• Journal of Information Display
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• v.2 no.3
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• pp.1-5
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• 2001

The effect of doping on the energy transfer and charge carrier trapping processes has been studied in organic light-emitting diodes (OLEDs) doped with a fluorescent laser dye. The devices consisted of N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1-biphenyl-4,4'-diamine (TPD) as a hole transporting layer, tris(8-hydroxyquinoline) aluminum ($Alq_3$) as the host, and a fluorescent dye, 4-dicyanomethylene-2-methyl-6-[2-(2,3,6,7-tetrahydro-1 H,5H-benzo[i,j]quinolizin-8-yl) vinyl]-4H-pyran) (DCM2) as the dopant. Temperature dependence of the current-voltage-luminescence (I-V-L) characteristics, the electroluminescence (EL) and photoluminescence (PL) spectra are studied in the temperature ranging between 15 K and 300 K. The emission from DCM2 was seen to be much stronger compared with the emission from $Alq_3$, indicative of efficient energy transfer from $Alq_3$ to DCM2. In addition, the EL emission from DCM2 increasd with increasing temperature while the emission from the host $Alq_3$ decreased. The result indicates that direct charge carrier trapping becomes efficient with increasing temperature. The EL emission from DCM2 shows a slightly sublinear dependence on the current density, implying the enhanced quenching of excitons at high current densities due to the exciton-exciton annihilation.

• Electrical & Electronic Materials
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• v.8 no.4
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• pp.406-412
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• 1995

A n-CdS thin films were evaporated by thermal evaporation method and their structure, optical transmission spectra and electrical characteristics were investigated. The photovoltaic characteristics of solar cells which were fabricated in optimum conditions measured. The evaporated CdS thin films showed in hexagonal structure and above 80% of optical transmission spectra regardless of impurity doping. The high quality thin films could be obtained at 150.deg. C temperature of substrate, which is useful for solar cell window layer with low resistivity of 6*10$\^$-2/(.ohm.-cm) by In doping We measured the electrical and optical characteristics of the n-CdS/p-InP heterojunction solar cells. The most efficient photovoltaic characteristics of heterojunction solar cells had the open circuit voltage of 0.66V, short circuit current density of 13.85mA/cm$\^$2/, fill factor of 0.576 and conversion efficiency of 8.78% under 60mW/cm$\^$2/ illumination.

• Journal of the Korean Institute of Telematics and Electronics
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• v.10 no.3
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• pp.1-9
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• 1973

Gallium phosphide light emitting diode (LED) has been fabricated first time for pilot lamp and numeric display purposes. Bright red light is obtained in forward bias at very low current of one to five mA. A typical p-n junction is formed by liquid phase epitaxial growth on a n-type gallium physphide substrate. The crystal growth is achieved at about 1300$^{\circ}$K after the equilibrium of the gallium solution followed by tipping operation. The ohmic contact is made by wire bonding by thermal compression technique. The entire process is well fit for laboratory scale to fabricate a few hundred diodes for mainly demonstration purpose. For mass production, a large sum of the capital investment is required. The great merit of gallium phosphide LED is at low current operation, and green light emission is also obtainable by nitrogen doping.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.128.2-128.2
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• 2014

Long-wave infrared detectors using the type-II InAs/GaSb strained superlattice (T2SL) material system with the nBn structure were designed and fabricated. The band gap energy of the T2SL material was calculated as a function of the thickness of the InAs and GaSb layers by the Kronig-Penney model. Growth of the barrier material (Al0.2Ga0.8Sb) incorporated Te doping to reduce the dark current. The full width at half maximum (FWHM) of the 1st satellite superlattice peak from the X-ray diffraction was around 45 arc sec. The cutoff wavelength of the fabricated device was ${\sim}10.2{\mu}m$ (0.12eV) at 80 K while under an applied bias of -1.4V. The measured activation energy of the device was ~0.128 eV. The dark current density was shown to be $1.2{\times}10^{-5}A/cm^2$ at 80 K and with a bias -1.4 V. The responsivity was 1.9 A/W at $7.5{\mu}m$ at 80K and with a bias of -1.9V.

• Journal of the Korean Applied Science and Technology
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• v.19 no.2
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• pp.97-102
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• 2002

Recently, the phosphorescent organic light-emitting devices (OLEDs) have been extensively studied for their high internal quantum efficiency. In this study, we synthesised several phosphorescent metal complexes, and certified their composition using NMR. We also investigated the characteristics of the phosphorescent OLEDs with the green emitting phosphor, $Ir(ppy)_{3}$. The devices with a structure of indium-tin-oxide(ITO)/N,N'-diphenyl-N,N'-(3-methylphenyI}-1,1'-biphenyl-4,4'-diamine (TPD)/metal complex doped in host materials/2,9-dimethyl-4,7-diphenyl-l,10-phenanthroline(BCP)/tris (8-hydroxyquinolinato) Aluminum($Alq_{3}$)/Li:Al/Al was fabricated, and its electrical and optical characteristics were studied. By changing the doping concentration of tris(2-phenylpyridine)iridium ($Ir(ppy)_{3}$), we fabricated several devices and investigated their characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.441-448
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• 2002

The electrical properties of the GaN-based green light emitting diodes(LEDs) with the Mg-doped p-GaN layer activated in $N_2$ or $O_2$ ambient have been compared. For the $N_2$ -ambient activation the current-voltage behavior of LEDs has been found to be improved when the Mg dopants activation was performed in the higher temperature. However, for the $O_2$-ambient activation the current-voltage characteristic has been observed to be enhanced when the Mg dopants activation was carried out in the lower temperature. The minimum forward voltage at 20mA was obtained to be 4.8 V for LEDs with the p-GaN layer activated at $900^{\circ}C$ in the $N_2$ ambient and 4.5V for LEDs with the p-GaN layer treated at $700^{\circ}C$ in the $O_2$ambient, repectively. The forward voltage reduction of the LEDs treated in the $O_2$-ambient may be related to the oxygen co-doping of the p-GaN layer during the activation process. The $O_2$ -ambient activation process is useful for the enhancement of the LED performance as well as the fabrication process since this process can activate the Mg dopants in the low temperature.

• Nuclear Engineering and Technology
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• v.54 no.6
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• pp.2253-2261
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• 2022

In this study, nano-scaled shielding materials were assembled and fabricated by doping different weight percentages of Nano-mercuric oxide (N-HgO) into Nano-Bentonite (N-Bent) based on using (100-x% N-Bent + x% N-HgO, x = 10, 20, 30, and 40 wt %). The fabricated N-HgO/N-Bent nanocomposites were characterized by FT-IR, XRD, and SEM and evaluated to evaluate their shielding properties toward gamma radiation by using four different γ-ray energies form three point sources; 356 keV from ¹³³Ba, 662 keV from ¹³⁷Cs as well as 1173, and 1332 keV from ⁶⁰Co. The γ-rays mass attenuation coefficients were plotted as a function of the doped N-HgO concentrations into N-HgO/N-Bent nanocomposites. The computed values of mass attenuation coefficients (µ_m), effective atomic number (Z_eff) and electron density (N_el) by the as-prepared samples were found to increase, while the half value layer (HVL) and mean free path (MFP) were identified to decrease upon increasing the N-HgO contents. It was concluded also that the increase in N-HgO concentration led to a direct increase in the mass attenuation coefficient from 0.10 to 0.17 cm²/g at 356 keV and from 0.08 to 0.09 cm²/g at 662 keV. However, a slight increase was observed in the identified mass attenuation coefficients at (1172 and 1332 keV).

• Journal of the Korean Magnetics Society
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• v.16 no.3
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• pp.168-172
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• 2006

We studied the magnetic and the related electronic properties of Ni-doped rutile $TiO_{2-{\delta}}$ films (including oxygen deficiency $\delta$) prepared using a sol-gel method. A room-temperature ferromagnetism was observed in the $TiO_{2-{\delta}}$ : Ni films with the saturation magnetization ($M_S$) decreasing with increasing Ni doping and remaining constant above 6 at% Ni doping. The observed ferromagnetism below 6 at% Ni doping is interpreted as due to magnetic polaron formed by a trapped electron in oxygen vacancy and magnetic impurity ions around it. For small Ni doping, $M_S$ up to $3.7{\mu}B/Ni$ was obtained. The ferromagnetism for Ni doping above 6 at% is interpreted as due to the existence of Ni clusters that can explain the p-n conductivity transition observed by Hall effect measurements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.35-36
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• 2009

In this work, we demonstrate 800V 4H-SiC power DMOSFETs with several structural alterations to obtain a low threshold voltage ($V_{TH}$) and a high figure of merit ($V_B^2/R_{SP,ON}$). To optimize the device performance, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. These parameters are optimized using 2D numerical simulation and the 4H-SiC DMOSFET structure results in a threshold voltage ($V_{TH}$) below ~3.8V, and high figure of merit ($V_B^2/R_{SP,ON}$>${\sim}200MW/cm^2$) for a power MOSFET in $V_B$-800V range.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.40-45
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• 2016

Recently, $Bi_2Te_3$-based alloys are the best thermoelectric materials near to room temperature, so it has been researched to achieve increased figure of merit(ZT). Ternary compounds such as Bi-Te-Se and Bi-Sb-Te have higher thermoelectric property than binary compound Bi-Te and Sb-Te, respectively. Compared to DC plating method, pulsed electrodeposition is able to control parameters including average current density, and on/off pulse time etc. Thereby the morphology and properties of the films can be improved. In this study, we electrodeposited n-type ternary Cu-doped $Bi_2(Te-Se)_3$ thin film by modified pulse technique at room temperature. To further enhance thermoelectric properties of $Bi_2(Te-Se)_3$ thin film, we optimized Cu doping concentration in $Bi_2(Te-Se)_3$ thin film and correlated it to electrical and thermoelectric properties. Thus, the crystal, electrical, and thermoelectric properties of electrodeposited $Bi_2(Te-Se)_3$ thin film were characterized the XRD, SEM, EDS, Seebeck measurement, and Hall effect measurement, respectively. As a result, the thermoelectric properties of Cu-doped $Bi_2(Te-Se)_3$ thin films were observed that the Seebeck coefficient is $-101.2{\mu}V/K$ and the power factor is $1412.6{\mu}W/mK^2$ at 10 mg of Cu weight. The power factor of Cu-doped $Bi_2(Te-Se)_3$ thin film is 1.4 times higher than undoped $Bi_2(Te-Se)_3$ thin film.