• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.261-266
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• 2010

In this paper, we report the changes of electrical, structural and optical characteristics in $Ge_2Sb_2Te_5$ thin films according to an increase of Si content. The Si-doped $Ge_2Sb_2Te_5$ thin films were prepared by rf-magnetron co-sputtering method. Isothermal annealing was carried out at $N_2$ atmosphere. The crystallization speed (v) of amorphous thin films was evaluated by detecting the reflection response signals using a nano-pulse scanner (wavelength = 658 nm) with illumination power of 1~17 mW and pulse duration of 10~460 ns. Structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of 300~3000 nm using UV-vis-NIR spectrophotometer. The sheet resistance (RS) of the thin films was measured using 4 point probe. Conclusivlely, the v-value decreased with an increase of Si content, while the RS-values of both crystalline and amorphous phases were increased. In particular, fcc-to-hexagonal transition was suppressed by the added Si atoms.

• Current Optics and Photonics
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• v.1 no.1
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• pp.7-11
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• 2017

In this study, multilayered graphene was easily transferred to the target substrate in one step using thermal release tape. The transmittance of the transferred graphene according to the number of layers was measured using a spectrophotometer. The sheet resistance was measured using a four-point probe system. Graphene formed using this transfer method showed almost the same electrical and optical properties as that formed using the conventional poly (methyl methacrylate) transfer method. This method is suitable for the mass production of graphene because of the short process time and easy large-area transfer. In addition, multilayered graphene can be transferred on various substrates without wetting problem using the one-step dry transfer method. In this work, this easy transfer method was used for dielectric substrates such as glass, paper and polyethylene terephthalate, and a sheet resistance of ~240 ohm/sq was obtained with three-layer graphene. By fabricating organic solar cells, we verified the feasibility of using this method for optoelectronic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.136.1-136.1
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• 2015

In the present study, UHF (320 MHz) in combination with RF (13.56 MHz) plasmas was used for the synthesis of hydrogenated silicon nitride (SiNx:H) films by PECVD process at low temperature. RF/UHF hybrid plasmas were maintained at a fixed pressure of 410 mTorr in the N2/SiH4 and N2/SiH4/NH3 atmospheres. To investigate the radical generation and plasma formation and their control for the growth of the film, plasma diagnostic tools like vacuum ultraviolet absorption spectroscopy (VUVAS), optical emission spectroscopy (OES), and RF compensated Langmuir probe (LP) were utilized. Utilization of RF/UHF hybrid plasmas enables very high plasma densities ~ 1011 cm-3 with low electron temperature. Measurements using VUVAS reveal the UHF source is quite effective in the dissociation of the N2 gas to generate more active atomic N. It results in the enhancement of the Si-N bond concentration in the film. Consequently, the deposition rate has been significantly improved up to 2nm/s for the high rate synthesis of highly transparent (up to 90 %) SiNx:H film. The films properties such as optical transmittance and chemical composition are investigated using different analysis tools.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.134-134
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• 2009

In this work, we report that crystallization speed as well as the electrical and optical properties about the N-doped $Ge_2Sb_2Te_5$ thin films. The 200-nm-thick N-doped $Ge_2Sb_2Te_5$ thin film was deposited on p-type (100) Si and glass substrate by RF reactive sputtering at room temperature. The amorphous-to-crystalline phase transformation of N-doped $Ge_2Sb_2Te_5$ thin films investigated by X-ray diffraction (XRD). Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-VIS-IR spectrophotometer and four-point probe was used to measure the sheet resistance of N-doped $Ge_2Sb_2Te_5$ thin films annealed at different temperature. In addition, the surface morphology and roughness of the films were observed by Atomic Force Microscope (AFM). The crystalline speed of amorphous N-doped $Ge_2Sb_2Te_5$ films were measured by using nano-pulse scanner with 658 nm laser diode (power : 1~17 mW, pulse duration: 10~460 ns). It was found that the crystalline speed of thin films are decreased by adding N and the crystalline temperature is higher. This means that N-dopant in $Ge_2Sb_2Te_5$ thin film plays a role to suppress amorphous-to-crystalline phase transformation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.568-573
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• 2011

AZO (Al doped ZnO) thin films were deposited on the quartz substrates with thickness variation from 25 to 300 nm by using PLD (pulsed laser deposition). XRD (x-ray diffractometer), SPM (scanning probe microscopy), Hall effect measurement and uv-visible spectrophotometer were employed to investigate the structural, morphological, electrical and optical properties of the thin films. XRD results demonstrated that films were preferrentially oriented along the c-axis and crystallinity of film was improved with increase of film thickness. As for the surface morphologies, the mean diameter and root mean square of grains were increased as the film thickness was increased. When the film thickness was 200 nm, the lowest resistivity of $4.25{\times}10^{-4}\;{\Omega}cm$ obtained with carrier concentration of $6.84{\times}10^{20}\;cm^{-3}$ and mobility of $21.4\;cm^2/V{\cdot}S$. All samples showed more than 80% of transmittance in the visible range. Upon these results, it is found that the samples thickness can affect their structural, morphological, optical and electrical properties. This study suggests that the resistivity can be improved by controlling film thickness.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.32-32
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• 2011

Plasma etching is used in microelectronic processing for patterning of micro- and nano-scale devices. Commonly, optical emission spectroscopy (OES) is widely used for real-time endpoint detection for plasma etching. However, if the viewport for optical-emission monitoring becomes blurred by polymer film due to prolonged use of the etching system, optical-emission monitoring becomes impossible. In addition, when the exposed area ratio on the wafer is small, changes in the optical emission are so slight that it is almost impossible to detect the endpoint of etching. For this reason, as a simple method of detecting variations in plasma without contamination of the reaction chamber at low cost, a method of measuring plasma impedance is being examined. The object in this research is to investigate the suitability of using plasma impedance monitoring (PIM) with statistical approach for real-time endpoint detection of $SiO_2$ etching. The endpoint was determined by impedance signal variation from I-V monitor (VI probe). However, the signal variation at the endpoint is too weak to determine endpoint when $SiO_2$ film on Si wafer is etched by fluorocarbon plasma on inductive coupled plasma (ICP) etcher. Therefore, modified principal component analysis (mPCA) is applied to them for increasing sensitivity. For verifying this method, detected endpoint from impedance analysis is compared with optical emission spectroscopy (OES). From impedance data, we tried to analyze physical properties of plasma, and real-time endpoint detection can be achieved.

• Journal of the Optical Society of Korea
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• v.9 no.1
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• pp.16-21
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• 2005

Using a cantilever type nanoprobe having a 100㎚m aperture at the apex of the pyramidal tip of a near-field scanning optical microscope (NSOM), nanopatterning of polymer films are conducted. Two different types of polymer, namely a positive photoresist (DPR-i5500) and an azopolymer (Poly disperse orange-3), spincoated on a silicon wafer are used as the substrate. A He-Cd laser with a wavelength of 442㎚ is employed as the illumination source. The optical near-field produced at the tip of the nanoprobe induces a photochemical reaction on the irradiated region, leading to the fabrication of nanostructures below the diffraction limit of the laser light. By controlling the process parameters properly, nanopatterns as small as 100㎚ are produced on both the photoresist and azopolymer samples. The shape and size variations of the nanopatterns are examined with respect to the key process parameters such as laser beam power, irradiation time or scanning speed of the probe, operation modes of the NSOM (DC and AC modes), etc. The characteristic features during the fabrication of ordered structures such as dot or line arrays using NSOM lithography are investigated. Not only the direct writing of nano array structures on the polymer films but also the fabrication of NSOM-written patterns on the silicon substrate were investigated by introducing a passivation layer over the silicon surface. Possible application of thereby developed NSOM lithography technology to the fabrication of data storage is discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.349-349
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• 2012

산화제를 이용 기상중합법을 통해 합성되는 고전도도 Poly (3,4-Ethylenedioxythiophene)(PEDOT) 박막은 OTFT, RFID tag, 또는 연성 디스플레이 같은 분야에 다양한 응용 가능성을 가지고 있으며 이로 인해 최근에 연구가 활발히 진행되고 있다. PEDOT박막의 전극소재로써 가능성은 박막의 중합 정도와 표면 형상에 크게 좌우된다. 특히, Si-웨이퍼 기판 위에 산화제의 균일한 도포 및 산화제 자체의 높은 산도 ($pH{\leq}2$)에 따른 부반응의 억제는 기상중합법을 이용한 PEDOT박막의 합성에 있어 매우 중요하다. PEDOT의 효율적인 중합과 균일한 성장을 위해 산화제에 DUDO 와 PEG-PPG-PEG를 첨가한 혼합 산화제 용액을 제조 기상중합 방법을 통해 PEDOT박막을 제작하였다. 그 결과 산화제만을 사용하여 제작된 박막에 비해 전도도가 최대 3,660 S/cm로 향상된 PEDOT 박막이 합성되었다. 이러한 결과는 PEG-PPG-PEG가 산화제 용액의 균일 도포를 향상시키고 Base Inhibitor로 작용하는 DUDO는 PEDOT 성장 시 중합속도를 조절하고 부반응을 최소화 하여 효율적인 공액 이중 결합의 생성을 촉진한데 주로 기인한다. 따라서 그로인해 조밀하며 마이크로 스케일의 기공이 최소화된 PEDOT박막의 합성이 가능하였다. PEDOT박막의 특성 평가에는 4-point probe, optical microscopy, Field Emission-Scanning Electron Microscope, 등이 사용되었으며 또한 전도도의 향상 원인을 분석하고자 ATR-IR Spectrophotometer를 이용하여 합성된 박막의 작용기를 분석하였다. 이러한 고전도도의 PEDOT 박막이 OTFT의 전극소재로 사용된다면 OTFT소자의 성능 향상에 크게 기여 할 것으로 기대된다.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.322-325
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• 2006

The nano/microstructure and mechanical properties of the eutectic regions in thixo and rheo cast A356 alloy parts were investigated using nano/micro-indentation and mechanical scratching, combined with optical microscopy and atomic force microscope (AFM).Most eutectic Si crystals in the A356 alloy showed a modified morphology as fine-fibers, however Si particles of network in eutectic region was formed quickly with aging time increase in thixo-cast. The aging responses of the eutectic regions in both the thixo and rheo cast A356 alloys aged at $150^{\circ}C$ for different times (0, 2, 4, 8, 10, 16, 24, 36, and 72 h) were investigated. Both Vickers hardness ($H_V$) and indentation ($H_{IT}$) test results showed almost the same trend of aging curves, the peak was obtained at the same aging time of 10 h.

• Korean Journal of Materials Research
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• v.28 no.11
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• pp.615-619
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• 2018

To produce carbon electrodes for use in perovskite solar cells, electrode samples are prepared by mixing various weight ratios of 35 nm nano carbon(NC) and $1{\mu}m$ graphite flakes(GF), GF/(NC+GF) = 0, 0.5, 0.7, and 1, in chlorobenzene(CB) solvent with a $ZrO_2$ binder. The carbon electrodes are fabricated as glass/FTO/carbon electrode devices for microstructure characterization using transmission electron microscopy, optical microscopy, and a field emission scanning electron microscopy. The electrical characterization is performed with a four-point probe and a multi tester. The microstructure characterization shows that an electrode with excellent attachment to the substrate and no surface cracks at weight ratios above 0.5. The electrical characterization results show that the sheet resistance is <$70{\Omega}/sq$ and the interface resistance is <$70{\Omega}$ at weight ratios of 0.5 and 0.7. Therefore, a carbon paste electrode with microstructure and electrical properties similar to those of commercial carbon electrodes is proposed with an appropriate mixing ratio of NC and GF containing a CB solvent and $ZrO_2$.