• 한국표면공학회지
• /
• 제44권3호
• /
• pp.95-104
• /
• 2011

Ti based nanocomposite films including V, Si and Nb (Ti-Me-N, Me=V, Si and Nb) were fabricated by hybrid physical vapor deposition (PVD) method consisting of unbalanced magnetron (UBM) sputtering and arc ion plating (AIP). The pure Ti target was used for arc ion plating and other metal targets (V, Si and Nb) were used for sputtering process at a gas mixture of Ar/$N_2$ atmosphere. Mostly all of the films were grown with textured TiN (111) plane except the Si doped Ti-Si-N film which has strong (200) peak. The microhardness of each film was measured using the nanoindentation method. The minimum value of removal rate ($0.5{\times}10^{-15}\;m^2/N$) was found at Nb doped Ti-Nb-N film which was composed of Ti-N and Nb-N nanoparticles with small amount of amorphous phases.

• Biotechnology and Bioprocess Engineering:BBE
• /
• 제9권1호
• /
• pp.47-51
• /
• 2004

Ceramide III was prepared by the cultivation of Saccharomyces cerevisiae. Ceramide III was partitioned from the cell extracts by solvent extraction and analyzed by Normal Phase High Performance Liquid Chromatography (NP-HPLC) using Evaporative Light Scattering Detector (ELSD). We experimentally determined the mobile phase composition to separate ceramide III with NP-HPLC. Three binary mobile phases of n-hexane/ethanol, n-hexane/lsoprophyl Alcohol(IPA) and n-hexane/n-butanol and one ternary mobile phase of n-hexane/IPA/methanol were demonstrated. For the binary mobile phase of n-hexane/ethanol, the first mobile phase composition, 95/5(v/v), was step-increased to 72/23(v/v) at 3 min. In the binary mobile phase, the retention time of ceramide III was 7.87min, while it was 4.11 min respectively in the ternary system, where the mobile phase composition of n-hexane/IPA/methanol, 85/7/8(v/v/v), was step-increased to 75/10/15(v/v/v) at 3 min. However, in the ternary mobile phase, the more peak area of ceramide III was observed.

• 전력전자학회논문지
• /
• 제24권3호
• /
• pp.201-206
• /
• 2019

This study presents the design and experimental result of a GaN-based DC-DC converter with an integrated gate driver. The GaN device is attractive to power electronic applications due to its superior device performance. However, the switching loss of a GaN-based power converter is susceptible to the common source inductance, and converter efficiency is severely degraded with a large loop inductance. The objective of this study is to achieve high-efficiency power conversion and the highest power density using a multiphase integrated half-bridge GaN solution with minimized loop inductance. Before designing the converter, several GaN and Si devices were compared and loss analysis was conducted. Moreover, the impact of common source inductance from layout parasitic inductance was carefully investigated. Experimental test was conducted in buck mode operation at 48 -12 V, and results showed a peak efficiency of 97.8%.

• Journal of Information Display
• /
• 제12권1호
• /
• pp.1-4
• /
• 2011

A complementary inverter was fabricated using pentacene and N-N -dioctyl-3,4,9,10-perylene tetracarboxylic diimide-C (PTCDI-C8) for p- and n-type transistors on a poly(ether sulfone) substrate, respectively. The mobilities of the p- and n-type transistors were 0.056 and 0.013 $cm^2$/Vs, respectively. The inverter, which was composed of p- and n-type transistors, showed a gain of 48.6 when $V_{DD}$ = -40V and at the maximum noise margin of $V_{DD}$/2. A ring oscillator was also fabricated by cascading five inverters. The five-stage ring oscillator showed the maximum output frequency of 10 kHz when $V_{DD}$ = -170 V.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
• /
• pp.154.1-154.1
• /
• 2007

• Journal of Microbiology and Biotechnology
• /
• 제22권2호
• /
• pp.234-238
• /
• 2012

Recombinant Escherichia coli displaying organophosphorus hydrolase (OPH) was used to overcome the diffusion barrier limitation of organophosphorus pesticides. A new anchor system derived from the N-terminal domain of ice-nucleation protein from Pseudomonas syringae InaV (InaV-N) was used to display OPH onto the surface. The designed sequence was cloned in the vector pET-28a(+) and then was expressed in E. coli. Tracing of the expression location of the recombinant protein using SDS-PAGE showed the presentation of OPH by InaV-N on the outer membrane, and the ability of recombinant E. coli to utilize diazinon as the sole source of energy, without growth inhibition, indicated its significant activity. The location of OPH was detected by comparing the activity of the outer membrane fraction with the inner membrane and cytoplasm fractions. Studies revealed that recombinant E. coli can degrade 50% of 2 mM chlorpyrifos in 2 min. It can be concluded that InaV-N can be used efficiently to display foreign functional protein, and these results highlight the high potential of an engineered bacterium to be used in bioremediation of pesticide-contaminated sources in the environment.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2011년도 제42회 하계학술대회
• /
• pp.1418-1419
• /
• 2011

차세대 전력 반도체인 고전압 GaN 쇼트키 장벽 다이오드의 역방향 특성을 개선하기 위해서 열 산화공정이 제안되었다. AlGaN/GaN 에피탁시 위에 쇼트키 장벽 다이오드 구조가 제작되었으며, 쇼트키 컨택은 증착 후 $450^{\circ}C$에서 산화되었다. 열 산화공정이 메사 측벽의 AlGaN 및 GaN 표면에 $AlO_x$ 및 $GaO_x$를 형성하여 표면으로 흐르는 누설전류를 억제한다. 표면 및 GaN 버퍼를 통한 누설전류는 열 산화 공정 이후 100 ${\mu}m$-너비당 51.3 nA에서 24.9 pA로 1/2000 배 수준으로 감소하였다. 표면 산화물 형성으로 인하여 생성된 Ga-vacancy와 Al-vacancy는 acceptor로 동작하여 surface band bending을 증가시켜 쇼트키 장벽 높이를 증가시킨다. 애노드-캐소드 간격이 5 ${\mu}m$인 제작된 소자는 0.99 eV의 높은 쇼트키 장벽 높이를 획득하여, -100 V에서 0.002 A/$cm^2$의 낮은 누설전류를 확보하였다. 애노드-캐소드 간격이 5에서 10, 20, 50 ${\mu}m$로 증가되면 소자의 항복전압은 348 V에서 396, 606, 941 V로 증가되었다. 열 산화공정은 전력용 GaN 전자소자의 누설전류감소와 항복전압 증가를 위한 후처리 공정으로 적합하다.

• 전기전자학회논문지
• /
• 제25권3호
• /
• pp.511-516
• /
• 2021

AlGaN/GaN 반도체 위에 금속이 접합된 HEMT와 SiO₂와 NiO를 게이트 층간막으로 갖는 MOSHFET를 제작하고 NiO 박막에 따른 효과와 특성변화의 원인을 연구하였다. HEMT 구조에서 보인 -3.79 V의 문턱전압은 SiO₂를 층간막으로 했을 때 - 5.52 V로 -1.73 V의 음방향 변화를, NiO를 층간막으로 했을 때 -2.76 V로 +1.03 V의 양방향 변화를 나타냈다. 또 NiO MOSFET의 경우 선형성이 증가하여 넓은 범위에 걸쳐 균일한 트랜스컨덕턴스 특성을 나타냈으며 0 V 이상의 게이트 전압에서는 HEMT와 SiO₂ MOSHFET보다 더 높은 값을 보였다. 게이트에 입력된 펄스신호가 -5 V~0 V로 스윙할 때 HEMT의 포화 드레인 전류는 0.1 Hz~10 Hz의 주파수에서 20%의 감소를 보인 뒤 그 값을 유지하였으나, NiO MOSHFET은 10 Hz에서부터 지속적으로 감소하여 서로 다른 응답특성을 보였다.

• 한국결정성장학회지
• /
• 제24권3호
• /
• pp.89-93
• /
• 2014

V/III족 ratio의 변화에 따른 r-plane의 sapphire 위에 HVPE로 성장한 a-plane GaN 에피텍셜층의 특성변화를 연구하였다. V/III족 ratio가 증가함에 따라서, a-plane (11-20) GaN에 대한 Rocking Curve의 FWHM의 값이 감소하며, 성장된 GaN의 표면 거칠기도 감소하고, 성장성도는 증가하다가 V/III족 ratio 7까지는 증가하다가 다시 감소하는 경향을 보여준다. 즉 V/III족 ratio 10에서 a-plane (11-20) GaN에 대한 Rocking Curve의 FWHM의 가장 작은 829 arcsec값을 보이고, 표면거칠기도 가장 작은 1.58 nm 값을 보인다. 또한 광학현미경상에서 관찰되는 내부 Crack 또는 void가 가장 적게 발생하였다. 그리고 M모양의 Azimuth angle 의존도를 전 샘플에서 보이며, V/III족 ratio 10에서 FWHM 최대값과 최소값의 편차값이 439 arcscec로 가장 작은 차이를 보였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.315-315
• /
• 2013

We report the electronic structure modification in the swift heavy ion (SHI) irradiated N-doped ZnO thin films prepared by RF sputtering from ZnO target in different ratio of Ar/$N_2$ gas mixture using highly pure $N_2$ gas. The different N-ZnO thin lms were then irradiated with 120 MeV Ag ion beam with different doses ranging from $1{\times}10^{11}$ to $5{\times}10^{12}$ ions/$cm^2$ and characterized by XRD and near edge X-ray absorption ne structure (NEXAFS) at N and O K-edges. The NEXAFS measurements provide direct evidence of O 2p and Zn 3d orbital hybridization and also the bonding of N ions with Zn and O ions. The minimum value of resistivity of $790{\Omega}cm$, a Hall mobility of $22cm^2V^-1s^-1$ and the carrier concentration of $3.6{\times}10^{14}cm^{-3}$ were yielded at 75% $N_2$. X-ray diffraction (XRD) measurements revealed that N-doped ZnO films had the preferential orientation of (002) plane for all samples, while crystallinity start decreasing at 32.5% $N_2$. The average crystallite size varies from 5.7 to 8.2 nm for 75% and then decreases to 7.8 nm for 80% $Ar:N_2$ ratio.