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Molecular detection of bat coronaviruses in three bat species in Indonesia

  • Dharmayanti, Ni Luh Putu Indi;Nurjanah, Diana;Nuradji, Harimurti;Maryanto, Ibnu;Exploitasia, Indra;Indriani, Risa
    • Journal of Veterinary Science
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    • v.22 no.6
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    • pp.70.1-70.12
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    • 2021
  • Bats are an important reservoir of several zoonotic diseases. However, the circulation of bat coronaviruses (BatCoV) in live animal markets in Indonesia has not been reported. Genetic characterization of BatCoV was performed by sequencing partial RdRp genes. Real-time polymerase chain reaction based on nucleocapsid protein (N) gene and Enzyme-linked immunosorbent assay against the N protein were conducted to detect the presence of severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) viral RNA and antibody, respectively. We identified the presence of BatCoV on Cynopterus brachyotis, Macroglossus minimus, and Rousettus amplexicaudatus. The results showed that the BatCoV included in this study are from an unclassified coronavirus group. Notably, SARS-CoV-2 viral RNA and antibodies were not detected in the sampled bats.

SARS-CoV-2 Antibody Neutralization Assay Platforms Based on Epitopes Sources: Live Virus, Pseudovirus, and Recombinant S Glycoprotein RBD

  • Endah Puji Septisetyani;Pekik Wiji Prasetyaningrum;Khairul Anam;Adi Santoso
    • IMMUNE NETWORK
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    • v.21 no.6
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    • pp.39.1-39.18
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    • 2021
  • The high virulent severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) virus that emerged in China at the end of 2019 has generated novel coronavirus disease, coronavirus disease 2019 (COVID-19), causing a pandemic worldwide. Every country has made great efforts to struggle against SARS-CoV-2 infection, including massive vaccination, immunological patients' surveillance, and the utilization of convalescence plasma for COVID-19 therapy. These efforts are associated with the attempts to increase the titers of SARS-CoV-2 neutralizing Abs (nAbs) generated either after infection or vaccination that represent the body's immune status. As there is no standard therapy for COVID-19 yet, virus eradication will mainly depend on these nAbs contents in the body. Therefore, serological nAbs neutralization assays become a requirement for researchers and clinicians to measure nAbs titers. Different platforms have been developed to evaluate nAbs titers utilizing various epitopes sources, including neutralization assays based on the live virus, pseudovirus, and neutralization assays utilizing recombinant SARS-CoV-2 S glycoprotein receptor binding site, receptor-binding domain. As a standard neutralization assay, the plaque reduction neutralization test (PRNT) requires isolation and propagation of live pathogenic SARS-CoV-2 virus conducted in a BSL-3 containment. Hence, other surrogate neutralization assays relevant to the PRNT play important alternatives that offer better safety besides facilitating high throughput analyses. This review discusses the current neutralization assay platforms used to evaluate nAbs, their techniques, advantages, and limitations.

Cleavage-Dependent Activation of ATP-Dependent Protease HslUV from Staphylococcus aureus

  • Jeong, Soyeon;Ahn, Jinsook;Kwon, Ae-Ran;Ha, Nam-Chul
    • Molecules and Cells
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    • v.43 no.8
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    • pp.694-704
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    • 2020
  • HslUV is a bacterial heat shock protein complex consisting of the AAA+ ATPase component HslU and the protease component HslV. HslV is a threonine (Thr) protease employing the N-terminal Thr residue in the mature protein as the catalytic residue. To date, HslUV from Gram-negative bacteria has been extensively studied. However, the mechanisms of action and activation of HslUV from Gram-positive bacteria, which have an additional N-terminal sequence before the catalytic Thr residue, remain to be revealed. In this study, we determined the crystal structures of HslV from the Gram-positive bacterium Staphylococcus aureus with and without HslU in the crystallization conditions. The structural comparison suggested that a structural transition to the symmetric form of HslV was triggered by ATP-bound HslU. More importantly, the additional N-terminal sequence was cleaved in the presence of HslU and ATP, exposing the Thr9 residue at the N-terminus and activating the ATP-dependent protease activity. Further biochemical studies demonstrated that the exposed N-terminal Thr residue is critical for catalysis with binding to the symmetric HslU hexamer. Since eukaryotic proteasomes have a similar additional N-terminal sequence, our results will improve our understanding of the common molecular mechanisms for the activation of proteasomes.

The Mg Solid Solution far the P-type Activation of GaN Thin Films Grown by Metal-Organic Chemical Vapor Deposition

  • Kim, KeungJoo;Chung, SangJo
    • Transactions on Electrical and Electronic Materials
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    • v.2 no.4
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    • pp.24-29
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    • 2001
  • GaN films were grown for various Mg doping concentrations in metal-organic chemical vapor deposition. Below the Mg concentration of 10$^{19}$ ㎤, the thermally annealed sample shows the compensated phase to n-type GaN in Hall measurement. In the MB concentration of 4$\times$10$^{19}$ ㎤ corresponding to the hole carrier concentration of 2.6$\times$1$^{19}$ ㎤ there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the $V_{Ga}$ and for an acceptor of $Mg_{Ga}$ . The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photocurrent signal of 3.02-3.31 eV. Above the Mg concentration of 4$\times$10$^{19}$ ㎤, both the Mg doping level and Mg concentration were saturated and there Is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band.

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The effects of growth temperatures and V/III ratios at 1000℃ for a-plane GaN epi-layer on r-plane sapphire grown by HVPE (r면 사파이어 위에 HVPE로 성장된 a면 GaN 에피층의 성장온도 효과 및 1000℃에서의 V/III족 비의 효과)

  • Ha, Ju-Hyung;Park, Mi-Seon;Lee, Won-Jae;Choi, Young-Jun;Lee, Hae-Yong
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.25 no.2
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    • pp.56-61
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    • 2015
  • The effects of the growth temperature on the properties of a-plane GaN epi-layer on r-plane sapphire by HVPE were studied, when the constant V/III ratio and the flow rate of HCl for the Ga source channel was fixed at 10 and 700 sccm, respectively. Additionally the effects of V/III ratios for source gasses were studied when growth temperature and the flow rate of HCl for the Ga source channel was fixed at $1000^{\circ}C$ and 700 sccm, respectively. As the growth temperature was increased, the values of Full Width Half Maximum (FWHM) for Rocking curve (RC) of a-plane GaN (11-20) epi-layer were decreased and thickness of a-plane GaN epi-layer were increased. As V/III ratios were increased at $1000^{\circ}C$, the values of FWHM for RC of a-plane GaN (11-20) were declined and thickness of a-plane GaN epi-layer were increased. The a-plane GaN (11-20) epi-layer grown at $1000^{\circ}C$ and V/III ratio = 10 showed the lowest value FWHM for RC of a-plane GaN (11-20) for 734 arcsec and the smallest dependence of Azimuth angle for FWHM of (11-20) RCs.

Carrier Transport of Quantum Dot LED with Low-Work Function PEIE Polymer

  • Lee, Kyu Seung;Son, Dong Ick;Son, Suyeon;Shin, Dong Heon;Bae, Sukang;Choi, Won Kook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.432.2-432.2
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    • 2014
  • Recently, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED)[1]. In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[2] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QD LED, two kinds of hybrid organic materials, [poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo)(F8BT) + poly(N,N'-bis (4-butylphenyl)-N,N'-bis(phenyl)benzidine (poly-TPD)] and [4,4'-N,N'-dicarbazole-biphenyl (CBP) + poly-TPD], were adopted as hole transport layer having high highest occupied molecular orbital (HOMO) level for improving hole transport ability. At a low-operating voltage of 8 V, the device emits orange and red spectral radiation with high brightness up to 2450 and 1420 cd/m2, and luminance efficacy of 1.4 cd/A and 0.89 cd/A, respectively, at 7 V applied bias. Also, the carrier transport mechanisms for the QD LEDs are described by using several models to fit the experimental I-V data.

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nBn Based InAs/GaSb Type II Superlattice Detectors with an N-type Barrier Doping for the Long Wave Infrared Detection (InAs/GaSb 제2형 응력 초격자 nBn 장적외선 검출소자 설계, 제작 및 특성평가)

  • Kim, Ha Sul;Lee, Hun;Klein, Brianna;Gautam, Nutan;Plis, Elena A.;Myers, Stephen;Krishna, Sanjay
    • Journal of the Korean Vacuum Society
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    • v.22 no.6
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    • pp.327-334
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    • 2013
  • Long-wave infrared detectors using the type-II InAs/GaSb strained superlattice (T2SL) material system with the nBn structure were designed and fabricated. The band gap energy of the T2SL material was calculated as a function of the thickness of the InAs and GaSb layers by the Kronig-Penney model. Growth of the barrier material ($Al_{0.2}Ga_{0.8}Sb$) incorporated Te doping to reduce the dark current. The full width at half maximum (FWHM) of the $1^{st}$ satellite superlattice peak from the X-ray diffraction was around 45 arcsec. The cutoff wavelength of the fabricated device was ${\sim}10.2{\mu}m$ (0.12 eV) at 80 K while under an applied bias of -1.4 V. The measured activation energy of the device was ~0.128 eV. The dark current density was shown to be $1.0{\times}10^{-2}A/cm^2$ at 80 K and with a bias -1.5 V. The responsivity was 0.58 A/W at $7.5{\mu}m$ at 80 K and with a bias of -1.5 V.

Formation Mechanism of a Large Schottky Barrier Height for Cr-AlGaN/GaN Heterostructure (Cr/n-AlGaN/GaN Schottky Contact에서 높은 쇼트키 장벽 형성 메카니즘에 관한 연구)

  • Nam, Hyo-Duk;Lee, Yeung-Min;Jang, Ja-Soon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.4
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    • pp.266-270
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    • 2011
  • We report on the formation mechanism of large Schottky barrier height (SBH) of nonalloyed Cr Schottky contacts on strained Al0.25Ga0.75N/GaN. Based on the current-voltage (I-V) and capacitance-voltage (C-V) data, the SBHs are determined to be 1.98 (${\pm}0.02$) and 2.07 (${\pm}0.02$) eV from the thermionic field emission and two-dimensional electron gas (2DEG) calculations, respectively. Possible formation mechanism of large SBH will be described in terms of the formation of Cr-O chemical bonding at the interface between Cr and AlGaN/GaN, low binding-energy shift to surface Fermi level, and the reduction of 2DEG electrons.

Two new relationships for slip velocity and characteristic velocity in a non-center rotating column

  • Torkaman, Rezvan;Heydari, Mehran;Cheshmeh, Javad Najafi;Heydari, Ali;Asadollahzadeh, Mehdi
    • Nuclear Engineering and Technology
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    • v.54 no.8
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    • pp.2809-2818
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    • 2022
  • In this investigation work, liquid-liquid extraction (L.L.E) through three distinctive frameworks have been examined for assurance of slip velocity (S.V), and characteristic velocity (C.V) in a non-center rotating column (N.C.R.C) with a wide extend of factors. Three double frameworks with distinctive interfacial tension comprising of toluene-water (high interfacial tension), n-butyl acetate-water (medium interfacial tension), and n-butanol-water (low interfacial tension) were investigated for tests. Two common relationships for the expectation of S.V and C.V, including phase stream rates, rotor speed, column geometry additionally physical properties, are displayed. The recommended relationships were compared with test information gotten from the writing and the display examination. Findings of this study, the present proposed correlations are more accurate than those previously reported.