• Korean Journal of Materials Research
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• v.26 no.2
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• pp.84-89
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• 2016

We present the rectifying and nitrogen monoxide (NO) gas sensing properties of an oxide semiconductor heterostructure composed of n-type zinc oxide (ZnO) and p-type copper oxide thin layers. A CuO thin layer was first formed on an indium-tin-oxide-coated glass substrate by sol-gel spin coating method using copper acetate monohydrate and diethanolamine as precursors; then, to form a p-n oxide heterostructure, a ZnO thin layer was spin-coated on the CuO layer using copper zinc dihydrate and diethanolamine. The crystalline structures and microstructures of the heterojunction materials were examined using X-ray diffraction and scanning electron microscopy. The observed current-voltage characteristics of the p-n oxide heterostructure showed a non-linear diode-like rectifying behavior at various temperatures ranging from room temperature to $200^{\circ}C$. When the spin-coated ZnO/CuO heterojunction was exposed to the acceptor gas NO in dry air, a significant increase in the forward diode current of the p-n junction was observed. It was found that the NO gas response of the ZnO/CuO heterostructure exhibited a maximum value at an operating temperature as low as $100^{\circ}C$ and increased gradually with increasing of the NO gas concentration up to 30 ppm. The experimental results indicate that the spin-coated ZnO/CuO heterojunction structure has significant potential applications for gas sensors and other oxide electronics.

• Journal of Environmental Science International
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• v.20 no.6
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• pp.755-765
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• 2011

Nitrous oxide ($N_2O$) is one of six greenhouse gases listed up in the Kyoto Protocol, and it effects a strong global warming because of its much greater global warming potential (GWP), by 310 times over a 100-year time horizon, than $CO_2$. Although such $N_2O$ emissions from both natural and anthropogenic sources occur, the latter can be controlled using suitable abatement technologies, depending on them, to reduce $N_2O$ below acceptable or feasible levels. This paper has extensively reviewed the anthropogenic $N_2O$ emission sources and their related compositions, and the state-of-the-art non-catalytic and catalytic technologies of the emissions controls available currently to representative, large $N_2O$ emission sources, such as adipic acid production plants. Challengeable approaches to this source are discussed to promote establishment of advanced $N_2O$ emission control technologies.

• Korean Journal of Environmental Agriculture
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• v.31 no.3
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• pp.205-211
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• 2012

BACKGROUND: Generally, nitrogen (N) fertilization higher than the recommended dose is applied during vegetable cultivation to increase productivity. But higher N fertilization also increases the concentrations of nitrate ions and nitrous oxide in soil. In this experiment, the impact of N fertilization was studied on nitrous oxide ($N_2O$) emission to standardize the optimum fertilization level for minimizing $N_2O$ emission as well as increasing crop productivity. Herein, we developed $N_2O$ emission inventory for upland soil region during red pepper and Chinese milk vetch cultivation. METHODS AND RESULTS: Nitrogen fertilizers were applied at different rates to study their effect on $N_2O$ emission during red pepper and Chinese milk vetch cultivation. The gas samples were collected by static closed chamber method and $N_2O$ concentration was measured by gas chromatography. The total $N_2O$ flux was steadily increased due to increasing N fertilization level, though the overall pattern of $N_2O$ emission dynamics was same. Application of N fertilization higher than the recommended dose increased the values of both seasonal $N_2O$ flux (94.5% for Chinese cabbage and 30.7% for red pepper) and $N_2O$ emission per unit crop yield (77.9% for Chinese cabbage and 23.2% for red pepper). Nitrous oxide inventory revealed that the $N_2O$ emission due to unit amount of N application from short-duration vegetable field in fall (autumn) season (6.36 kg/ha) was almost 70% higher than that during summer season. CONCLUSION: Application of excess N-fertilizers increased seasonal $N_2O$ flux especially the $N_2O$ flux per unit yield during both Chinese cabbage and red pepper cultivation. This suggested that the higher N fertilization than the recommended dose actually facilitates $N_2O$ emission than boosting plant productivity. The $N_2O$ inventory for upland farming in temperate region like Korea revealed that $N_2O$ flux due to unit amount of N-fertilizer application for Chinese cabbage in fall (autumn) season was comparatively higher than that of summer vegetables like red pepper. Therefore, the judicious N fertilization following recommended dose is required to suppress $N_2O$ emission with high vegetable productivity in upland soils.

• Journal of Korea Water Resources Association
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• v.42 no.8
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• pp.631-641
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• 2009

Transport of nitrous oxide and treated waste water was investigated in an estuary receiving treated waste water. Seasonal change of water quality were also observed to assure origins of $N_2O$ and to estimate the influence of treated waste water on $N_2O$ production in the survey area. Based on nitrous oxide concentration profiles in the survey area, discharged treated waste water were traced, which flowed upstream at the flood tide and downstream at the ebb tide with concentration maxima. It is assumed that nitrous oxide discharged from treated waste water is transported to the survey area with partial and vertical mixture. To determine the production of $N_2O$ in survey area, flux at each sampling sites were calculated and 25% of the produced $N_2O$ was originated from treated waste water in result. The remaining percentage of the production was also assumed to be the discharge from the sediment layers.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.1-7
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• 2000

The SNOSFET memory devices with ultrathin ONO(tunnel oxide-nitride-blocking oxide) gate dielectric were fabricated using n-well CMOS process and investigated its characteristics. The thicknesses of tunnel oxide, nitride and blocking oxide were $23{\AA},\; 53{\AA}\; and\; 33{\AA}$, respectively. Auger analysis shows that the ONO layer is made up of $SiO_2(upper layer of blocking oxide)/O-rich\; SiO_x\N\_y$. It clearly shows that the converting layer with $SiO_x\N\_y(lower layer of blocking oxide)/N-rich SiO_x\N\_y(nitride)/O-rich SiO_x\N\_y(tunnel oxide)$. It clearly shows that the converting layer with $SiO_x\N\_y$ phase exists near the interface between the blocking oxide and nitride. The programming condition of +8 V, 20 ms, -8 V, 50 ms is determined and data retention over 10 years is obtained. Under the condition of 8 V programming, it was confirmed that the modified Fowler-Nordheim tunneling id dominant charge transport mechanism. The programmed threshold voltage is distributed less than 0.1 V so that the reading error of memory stated can be minimized. An $8\times8$ NAND type flash EEPROM with SONOSFET memory cell was designed and simulated with the extracted SPICE parameters. The sufficient read cell current was obtained and the upper limit of $V_{TH}$ for write state was over 2V.

• Journal of the Korean Magnetics Society
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• v.10 no.4
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• pp.165-170
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• 2000

The purpose of this study is to investigate the effect of annealing conditions on physical and magnetic properties of Fe-Hf-N thin films. When the thin films were annealed in $N_2$ gas, a surface oxide layer, comprised of Fe$_2$O$_3$ and Fe$_3$O$_4$, was formed at the surface of the thin films and a Fe-Hf-O-N layer was also formed under this surface oxide layer. It was found that the thicknesses of the surface oxide layer and the Fe-Hf-O-N layer increased, as the annealing temperature increased. It was also found that if the thickness of the surface oxide layer was excluded in the property calculation, the soft magnetic properties of the annealed thin films were not much different from those of the as-deposited thin films. Therefore, it was suggested that the Fe-Hf-O-N layer formed under the surface oxide layer did not lose significantly the soft magnetic properties of the Fe-Hf-N films and the Fe-Hf-N films annealed in $N_2$gas showed the soft magnetic properties of the Fe-Hf-N and Fe-Hf-O-N multi-layers.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.959-960
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• 2006

Li reacts with $N_2$ at room temperature. In order to activate Li, the mechanical milling of Li with stable metal oxide, namely, $Al_2O_3$ and MgO, using a high energy vibrating ball mill was performed. In the case of Li-MgO system, it reacts with $N_2$, but hardly reacts with $O_2$. The reaction with $N_2$ generally produces $Li_3N$, while for some vigorous reactions the $Mg_3N_2$ is produced as the major phases. In the case of $Li-Al_2O_3$ system, reactivities with both $N_2$ and $O_2$ are high. The difference is explained in terms of the reaction mechanism and the Li state.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.10
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• pp.1-8
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• 1999

In this paper, we have studies the transport mechanism and origin of SILC for the various thickness of wet oxide. Also, SILC characteristics of $N_2O$ annealed oxide was included in this study. We made the flash memory cell with $N_2O$ annealed oxide of 60Athick under $0.25{\mu}m$ design rule, and measured the characteristics of the cell. As a result, we have found that the origin of SILC is due to the trap formed inside of the oxide layer by electrical stress. And we reached the conclusion that the transport mechanism of SILC is ruled by the modified F-N tunneling if the electric field is lower than 8MV/cm or typical F-N tunneling if the electric field is higher than 8MV/cm. We could also confirm the fact that $N_2O$ annealed oxide of 60Athick have an improved resistance effect against SILC. In case that we apply $N_2O$ annealed oxide of 60Athick to the flash memory, we could confirm $10^6$ times endurance and more than 10 years drain disturb, and could get 8V programmable flash memory characteristics.

• Journal of Dental Anesthesia and Pain Medicine
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• v.18 no.2
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• pp.71-78
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• 2018

The first clinical application of nitrous oxide ($N_2O$) was in 1844, by an American dentist named Horace Wells who used it to control pain during tooth extraction. Since then, $N_2O$ has shared a 170-year history with modern dental anesthesia. $N_2O$, an odorless and colorless gas, is very appealing as a sedative owing to its anxiolytic, analgesic, and amnestic properties, rapid onset and recovery, and, in particular, needle-free application. Numerous studies have reported that $N_2O$ can be used safely and effectively as a procedural sedation and analgesia (PSA) agent. However, $N_2O$ can lead to the irreversible inactivation of vitamin B12, which is essential for humans; although rare, this can be fatal in some patients.

• Microbiology and Biotechnology Letters
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• v.47 no.4
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• pp.630-638
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• 2019

Nitrous oxide (N₂O) is a greenhouse gas with a global warming potential 310 times higher than that of carbon dioxide. In this study, an N₂O-reducing consortium was obtained by enrichment culture using advanced treatment sludge as the inoculum. The dominant bacteria in the consortium were Sulfurovum (17.95%), Geobacter (14.63%), Rectinema (11.45%), and Chlorobium (8.24%). The consortium displayed optimal N₂O reducing activity when acetate was supplied as the carbon source at a carbon/nitrogen ratio (mol·mol^-1) of 6.3. The N₂O reduction rate increased with increasing N₂O concentration at less than 3,000 ppm. Kinetic analysis revealed that the maximum N₂O reduction rate of the consortium was 163.9 ㎍-N·g-VSS^-1·h^-1. Genes present in the consortium included nosZ (reduction of nitrous oxide to N₂), narG (reduction of nitrate to nitrite), nirK (reduction of nitrite to nitric oxide), and norB (reduction of nitric oxide to nitrous oxide). These results indicate that the N₂O-reducing consortium is a promising bioresource that can be used in denitrification and N₂O mitigation.