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Electrical Characteristics of GaN Epi Layer on Sapphire Substrates for AIGaN/GaN Heterostructures

AIGaN/GaN 이종접합 디바이스를 위한 GaN 에피층의 전기적 특성

  • 문도성 (서울산업대학교 전자정보공학과)
  • Published : 2002.07.01

Abstract

In this work, epitaxial GaN is grown on sapphire substrate in AlGaN/GaN heterostructures. Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as a function of the square root of the oxygen partial Pressure. Oxygen is a shallow donor with a thermal ionization energy of $27\pm2 meV$ measured by temperature dependent Hall effects. A compensation ratio of $\theta$=0.3~0.4 was determined from Hall effect measurements. The formation energy of $O_N$ of $E^F$ =1.3eV determined from the experimental data, is lower than the theoretically predicted vague.

Keywords

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