• Elastomers and Composites
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• v.54 no.3
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• pp.252-256
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• 2019

Fullerene oxide[$C_{60}(O)_n$, ($n{\geq}1$)] was synthesized by dissolving fullerene[$C_{60}$] and 3-chloroperoxybenzoic acid in toluene under refluxing condition for 5 h. Hybrid fullerene oxide-silver nanoparticle composites were synthesized by dissolving fullerene oxide and silver nitrate[$AgNO_3$] in diethylene glycol under ultrasonic irradiation for 3 h. The synthesized hybrid nanocomposites were characterized by X-ray diffraction, scanning electron microscopy, and ultraviolet-visible[UV-vis] spectroscopy. The catalytic activity for the reduction of various nitroanilines[NAs] was identified by UV-vis spectrophotometer. The efficiency of the catalytic reduction by the synthesized hybrid nanocomposites has an order of 4-NA > 2-NA > 3-NA.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.38 no.4
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• pp.369-375
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• 2010

The study on the characteristics of nitrous oxide catalytic decomposition was carried out to utilize the nitrous oxide as a propellant. The Pt, Ir and Ru were synthesized to select a high performance catalyst for the nitrous oxide decomposition reaction. The respective catalyst precursors were loaded in the $Al_2O_3$ support using an wet impregnation method. The $N_2O$ conversion as a variation of space velocity and reaction temperature was measured using a tubular reactor. The catalyst loss was measured to evaluate the durability of catalysts after the reaction at $800^{\circ}C$ for 2 hours. The $N_2O$ conversion was increased at the decrease of space velocity and at the increase of temperature. The Ru/$Al_2O_3$ catalyst had the highest $N_2O$ conversion at low temperature and the best durability.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.5
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• pp.729-736
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• 1990

Oxide (RTO), nitrided-oxide(NO), and reoxidized-nitrided-oxide(ONO) films were formed by sequential rapid thermal processing. The film composition was investigated by Auger electron spectroscopy(AES). The Si/SiO2 interface and SiO2 surface are nitrided more preferentially than SiO2 bulk. When the NO is reoxidized, [N](atomic concentration of N) in the NO film decreased` especially, the decrease of [N] at the surface is considerable. The weaker the nitridation condition is, the larger the increase of thickness is as the reoxidation proceeds. The elelctrical characteristics of RTO, NO, and ONO films were evaluated by 1-V, high frequency (1 MHz) C-V, and high frequency C-V after constant current stress. The ONO film-which has 8 nm thick initial oxide, nitrided in NH3 at 950\ulcorner for 60 s, reoxidized in O2 at 1100\ulcorner for 60 s-shows good electrical characteristics such as higher electrical breakdown voltage and less variation of flat band voltage under high electric field than RTO, and NO films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.53-53
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• 2009

Charge trap flash memory devices with modified tunneling barriers were fabricated using the tunneling barrier engineering technique. Variable oxide thickness (VARIOT) barrier and CRESTED barrier consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were used as engineered tunneling barriers. The VARIOT type tunneling barrier composed of oxide-nitride-oxide (ONO) layers revealed reliable electrical characteristics; long retention time and superior endurance. On the other hand, the CRESTED tunneling barrier composed of nitride-oxide-nitride (NON) layers showed degraded retention and endurance characteristics. It is found that the degradation of NON barrier is associated with the increase of interface state density at tunneling barrier/silicon channel by programming and erasing (P/E) stress.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.63-74
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• 1994

The ultrathin oxide films less than 100$\AA$ were grown by thermal oxidation in $N_2O$ ambient to improve the controllability of thickness, thickness uniformity, process reproducibility and their electrical properties. Oxidation rate was reduced significantly at very thin region due to the formation of oxynitride layer in $N_2O$ ambient and moreover nitridation of the oxide layer was simultaneously accompanied during growth. The nitrogen incorporation in the grown oxide layer was characterized with the wet chemical etch-rate and ESCA analysis of the grown oxide layer. All the oxides thin films grown in $N_2O$, pure and dilute $O_2$ ambients show Fowler-Nordheim electrical conduction. The electrical characteristics of thin oxide films grown in $N_2O$ such as leakage current, electrical breakdown, interface trap density generation due to the injected electron and reliability were better than those in pure or dilute ambient. These improved properties can be explained by the fact that the weak Si-0 bond is reduced by stress relaxation during oxidation and replacement by strong Si-N bond, and thus the trap sites are reduced.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.9-17
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• 1996

Plasma enhanced chemical vapor deposition (PECVD) allows low temperature processing and so it is widely used, but it causes instability of devices due to serious amount of impurities within the film. In this paper, electrical and chemical characteristics of the PECVD oxynitride film formed by different N$_{2}$O to N$_{2}$O+NH$_{3}$ gas ratio is studied. It has been found that hydrogen concentration of PECVD oxynitride film was decreased from 4.25*10$^{22}$ [cm$^{-2}$ ] to 1.18*10$^{21}$ [cm$^{-2}$ ] according to the increase of N$_{2}$O gas. It was also found that PECVD oxynitride films have low trap density in the oxide and interface in comparison with PECVD nitroxide films, and has higher refractive index and capacitance than oxide films. In particular, oxynitride film formed in gas ratio of N$_{2}$O/(N$_{2}$O+NH$_{3}$)= 0.88 shows increased capacitance and decreased leakage current due to small portion of hydrogen in oxide and the accumulation of nitrogen about 4[atm.%] at the interface.

• Korean Journal of Materials Research
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• v.12 no.9
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• pp.724-728
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• 2002

Inductively-coupled $N_2$O plasma was utilized to grow silicon dioxide at low temperature and applied to fabricate polycrystalline-silicon thin film transistors. At $400^{\circ}C$, the thickness of oxide was limited to 5nm and the oxide contained Si≡N and ≡Si-N-Si≡ bonds. The nitrogen incorporation improved breakdown field to 10MV/cm and reduced the interface charge density to $1.52$\times$10^{11}$ $cm^2$ with negative charge. The $N_2$O plasma gate oxide enhanced the field effect mobility of polycrystalline thin film transistor, compared to $O_2$ plasma gate oxide, due to the reduced interface charge at the $Si/SiO_2$ interface and also due to the reduced trap density at Si grain boundaries by nitrogen passivation.

• Journal of the Korean Chemical Society
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• v.45 no.3
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• pp.264-267
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• 2001

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2009.11a
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• pp.269-272
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• 2009

Catalytic decomposition of nitrous oxide was investigated experimentally. Two noble metal catalyst (Pt, Ir) were chosen to decompose nitrous oxide. Each catalyst was tested with different chamber pressure and preheating temperature. Ir decomposed $N_2O$ at lower temperature ($230^{\circ}C$) and suitable for $N_2O$ decomposition. In addition, the minimum required preheating temperature decreased as the chamber pressure increased. However, deactivation of Ir catalyst was observed during the experiments.

• Journal of the Korean Chemical Society
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• v.54 no.4
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• pp.380-386
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• 2010

We have investigated the growth kinetics of Al oxide film by anodization in sulfuric acid solution and the electronic properties of this film using electrochemical impedance spectroscopy. Al oxide film consisted $Al_2O_3$ was grown based on the point defect model and shown the eclctronic properties of n-type semiconductor.