• 제목/요약/키워드: N-IR

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크로마토그래피용 고정화 8-hydroxyquinoline의 제조 및 특성분석 (Preparation and characterization of immobilized 8-hydroxyquinoline for chromatographic application)

  • 김범수
    • 분석과학
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    • 제13권1호
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    • pp.49-54
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    • 2000
  • 5단계 반응을 통하여 실리카겔의 8-hydroxyquinoline 유도체를 제조하였으며, 각 단계에서 얻은 생성물들을 IR과 NMR을 이용하여 분석하였다. 실리카겔 자체에 관한 IR 스펙트럼으로부터, 자유 hydroxyl기와 수소 결합된 hydroxyl기가 존재하는 것을 확인할 수 있었다. 첫 단계 반응에서는 N-H와 C-H의 IR 밴드와 APTS기에 있는 메틸렌 탄소의 NMR peak을 확인하였다. 둘째 단계에서는 카보닐, nitro, 방향족 탄소의 IR 밴드와 지방족, 방향족, 카보닐 탄소의 NMR peak을 관찰하였으며, 셋째 단계에서 $NO_2$$NH_2$로 환원되는 것을 IR과 NMR로 확인할 수 있었다. 마지막 단계에서는 4번째 단계에서 생성된 $N{\equiv}N$ IR peak이 사라지는 것으로부터 8-quinolinol이 고정화되는 것을 확인할 수 있었다.

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9-Arylated Carbazole을 주리간드로 사용하는 Heteroleptic Iridium(III) 착물의 합성과 분광학적 특성 (Synthesis and Photoluminescence Properties of Heteroleptic 9-Arylated Carbazole Iridium(III) Complexes)

  • 오세환;염을균;김영훈;임영재;허정석;김영준
    • 공업화학
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    • 제32권2호
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    • pp.180-189
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    • 2021
  • Cu(I) 촉매를 사용하여 열반응을 이용한 N-heteroaryl carbazole을 합성하였고 이를 새로운 heteroleptic Ir(III) 착물 합성을 위한 주리간드로 사용하였다. 새로운 Ir(III) 착물은 일반적인 Ir(III) 착물이 가지는 5각 고리가 아닌 6각 고리를 주리간드와 Ir 금속 결합 사이에서 형성하는 것으로 X-ray 단결정구조를 통해 확인할 수 있었다. 합성한 Ir(III) 착물들은 좋은 인광 특성을 나타내므로 OLED 발광층 재료물질로의 가능성을 보여주었다. 주리간드와 보조리간드 변화에 따른 분광학적 특성을 고찰하였는데 PL 최대 발광 파장(λmax) 변화는 보조리간드가 Ir 금속과 더 강한 결합을 만들수록 단파장 쪽으로 이동하는 것을 발견하였다. 또한, 주리간드에 대해서는 Ir-N 결합을 만드는 헤테로아릴 그룹의 아로마틱고리 전자밀도가 커질수록 단파장 쪽으로 이동하는 경향이 있는 것을 알 수 있었다.

$N_2O$ 단일 추진제 추력기 개발을 위한 촉매 분해 시험 (Catalytic decomposition of $N_2O$ to develop monopropellant thruster)

  • 진정근;;안성용;권세진
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2009년도 제33회 추계학술대회논문집
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    • pp.269-272
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    • 2009
  • 친환경 추진제인 $N_2O$ 단일추진제 추력기 개발을 위하여 $N_2O$ 촉매 분해 시험을 수행하였다. 백금(Pt), 이리듐(Ir)을 알루미나 펠렛에 코팅한 촉매를 삽입하여 압력을 달리하고 분해 반응이 시작되는 최저 예열 온도를 측정하였다. 실험 결과 Ir이 $N_2O$ 분해 반응에 더 적합하며 최저 요구 예열 온도도 낮게 나타났다. 또한 요구 예열 온도는 챔버 압력이 증가함에 따라 감소하였다. 그러나 지속적인 분해 반응시험을 통해 Ir의 산화 반응에 의한 반응성 저하 현상이 나타남을 실험적으로 확인하였다.

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Impact of Insulin Resistance on Acetylcholine-Induced Coronary Artery Spasm in Non-Diabetic Patients

  • Kang, Kwan Woo;Choi, Byoung Geol;Rha, Seung-Woon
    • Yonsei Medical Journal
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    • 제59권9호
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    • pp.1057-1063
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    • 2018
  • Purpose: Coronary artery spasm (CAS) and diabetes mellitus (DM) are implicated in endothelial dysfunction, and insulin resistance (IR) is a major etiological cause of type 2 DM. However, the association between CAS and IR in non-diabetic individuals has not been elucidated. The aim of the present study was to evaluate the impact of IR on CAS in patients without DM. Materials and Methods: A total of 330 eligible patients without DM and coronary artery disease who underwent acetylcholine (Ach) provocation test were enrolled in this study. Inclusion criteria included both hemoglobin A1c <6.0% and fasting glucose level <110 mg/dL without type 2 DM. Patients were divided into quartile groups according the level of homeostasis model assessment of insulin resistance (HOMA-IR): 1Q (n=82; HOMA-IR<1.35), 2Q (n=82; $1.35{\leq}HOMA-IR<1.93$), 3Q (n=83; $1.93{\leq}HOMA-IR<2.73$), and 4Q (n=83; $HOMA-IR{\geq}2.73$). Results: In the present study, the higher HOMA-IR group (3Q and 4Q) was older and had higher body mass index, fasting blood glucose, serum insulin, hemoglobin A1c, total cholesterol, and triglyceride levels than the lower HOMA-IR group (1Q). Also, poor IR (3Q and 4Q) was considerably associated with frequent CAS. Compared with Q1, the hazard ratios for Q3 and Q4 were 3.55 (95% CI: 1.79-7.03, p<0.001) and 2.12 (95% CI: 1.07-4.21, p=0.031), respectively, after adjustment of baseline risk confounders. Also, diffuse spasm and accompanying chest pain during Ach test were more strongly associated with IR patients with CAS. Conclusion: HOMA-IR was significantly negatively correlated with reference diameter measured after nitroglycerin and significantly positively correlated with diffuse spasm and chest pain.

Naloxone Postconditioning Alleviates Rat Myocardial Ischemia Reperfusion Injury by Inhibiting JNK Activity

  • Xia, Anzhou;Xue, Zhi;Wang, Wei;Zhang, Tan;Wei, Tiantian;Sha, Xingzhi;Ding, Yixun;Zhou, Weidong
    • The Korean Journal of Physiology and Pharmacology
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    • 제18권1호
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    • pp.67-72
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    • 2014
  • To investigate the alteration of c-Jun N-terminal kinase (JNK) activity after myocardial ischemia reperfusion injury (MIRI) and further explore the effect of naloxone postconditioning on MIRI. Forty male Sprague Dawley rats were randomly divided into five groups: sham operation (sham, n=8); ischemia reperfusion (IR, n=8); IR+naloxone 0.5 mg/kg (Nal L, n=8); IR+naloxone 1.0 mg/kg (Nal M, n=8); IR+naloxone 2.0 mg/kg (Nal H, n=8). Pathological changes of myocardial tissue were visualized by HE staining. The expression of p-JNK, and the apoptosis of cardiomyocytes were investigated with Western blotting and the TUNEL assay, respectively. Irregular arrangement and aberrant structure of myocardial fibers, cardiomyocytes with granular or vacuolar degeneration, and inflammatory cells infiltrating the myocardial interstitial regions characterized MIRI in the IR group. Signs of myocardial injury and inflammatory infiltration were less prominent in the Nal-treated groups. The expression of p-JNK in the sham group and in all Nal-treated groups was significantly lower than that in the IR group (p<0.01). The apoptosis index of cardiomyocytes in the IR group was significantly higher than in the sham group (p<0.01). The apoptosis indices of cardiomyocytes in all Nal-treated groups were significantly reduced to 55.4%, 26.2%, and 27.6%, respectively, of the IR group (p<0.01). This study revealed that Naloxone postconditioning before reperfusion inhibits p-JNK expression and decreases cell apoptosis, thus alleviating MIRI.

TiN/W 플러그 구조 위에 제작된 Ir/$IrO_2$/PZT/Pt/$IrO_2$/Ir 강유전체 커패시터의 전기적 특성 (Electrical Properties of Integrated Ir/$IrO_2$/PZT/Pt/$IrO_2$/Ir Ferroelectric Capacitor on TiN/W Plug Structure)

  • 최지혜;권순용;황성연;김윤정;손영진;조성실;이애경;박상현;이백희;박남균;박해찬;장헌용;홍석경;홍성주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.321-322
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    • 2006
  • The electrical properties of PZT thin film capacitor on TiN/W plug structure were investigated for high density ferroelectric memory devices. In order to enhance the ferroelectric properties of PZT capacitor, the process conditions of bottom electrodes were optimized. The fabricated PZT capacitor on TiN/W plug showed good remanent polarization, leakage current, and contact resistance of TiN/W plug, which were $33\;{\mu}C/cm^2$, $1.2{\times}10^{-6}\;A/cm^2$, and 5.3 ohm/contact, respectively.

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[TCTA-TAZ] : Ir(ppy)3 이중 발광층을 갖는 고효율 녹색 인광소자의 제작과 특성 평가 (Fabrication and Characterization of High Efficiency Green PhOLEDs with [TCTA-TAZ] : Ir(ppy)3 Double Emission Layers)

  • 신상배;신현관;김원기;장지근
    • 한국재료학회지
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    • 제18권4호
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    • pp.199-203
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    • 2008
  • High-efficiency phosphorescent organic light emitting diodes using TCTA-TAZ as a double host and $Ir(ppy)_3$ as a dopant were fabricated and their electro-luminescence properties were evaluated. The fabricated devices have the multi-layered organic structure of 2-TNATA/NPB/(TCTA-TAZ) : $Ir(ppy)_3$/BCP/SFC137 between an anode of ITO and a cathode of LiF/AL. In the device structure, 2-TNATA[4,4',4"-tris(2-naphthylphenyl-phenylamino)-triphenylamine] and NPB[N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] were used as a hole injection layer and a hole transport layer, respectively. BCP [2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline] was introduced as a hole blocking layer and an electron transport layer, respectively. TCTA [4,4',4"-tris(N-carbazolyl)-triphenylamine] and TAZ [3-phenyl-4-(1-naphthyl)-5-phenyl-1,2,4-triazole] were sequentially deposited, forming a double host doped with $Ir(ppy)_3$ in the [TCTA-TAZ] : $Ir(ppy)_3$ region. Among devices with different thickness combinations of TCTA ($50\;{\AA}-200\;{\AA}$) and TAZ ($100\;{\AA}-250\;{\AA}$) within the confines of the total host thickness of $300\;{\AA}$ and an $Ir(ppy)_3$-doping concentration of 7%, the best electroluminescence characteristics were obtained in a device with $100\;{\AA}$-think TCTA and $200\;{\AA}$-thick TAZ. The $Ir(ppy)_3$ concentration in the doping range of 4%-10% in devices with an emissive layer of [TCTA ($100\;{\AA}$)-TAZ ($200\;{\AA}$)] : $Ir(ppy)_3$ gave rise to little difference in the luminance and current efficiency.

Surface-enhanced infrared detection of benzene in air using a porous metal-organic-frameworks film

  • Kim, Raekyung;Jee, Seohyeon;Ryu, Unjin;Lee, Hyeon Shin;Kim, Se Yun;Choi, Kyung Min
    • Korean Journal of Chemical Engineering
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    • 제36권6호
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    • pp.975-980
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    • 2019
  • Infrared (IR) spectroscopy is a powerful technique for observing organic molecules, as it combines sensitive vibrational excitations with a non-destructive probe. However, gaseous volatile compounds in the air are challenging to detect, as they are not easy to immobilize in a sensing device and give enough signal by themselves. In this study, we fabricated a thin nanocrystalline metal-organic framework (nMOF) film on a surface plasmon resonance (SPR) substrate to enhance the IR vibration signal of the gaseous volatile compounds captured within the nMOF pores. Specifically, we synthesized nanocrystalline HKUST-1 (nHKUST-1) particles of ca. 80 nm diameter and used a colloidal dispersion of these particles to fabricate nHKUST-1 films by a spin-coating process. After finding that benzene was readily adsorbed onto nHKUST-1, an nHKUST-1 film deposited on a plasmonic Au substrate was successfully applied to the IR detection of gaseous benzene in air using surface-enhanced IR spectroscopy.

Ir(ppy)3의 도핑 위치에 따른 유기 발광 다이오드의 특성 연구

  • 김순곤;최병덕
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.151.2-151.2
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    • 2015
  • 본 연구에서는 indium-tin-oxide(ITO)/1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile(HAT-CN)/N,N'-di(naphthalene-lyl)-N,N'-diphenyl-benzidine(NPB)/4,4'-Bis(N-carbazolyl)-1,1'-biphenyl(CBP)/2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)TPBi/tris-(8-hydroxyquinoline) aluminum($Alq_3$)/LiF/Al 구조를 가진 유기 발광 다이오드 소자의 발광층에 $Ir(ppy)_3$(2% wt)을 도핑하여 소자의 특성 변화를 살펴보았다. $Ir(ppy)_3$의 두께는 5nm이고 도핑 위치는 정공 수송층과 발광층 계면의 0nm에서부터 25nm까지 5nm간격으로 도핑을 하였다. 실험 결과 소자의 효율은 도핑 위치가 정공 수송층에서 25nm떨어진 위치일 때 가장 높았고, 10nm일 때 가장 낮았다. 이는 도핑 부분의 위치가 정공 차단층에 가까워질수록 정공과 전자의 균형이 좋아지는 것이 소자 성능을 향상시키는 원인으로 추측된다.

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