• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.591-596
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• 2002

In this work, epitaxial GaN is grown on sapphire substrate in AlGaN/GaN heterostructures. Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as a function of the square root of the oxygen partial Pressure. Oxygen is a shallow donor with a thermal ionization energy of $27\pm2 meV$ measured by temperature dependent Hall effects. A compensation ratio of $\theta$=0.3~0.4 was determined from Hall effect measurements. The formation energy of $O_N$ of $E^F$ =1.3eV determined from the experimental data, is lower than the theoretically predicted vague.

• Journal of Environmental Science International
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• v.17 no.11
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• pp.1195-1201
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• 2008

Enhancing with non-metallic elemental nitrogen(N) is one of several methods that have been proposed to modify the electronic properties of bulk titanium dioxide($TiO_2$), in order to make $TiO_2$ effective under visible-light irradiation. Accordingly, current study evaluated the feasibility of applying visible-light-induced $TiO_2$ enhanced with N element to cleanse aromatic compounds, focusing on xylene isomers at indoor air quality(IAQ) levels. The N-enhanced $TiO_2$ was prepared by applying two popular processes, and they were coated by applying two well-known methods. For three o-, m-, and p-xylene, the two coating methods exhibited different photocatalytic oxidation(PCO) efficiencies. Similarly, the two N-doping processes showed different PCO efficiencies. For all three stream flow rates(SFRs), the degradation efficiencies were similar between o-xylene and m,p-xylene. The degradation efficiencies of all target compounds increased as the SFR decreased. The degradation efficiencies determined via a PCO system with N-enhanced visible-light induced $TiO_2$ was somewhat lower than that with ultraviolet(UV)-light induced unmodified $TiO_2$, which was reported by previous studies. Nevertheless, it is noteworthy that PCO efficiencies increased up to 94% for o-xylene and 97% for the m,p-xylene under lower SFR(0.5 L $min^{-1}$). Consequently, it is suggested that with appropriate SFR conditions, the visible-light-assisted photocatalytic systems could also become important tools for improving IAQ.

• Journal of Environmental Science International
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• v.18 no.11
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• pp.1215-1224
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• 2009

This study evaluated the applicability of visible-light-driven N- and S-doped titanium dioxide($TiO_2$) for the control of low-level dimethyl sulfide(DMS) and dimethyl disulfide(DMDS). In addition, a photocatalytic unit(PU)-adsorption hybrid was evaluated in order to examine the removal of DMS and DMDS which exited the PU and a gaseous photocatalytic byproduct($SO_2$) which was generated during the photocatalytic processes. Fourier-Tranform-Infrared(FTIR) spectrum exhibited different surface characteristics among the three-types of catalysts. For the N- and S-doped $TiO_2$ powders, a shift of the absorbance spectrum towards the visible-light region was observed. The absorption edge for both the N- and S-doped $TiO_2$ was shifted to $\lambda$ 720 nm. The N-doped $TiO_2$ was superior to the S-doped $TiO_2$ in regards to DMS degradation. Under low input concentration(IC) conditions(0.039 and 0.027 ppm for DMS and DMDS, respectively), the N-doped $TiO_2$ revealed a high DMS removal efficiency(above 95%), but a gradual decreasing removal efficiency under high IC conditions(7.8 and 5.4 ppm for DMS and DMDS, respectively). Although the hybrid system exhibited a superior characteristic to PU alone regarding the removal efficiencies of both DMS and DMDS, this capability decreased during the course of a photocatalytic process under the high IC conditions. The present study identified the generation of sulfate ion on the catalyst surface and sulfur dioxide(maximum concentrations of 0.0019 and 0.0074 ppm for the photocatalytic processes of DMS and DMDS, respectively) in effluent gas of PU. However, this generation of $TiO_2$ would be an insignificant addition to indoor air quality levels.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.446-446
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• 2011

One dimensional (1-D) structures of ZnO nanorods are promising elements for future optoelectronic devices. However there are still many obstacles in fabricating high-quality p-type ZnO up to now. In addition, it is limited to measure the degree of the doping concentration and carrier transport of the doped 1-D ZnO with conventional methods such as Hall measurement. Here we demonstrate the measurement of the electronic properties of p- and n-doped ZnO nanorods by the Kelvin probe force microscopy (KPFM). Vertically aligned ZnO nanorods with intrinsic n-doped, As-doped p-type, and p-n junction were grown by vapor phase epitaxy (VPE). Individual nanowires were then transferred onto Au films deposited on Si substrates. The morphology and surface potentials were measured simultaneously by the KPFM. The work function of the individual nanorods was estimated by comparing with that of gold film as a reference, and the doping concentration of each ZnO nanorods was deduced. Our KPFM results show that the average work function difference between the p-type and n-type regions of p-n junction ZnO nanorod is about ~85meV. This value is in good agreement with the difference in the work function between As-doped p- and n-type ZnO nanorods (96meV) measured with the same conditions. This value is smaller than the expected values estimated from the energy band diagram. However it is explained in terms of surface state and surface band bending.

• Korean Journal of Materials Research
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• v.28 no.11
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• pp.640-645
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• 2018

The design of non-precious electrocatalysts with low-cost, good stability, and an improved oxygen reduction reaction(ORR) to replace the platinium-based electrocatalyst is significant for application of fuel cells and metal-air batteries with high energy density. In this study, we synthesize iron-carbide($Fe_3C$) embedded nitrogen(N) doped carbon nanofiber(CNF) as electrocatalysts for ORRs using electrospinning, precursor deposition, and carbonization. To optimize electrochemical performance, we study the three stages according to different amounts of iron precursor. Among them, $Fe_3C$-embedded N doped CNF-1 exhibits the most improved electrochemical performance with a high onset potential of -0.18 V, a high $E_{1/2}$ of -0.29 V, and a nearly four-electron pathway (n = 3.77). In addition, $Fe_3C$-embedded N doped CNF-1 displays exellent long-term stabillity with the lowest ${\Delta}E_{1/2}=8mV$ compared to the other electrocatalysts. The improved electrochemical properties are attributed to synergestic effect of N-doping and well-dispersed iron carbide embedded in CNF. Consequently, $Fe_3C$-embedded N doped CNF is a promising candidate for non-precious electrocatalysts for high-performance ORRs.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.509-514
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• 2020

The two key variables of an Si solar cell, i.e., emitter (n-type window layer) and base (p-type substrate) doping levels or concentrations, are studied using Medici, a 2-dimensional semiconductor device simulation tool. The substrate is p-type and 150 ㎛ thick, the pn junction is 2 ㎛ from the front surface, and the cell is lit on the front surface. The doping concentration ranges from 1 × 10¹⁰ cm^-3 to 1 × 10²⁰ cm^-3 for both emitter and base, resulting in a matrix of 11 by 11 or a total of 121 data points. With respect to increasing donor concentration (Nd) in the emitter, the open-circuit voltage (Voc) is little affected throughout, and the short-circuit current (Isc) is affected only at a very high levels of Nd, exceeding 1 × 10¹⁹ cm^-3, dropping abruptly by about 12%, i.e., from Isc = 6.05 × 10^-9 A·㎛^-1, at Nd = 1 × 10¹⁹ cm^-3 to Isc = 5.35 × 10^-9 A·㎛^-1 at Nd = 1 × 10²⁰ cm^-3, likely due to minority-carrier, or hole, recombination at the very high doping level. With respect to increasing acceptor concentration (Na) in the base, Isc is little affected throughout, but Voc increases steadily, i.e, from Voc = 0.29 V at Na = 1 × 10¹² cm^-3 to 0.69 V at Na = 1 × 10¹⁸ cm^-3. On average, with an order increase in Na, Voc increases by about 0.07 V, likely due to narrowing of the depletion layer and lowering of the carrier recombination at the pn junction. At the maximum output power (Pmax), a peak value of 3.25 × 10^-2 W·cm^-2 or 32.5 mW·cm^-2 is observed at the doping combination of Nd = 1 × 10¹⁹ cm^-3, a level at which Si is degenerate (being metal-like), and Na = 1 × 10¹⁷ cm^-3, and minimum values of near zero are observed at very low levels of Nd ≤ 1 × 10¹³ cm^-3. This wide variation in Pmax, even within a given kind of solar cell, indicates that selecting an optimal combination of donor and acceptor doping concentrations is likely most important in solar cell engineering.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.327-334
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• 2013

Long-wave infrared detectors using the type-II InAs/GaSb strained superlattice (T2SL) material system with the nBn structure were designed and fabricated. The band gap energy of the T2SL material was calculated as a function of the thickness of the InAs and GaSb layers by the Kronig-Penney model. Growth of the barrier material ($Al_{0.2}Ga_{0.8}Sb$) incorporated Te doping to reduce the dark current. The full width at half maximum (FWHM) of the $1^{st}$ satellite superlattice peak from the X-ray diffraction was around 45 arcsec. The cutoff wavelength of the fabricated device was ${\sim}10.2{\mu}m$ (0.12 eV) at 80 K while under an applied bias of -1.4 V. The measured activation energy of the device was ~0.128 eV. The dark current density was shown to be $1.0{\times}10^{-2}A/cm^2$ at 80 K and with a bias -1.5 V. The responsivity was 0.58 A/W at $7.5{\mu}m$ at 80 K and with a bias of -1.5 V.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.4
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• pp.210-218
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• 2000

For the fabrication of $YBa_2Cu_3O_x$ thick film, a substrate of $Y_2BaCuO_5$ was fabricated by adding $CeO_2$ into $Y_2BaCuO_5$ and two types of doping materials added with binder material were prepared. Each doping material was patterned on $Y_2BaCuO_5$substrate by the screen printing method and then was annealed at the temperature with a few step. It could be observed by X-ray diffraction patterns and SEM photographs that through the diffusion process of the $Y_2BaCuO_5$ and each doping material, the $YBa_2Cu_3O_x$ phase was formed. And with n additive of $CeO_2$ the thickness of formed $YBa_2Cu_3O_x$decreased. From the experiment of current limiting on thick film, the sample with thiner thickness of $YBa_2Cu_3O_x$ showed the more effective characteristics of current limiting.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.335-336
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• 2009

저가격 고효율 실리콘 태양전지를 구현하기 위하여 핵심적으로 적용되는 공정인 SOD(Spin on Doping) 확산공정 최적화에 관하여 연구하였다. n-type 도핑 물질로는 인(P509)을 사용하였으며, Spinning 속도와 Spinning 시간을 각 3000 rpm, 30 초로 고정하고 급속 열처리로에서 확산 온도와 확산 시간을 $800\;^{\circ}C\;{\sim}\;950\;^{\circ}C$, 2 분에서 20 분까지 가변하며 확산공정을 실시하였다. 4-Point Probe 장비로 에미터 표면 저항을 측정한 결과 확산 온도 $850\;^{\circ}C$에서 5분간 열처리 하여 확산 공정을 하였을 때 저가의 고효율 실리콘 태양전지를 구현하는데 적용 하기위한 $30\;{\sim}\;50\;{\Omega}$-sq의 에미터 표면 저항을 만족 시키는 $36\;{\Omega}$-sq의 값을 얻을 수 있었다.

• Progress in Superconductivity and Cryogenics
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• v.15 no.2
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• pp.12-15
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• 2013

The pure and carbon (C)-doped $MgB_2$ thin films were fabricated on $Al_2O_3$ (0001) substrates at a temperature of $650^{\circ}C$ by using hot-filament-assisted hybrid physical-chemical vapor deposition technique. The $T_c$ value for pure $MgB_2$ film is 38.5 K, while it is between 30 and 35 K for carbon-doped $MgB_2$ films. Expansion in c-axis lattice parameter was observed with increase in carbon doping concentration which is in contrast to carbon-doped $MgB_2$ single crystals. Significant enhancement in the critical current density was obtained for C-doped $MgB_2$ films as compared to the undoped $MgB_2$ film. This enhancement is most probably due to the incorporation of C into $MgB_2$ and the high density of grain boundaries, both help in the pinning of vortices and result in improved superconducting performance.