• 제목/요약/키워드: NIL (nanoimprint lithography)

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Elememtwise Patterned stamp와 부가압력을 이용한 UV 나노임프린트 리소그래피 공정

  • 손현기;정준호;심영석;이응숙
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2004년도 춘계학술대회 논문요약집
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    • pp.126-126
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    • 2004
  • 1996년 Chou 등이 개발한 가열방식의 나노임프린트 리소그래피(nanoimprint lithography, NIL)은 선폭 100nm 이하의 나노구조물을 경제적으로 제작할 수 있는 대표적인 나노패턴닝(nano-patterning) 공정으로 많은 기대가 모아지고 있으나, 열변형에 의해 다층정렬이 어렵다는 점과, 점도가 큰 레지스트(resist)를 임프린트하기 위해서는 고압(∼30 bar)이 필요하다 점 등의 문제점이 있다. 이를 해결할 수 있는 방법으로 UV 나노임프린트 리소그래피(ultraviolet nanoimprint lithography, UV-NIL)를 들 수 있다.(중략)

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다층 나노임프린트 리소그래피 시스템 및 나노측정기술 (Technology for the Multi-layer Nanoimprint Lithography Equipments and Nanoscale Measurement)

  • 이재종;최기봉;김기홍;임형준
    • 진공이야기
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    • 제2권1호
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    • pp.10-16
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    • 2015
  • With the recognition of nanotechnology as one of the future strategic technologies, the R&D efforts have been performed under exclusive supports of governments and private sectors. At present, nanotechnology is at the focus of research and public attention in almost every advanced country including USA, Japan, and many others in EU. Keeping tracks of such technical trends, center for nanoscale mechatronics and manufacturing (CNMM) was established in 2002 as a part of national nanotechnology promotion policy led by ministry of science and technology (MOST) in Korea. It will hold widespread potential applications in electronics, optical electronics, biotechnology, micro systems, etc, with the promises of commercial visibility and competitiveness. In this paper, wafer scale multilayer nanoimprint lithography technology which is well-known the next generation lithography, roll-typed nanoimprint lithography (R-NIL), roll-typed liquid transfer imprint lithography (R-LTIL), the key technology for nanomanufacturing and nanoscale measurement technology will be introduced. Additionally, its applications and some achievements such as solar cell, biosensor, hard disk drive, and MOSFET, etc by means of the developed multilayer nanoimprint lithography system are introduced.

미세 임프린팅용 금속몰드의 급속가열을 위한 유도가열기구 개발 (Development of Induction Heating Apparatus for Rapid Heating of Metallic Mold)

  • 홍석관;이성희;허영무;강정진
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2007년도 춘계학술대회 논문집
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    • pp.199-204
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    • 2007
  • Hot embossing, one of Nanoimprint Lithography(NIL) techniques, has been getting attention as an alternative candidate of next generation patterning technologies by the advantages of simplicity and low cost compared to conventional photolithographies. A typical hot embossing usually, however, takes more than ten minutes for one cycle of the process because of a long thermal cycling. Over the last few years a number of studies have been made to reduce the cycle time for hot embossing or similar patterning processes. The target of this research is to develop an induction heating apparatus for heating a metallic micro patterning mold at very high speed with the large-area uniformity of temperature distribution. It was found that a 0.5 mm-thick nickel mold can be heated from $25^{\circ}C$ to $150^{\circ}C$ within 1.5 seconds with the temperature variation of ${\pm}5^{\circ}C$ in 4-inch diameter area, using the induction heating apparatus.

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나노 임프린트 리소그라피에 의한 마스터 복제 공정 (Fabrication of Master Replication by Nanoimprint Lithography)

  • 정명영
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2003년도 춘계학술대회
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    • pp.1078-1082
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    • 2003
  • A feasibility study for the fabrication of master replication with nanostructures by Nanoimprint Lithography (NIL) was investigated for application of polymer Photonic Bandgap (PBG) devices used in photonic IC. Large area gratings of $9{\times}15(mm^2)$ with p = 400 nm was successfully embossed on PMMA on silicon wafer and the embossing parameters (temperature, pressure, time) were established. A precise control of $O_2$ plasma Reactive Ion Etching (RIE) process time allowed window opening over the whole area despite the presence of wafer bending. Master replication with aspect ratio 1 was successfully fabricated, but master replication with aspect ratio 3 needs to optimize parameters. All replications were done in a NIL process.

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Flow Behavior at the Embossing Stage of Nanoimprint Lithography

  • Jeong, Jun-Ho;Park, Youn-Suk;Shin, Young-Jae;Lee, Jae-Jong;Park, Kyoung-Taik
    • Fibers and Polymers
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    • 제3권3호
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    • pp.113-119
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    • 2002
  • Nanoimprint lithography (NIL) is a nanofabrication method known to be a low cost method of fabricating nanoscale patterns as small as 6 m. This study is focused on understanding physical phenomena in the embossing of nano/micro scale structures with 100 nm minimum feature size. We present the effects of capillary force and width of stamp groove on flow behavior at the embossing stage through numerical experimentation. We also compare our numerical results with previous experimental results and discuss our results.

EPS(elementwise patterned stamp)활용 UV나노임프린트 공정에서의 웨이퍼 미소변형의 영향 (The effect of wafer deformation on UV-nanoimprint lithography using an EPS(elementwise patterned stamp))

  • 심영석;정준호;손현기;이응숙;방영매;이상찬
    • 한국진공학회지
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    • 제14권1호
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    • pp.35-39
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    • 2005
  • 본 실험에서는 단위요소 사이에 채널을 갖는 Elementwise Patterned Stamp (이하 EPS)를 이용하여 싱글스탭 (single step)으로 4인치 웨이퍼를 임프린트 하는 공정을 수행하였다. 단위요소간의 간격이 3m인 EPS를 이용한 임프린트에서 50 - 100nm급의 패턴을 성공적으로 형성하였다. 그러나 임프린트 과정 중 EPS의 채널 부분에서 웨이퍼의 미소변형이 발생하여 단위요소의 미충전과 불균일한 잔여층이 형성되는 문제들이 발생하였다. 본 논문에서는 이러한 웨이퍼의 미소변형이 단위요소 충전과 패턴형성에 미치는 영향을 확인해 보기 위해 웨이퍼의 두께를 100 - 500㎛로 변화시켜가며 임프린트 실험을 수행하였고, 유한요소법(Finite Element Method, FEM)을 이용한 수치모사를 통하여 실험결과를 확인하였다. 또한 웨이퍼의 미소변형이 발생하는 또 다른 요인인 EPS의 채널 폭을 3mm, 2mm, 1mm로 변화시키며 수행한 수치모사를 통하여 안정된 임프린트 조건을 제시하였다.

나노임프린트 리소그래피 기술을 이용한 그래핀 나노리본 트랜지스터 제조 및 그래핀 전극을 활용한 실리콘 트랜지스터 응용 (Facile Fabrication Process for Graphene Nanoribbon Using Nano-Imprint Lithography(NIL) and Application of Graphene Pattern on Flexible Substrate by Transfer Printing of Silicon Membrane)

  • 엄성운;강석희;홍석원
    • 한국재료학회지
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    • 제26권11호
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    • pp.635-643
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    • 2016
  • Graphene has shown exceptional properties for high performance devices due to its high carrier mobility. Of particular interest is the potential use of graphene nanoribbons as field-effect transistors. Herein, we introduce a facile approach to the fabrication of graphene nanoribbon (GNR) arrays with ~200 nm width using nanoimprint lithography (NIL), which is a simple and robust method for patterning with high fidelity over a large area. To realize a 2D material-based device, we integrated the graphene nanoribbon arrays in field effect transistors (GNR-FETs) using conventional lithography and metallization on highly-doped $Si/SiO_2$ substrate. Consequently, we observed an enhancement of the performance of the GNR-transistors compared to that of the micro-ribbon graphene transistors. Besides this, using a transfer printing process on a flexible polymeric substrate, we demonstrated graphene-silicon junction structures that use CVD grown graphene as flexible electrodes for Si based transistors.