• Title/Summary/Keyword: NB41A3

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Low Temperature Sintering and Microwave Dielectric Properties of Ba5Nb4O15 Ceramics (Ba5Nb4O15 세라믹스의 저온소결 및 마이크로파 유전특성)

  • Kim, Jong-Dae;Kim, Eung-Soo
    • Journal of the Korean Ceramic Society
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    • v.41 no.10 s.269
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    • pp.783-787
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    • 2004
  • Microwave dielectric properties and the microstructure of $Ba_5Nb_4O_{15}$ ceramics with $PbO-B_2O_3-SiO_2$ glass frit were investigated to reduce the sintering temperature of $Ba_5Nb_4O_{15}$ ceramics as a function of the amount of glass frit from $0.5wt\%$ to $10wt\%$ and the sintering condition. The sintered density and the microwave dielectric properties of $Ba_5Nb_4O_{15}$ ceramics were remarkably changed with the amount of glass fit which existed as a liquid phase and assisted the densification. $Ba_5Nb_4O_{15}$ with $3wt\%$ $PbO-B_2O_3-SiO_2$ glass frit sintered at $900^{\circ}C$ for 2 h showed dielectric constant (K) of 41.4, a quality factor (Q $\times$f) of 13,485 GHz, and a Temperature Coefficient of resonant Frequency (TCF) of 9 ppm/$^{\circ}C$. Due to no trace of physical and chemical reaction between this composition and Ag electrode cofired at $900^{\circ}C$ for 2 h, this ceramics can be a good candidate for the multilayer dielectric filter.

Novel SAW-based pressure sensor on $41^{\circ}YX\;LiNbO_3$ ($41^{\circ}YX\;LiNbO_3$ 기반 SAW 압력센서 개발)

  • Wang, Wen;Lee, Kee-Keun;Hwang, Jung-Soo;Kim, Gen-Young;Yang, Sang-Sik
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.43 no.1 s.343
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    • pp.33-40
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    • 2006
  • This paper presents a novel surface acoustic wave (SAW)-based pressure sensor, which is composed of single phase unidirectional transducer (SPUDT), three reflectors, and a deep etched substrate for bonding underneath the diaphragm. Using the coupling of modes (COM) theory, the SAW device was simulated, and the optimized design parameters were extracted. Finite Element Methods (FEM) was utilized to calculate the bending and stress/strain distribution on the diaphragm under a given pressure. Using extracted optimal design parameters, a 440 MHz reflective delay line on 41o YX LiNbO3 was developed. High S/N ratio, shan reflection peaks, and small spurious peaks were observed. The measured S11 results showed a good agreement with simulated results obtained from coupling-of-modes (COM) modeling and Finite Element Method (FEM) analysis.

The Dielectric Properties of $Ba_{1-x}A-x(Mg_{1/3}Nb_{2/3})O_3$ (A = Sr, Ca) Ceramics ($Ba_{1-x}A-x(Mg_{1/3}Nb_{2/3})O_3$ (A = Sr, Ca) 세라믹스의 유전특성)

  • 김부근;김재윤;김강언;정수태;조상희
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.248-251
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    • 1999
  • The microwave dielectric properties of The Dielectric Properties of $Ba_{1-x}$A$_{x}$(Mg$_{1}$3/Nb$_{2}$3/)O$_3$ (A = Sr, Ca, x = 0, 0.2 ,0.4 ,0.6, 0.8, 1.0) were investigated. In composition of $Ba_{1-x}$A$_{x}$(Mg$_{1}$3/Nb$_{2}$3/)O, densities are decreased with increasing x values. Grain sizes are decreased with Sr content and Increased with Ca content. The hexagonally ordered superstructure was observed in $Ba_{1-x}$Sr$_{x}$(Mg$_{1}$3/Nb$_{2}$3/)O$_3$(BSMN) systems, the intensity of superlattice increased with x value. In $Ba_{1-x}$Cr$_{x}$(Mg$_{1}$3/Nb$_{2}$3/)O$_3$(BSMN) systems, the additional diffraction patterns were shown. The highest value of $\varepsilon$$_{r}$ was shown in x=0.2 of BCMN systems and the value was 41.9. The highest Q$\times$f was shown in x=0.2 of BSMN systems and the value was 68,000. $\tau$$_{f}$ were shown 0 ppm/$^{\circ}C$ near x=0.8.TEX> near x=0.8.0.8.

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Simulation Study of RSFQ OR-gates and Their Layouts for Nb Process (RSFQ OR-gates의 전산모사 실험 및 Nb 공정에 적합한 설계 연구)

  • 남두우;홍희송;강준희
    • Progress in Superconductivity
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    • v.4 no.1
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    • pp.37-41
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    • 2002
  • In this work. we have designed two different kinds of Rapid Single Flux Quantum (RSFQ) OR-gates. One was based on the already developed RSFQ cells and the other was aimed to develop a more compact version. In the first circuit, we used a combination of two D Flip-Flops and a merger and in the other circuit we used a combination of RS Flip-Flops and Confluence Buffer. We tested the circuit performance by using the simulation tools, Xic and Wrspice. We obtained the operation margins of the circuit elements by a margin calculation program, and we obtained the minimum operation margins of $\pm$30%. The circuits were laid out, aimed to fabricate by using the existing KRISS Nb process. KRISS Nb process includes the $Nb/Al_2$$O_3$/Nb trilayer fabricated by DC magnetron sputtering and the reactive ion etching technique for the definition of the features. The major tools used in the layouts were Xic and L-meter.

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Coverage Class Adaptation Schemes Considering Device Characteristics in a 3GPP Narrowband IoT System (3GPP 협대역 사물인터넷 시스템에서 단말의 특징을 고려한 커버리지 클래스 적응 기법)

  • Nam, Yujin;So, Jaewoo;Na, Minsoo;Choi, Changsoon
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.41 no.9
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    • pp.1026-1037
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    • 2016
  • 3rd Generation Partnership Project (3GPP) is the progressing standardization of the narrowband IoT (NB-IoT) system to support massive devices for the Internet of Things (IoT) services. The NB-IoT system uses a coverage class technique to increase the performance of the NB-IoT system while serving massive devices in very wide coverage area. A moving device can change the coverage class according to the distance or the channel state between the base station and the moving device. However, in the conventional NB-IoT standard, the performance of the NB-IoT system degrades because the coverage class is changed based on the fixed criterion. This paper proposes the coverage class adaptation schemes to increase the performance of the NB-IoT system by dynamically change the coverage class according to the location or the channel state of the device. Simulation results show that the proposed coverage class adaptation scheme decreases both the signaling overhead and the PDCCH decoding error rate in comparison with the conventional coverage class adaptation scheme in the 3GPP standard.

A.C. Impedance Properties of HA/Ti Compound Layer coated Ti-30Ta-(3~15)Nb Alloys (Ti-30Ta-(3~15)Nb 합금에 HA/Ti 복합 코팅한 표면의 교류임피던스 특성)

  • Jeong, Y.H.;Lee, H.J.;Moong, Y.P;Park, G.H.;Jang, S.H.;Son, M.K.;Choe, H.C.
    • Journal of the Korean institute of surface engineering
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    • v.41 no.5
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    • pp.181-188
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    • 2008
  • A.C. impedance properties of HA/Ti compound layer coated Ti-30Ta-($3{\sim}15$)Nb alloys have been studied by electrochemical method. Ti-30Ta binary alloys contained 3, 7, 10 and 15 wt% Nb were manufactured by the vacuum furnace system. And then specimen was homogenized at $1000^{\circ}C$ for 24 hrs. The sample was cut and polished for corrosion test and coating. It was coated with HA/Ti compound layer by magnetron sputter. The non-coated and coated morphology of Ti alloy were analyzed by X-ray diffractometer (XRD), energy X-ray dispersive spectroscopy (EDX) and filed emission scanning electron microscope (FE-SEM). The corrosion behaviors were investigated using A.C. impedance test (PARSTAT 2273, USA) in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. Ti-30Ta-($3{\sim}15\;wt%$)Nb alloys showed the ${\alpha}+{\beta}$ phase, and $\beta$ phase peak was predominantly appeared in the case of increasingly Nb contents. The microstructures of Ti alloy were transformed from needle-like structure to equiaxed structure as Nb content increased. From the analysis of coating surface, HA/Ti composite surface uniformed coating layer with 750 nm thickness. The growth directions of film were (211), (112), (300) and (202) for HA/Ti composite coating on the surface after heat treatment at $550^{\circ}C$, whereas, the growth direction of film was (110) for Ti coating. The polarization resistance ($R_p$) of HA/Ti composite coated Ti-alloys were higher than those of the Ti and HA coated samples in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. Especially, corrosion resistance of Ti-Ta-Nb system increased as Nb content increased.

Magnetic Properties of $\alpha$-Fe Based Nd-Fe-B Nanocrystalline with High Remanence (고잔류자화 $\alpha$-Fe기 Nd-Fe-B 초미세결정립 합금의 자기특성)

  • 조용수;김윤배;박우식;김창석;김택기
    • Journal of the Korean Magnetics Society
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    • v.5 no.1
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    • pp.38-41
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    • 1995
  • The effects of Nb and Cu additives as will as substitutional Co into $Nd_{4}Fe_{85.5}B_{10.5}$ melt-spun alloy were studied aiming for finding a $\alpha$-Fe based Nd-Fe-B composite alloys with high energy product. The addition of Nb and Cu to $Nd_{4}Fe_{85.5}B_{10.5}$ decreased the average grain size and increased the coercivity up to 207kA/m(2.6kOe), Further-more, the substitution of Co for Fe in $Nd_{4}Fe_{82}B_{10}Nb_{3}Cu_{1}$ alloy resulted in the decrease of the average grain size (<20nm) and improved the hard magnetic properties. The remanence, coercivity and energy product of optimally annealed $Nd_{4}Fe_{74}Co_{8}B_{10}Nb_{3}Cu_{1}$ alloy were 1.345, 219kA/m(2.75kOe) and $95.5kJ/m^{3}$(12MGOe), respectively.

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Piezoelectric properties and microstructure of 0.01Pb(Mg1/2W1/2)O3-0.41Pb(Ni1/3Nb2/3)O3-0.35PbTiO3-0.23PbZrO3thick film with particle size distribution (입자 크기 분포에 따른 0.01Pb(Mg1/2W1/2)O3-0.41Pb(Ni1/3Nb2/3)O3-0.35PbTiO3-0.23PbZrO3 후막의 미세구조 및 압전특성)

  • Moon, Hi-Gyu;Song, Hyun-Cheol;Kim, Sang-Jong;Choi, Ji-Won;Kang, Chong-Yun;Yoon, Seok-Jin
    • Journal of Sensor Science and Technology
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    • v.17 no.6
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    • pp.418-424
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    • 2008
  • The PZT based piezoelectric thick films prepared by screen printing method have been mainly used as a functional material for MEMS applications due to their compatibility of MEMS process. However the screen printed thick films generally reveal poor electrical and mechanical properties because of their porous microstructure. To improve microstructure we mixed attrition milled powder with ball milled powder of 0.01Pb$(Mg_{1/2}W_{1/2})O_3$-0.41Pb$(Ni_{1/3}Nb_{2/3})O_3$-$0.35PbTiO_3$-$0.23PbZrO_3$+0.1 wt% ${Y_2}{O_3}$+1.5 wt% ZnO composition. By mixing 25 % of attrition milled powder and 75 % of ball milled powder, the broadest particle size distribution was obtained, leading to a dense thick film with crack-free microstructure and improved dielectric properties. The X-ray diffraction analysis revealed that the film was in wellcrystallized perovskite phase. The remanent polarization was increased from $13.7{\mu}C/cm^2$ to $23.3{\mu}C/cm^2$ at the addition of 25 % attrition milled powder.

Optical Properties of Stoichiometric Tb/Mn Co-doped LiNbO3 Single Crystals Dependent on Mn Concentration (Mn 첨가량 변화에 따른 Tb/Mn이 첨가된 화학양론조성 LiNbO3 단결정의 광학적 특성)

  • Lee, Sung-Mun;Shin, Tong-Ik;Kim, Geun-Young;Back, Seung-Wook;Yoon, Dae-Ho
    • Journal of the Korean Ceramic Society
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    • v.41 no.1
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    • pp.92-95
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    • 2004
  • Using the Micro-Pulling Down (${\mu}$-PD), $MnO_2$ and $Tb_4O_7$ co-doped crack-free stoichiometric $LiNbO_3$ single crystals were grown in 1.0 mm diameter and 25-30 mm length for c-axis. The homogeneous distributions of $MnO_2$ and $Tb_4O_7$ concentration were confirmed by the Electron Probe Microanalysis (EPMA). Also, the infrared OH absorption band of the single crystals observed by using a Fourier Transform-Infrared Spectrophotometer (FT-IR) at room temperature and the photoluminescence spectra was measured with respect to the $MnO_2$ and $Tb_4O_7$ doping.

LNOI Photonics Technology Trends (LNOI 포토닉스의 기술 동향)

  • Park, J.;Han, S.P.;Kim, S.;Song, M.;Kim, K.S.
    • Electronics and Telecommunications Trends
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    • v.36 no.3
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    • pp.41-52
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    • 2021
  • Recently, LNOI photonics technology has attracted attention as a photonics platform capable of integrating ultra-high-speed, low power consumption, and high nonlinearity optical devices, as it is possible to manufacture LiNbO3 optical waveguides with ultra-low optical loss and a radius of curvature of several tens of micrometers. Here, we will briefly compare various photonics platforms, such as Si, InP, SiN, and LNOI, describe the current research trends of LNOI photonics, and discuss the direction of photonics technology at the conclusion.