• Journal of Korean Society for Atmospheric Environment
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• v.11 no.2
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• pp.185-190
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• 1995

Recently, because of the worse of the air pollution, the excessive airtught of building and the inferiority of air conditioning system, the development of high efficiency air purification technology was enlarged to the environmental improvement of an indoor or a harmful working condition. The air purification technology has used chemical filters or charcoal filters or charcoal to remove hazardouse gaseous pollutants (SO$_{x}$, NO$_{x}$, NH$_{3}$, etc.) by air pollutant control technology, but they have many problems of high pressure loss, short life, wide space possession, and treatment of secondary wastes. For these reason, the object of reasearch shall be hazardous gaseous pollutants removal by the surface discharge induced plasma chemical process that is A.C. discharge of multistreams applied A.C. voltage and frequency between plane induced eletrode and line discharge eletrode of tungsten, platinum or titanium with a high purified alumina sheet having a film-like plane. As a result, the control performance for hazardous gaseous pollutants showed very high efficiency in the normal temperature and pressure. Also, after comtact oxidation decomposition of harmful gaseous pollutants, the remainded ozone concentration was found much lower than that of ACGIH or air pollution criteria in Korea.rea.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.121-122
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• 2011

광도파로 기반 센서의 성능을 개선시키기 위해서는 코어와 클래딩 층의 굴절률 차를 크게 하여 표면감도를 향상시켜야 한다. 이를 위해 센서용 광도파로 코어 층을 위한 고굴절률 SiNx 박막을 플라즈마 화학기상증착(PECVD, plasma enhanced chemical vapor deposition)법을 이용하여 성장한 후 그 표면특성을 분석하였다. 이 때 플라즈마 화학기상증착 공정 조건 중 NH3 가스를 제외하여 Si 성분이 많은 고굴절률 SiNx 박막의 성장을 유도하고 He/SiH4 가스유량비를 0에서 100까지 변화시켜 SiNx 박막의 표면거칠기를 제어하였다. Si기판 위에 SiNx 박막을 10분 성장 후 BOE(buffered oxide etchant)로 선택식각하여 그 박막두께를 alpha step으로 측정하는 방법으로 He/SiH4 가스유량비 조건별 박막성장률을 계산하였다. 그 결과 He/SiH4 가스유량비 증가함에 따라 박막성장률이 33 nm/min에서 19 nm/min으로 선형적인 감소함을 알 수 있었다. 박막두께가 190 nm가 되도록 He/SiH4 가스유량비 조건별 SiNx 박막을 성장한 후 그 표면특성을 AFM (atomic force microscope)으로 관찰하였다. 이를 통해 He/SiH4 가스유량비가 50일 때 SiNx 박막의 표면거칠기가 최소가 됨을 알 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.516-516
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• 2013

Flexible Display를 제작하기 위해서는 유기소자를 보호하는 보호막이 필요하다. 유기소자는 산소 및 수분에 매우 취약하기 때문에 장수명을 확보하기 위해서는 추가적인 보호층이 필요하다. 본 논문에서는 이를 위해 Encapsulation 중 한 방법인 Barrier Film을 제작하고 그에 따른 광학적인 특성 및 수분 투습율을 조사하였다. Barrier film의 광학적 분석 방법으로는 XPS, SEM, AFM, Transmittance를 측정하였으며, XPS는 박막내의 화학적인 결합을 알기 위해서 사용되었고, SEM은 박막의 두께 및 박막내의 결함을 파악하고자 하였다. SEM을 통해 증착속도가 32.6 nm/m이라는 것을 관찰할 수 있었다. AFM을 통해 증착된 박막의 표면 거칠기를 파악하였다. Transmittance는 PET 기판을 사용하여 가시광 영역에서 80%이상의 투과도를 나타내었다. PECVD 장비를 사용하여 SiH4, NH3, N2가스를 사용하여 PET 필름 위에 박막을 증착하였으며, 유량을 10~400 sccm 내에서 변화시키고, RF Power는 각각 30~300 W 15분간 증착하였다. 제작된 보호막의 수분투습율은 $2{\times}10{_2}^{-2}g/m^2/day$ 이하의 값을 나타내었다.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.6
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• pp.113-120
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• 2007

Chemical vapor deposition (CVD) is one of the various synthesis methods that have been employed for carbon nanotube (CNT) growth. In particular, Ren et al reported that large areas of vertically aligned multi-wall carbon nanotubes could be grown using a direct current (dc) PECVD system. The synthesis of CNT requires a metal catalyst layer, etchant gas, and a carbon source. In this work, the substrates consists of Si wafers with Ni-deposited film. Ammonia $NH_3$) and acetylene ($C_2H_2$) were used as the etchant gases and carbon source, respectively. Pretreated conditions had an influence on vertical growth and density of CNTs. And patterned growth of CNTs could be achieved by lithographical defining the Ni catalyst prior to growth. The length of single CNT was increased as niclel dot size increased, but the growth rate was reduced when nickel dot size was more than 200 nm due to the synthesis of several CNTs on single Ni dot. The morphology of the carbon nanotubes by TEM showed that vertical CNTs were multi-wall and tip-type growth mode structure in which a Ni cap was at the end of the CNT.

• Journal of Environmental Health Sciences
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• v.16 no.2
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• pp.113-119
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• 1990

Many studies on the analysis of cations in blood have been reported. However, no suitable method for the pretreatment of blood for the determination of cations by Ion Chromotography. As a result, pretreatment method that the membrane filtration of plasma a diluted 1 to 100 fold acidified pH 3.5 was found to be the most suitable. The recoveris of monovalent cations in blood were yield 101%(Na$^{+}$). 102%(NH$^{+}_{4}$) and 101%(K$^{+}$) Determinations of divalent cations(Mg and Ca ions) in blood by Ion chromatography were summarized as followed conditions Separator Column : CS$_{3}$. Suppressor Column : CMMS. Eluent conen : 25m M-HCl/2mM-Histidine. Regenerant conen: 40mM-Ba(OH)$_{2}$.

• Journal of Soil and Groundwater Environment
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• v.22 no.6
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• pp.22-28
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• 2017

The accuracy of analytical results in response to the use of different additives ($NH_4Cl$, KCl, $LaCl_3$) and oxidant gases was evaluated and compared by using Atomic Absorption Spectrometry (AAS). Identification of spectroscopic interferences and possible improvements in Inductively Coupled Plasma-Atomic Emission Spectrometry (ICP-AES) analysis were also discussed. The average accuracies of total chromium using Certified Reference Materials (CRMs) were found to be 72.1~94.2% in air/acetylene flame condition by AAS, and they were improved to 100.5~110.5% when the oxidants was changed to nitrous oxide rather than adding the additives. The field samples showed similar trends to CRMs, but chromium concentrations were highly variable depending on analytical conditions. The average accuracies using CRMs were estimated to be 89.3~166.1% by ICP-AES, and improved to below 121.7% after eliminating iron interference. Field samples with low chromium and high iron concentration were measured to be > 30% lower in total chromium concentrations by ICP-AES than AAS in nitrous oxide/acetylene flame. Total chromium concentrations in soil could be analyzed with better accuracy under nitrous oxide/acetylene flame by AAS because it was more effective to increase the temperature of the flame than to eliminate the chemical interference for maximizing atomization of chromium. When using ICP-AES, interference substances, total chromium levels, and analytical conditions should be also considered.

• Asian-Australasian Journal of Animal Sciences
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• v.19 no.11
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• pp.1623-1631
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• 2006

The objective of this study was to evaluate the effect of protein and energy on goats fed oil palm fronds (OPF) as roughages. Twenty-four male Saanen goats aged between 7 and 8 months and weighing $23.4{\pm}1.6kg$ were used in a $2{\times}3$ factorial design. Factors were three levels of urea (3%, 4% or 5%) and two levels of energy (low energy (LE) or high energy (HE)). On average, all parameters measured, including dry matter intake (DMI), nutrient digestibility, digestible nutrient intakes, ruminal ammonia-N ($NH_3$-N), ruminal total volatile fatty acid (total VFA) and individual VFA concentrations (mM/L), microbial N supply, P/E ratio and N retention were higher for HE compared to LE diets. Significant (p<0.05) interactions were found between levels of urea and energy for nonstructural carbohydrate (NSC) and energy (DE) digestibilities, ruminal $NH_3$-N and total VFA concentrations. HE diets had higher N absorption and retention than LE diets. Interactions between urea and energy for plasma urea nitrogen (PUN), heat production (HP), and urine and faeces N excretion were significantly lower (p<0.05) for the HE diets than those recorded for the LE diets. The results indicated that supplementation of energy enhanced utilization of urea and resulted in higher animal performance as a consequence of improved ruminal fermentation, microbial yield and N balance. However, the optimal level of urea supplementation remained at 3% in the HE diet.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.8
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• pp.859-869
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• 2005

The commercial $V_2O_5-WO_3/TiO_2$ catalysts which had been exposed to the off gas from incinerator for a long time were regenerated by physical and chemical treatment. The catalytic properties and NOx conversion reactivity of those catalysts were examined by analysis equipment and NOx conversion experiment. The characterization of the catalysts were performed by XRD(x-ray diffractometer), BET, POROSIMETER, EDX(energy dispersive x-ray spectrometer), ICP(inductively coupled plasma), TGA(thermogravimetric analyzer) and SEM (scanning electron microscopy). NOx conversion experiment were performed with simulated off gas of the incinerator and $NH_3$ was used as a reductant of SCR reaction. Among the regeneration treatment methods which were applied to regenerate the aged catalysts in this study, it showed that the heat treatment method had excellent regeneration effect on the catalytic performance for NOx conversion. The catalytic performance of the regenerated catalysts with heat treatment method were recovered over than 95% of that of fresh catalyst. For the regenerated catalysts with the acid solution(pH 5) and the alkali solution(pH 12), the catalytic performance were recovered over than 90% of that of fresh catalyst. From the characterization results of the regenerated catalysts, the specific surface area was recovered in the range of $85{\sim}95%$ of that of fresh catalyst. S and Ca element, which are well known as the deactivation materials for the SCR catalysts, accumulated on the aged catalyst surface were removed up to maximum 99%. Among the P, Cr, Zn and Pb elements accumulated on the aged catalyst surface, P, Cr and Zn element were removed up to 95%. But the Pb element were removed in the range of $10{\sim}30%$ of that of fresh catalyst.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.532-536
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• 2011

The silicon nitride films were prepared by chemical vapor deposition using inductively coupled plasma. During the deposition, the substrate was heated at $150^{\circ}C$ and power 1,000 W. To evolution low temperature manufacture, we have studied the role of source gases, $SiH_4$, $NH_3$, $N_2$, and $H_2$, to produce Si-N and N-H bond in a-SiNx:H film growth. $SiH_4$, $NH_3$, and $N_2$ flow rate fixed at 100, 10, and 10 sccm, $H_2$ flow rate varied from 0 to 10 sccm by small scale. To get the electrical characteristics, we makes MIM structure, and analysis surface bonding state. Experimental data show that Si-N and N-H bond is increased and hence electrical characteristics is showed 3 MV/cm breakdown-voltage, and leakage-current $10^{-7}\;A/cm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.241-241
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• 2009

For the Radio Frequency Integrated Passive Device (RFIPD) application, we have successfully developed and characterized high break-down voltage metal-insulator-metal (MIM) capacitors with 2,000 ${\AA}$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which deposited with $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$ chamber temperature. At the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the AFM RMS value of about 2,000 ${\AA}$ silicon nitride on the bottom metal was the lowest of 0.862 nm and break-down electric field was the highest of about 8.0 MV/cm with the capacitance density of 326.5 $pF/mm^2$.