• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1043-1047
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• 2003

With the advancement of micro-systems and nanotechnology, the need for ultra-precision fabrication techniques has been steadily increasing. In this paper, a novel nano-structure fabrication process that is based on the fundamental understanding of nano-scale tribological interaction is introduced. The process, which is called Mechano-Chemical Scanning Probe Lithography (MC-SPL), has two steps, namely, mechanical scribing for the removal of a resist layer and selective chemical etching on the scribed regions. Organic monolayers are used as a resist material, since it is essential for the resist to be as thin as possible in order to fabricate more precise patterns and surface structures. The results show that high resolution patterns with sub-micrometer scale width can be fabricated on both silicon and various metal surfaces by using this technique.

• Nano
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• v.13 no.10
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• pp.1850120.1-1850120.9
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• 2018

Two-dimensional poly(dimethylsiloxane) (PDMS) films with wavy patterns were studied in order to investigate reversible and irreversible wetting effects. Pre-strained, surface oxidized layers of PDMS were used to form relieved wavy geometries, on which hydrophobic functionalization was carried out in order to produce irreversible wetting effects. Wavy-patterned PDMS films showed time-dependent reversible wetting effects. The degree of surface wettability could be tuned by the choice of wavy groove geometries. And the groove geometries were controlled via $O_2$ plasma treatment and mechanical pre-straining. The pre-strained, buckled PDMS films were applied to the fabrication of hydrophobic polystyrene nano-patterns using colloidal self-assembly, where the colloids were arrayed in two-dimensional way. The wavy polystyrene films were found to be more hydrophobic relative to flat polystyrene films. The grooving methodology used in this study could be applied to enhancing the hydrophobicity of other types of polymeric thin films, eliminating the need for chemical treatment.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1489-1492
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• 2005

Compared to other nano-patterning techniques, Nano imprint Lithography (NIL) has some advantages of high throughput and low process cost. To imprint low temperature and pressure, UV Nano imprint Lithography, which using the monomer based UV curable resin is suggested. Because fabrication of high fidelity pattern on topographical substrate is difficult, bi-layer Nano imprint lithography, which are consist of easily removable under-layer and imprinted pattern, is being used. If residual layer is not remained after imprinting, and under-layer is removed by oxygen RIE etching, we might be able to fabricate the bi-layer pattern for easy lift-off process.

• Transactions of Materials Processing
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• v.20 no.1
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• pp.23-28
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• 2011

For the fabrication of nano patterned products manufacturing a nano patterned mold is needed in advance. The nano patterned stamper was fabricated by electroforming the AAO master with nickel. The surface of nickel-plated stamper had nano-patterned holes with the diameter of 73 nm and the depth of 83 nm. Hot embossing was used for forming P3HT sheet and the process factors of hot embossing were closer as pressure, temperature and time. In the present paper hot embossing experiments were performed to find the main process conditions to affect the replication ratio of nano patterns on surface of P3HT sheet. As a result, main contributing factors for the replication ratio of hot embossed pattern could be sequentially enumerated as pressure, temperature and time.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.196-198
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• 2003

Classical lithography in semiconductor employs stepper technologies. Limits of this technology are clearly seen at structures below 100nm. Nano-imprinting lithography is a new method for generating patterns in submicron range at reasonable cost. In order to manufacture nano-imprinting lithography(NIL) equipment, several NIL manufacturers have been developing key technologies for realization of nano-imprinting process, recently. In this paper, we've been describe state-of-the-art and technology trends for nano-imprinting lithography equipments.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.6
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• pp.30-35
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• 2009

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.6
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• pp.1047-1055
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• 2006

We patterned nano-width lines on a super hard bulk diamond substrate by varying the ion beam current and ion beam sources with a dual beam field ion beam (FIB). In addition, we successfully fabricated two-dimensional nano patterns and three-dimensional nano plate modules. We prepared nano lines on a diamond and a silicon substrate at the beam condition of 30 kV, 10 pA $\sim$ 5 nA with $Ga^+$ ion and $H_2O$ assisted ion sources. We measured each of the line-width, line-depth, etched line profiles, etch rate, and aspect ratio, and then compared them. We confirmed that nano patterning was possible on both a bulk diamond and a silicon substrate. The etch rate of $H_2O$ source can be enhanced about two times than that of Ga source. The width of patterns on a diamond was smaller than that on a silicon substrate at the same ion beam power The sub-100 nm patterns on a diamond were made under the charge neutralization mode to prevent charge accumulation. We successfully made a two-dimensional, 240 nm-width text of the 300-lettered Lord's Prayer on a gem diamond with 30 kV-30 pA FIB. The patterned text image was readable with a scanning electron microscope. Moreover, three dimensional nano-thick plate module fabrication was made successfully with an FIB and a platinum deposition, and electron energy loss spectrum (EELS) analysis was easily performed with the prepared nano plate module.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.143-144
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• 2013

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2009.10a
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• pp.217-220
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• 2009

This paper presents fabrication method of nano-structured PMMA substrates as well as evaluations of their optical transmittance. For anti-reflective surface, surface coating method had been conventionally used. However, it requires high cost, complicated process and post-processing times. In this study, we suggested the fabrication method of anti-reflective surface by the hot embossing process. Using the nano patterned master fabricated by anodic aluminum oxidation process. Anodic aluminum oxide(AAO) is widely used as templates or a molds for various applications such as carbon nano tube (CNT), nano rod and nano dots. Anodic aluminum oxidation process provides highly ordered regular nano-structures on the large area, while conventional pattering methods such as E-beam and FIB can fabricate arbitrary nano-structures on small area. We fabricated a porous alumina hole array with various inter-pore distance and pore diameter. In order to replicate nano-structures using alumina nano hole array patterns, we have carried out hot-embossing process with PMMA substrates. Finally the nano-structured PMMA substrates were fabricated and their optical transmittances were measured in order to evaluate the charateristivs of anti-reflection. Anti-reflective structure can be applied to various displays and automobile components.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.10
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• pp.93-99
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• 2010

A nano-stereolithography is the direct patterning process with a nanoscale resolution using twophoton absorption induced by a femtosecond laser. However, in the majority of the works, the fabrication of 3D microstructures have been done only onto transparent glass due to the use of an oil immersion objective lens for achieving a high resolution. In this work, the coaxial illumination and the auto-focusing system are proposed for the direct patterning of nano-precision patterns on an opaque substrate such as a silicon wafer and a metal substrate. Through this work, 3D polymer structures and metallic patterns are fabricated on a silicon wafer using the developed process.