• Journal of the Microelectronics and Packaging Society
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• v.5 no.1
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• pp.31-38
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• 1998

저온소결기판용 Glass-ceramics를 제조하기 위해 LiO2-MgO-MgF2-SiO2계 조성에 서 B2O3첨가가 결정화 특성 및 물성에 미치는 영향을 고찰하였다. 145$0^{\circ}C$에서용융하여 제조 한 모유리의 핵형성 온도와 결정화 온도를 결정하기 위해 TMA와 DTA분석을 실시하였다. 결정화시킨 유리의 결정상과 미세구조를 관찰하기 위하여 XRD와 SEM관찰을 실시하였다. Water swelling을 통해 Glass-ceramics powder를 제조하였으며 제조한 powder의 평균입자 크기는 8.32$\mu$m였다.

• Journal of the Korean Ceramic Society
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• v.38 no.7
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• pp.597-601
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• 2001

The effect of CuO, $B_2$ $O_3$, $V_2$ $O_{5}$ and CuO-B $i_2$ $O_3$additives on microwave dielectric properties of (P $b_{0.45}$C $a_{0.55}$) [(F $e_{0.5}$N $b_{0.5}$)$_{0.9}$S $n_{0.1}$] $O_3$(PCFNS) were investigated. The PCFNS ceramics were sintered at 11$65^{\circ}C$. To decrease the sintering temperature for using as a low-temperature co-firing ceramics (LTCC), CuO, $B_2$ $O_3$, $V_2$ $O_{5}$ and CuO-B $i_2$ $O_3$were added to the PCFNS. As the content of CuO increased, the sintered density and dielectric constant increased and the temperature coefficient of resonance frequency ($\tau$$_{f}$) shifted to the positive value. When the CuO-B $i_2$ $O_3$were added, dielectric properties were $\varepsilon$$_{r}$ of 83, Q. $f_{0}$ of 6085 GHz, and $\tau$$_{f}$ of 8ppm/$^{\circ}C$ at a sintering temperature of 100$0^{\circ}C$. The relationship between the microstructure and properties of ceramics was studied by X-ray diffraction and scanning electron microscopy.icroscopy.y.icroscopy.y.

• Journal of the Korean Ceramic Society
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• v.41 no.8
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• pp.633-636
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• 2004

The sintering behavior, microstructure and microwave dielectric properties of Ca $Ti_{0.5}$F $e_{0.25}$N $b_{0.25}$ $O_3$ with CuO have been investigated. Among the range of additions, 3 wt％ CuO was observed to perform most satisfactory for acting as a sintering aid. The dielectric properties were found to strongly depend on the sintered densities. The dielectric constant increased with sintering temperatures, while the Q${\times}$ $f_{0}$ value affected by second phase. For Ca $Ti_{0.5}$F $e_{0.25}$N $b_{0.25}$ $O_3$ with 3 wt％ CuO sintered at 100$0^{\circ}C$ for 2 h, the dielectric properties with an $\varepsilon$$_{r}$ value of 56, a Q${\times}$ $f_{0}$ value of 3,500 GHz and a $\tau$$_{f}$ value of 10 ppm/$^{\circ}C$ were obtained and suggested for practical applications.cations.ons.ons.ons.

• Journal of the Korean institute of surface engineering
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• v.42 no.6
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• pp.287-293
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• 2009

The passivation films with epoxy layer on LiF, $SiN_x$ and LiF/$SiN_x$ inorganic layer were fabricated on OLED to protect device from the direct damage of $O_2$ and $H_2O$ and to apply for a buffer layer between OLED device and passivation multi-layer with organic/inorganic hybrid structure as to diminish the thermal stress and expansion. Red OLED doped with 1 vol.% Rubrene in $Alq_3$ was used as a basic device. The device structure was multi-layer of ITO(150 nm) / ELM200_HIL(50 nm) / ELM002_HTL(30 nm) / $Alq_3$: 1 vol.% Rubrene(30 nm) / $Alq_3$(30 nm) / LiF(0.7 nm) / Al(100 nm). LiF/epoxy applied as a protective layer didn't contribute to the improvement of life time. While in case of $SiN_x$/epoxy, damage was done in the passivation process because of difference in heat expansion between films which could occur during the formation of epoxy film. Using LiF/$SiN_x$/epoxy improved lifetime significantly without suffering damage in the process of forming films, therefore, the best structure of passivation film with inorganic/epoxy layers was LiF/$SiN_x$/E1.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 1993.06a
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• pp.842-844
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• 1993

We present a F.L.C. (Fuzzy Logic Controller) to control of the oscillation frequency of a V.C.X.O. (Voltage Controled Crystal Oscillator). This F.C.X.O. maintains stable its oscillation frequency inside a range of 1 ppm (one part per millon), with temperature between -55$^{\circ}C$ to＋75$^{\circ}C$.

• Journal of KIISE:Software and Applications
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• v.27 no.1
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• pp.50-61
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• 2000

Recently the stereo vision based on conics has received much attention by many authors. Conics have many features such as their matrix expression, efficient correspondence checking, abundance of conical shapes in real world. Extensions to higher algebraic curves met with limited success. Although irreducible algebraic curves are rather rare in the real world, lines and conics are abundant whose products provide good examples of higher algebraic curves. We consider plane algebraic curves of an arbitrary degree $n{\geq}2$ with a fully calibrated stereo system. We present closed form solutions to both correspondence and reconstruction problems. Let $f_1,\;f_2,\;{\pi}$ be image curves and plane and $VC_P(g)$ the cone with generator (plane) curve g and vertex P. Then the relation $VC_{O1}(f_1)\;=\;VC_{O1}(VC_{O2}(f_2)\;∩\;{\pi})$ gives polynomial equations in the coefficient $d_1,\;d_2,\;d_3$ of the plane ${\pi}$. After some manipulations, we get an extremely simple polynomial equation in a single variable whose unique real positive root plays the key role. It is then followed by evaluating $O(n^2)$ polynomials of a single variable at the root. It is in contrast to the past works which usually involve a simultaneous system of multivariate polynomial equations. We checked our algorithm using synthetic as well as real world images.

• Proceedings of the IEEK Conference
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• 2004.06a
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• pp.163-166
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• 2004

In this paper, we consider the embedding problem of postorder Fibonacci circulants. We show that Fibonacci cubes and Hypercube are a subgraph of postorder Fibonacci circulants. And the postorder Fibonacci circulants of order n can be embedded into the Fibonacci cubes of order n with expansion 1, dilation n-2 and congestion O (n-1), the Hypercube of order n-2 with expansion $\frac{f_n}{2^{n-2}}$, dilation n-2 and congestion O(n-2).

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.627-628
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• 2012

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.383-386
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• 1998

The microwave dielectric properties and sintering properties of the xCaTi $O_{3}$-yMgTi $O_{3}$-z(L $i_{1}$2/N $d_{1}$2/)Ti $O_{3}$ systems were investigated for the development of microwave dielectric materials. Dielectric constants decreased with increasing the amounts of MgTi $O_{3}$ and increased with reducing the amounts of MgTi $O_{3}$ and increased with reducing (L $i_{1}$2/N $d_{1}$2/)Ti $O_{3}$ contents. The microscopic structures were mixed phase with a little second phase. We found some compositions with .tau.$_{f}$ changed from positive to negative value with increasing MgTi $O_{3}$ or (L $i_{1}$2/N $d_{1}$2/)Ti $O_{3}$ contents. The microscopic strucstures were mixed phase with a little second phase. We found some compositions with .tau.$_{f}$ =0ppm/.deg.C. these compmsitions exhibited the stable dielectric properties on the various sintering temperatures.res.

• Advances in materials Research
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• v.3 no.4
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• pp.227-232
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• 2014

$Ce^{4+}$, $Eu^{3+}$, $Tb^{3+}$ co-doped $Ca_3Si_3O_8F_2$ phosphor was synthesized via solid state reaction method using $CaF_2$, $CaCO_3$ and $SiO_2$ as raw materials for the host and $Eu_2O_3$, $CeO_2$, and $Tb_4O_7$ as activators. The luminescent properties of the phosphor was analysed by spectrofluorophotometer at room temperature. The effect of excitation wavelengths on the luminescent properties of the phosphor i.e. under near-ultraviolet (nUV) and visible excitations was investigated. The emission peaks of $Ce^{4+}$, $Eu^{3+}$, $Tb^{3+}$ co-doped $Ca_3Si_3O_8F_2$ phosphor lays at 480(blue band), 550(green band) and 611nm (red band) under 380nm excitation wavelength, attributed to the $Ce^{4+}$ ion, $Tb^{3+}$ ion and $Eu^{3+}$ ions respectively. The results reveal that the phosphor emits white light upon nUV (380nm) / visible (465nm) illumination, and a red light upon 395nm / 535nm illumination. RE ions doped $Ca_3Si_3O_8F_2$ is a promising white light phosphor for LEDs. The emission colours can be seen using Commission international de l'eclairage (CIE) co-ordinates. A single host phosphor emitting different colours under different excitations indicates that it is a potential phosphor having applications in many fields.