• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.7-11
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• 2009

In this study, p-channel silicon-oxide-nitride-oxide-silicon(SONOS) transistors are fabricated and characterized as an unit cell for NAND flash memory. The SONOS transistors are fabricated by $0.13{\mu}m$ low power standard logic process technology. The thicknesses of gate insulators are 2.0 nm for the tunnel oxide, 1.4 nm for the nitride layer, and 4.9 nm for the blocking oxide. The fabricated SONOS transistors show low programming voltage and fast erase speed. However, the retention and endurance of the devices show poor characteristics.

• Journal of the Korea Society of Computer and Information
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• v.11 no.6 s.44
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• pp.113-123
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• 2006

Flash memory has been increasingly used in handhold devices not only for data storage, but also for code storage. Because NAND flash memory only provides sequential access feature, a traditionally accepted solution to execute the program from NAND flash memory is shadowing. But, shadowing has significant drawbacks increasing a booting time of the system and consuming severe DRAM space. Demand paging has obtained significant attention for program execution from NAND flash memory. But. one of the issues is that there has been no effort to bound demand paging cost in flash memory and to analyze the worst case performance of demand paging. For the worst case timing analysis of programs running from NAND flash memory. the worst case demand paging costs should be estimated. In this paper, we propose two different WCRT analysis methods considering demand paging costs, DP-Pessimistic and DP-Accurate, depending on the accuracy and the complexity of analysis. Also, we compare the accuracy butween DP-Pessimistic and DP-Accurate by using the simulation.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.8
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• pp.1962-1969
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• 2009

During past 20 years we have witnessed brilliant advances in major components of computer system, including CPU, memory, network device and HDD. Among these components, in spite of its tremendous advance in capacity, the HDD is the most performance dragging device until now and there is little affirmative forecasting that this problem will be resolved in the near future. We present a new approach to solve this problem using the NAND Flash memory. Researches utilizing Flash memory as storage medium are abundant these days, but almost all of them are targeted to mobile or embedded devices. Our research aims to develop the NAND Flash memory based storage system enough even for enterprise level server systems. This paper present structural and operational mechanism to overcome the weaknesses of existing NAND Flash memory based storage system, and its evaluation.

• Journal of KIISE:Computing Practices and Letters
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• v.15 no.1
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• pp.14-20
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• 2009

Recently, NAND flash memory is used not only for portable devices, but also for personal computers and server computers. Buffer cache replacement policies for the hard disks such as LRU and LFU are not good for NAND flash memories because they do not consider about the characteristics of NAND flash memory. CFLRU and its variants, CFLRU/C, CFLRU/E and DL-CFLRU/E(CFLRUs) are the buffer cache replacement policies considered about the characteristics of NAND flash memories, but their performances are not better than those of LRD. In this paper, we propose a new buffer cache replacement policy for NAND flash memory. Which is based on LFU and is taking into account the characteristics of NAND flash memory. And we estimate the performance of hit ratio and flush operation numbers. The proposed policy shows better hit ratio and the number of flush operation than any other policies.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.2
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• pp.275-282
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• 2015

Since a NAND-flash memory is able to keep data during electricity-off and has small cost to store data per bytes, it is widely used on hand-held devices. It is necessary to use an index in order to process mass data effectively on the flash memory. However, since the flash memory requires high cost for a write operation and does not support an overwrite operation, it is possible to reduce the performance of the index when the disk based index is exploited. In this paper, we implement the fixed grid file index and evaluate the performance of the index on various conditions. To do this, we measure the average processing time by the ratio of query operations and update operations. We also the compare the processing times of the flash memory with those of the magnetic disk.

• Journal of KIISE:Computer Systems and Theory
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• v.35 no.11
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• pp.497-508
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• 2008

Mobile Multimedia File System, MNFS, is a file system which extensively exploits NAND FLASH Memory, Since general Flash file systems does not precisely meet the criteria of mobile devices such as MP3 Player, PMP, Digital Camcorder, MNFS is designed to guarantee the optimal performance of FLASH Memory file system. Among many features MNFS provides, there are three distinguishable characteristics. MNFS guarantees, first, constant response time in sequential write requests of the file system, second, fast file system mounting time, and lastly least memory footprint. MNFS implements four schemes to provide such features, Hybrid mapping scheme to map file system metadata and user data, manipulation of user data allocation to fit allocation unit of file data into allocation unit of NAND FLASH Memory, iBAT (in core only Block Allocation Table) to minimize the metadata, and bottom-up representation of directory. Prototype implementation of MNFS was tested and measured its performance on ARM9 processor and 1Gbit NAND FLASH Memory environment. Its performance was compared with YAFFS, NAND FLASH File system, and FAT file system which use FTL. This enables to observe constant request time for sequential write request. It shows 30 times faster mounting time to YAFFS, and reduces 95% of HEAP memory consumption compared to YAFFS.

• Journal of the Korea Society of Computer and Information
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• v.20 no.6
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• pp.1-11
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• 2015

Recently, NAND flash memories are used for storage devices because of fast access speed and low-power. However, applications of FTL on low power computing devices lead to heavy workloads which result in a memory requirement and an implementation overhead. Consequently, studies of B+-Tree on embedded devices without the FTL have been proposed. The studies of B+-Tree are optimized for performance of inserting and updating records, considering to disadvantages of the NAND flash memory that it can not support in-place update. However, if a general garbage collection method is applied to the previous studies of B+-Tree, a performance of the B+-Tree is reduced, because it generates a rearrangement of the B+-Tree by changing of page positions on the NAND flash memory. Therefor, we propose a novel garbage collection method which can apply to the B+-Tree based on the NAND flash memory without the FTL. The proposed garbage collection method does not generate a rearrangement of the B+-Tree by using a block information table and a proxy block. We implemented the B+-Tree and ${\mu}$-Tree with the proposed garbage collection on physical devices with the NAND flash memory. In experiment results, the proposed garbage collection scheme compared to greedy algorithm garbage collection scheme increased the number of inserted keys by up to about 73% on B+-Tree and decreased elapsed time of garbage collection by up to about 39% on ${\mu}$-Tree.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.138-142
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• 2019

As the NAND flash memory goes to 3D vertical Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) structure, the lateral charge migration can be critical in the reliability performance. Even more, with miniaturization of flash memory cell device, just a little movement of trapped charge can cause reliability problems. In this paper, we propose a method of predicting the trapped charge profile in the retention mode. Charge diffusivity in the charge trapping layer (Si₃N₄) was extracted experimentally, and the effect on the trapped charge profile was demonstrated by the simulation and experiment.

• Journal of the Korea Society of Computer and Information
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• v.26 no.11
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• pp.1-9
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• 2021

3D-NAND flash memory provides high capacity per unit area by stacking 2D-NAND cells having a planar structure. However, due to the nature of the lamination process, there is a problem that the frequency of error occurrence may vary depending on each layer or physical cell location. This phenomenon becomes more pronounced as the number of write/erase(P/E) operations of the flash memory increases. Most flash-based storage devices such as SSDs use ECC for error correction. Since this method provides a fixed strength of data protection for all flash memory pages, it has limitations in 3D NAND flash memory, where the error rate varies depending on the physical location. Therefore, in this paper, pages and layers with different error rates are classified into clusters through the K-means machine learning algorithm, and differentiated data protection strength is applied to each cluster. We classify pages and layers based on the number of errors measured after endurance test, where the error rate varies significantly for each page and layer, and add parity data to stripes for areas vulnerable to errors to provides differentiate data protection strength. We show the possibility that this differentiated data protection policy can contribute to the improvement of reliability and lifespan of 3D NAND flash memory compared to the protection techniques using RAID-like or ECC alone.

• The KIPS Transactions:PartA
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• v.14A no.4
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• pp.235-244
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• 2007

Caching and prefetching policies have been used in most of computer systems to compensate speed differences between primary memory and secondary storage devices. In this paper, we design and implement a Flash Cache Core Module(FCCM) on the YAFFS which operates on a file system layer for NAND flash memory. The FCCM is independent of the underlying kernel in order to support its stability and compatibility. Also, we implement the Dirty-Last memory replacement technique considering the characteristics of flash memory, and the waiting queue for pages to be prefetched according to page hit. The FCCM reduced the number of I/Os and the amount of prefetched pages by maximum 55%(20% on average) and maximum 55%(24% on average), respectively, comparing with caching and prefetching policies of Linux.