• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.131-139
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• 1989

This paper proposes Domino CMOS NOR-NOR Array Logic design method which has the same as characteristic of CMOS and Domino CMOS in Array Logic like PLA, good operation feature, high desity, easy test generation. This testable design method can detect all of faults in the circuit using simple additional circuit and solve the parasitic capacitance problem by improving the pull-down characteristics. A Test generation algorithm and test procedure using concept of PLA product term and personality matrix are proposed, and it was implemented in PASCAL language. This design method is verified by SPICE and P-SPICE simulation.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.574-578
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• 1988

This paper proposes testable design method of Domino CMOS NOR-NOR Array Logic design method. Previous Domino CMOS PLA method is composed of 2 level NAND-NAND Logic. Because NOR-NOR Logic is realized by a parallel circuit, this method can prevent delay time each level and DNOR-PLA include testable circuit system that DNOR-PLA circuit. DNOR-PLA testable algorithm is realized on Prime (Primos) in Pascal language and DNOR-PLA circuit is simulated by PSPICE.

• Transactions on Electrical and Electronic Materials
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• v.7 no.4
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• pp.180-183
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• 2006

We report for the first time two-bit operational characteristics of a high-density NOR-type polysilicon-oxide-nitride-oxide-silicon (SONOS) array with common source line (CSL). An undesired disturbance, especially drain disturbance, in the NOR array with CSL comes from the two-bit-per-cell operation. To solve this problem, we propose an efficient bulk-biased programming technique. In this technique, a bulk bias is additionally applied to the substrate of memory cell for decreasing the electric field between nitride layer and drain region. The proposed programming technique shows free of drain disturbance characteristics. As a result, we have accomplished reliable two-bit SONOS array by employing the proposed programming technique.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.2
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• pp.1-6
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• 2010

We proposed a highly integrated 3-dimensional NOR Flash memory array by using vertical 4-bit SONOS NOR flash memory. This structure has a vertical channel, so it is possible to have a long enough channel without extra cell area. Therefore, we can avoid second-bit effect, short channel effect, and redistribution of injected charges. And the proposed array structure is based on three-dimensional integration. Thus, we can obtain a NOR flash memory having $1.5F^2$/bit cell size.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.193-198
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• 2005

NOR type flash 32 ${\times}$ 32 way are fabricated by using the typical 0.35 ${\mu}{\textrm}{m}$ CMOS process. The structure of array is the NOR type with common source line. In this paper, optimized program and erase voltage conditions are presented to realize multi-bit per cell at the CSL-NOR array. These are considered selectivity of selected bit and disturbances of unselected bits. Retention characteristics of locally trapped-charges in the nitride layer are investigated. The lateral diffusion and vertical detrapping to the tunneling oxide of locally trapped charges as a function of retention time are investigated by using the charge pumping method. The results are directly shown by change of the trapped-charges quantities.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.26-27
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• 2006

To develop tera-bit level SONOS flash memories, SONOS unit memory and 64 bit flash arrays are fabricated. The unit cells have both channel length and width of 30nm. The NAND & NOR arrays are fabricated on SOI wafer and patterned by E-beam. The unit cells represent good write/erase characteristics and reliability characteristics. SSL-NOR array have normal write/erase operation. These researches are leading the realization of Tera-bit level non-volatile nano flash memory.

• Transactions on Electrical and Electronic Materials
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• v.17 no.1
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• pp.25-28
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• 2016

We investigate the effect of interface states on the endurance of a charge trap flash (CTF) NOR array using charge pumping methods. The endurance test was completed from one cell selected randomly from 128 bit cells, where the memory window value after 10² program/erase (P/E) cycles decreased slightly from 2.2 V to 1.7 V. However, the memory window closure abruptly accelerated after 10³ P/E cycles or more (i.e. 0.97 V or 0.7 V) due to a degraded programming speed. On the other hand, the interface trap density (Nit) gradually increased from 3.13×10¹¹ cm⁻² for the initial state to 4×10¹² cm⁻² for 10² P/E cycles. Over 10³ P/E cycles, the Nit increased dramatically from 5.51×10¹² cm⁻² for 10³ P/E cycles to 5.79×10¹² cm⁻² for 10⁴ P/E cycles due to tunnel oxide damages. These results show good correlation between the interface traps and endurance degradation of CTF devices in actual flash cell arrays.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.4
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• pp.13-16
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• 1984

This paper proposes a new layout algorithm in order to minimize chip area in one dimensional MOS - LSI composed of basic cells, such as NAND or NOR gates. The virtval gates are constructed, which represent I/O of signal lines at the left-most and at the right-most side of the MCS gate array. With this, a heuristic algorithm is realized that can minimize the number of straight connectors passing through each gate, and as the result, minimize the horizontal tracks necessary to route. The usefulness of the algorithm proposed is shown by the execution of the experimental program on practical logic circuits.

• Proceedings of the KSR Conference
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• 1998.05a
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• pp.408-418
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• 1998

This paper presents the implementation of comparator which is self-testing with respect to the faults caused by any single physical defect likely to occur in NMOS and CMOS integrated circuit. The goal is to use it for the fault-tolerant system. First, a new fault model for PLA(Programmable Logic Array) is presented. This model reflects several physical defects in VLSI circuits. It focuses on the designs based on PLA because VLSI chips are far too complex to allow detailed analysis of all the possible physical defects that can occur and of the effects on the operation of the circuit. Second, this paper shows that these design, which has been implemented with 2 level AND-ORor NOR-NOR circuit, are optimal in term of size. And it also presents a formal proof that a comparator implemented using NOR-NOR PLA, based on these design, is sol f-testing with respect to most single faults in the presented fault model. Finally, it discusses the application of the self-testing comparator as a building block for the implementation of the fault-tolerant system.

• Broadcasting and Media Magazine
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• v.6 no.2
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• pp.84-101
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• 2001

In this paper, we present a primitive system design of a super multi-view(SMV) 3-D display system based on a focused light array(FLA) concept using reflective vibrating scanner array(ViSA). The parallel beam scanning using a vibrating scanner array is performed by moving left and right an array of curvature-compensated mirrors or diamond-ruled reflective grating attached to a vibrating membrane. The parallel laser beam scanner array can replace the polygon mirror scanner which has been used in the SMV 3-D display system based on the focused light array(FLA) concept proposed by Kajiki at TAO(Telecommunications) Advancement Organization). The proposed system has great advantages in the sense that it requires neither huge imaging optics nor mechanical scanning pals. Some mathematical analyses and fundamental limitations of the proposed system are presented. The proposed vibrating scanner array, after some modifications and refinements, may replace polygon mirror-based scanners in the near future.