• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.4
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• pp.370-377
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• 1994

DC plasma torch which is a non-transferred type was constructed and silicon nitride powders were produced. Ar gas is used as a plasma gas and gas reactants with the carrier gas are introduced beneath the plasma ignition part. Two slits are attached and a reactive quenching gas is introduced through them. Using $SiCl_4 and NH_3$ as starting materials, silicon nitride powders were produced. As-produced powders were amorphous and crystalline silicon nitrides were obtained by heating at $1420^{\circ}C$ for two hours under nitrogen atmosphere. Silicon nitride phase was identified in the XRD patterns and IR spectrum, and the image of the powders before and after heating was observed from the TEM analysis.

• Journal of Adhesion and Interface
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• v.4 no.2
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• pp.10-20
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• 2003

This paper is relative to the electroless deposition of nickel or copper films on polyimide and polytetrafluoroethylene substrates. First, it is presented an original approach of the electroless process which consists in grafting nitrogenated functionalities on the polymer surfaces via plasma or VUV-assisted treatments operating in a nitrogen-based atmosphere ($NH_3$, $N_2$), and then in catalysing the grafted surfaces in an aqueous tin-free, Pd(+2)-based solution. Adhesion of the Pd(+2) catalytic species on polymer surfaces is explained by the formation of strong covalent bonds between these species and the grafted nitrogenated groups. Second, it is show how a fragmentation test performed in conjunction with electrical measurements can be used to characterize the practical adhesion of the electroless coatings deposited on flexible polymer substrates, and to evidence the influence of some experimental parameters (plasma treatment time and nature of the gas phase).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.200-200
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• 2013

기존 메모리 반도체에 비교해 빠른 재생속도와 높은 집적도, 비휘발성 등의 특성을 가지는 MRAM (Magnetic Random Access Memory)은 DRAM, flash memory 등을 대체할 수 있는 차세대 기억 소자로서 CoFeB/MgO/CoFeB로 구성된 한 개의 MTJ (Magnetic Tunnel Junction)를 단위 메모리로 사용한다. 이 MTJ 물질들은 고밀도 플라즈마를 이용한 건식 식각공정시 Cl2, BCl3 등과 같은 chlorine 을 포함한 가스를 이용하여 왔으나 식각 후 sidewall에서 발생하는 부식과 식각 선택비 확보의 어려움 등으로 마스크 물질에 제약을 받고 소자 특성이 감소하게 되는 등의 문제가 있다. 따라서 이러한 식각 문제점을 해결하기 위한 대안으로 noncorrosive 가스인 CO/NH3, CH3OH, CH4 등을 이용한 MTJ 식각 연구가 진행되어 오고 있으며 이중 CO/NH3 혼합가스는 부식성이 없고 hard mask와의 높은 선택비를 가지는 기체로 CO gas에 NH3 gas를 첨가하게 되면 etch rate이 증가하는 특성을 보인다. 또한 rf pulse-biased power를 이용하여 이온의 입사를 시간에 따라 제어함으로써 pulse off time 때 etch gas와 MTJ 물질간의 chemical reaction을 향상시킬 수 있다. 따라서 본 연구에서는 CO/NH3 혼합가스를 이용하여 다양한 rf pulse-biased power 조건에서 MTJ 물질인 CoFeB, MgO와 hard mask 물질인 W을 식각 한 뒤 식각특성을 분석하였으며 MTJ surface의 chemical binding state, surface roughness 측정을 진행하였다. 식각 샘플의 측정은 Alpha step profiler, XPS (X-ray Photoelectron Spectroscopy), AFM (Atomic Force Microscopy)를 통해 진행되었다. Time-averaged pulse bias에서는 duty ratio가 감소할수록 etch rate의 큰 감소 없이 CoFeB/W, MgO/W 물질의 etch selectivity가 향상됨을 확인할 수 있었으며 pulse off time 구간에서의 chemical reaction 향상으로 인해 식각부산물의 재증착이 감소하고 CoFeB의 surface roughness가 감소하는 것을 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1021-1023
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• 2003

We studied field-emission characteristics of CNTs under various pre-treatment with $NH_{3}$ plasma on the substrate. The turn-on electric field is the lowest value and field enhancement factor (${\beta}$) is he highest value in CNTs pre-treated by $NH_3$ plasma (80 W and 5 min). The field-emission property of CNTs grown on the Ta substrate is slightly better than on the W substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.247-250
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• 2001

We studied optical properties of SiON thin-film in the applications of optical waveguide. SiON thin-film was grown in $300^{\circ}C$ by PECVD(plasma enhanced chemical vapor deposition) system. The change of SiON thin-film composition and refractive Index was studied as a function of varying $NH_3$ gas flow rate. As $NH_3$ gas flow rate was increased, Quantity of N and refractive index were increased at the same time. By the results, we could form the SiON thin-film to use of a waveguide with refractive index of 1.6. We analyzed the conditions of the thin-film with FTIR(fourier transform infrared) and OES (optical emission spectroscopy). N-H bonding($3390cm^{-1}$ ) can be removed by thermal annealing. And we could observe the SiH bonding state and quantity by OES analysis in $SiH_4$

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.247-250
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• 2001

We studied optical properties of SiON thin-film in the applications of optical waveguide. SiON thin-film was grown in 300$^{\circ}C$ by PECVD(plasma enhanced chemical vapor deposition) system. The change of SiON thin-film composition and refractive Index was studied as a function of varying NH$_3$ gas flow rate. As NH$_3$ gas flow rate was increased, Quantity of N and refractive index were increased at the same time. By the results, we could form the SiON thin-film to use of a waveguide with refractive index of 1.6. We analyzed the conditions of the thin-film with FTIR(fourier transform infrared) and OES(optical emission spectroscopy). N-H bonding(3390cm$\^$-1/) can be removed by thermal annealing. And we could observe the SiH bonding state and quantity by OES analysis in SiH$_4$

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.11
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• pp.2095-2099
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• 2007

In this paper, the optimum amorphous silicon nitride thin film is deposited using plasma enhanced chemical vapor deposition(PECVD). Amorphous silicon nitride is deposited using $SiH_4$ and $NH_3$ gas. At this time, electrical and optical characteristics of amorphous silicon nitride and deposition rate are changed under deposition condition such as $SiH_4$, $NH_3$ and $N_2$ gas flow rate, chamber pressure, rf power and substrate temperature. From the experimental results, we can estimate that the deposition condition makes a good electrical characteristic of amorphous silicon nitride thin film.

• Journal of Surface Science and Engineering
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• v.55 no.1
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• pp.24-31
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• 2022

This study investigated the effect of pre-treatment on the PEO film formation of AZ91 Mg alloy. The pre-treatment was conducted for 10 min at room temperature in 0.5 M oxalic acid (C₂H₂O₄) solution containing various ammonium fluoride (NH₄F) concentrations. The pre-treated AZ91 Mg specimens were anodized at 100 mA/cm² of 300 Hz AC for 2 min in 0.1 M NaOH + 0.4 M Na₂SiO₃ solution. When AZ91 Mg alloy was pretreated in 0.5 M oxalic acid with NH₄F concentration less than 0.3 M, continuous dissolution of the AZ91 Mg alloy occurred together with the formation of black smuts and arc initiation time for PEO film formation was very late. It was noticed that corrosion rate of the AZ91 Mg alloy became faster if small amount of NH₄F concentration, 0.1 M, is added. The fast corrosion is attributable to fast formation of porous fluoride together with porous oxides in the reaction products. On the other hand, when AZ91 Mg alloy was pretreated in 0.5 M oxalic acid with sufficient NH₄F more than 0.3 M, a thin and dense protective film was formed on the AZ91 Mg alloy surface which resulted in faster initiation of arcs and formation of PEO film.

• Journal of Surface Science and Engineering
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• v.39 no.3
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• pp.87-92
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• 2006

The characteristic of interface layer and the effect of bias voltage on the microstructure of c-BN films were studied in the microwave plasma hot filament C.V.D process. c-BN films were deposited on a high speed steel(SKH-51) substrate by hot filament CVD technique assisted with a microwave plasma to develop a high performance of resistance coating tool. c-BN films were obtained at a gas pressure of 20 Torr, vias voltage of 300 V and substrate temperature of $800^{\circ}C$ in $B_2H_6-NH_3-H_2$ gas system. It was found that a thin layer of hexagonal boron nitride(h-BN) phase exists at the interface between c-BN layer and substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.211-211
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• 1999

Titanium nitride (TiN) thin films have useful properties including high hardness, good electrical conductivity, high melting point, and chemical inertness. The applications have included wear-resistant hard coatings on machine tools and bearings, decorative coating making use of the golden color, thermal control coatings for widows, and erosion resistant coatings for spacecraft plasma probes. For all these applications as feature sizes shrink and aspect ratios grow, the issue of good step coverage becomes increasingly important. It is therefore essential to manufacture conformal coatings of TiN. The growth of TiN thin films by chemical vapor deposition (CVD) is of great interest for achieving conformal deposition. The most widely used precursor for TiN is TiCl4 and NH3. However, chlorine impurity in the as-grown films and relatively high deposition temperature (>$600^{\circ}C$) are considered major drawbacks from actual device fabrication. To overcome these problems, recently, MOCVD processes including plasma assisted have been suggested. In this study, therefore, we have doposited Ti(C, N) thin films on Si(100) and D2 steel substrates in the temperature range of 150-30$0^{\circ}C$ using tetrakis diethylamido titanium (TDEAT) and titanium isopropoxide (TIP) by pulsed DC plamsa enhanced metal-organic chemical vapor deposition (PEMOCVD) method. Polycrystalline Ti(C, N) thin films were successfully grown on either D2 steel or Si(100) surfaces at temperature as low as 15$0^{\circ}C$. Compositions of the as-grown films were determined with XPS and RBS. From XPS analysis, thin films of Ti(C, N) with low oxygen concentration were obtained. RBS data were also confirmed the changes of stoichiometry and microhardness of our films. Radical formation and ionization behaviors in plasma are analyzed by optical emission spectroscopy (OES) at various pulsed bias and gases conditions. H2 and He+H2 gases are used as carrier gases to compare plasma parameter and the effect of N2 and NH3 gases as reactive gas is also evaluated in reduction of C content of the films. In this study, we fond that He and H2 mixture gas is very effective in enhancing ionization of radicals, especially N resulting is high hardness. The higher hardness of film is obtained to be ca. 1700 HK 0.01 but it depends on gas species and bias voltage. The proper process is evident for H and N2 gas atmosphere and bias voltage of 600V. However, NH3 gas highly reduces formation of CN radical, thereby decreasing C content of Ti(C, N) thin films in a great deal. Compared to PVD TiN films, the Ti(C, N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85% with an aspect ratio of more than 3.