approaches physical limits, a lot of attention is focused on the new semiconductor materials to overcome these problems. Carbon NanoTubes(CNTs) are attracting a lot of interest as one of the most competitive materials with excellent electrical transport and scaling properties, and CNTFETs using CNTs are gaining popularity as next-generation semiconductor devices. However, since the technology to place CNTs in a certain direction and interval on the wafer is not yet mature enough, it is difficult to construct all necessary circuits with CNTFET only. So, there is increasing interest in a hybrid configuration using MOSFET and CNTFET together. Because SRAM plays a role as a cache in microprocessors and is a critical circuit block influencing microprocessor performance, research to implement existing SRAM in a hybrid form is steadily progressing. Therefore, in this paper, we will explain the design method of hybrid 8T SRAM based on the existing hybrid 6T SRAM and discuss the performance difference between the two circuits.

• Journal of the Korean Electrochemical Society
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• v.8 no.3
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• pp.139-145
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• 2005

[ $SnO_x$ ] films on the flexible substrate of PET film were prepared at ambient temperature under a $(CH_3)_4Sn(TMT: tetra-methyl tin)-H_2-O_2$ atmosphere in order to obtain transparent conductive polymer by using ECR-MOCVD(Electro Cyclotron Resonance Metal Organic Chemical Yfpor Deposition) system. The prepared $SnO_x$ thin films show generally over $90\%$ of optical transmittance at wavelength range of 380-780nm and about $1\times10^{-2\~3}ohm{\cdot}cm$ of electrical resistivity. In the present study, effects of $O_2/TMT\;and\;H_2/TMT$ mole ratio on the properties of $SnO_x$ films are investigated and the other process parameters such as microwave power, magnetic current power, substrate distance and working pressure are fixed. Based on our experimental results, the $SnO_x$ film composition ratio of Sn and O directly influences on the electrical and optical properties of the films prepared. The $SnO_x$ film with low electric resistivity and high transmittance could be obtained by controlling the process parameters such as $O_2/TMT\;and\;H_2/TMT$ mole ratio, which play an important role to change the composition ratio between Sn and O. An increase of $O_2/TMT$ mole ratio brought on the increases 0 content in the $SnO_x$ film. On the other hand, an increase of $H_2/TMT$ mole ratio lead to decreases the oxygen content in the film. The optimized composition ratio of oxygen : tin Is determined as 2.4: 1 at $O_2/TMT$ of 80 and $H_2/TMT$ of 40 mole ratio, respectively.

• Korean Chemical Engineering Research
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• v.54 no.1
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• pp.114-119
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• 2016

In this study, we tried to add the conductivity to natural polymer like bacterial cellulose (BC) coated with the conductive polymer PEDOT:PEG, graphene and silver nano-wire (AgNW). Sulfuric acid of 10 to 20% was previously mixed with PEDOT:PEG and then the solution was electron spin-coated on the BC membrane. And then, additive coating with graphene and AgNW were done to improve conductivity, which was examined by hall effect. As the result, we confirmed a considerable improvement of conductivity compared to BC-coated film without sulfuric acid treatment as $2.487{\times}10^{10}$ vs $8.093{\times}10^{15}$ ($1/cm^3$), showing higher electron density with $3.25{\times}10^5$ times. Also, we identified that changed particle type to the polymer type by sulfuric acid using SEM analysis. For FT-IR analysis, it was confirmed that S-O radical ($1200cm^{-1}$) increased in the sulfuric acid treatment than non-treated sulfuric acid. As the method used very small amount of PEDOT:PEG, its transparency could be kept, and pre-treatment process of sulfuric acid will be able to simplify the production process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.113-114
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• 2009

Silicon carbide is one of the most attractive and promising wide band-gap semiconductor material with excellent physical properties and huge potential for electronic applications. Up to now, the most successful method for growth of large SiC crystals with high quality is the physical vapor transport (PVT) method [1, 2]. Since further reduction of defect densities in larger crystal are needed for the true implementation of SiC devices, many researchers are focusing to improve the quality of SiC single crystal through the process modifications for SiC bulk growth or new material implementations [3, 4]. It is well known that for getting high quality SiC crystal, source materials with high purity must be used in PVT method. Among various source materials in PVT method, a SiC powder is considered to take an important role because it would influence on crystal quality of SiC crystal as well as optimum temperature of single crystal growth, the growth rate and doping characteristics. In reality, the effect of powder on SiC crystal could definitely exhibit the complicated correlation. Therefore, the present research was focused to investigate the quality difference of SiC crystal grown by conventional PVT method with using various SiC powders. As shown in Fig. 1, we used three SiC powders with different particles size. The 6H-SiC crystals were grown by conventional PVT process and the SiC seeds and the high purity SiC source materials are placed on opposite side in a sealed graphite crucible which is surrounded by graphite insulation[5, 6]. The bulk SiC crystal was grown at $2300^{\circ}C$ of the growth temperature and 50mbar of an argon pressure. The axial thermal gradient across the SiC crystal during the growth is estimated in the range of $15\sim20^{\circ}C/cm$. The chemical etch in molten KOH maintained at $450^{\circ}C$ for 10 min was used for defect observation with a polarizing microscope in Nomarski mode. Electrical properties of bulk SiC materials were measured by Hall effect using van der Pauw geometry and a UV/VIS spectrophotometer. Fig. 2 shows optical photographs of SiC crystal ingot grown by PVT method and Table 1 shows electrical properties of SiC crystals. The electrical properties as well as crystal quality of SiC crystals were systematically investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.2
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• pp.75-79
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• 2017

Honeycomb-shaped Ag-grid transparent conductive electrodes (TCEs) were fabricated using two different processes, high density plasma etching and lift-off, and the optical and electrical properties were compared according to the fabrication method. For the fabrication of the Ag-grid TCEs by plasma etching, etch characteristics of the Ag thin film in $10CF_4/5Ar$ inductively coupled plasma (ICP) discharges were studied. The Ag etch rate increased as the power increased at relatively low ICP source power or rf chuck power conditions, and then decreased at higher powers due to either decrease in $Ar^+$ ion energy or $Ar^+$ ion-assisted removal of the reactive F radicals. The Ag-grid TCEs fabricated by the $10CF_4/5Ar$ ICP etching process showed better grid pattern transfer efficiency without any distortion or breakage in the grid pattern and higher optical transmittance values of average 83.3 % (pixel size $30{\mu}m/line$ width $5{\mu}m$) and 71 % (pixel size $26{\mu}m/line$ width $8{\mu}m$) in the visible range of spectrum, respectively. On the other hand, the Ag-grid TCEs fabricated by the lift-off process showed lower sheet resistance values of $2.163{\Omega}/{\square}$ (pixel size $26{\mu}m/line$ width $18{\mu}m$) and $4.932{\Omega}/{\square}$ (pixel size $30{\mu}m/line$ width $5{\mu}m$), respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.8
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• pp.664-669
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• 2012

Nano-structured one-dimensional $Na_2Ti_6O_{13}$ particles were synthesized by a molten salt process. Effects of processing parameters on the microstructure and band gap energy of the $Na_2Ti_6O_{13}$ powder were studied in this paper. For the synthesis of the $Na_2Ti_6O_{13}$ particles, two different raw materials of tubular shaped Na-titanate (Na-TiNT) and spherical shaped $TiO_2$ were utilized. Synthesizing with the raw material of Na-TiNT, around 70nm thick 1D-$Na_2Ti_6O_{13}$ with the bandgap energy of 3.5 eV was obtained at $810^{\circ}C$. Below $810^{\circ}C$ or without the presence of NaCl, 1D-$Na_2Ti_6O_{13}$ was in a relatively short in length and agglomerated state. With the processing temperature increased, the thickness of the 1D-$Na_2Ti_6O_{13}$ was also observed to be increased. On the other hand, when $TiO_2$ was employed as a raw material, the mixed amount of $Na_2CO_3$ played an important role in transforming the morphology and phase of the raw material, affecting the bandgap energy of the synthesized product. Specific surface area of the synthesized 1D-$Na_2Ti_6O_{13}$ was significantly affected by the raw and mixed materials as well as processing temperature. When Na-TiNT was processed at $810^{\circ}C$ with NaCl, the specific surface area of the 1D-$Na_2Ti_6O_{13}$ showed the best value of 30.63 $m^2/g$.

• Resources Recycling
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• v.21 no.5
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• pp.31-37
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• 2012

As a recovery of elemental silicon from the sludge of Si wafer process, a process of mechanical separation-chlorine roasting-electrolysis has been suggested. The silicon sludge consisted of Si, SiC, machine oil, and metallic impurities. The oil and metal impurities was removed by mechanical separation. The Si-SiC mixture was converted to silicon chloride by chlorine roasting at $1000^{\circ}C$ for 1 hr and the silicon chloride was dissolved into an ionic liquid of $[Bmpy]Tf_2N$ as an electrolyte. Cyclic voltammetry results showed an wide voltage window of pure $[Bmpy]Tf_2N$ and a reduction peak of elemental Si from $[Bmpy]Tf_2N$ dissolved $SiCl_4$ on Au electrode, respectively. The silicon deposits could be prepared on the Au electrode by the potentiostatic electrolysis of -1.9 V vs. Pt-QRE. The elemental silicon uniformly electrodeposited was confirmed by various analytical techniques including XRD, FE-SEM with EDS, and XPS. Any impurity was not detected except trace oxygen contaminated during handling for analysis.

• Journal of the Korean Wood Science and Technology
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• v.41 no.4
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• pp.302-309
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• 2013

The highly porous cellulosic aerogels were prepared by freeze-drying method using sodium hydroxide-urea aqueous solution in the process of dissolution, gelation, regeneration and organic solvent substitution. The structural characteristics of porous aerogel were analyzed using scanning electron microscopy and nitrogen adsorption apparatus. As a result, the dissolving pulp was completely dissolved, but filter papers and holocellulose were divided into two layers (dissolved and undissolved parts) in the process of centrifugation. The structure of aerogel from dissolved pulp showed porous pores in the surface and net-shaped network in the inner part. Aerogels from filter paper and holocellulose had the condensed porous network surface and the open-pore nano-fibril network inner structure. Undissolved form of fibers was observed in the aqueous solution of aerogel from holocellulose. The BET value ($S_{BET}$) of aerogel from dissolved pulp was ranged in 260~326 $m^2/g$, and it was decreased with the increase of concentration. Whereas, the $S_{BET}$ value of aerogel from filter paper (198~418 $m^2/g$) was increased with the increase of concentration. The $S_{BET}$ value of aerogel from holocellulose were 137 $m^2/g$ at 2% (w/w) of cellulose, and it was increased to maximum 401 $m^2/g$ at 4% (w/w) of cellulose. Then, it was decreased at 5% (w/w) of cellulose.

• Journal of Korean Society of Environmental Engineers
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• v.30 no.1
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• pp.85-89
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• 2008

The purpose of this study is to understand the removal possibility of microalgae using inorganic coagulants in coagulation and sedimentation process for water treatment. Removal of microalgae was studied according to coagulant type(Alum and PAC), coagulation factors(alkalinity, coagulant dosage, and setting time), and size fraction of microalgae. The contribution of applied coagulants for removal of microalgae was also examined. The removal rate of the microalgae by change of alkalinity was most high in 25 mg/L of alkalinity(Alum) as 87.2% and 30 mg/L of that(PAC) as 90.1%. Optimal coagulant dosage to remove the microalgae was 40 mg/L(removal effi.; 88.1%), and PAC was 50 mg/L(removal effi.; 90.1%). Alum was better than the PAC to remove the microlgae. In the water treatment processes such as rapid slow mixing and sedimentation the removal efficiency of microalgae with coagulants was 2 times higher than that of without. In optimal condition, the removal efficiencies of microalgae were nanoplankton > microplankton > picoplankton. Especially, the removal efficiency of the picoplankton was very low as below 30%.