• Applied Chemistry for Engineering
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• v.26 no.3
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• pp.306-310
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• 2015

In this research, hematite nanoparticles were synthesized by DC thermal plasma process to increase the overall surface area. The effect of binders on hematite electrodes was investigated by changing the type and composition of binders when preparing electrodes. Nitrogen gas was also added to the DC thermal plasma process in order to dope the hematite with N for enhancing photoelectrochemical properties of hematite nanoparticles. The efficiency of water splitting reaction was measured by linear sweep voltammetry (LSV) under solar simulator. In LSV measurements, the onset potential and maximum current density at a fixed voltage were measured. The durability of electrodes was checked by repeating LSV measurements. CMC (carboxymethyl cellulose) binder with 50 : 1 composition exhibits the highest current density of $12mA/cm^2$ and CMC binder with 20 : 1 composition, showing the initial current density of $3mA/cm^2$, endures 20 times of repetitive LSV measurements. Effects of nitrogen doping on hematite nanoparticles were proven to be insignificant.

• Journal of the Korean Chemical Society
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• v.60 no.6
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• pp.402-409
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• 2016

Thin films of lead sulfide colloidal quantum dots (CQDs) of 2.8 nm in diameter are fabricated and their surfaces are passivated by 3-mercaptopropionic acid (MPA) ligand or hybrid type ($MPA+CdCl_2$) ligand, respectively. The changes in valence band electronic structure and atomic composition of each PbS CQD film upon post-treatment such as air, N2 annealing or UV/Ozone have been studied by photoelectron spectroscopy. The air annealing makes the CQD fermi level to move toward the valence band leading to "p-type doping" regardless of ligand type. The UV/Ozone post-treatment generates $Pb(OH)_2$, $PbSO_x$ and PbO on both CQD surfaces. But the amount of the PbO has been reduced in hybrid type ligand case, especially. That is probably because the extra Pb cations in (111) surface are additionally passivated by $Cl_2$ ligand, which limits the reaction between the Pb cation and ozone.

• Journal of the Korean Chemical Society
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• v.53 no.1
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• pp.42-50
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• 2009

The dielectric-spectroscopic and ac conductivity studies firstly carried out on layered manganese doped Sodium Lithium Trititanates ($Na_{1.9}Li_{0.1}Ti_3O_7$). The dependence of loss tangent (Tan$\delta$), relative permittivity ($\varepsilon_r$) and ac conductivity ($\sigma_{ac}$) in temperature range 373-723K and frequency range 100Hz-1MHz studied on doped derivatives. Various conduction mechanisms are involved during temperature range of study like electronic hopping conduction in lowest temperature region, for MSLT-1 and MSLT-2. The hindered interlayer ionic conduction exists with electronic hopping conduction for MSLT-3. The associated interlayer ionic conduction exists in mid temperature region for all doped derivatives. In highest temperature region modified interlayer ionic conduction along with the polaronic conduction, exist for MSLT-1, MSLT-2, and only modified interlayer ionic conduction for MSLT-3. The loss tangent (Tan$\delta$) in manganese-doped derivatives of layered $Na_{1.9}Li_{0.1}Ti_3O_7$ ceramic may be due to contribution of electric conduction, dipole orientation, and space charge polarization. The corresponding increase in the values of relative permittivity may be due to increase in number of dipoles in the interlayer space while the corresponding decrease in the values of relative permittivity may be due to the increase in the leakage current due to the higher doping.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.11-20
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• 1994

GaAs and AlGaAs epi-layers were grown on semi-insulating (100) GaAs substrate by molecular beam epitaxy (MBE) and their electrical and optical properties have been investigated by several measurements. In undoped GaAs, the p-type GaAs layers with the good surface morphology were obtained under the growth conditions of the substrate temperatures ranging from 570 to $585^{\circ}C$ and the $As_4$/Ga ratios from 17 to 22. In the samples with the growth rates of the ranges of $0.9~1.1 {\mu}m/h$, the impurity concentrations were in the ranges of $1.5{\times}10^{14}~5.6{\times}10^{14}cm^{-3}$ with the Hall mobilities of $590~410cm^2/V-s$. In the Si-doped GaAs, the n-type GaAs layers with low electro trap, only two hole deep levels were observed with uniform doping profiles (<1%). AlGaAs layers with good surface morphology and crystallinity were grown under an optimum condition of the substrate temperature, $600^{\circ}C $. 8 deep level defects were observed between 0.17~0.85eV in undoped AlGaAs layers.

• Applied Chemistry for Engineering
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• v.20 no.4
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• pp.402-406
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• 2009

$TiO_2$ thin films were surface-modified with atmospheric plasma and their photocatalytic activities were evaluated. The films were deposited on glass plates by dip-coating in a $TiO_2$ sol-gel solution and sintered at various temperatures for various times. Nitrogen plasma was used for the modification and the experiments were carried out varying operational parameters such as discharge power and treatment time. Photocatalytic activity was evaluated based on the degradation efficiency of methylene blue (MB) under irradiation of UV-A and fluorescent light. According to XPS analysis, a little amount of nitrogen was found to be doped in the film surface after the modification. As a result, photocatalytic activity increased under irradiation of UV-A and fluorescent light, especially fluorescent light.

• Journal of the Korean Society of Radiology
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• v.4 no.4
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• pp.5-10
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• 2010

The $Ca_2SiO_4$ phosphors doped by La with 0.1 wt%, 0.3 wt%, 0.5 wt%, and 1.0 wt% concentration were prepared by sintering at $1000^{\circ}C$ for 90 minutes in N2 atmosphere. The phosphors were ground in powdered form and were grouped in $100{\mu}m$ size, then the samples had been exposed to low energy X-ray and UV light. The TL glow curves were measured by heating the phosphors at $10^{\circ}C/s$ rate. There was no significantly meaningful correlation between the TL intensity and the doping level. The intensities of the TL peak measured from X-ray irradiated samples doped with 0.1 wt% were relatively strong. The activation energy and the frequency factor were 0.434 ~ 0.516 eV and 0.5 ~ 0.56, respectively. The intensities of the TL peak measured from UV irradiated samples doped with 0.3 wt% were relatively strong. The activation energy and frequency factor were 0.415 ~ 0.477 eV and 0.5 ~ 0.53, respectively. The TL process were found to be the 2nd order for both X-ray and UV irradiation. The TL intensity was increased linearly with the increase of the radiation dose. In summary, the $Ca_2SiO_4 phosphors developed in this study showed good TL characteristics at low energy X-ray and UV light. We believe they will be used as TLDs in near future for personal and environmental radiation detection dosimetry.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.6
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• pp.278-282
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• 2010

The doping effect of thulium on electrical properties and degradation behavior in barium titanate ceramics ($BaTiO_3$) was investigated in terms of generations of core-shell structure and micro-chemical changes through highly accelerated degradation test. The dielectric specimens of pellet type and multi-layered sheets were prepared by using $BaTiO_3$ with undoped and doped with 1 mol% $Tm_2O_3$. The $BaTiO_3$ ceramics doped with 1 mol% $Tm_2O_3$ had 40% higher dielectric constant (${\varepsilon}$ = 2700) than that of the undoped $BaTiO_3$ specimen at curie temperature and met X7R specification. According to the result of highly accelerated degradation test conducted at $150^{\circ}C$, 70 V, and 24 hr, the oxygen diffusion was declined in dielectrics doped with 1 mol% $Tm_2O_3$. The $Tm^{3+}$ ion substituted selectively Ba site and Ti site and contributed to the generation of the core-shell structure. Oxygen vacancies occurred by substitution for Ti site could reduce excess oxygen that reacted to the Ni electrode.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.5
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• pp.69-76
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• 2016

Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current ($I_{peak}$) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage ($V_{th}$) of on/off-FET. In this paper, we have demonstrated the effect of $V_{th}$ adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = $0.465mm^2$) show forward voltage drop ($V_F$) of 1.25 V at $100A/cm^2$ and Ipeak of 290 A and di/dt of $5.8kA/{\mu}s$ at $V_A=800V$. While these characteristics are unaltered by $V_{th}$ adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of $100A/cm^2$ when the $V_{th}$ adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.

• Bulletin of the Korean Chemical Society
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• v.24 no.5
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• pp.559-565
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• 2003

An analytical method the determination of benzo(a)pyrene (BaP) and its hydroxylated metabolites, 1-hydroxybenzo(a)pyrene (1-OHBaP), 3-hydroxybenzo(a)pyrene (3-OHBaP), benzo(a)pyrene-4,5-dihydrodiol (4,5-diolBaP) and benzo(a)pyrene-7,8-dihydrodiol (7,8-diolBaP), in rat urine and plasma has been developed by HPLC/FLD and GC/MS. The derivatization with alkyl iodide was employed to improve the resolution and the detection of two mono hydroxylated metabolites, 1-OHBaP and 3-OHBaP, in LC and GC. BaP and its four metabolites in spiked urine were successfully separated by gradient elution on reverse phase ODS $C_{18}$ column (4.6 mm I.D., 100 mm length, particle size 5 ㎛) using a binary mixture of MeOH/H₂O (85/15, v/v) as mobile phase after ethylation at 90 ℃ for 10 min. The extraction recoveries of BaP and its metabolites in spiked samples with liquid-liquid extraction, which was better than solid phase extraction, were in the range of 90.3- 101.6% in n-hexane for urine and 95.7-106.3% in acetone for plasma, respectively. The calibration curves has shown good linearity with the correlation coefficients (R²) varying from 0.992 to 1.000 for urine and from 0.996 to 1.000 for plasma, respectively. The detection limits of all analytes were obtained in the range of 0.01-0.1 ng/mL for urine and 0.1-0.4 ng/mL for plasma, respectively. The metabolites of BaP were excreted as mono hydroxy and dihydrodiol forms after intraperitoneal injection of 20 mg/kg of BaP to rats. The total amounts of BaP and four metabolites excreted in dosed rat urine were 3.79 ng over the 0-96 hr period from adminstration and the excretional recovery was less than 0.065% of the injection amounts of BaP. The proposed method was successfully applied to the determination of BaP and its hydroxylated metabolites in rat urine and plasma for the pharmacokinetic studies.

• Korean Journal of Materials Research
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• v.19 no.4
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• pp.198-202
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• 2009

For use in ultrasonic actuators, we investigated the structural and piezoelectric properties of $(1\;-\;x)Pb(Zr_{0.515}Ti_{0.485})O_3$ - $xPb(Sb_{1/2}Nb_{1/2})O_3$ + 0.5 wt% $MnO_2$ [(1 - x)PZT - xPSN + $MnO_2$] ceramics with a variation of x (x = 0.02, 0.04, 0.06, 0.08). All the ceramics, which were sintered at $1250^{\circ}C$ for 2 h, showed a typical perovskite structure, implying that they were well synthesized. A homogeneous micro structure was also developed for the specimens, and their average grain size was slightly decreased to $1.3{\mu}m$ by increasing x to 0.8. Moreover, a second phase with a pyrochlore structure appeared when x was above 0.06, which resulted in the deterioration of their piezoelectric properties. However, the 0.96PZT-0.04PSN+$MnO_2$ ceramics, which corresponds with a morphotropic phase boundary (MPB) composition in the (1 - x)PZT - xPSN + $MnO_2$ system, exhibited good piezoelectric properties: a piezoelectric constant ($d_{33}$) of 325 pC/N, an electromechanical coupling factor ($k_p$) of 70.8%, and a mechanical quality factor ($Q_m$) of 1779. The specimens with a relatively high curie temperature ($T_c$) of $305^{\circ}C$ also showed a significantly high dielectric constant (${\varepsilon}_r$) value of 1109. Therefore, the 0.96PZT - 0.04PSN + $MnO_2$ ceramics are suitable for use in ultrasonic vibrators.