• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.3
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• pp.94-100
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• 2008

It is necessary to develop the flash memory system software FTL(Flash Translation Layer) which is used in mobile storage like Compact Flash memory. In this paper, we design the FTL using clustered hash table and two phase software caching method to translate logical address into physical address fastly. The experimental results show that the address translation performance of CFTL is 13.3% higher than that of NFTL and 8% higher than that of AFTL, and the memory usage of CFTL is 75% smaller than that of AFTL.

• Journal of KIISE:Computer Systems and Theory
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• v.37 no.5
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• pp.272-284
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• 2010

Flash Memory differs from the hard disk, because it cannot be overwritten. Most of the flash memory file systems use not-in-place update mechanisms for the update. Flash memory file systems execute sometimes block cleaning process in order to make writable space while performing not-in-place update process. Block cleaning process collects the invalid pages and convert them into the free pages. Block cleaning process is a factor that affects directly on the performance of the flash memory. Thus this paper suggests the efficient page allocation method, which reduces block cleaning cost by minimizing the numbers of block that has valid and invalid pages at a time. The result of the simulation shows an increase in efficiency by reducing more block cleaning costs than the original YAFFS.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.1-7
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• 2000

The SNOSFET memory devices with ultrathin ONO(tunnel oxide-nitride-blocking oxide) gate dielectric were fabricated using n-well CMOS process and investigated its characteristics. The thicknesses of tunnel oxide, nitride and blocking oxide were $23{\AA},\; 53{\AA}\; and\; 33{\AA}$, respectively. Auger analysis shows that the ONO layer is made up of $SiO_2(upper layer of blocking oxide)/O-rich\; SiO_x\N\_y$. It clearly shows that the converting layer with $SiO_x\N\_y(lower layer of blocking oxide)/N-rich SiO_x\N\_y(nitride)/O-rich SiO_x\N\_y(tunnel oxide)$. It clearly shows that the converting layer with $SiO_x\N\_y$ phase exists near the interface between the blocking oxide and nitride. The programming condition of +8 V, 20 ms, -8 V, 50 ms is determined and data retention over 10 years is obtained. Under the condition of 8 V programming, it was confirmed that the modified Fowler-Nordheim tunneling id dominant charge transport mechanism. The programmed threshold voltage is distributed less than 0.1 V so that the reading error of memory stated can be minimized. An $8\times8$ NAND type flash EEPROM with SONOSFET memory cell was designed and simulated with the extracted SPICE parameters. The sufficient read cell current was obtained and the upper limit of $V_{TH}$ for write state was over 2V.

• Spatial Information Research
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• v.20 no.5
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• pp.67-76
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• 2012

Recently the mobile DBMS (Database Management System) is popular to store and manage large data in a mobile device. Especially, the research and development about mobile storage structure and querying method for navigation map data in a mobile device have been performed. The performance of the mobile DBMS in which random data accesses are most queries if the NAND flash memory is used as storage media of the DBMS is degraded. The reason is that the performance of flash memory is good in writing sequentially but bad in writing randomly as the features of the NAND flash memory. So, new storage structure and querying policies of the mobile DBMS are needed in the mobile DBMS in which a flash memory is used as storage media. In this paper, we have studied the policy of the database page management to enhance the performance of the frequent random update and applied this policy to the navigation-specialized mobile DBMS which supports incremental map update. And also we have evaluated the performance of this policy by experiments.

• IEMEK Journal of Embedded Systems and Applications
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• v.6 no.6
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• pp.383-391
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• 2011

As we know the effects of cache memory research, instruction and data caches can be separated for higher performance with Harvard CPUs. In this paper, we shows the efficiency of buffer system in the instruction and data flash storage medium. And we analyzed characteristics of the data and instruction flash and evaluated the performance. Finally, we propose the best buffer structure with an optimal block size and buffer size for the instruction and data flash.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.17 no.4
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• pp.143-148
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• 2017

Flash Memory which is light and strong external shock as storage of small electronics like smartphone, digital camera, car black box has been widely used. Since the operation speed of the read operation and the write operation are different from each other, and the flash memory has the feature that it is not possible to overwrite, the delete operation is added to solve these problems. Wear-leveling must also be considered, since the number of erase times of the flash memory is limited. Many studies have been conducted on the substitutional algorithms of flash memory based on these characteristics of recent flash memories. So, to solve the problem that has existing buffer replacement algorithm this thesis divide page into 6 groups and when proposed algorithm select victim page, it consider reference page frequency and page recency.

• Proceedings of the Korean Society of Computer Information Conference
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• 2016.01a
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• pp.1-3
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• 2016

낸드 플래시 메모리는 저 전력, 빠른 동작 속도, 높은 신뢰성, 가벼운 무게와 같은 특성을 가지는 비휘발성 메모리로써 폭넓은 분야에서 사용이 증가하고 있다. 그러나 낸드 플래시 메모리는 기존의 보조 기억 장치와 달리 쓰기 전 소거와 낮은 수명에 대한 문제가 존재한다. 기존의 많은 연구에서는 가비지 컬렉션을 통해 수명을 연장하기 위해 노력하였다. 본 논문에서는 낸드 플래시 메모리에 삭제 구간 정보를 활용한 가비지 컬렉션 기법을 제안한다. 제안하는 기법은 "N 삭제 구간 정보"를 이용하여 효과적인 희생블록을 선정하는 특징이 있다. 제안하는 기법은 GA 기법과 비교하여 평균 페이지 이주비용은 최대 50.1% 감소하였으며, 블록 당 소거 횟수의 표준 편차는 최대 233% 감소하였다. 또한, 낸드 플래시 메모리 시스템의 첫 번째 배드 블록 발생 시간은 최대 22.7% 연장하였고, 시스템 수명은 최대 16.7% 연장하였다.

• 전기의세계
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• v.60 no.1
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• pp.46-50
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• 2011

• The Magazine of the IEIE
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• v.37 no.3
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• pp.21-30
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• 2010

• Proceedings of the Korean Information Science Society Conference
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• 2007.06a
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• pp.273-274
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• 2007