• Journal of the Korean Ceramic Society
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• v.31 no.8
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• pp.927-933
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• 1994

Alumina composite membranes were prepared by chemical vapor deposition (CVD) using aluminum-tri-isopropoxide as a precursor. Porous alumina supports were used in deposition, which were in disk shape with mean pore diameter of 0.1 ${\mu}{\textrm}{m}$ and prepared by slip-coasting process. film deposition morphology on porous support was simulated through depositing alumina film on polycrystalline silicon pattern, and its step coverage observed by SEM showed one deviated from uniform step coverage. N2 permeability through composite membranes and the pressure dependence decreased as the deposition time increased. Initially, the N2 permeability of the top layer was tend to decrease rapidly, and then the degree of decrease in N2 permeability was tend to diminish with deposition time. The N2 permeability increased with heat treatment temperature and the crack was generated in top layer at 100$0^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.41 no.6
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• pp.279-286
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• 2008

Numerical analysis is done to investigate which would be the most influencing process parameter in determining the uniformity of deposition thickness in TiN ICP-CVD(inductively coupled plasma chemical vapor deposition). Two configurations of ICP antenna are modeled; side and top planar. Side and top gas inlets are considered with each ICP antenna geometries. Precursor for TiN deposition was TDMAT(Tetrakis Diethyl Methyl Amido Titanium). Two step volume dissociation of TDMAT is used and absorption, desorption and deposition surface reactions are included. Most influencing factors are H and N concentration dissociated by electron impact collisions in plasma volume which depends on the relative positions of gas inlet and ICP antenna generated hot plasma region. Low surface recombination of N shows hollow type concentration, but H gives a bell type distribution. Film thickness at substrate edges is sensitive to gas flow rate and at high pressures getting more dependent on flow characteristics.

• Transactions of the Korean Society of Mechanical Engineers
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• v.16 no.12
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• pp.2340-2348
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• 1992

Recently, various film coated insert tools have been used in order to improve tool life by several different vapor deposition or chemical vapor deposition. Especially, TiN coated drills have been broadly studied because of improving drill performance in terms of drill life, work quality and its brilliant color. Nevertheless, because of the poor adhesion between TiN film and drill, it was difficult to attain the better drill performance. Therefore, to improve adhesion of TiN films, we sputtered titanium as interlayer prior to TiN deposition on drill by PECVD(Plasma Enhanced Chemical Vapor Deposition). The results indicate that Ti/TiN coated drills achieve about 2.6 times life improvement, while TiN coated drills only 2 times. Wear characteristics of tested drills were examined using SEM, and the results were correlated with drill life and roughness of drilled holes.

• Journal of the Korean institute of surface engineering
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• v.49 no.3
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• pp.307-315
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• 2016

The properties of AlTiN films by a cathodic arc deposition process have been studied. Oblique angle deposition has been applied to deposit AlTiN films. AlTiN films have been deposited on stainless steel (SUS304) and cemented carbide (WC) at a substrate temperature of $500^{\circ}C$. AlTiN films were analyzed by scanning electron microscopy, glow-discharge light spectroscopy, micro-vickers hardness, and nanoindenter. When applying a current of 50 A to the cathodic arc source, it showed that the density of macroparticle of AlTiN films was 5 lower than other deposition conditions. With the increase of the bias voltage applied to the substrate up to -150 V, the density of macroparticle was decreased. The change of the $N_2$ flow rate during coating process made no influence on the film properties. For the multi-layered films, the film prepared at oblique angle of $60^{\circ}$ showed the highest hardness of 28 GPa and $H^3/E^2$ index of 0.18. AlTiN films have been shown a good oxidation resistance up to $800^{\circ}C$.

• Korean Chemical Engineering Research
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• v.46 no.4
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• pp.676-680
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• 2008

TiN thin films were deposited on a $SiO_2(2000{\AA})/Si$ substrate by radio-frequency(rf) magnetron sputtering. TiN films were prepared under varying $N_2$ concentration in $N_2/Ar$ gas mix, rf power and gas pressure, and investigated in terms of deposition rate, resistivity and surface morphology. As $N_2$ concentration increased, the deposition rate and the surface roughness of the films decreased and the resistivity increased. With increasing rf power, the deposition rate increased but the resistivity was decreased. As gas pressure increased, little change in deposition rate was obtained but the resistivity rapidly increased. TiN film with resistivity of $2.46{\times}10^{-4}{\Omega}cm$ at 1 mTorr was formed. It was observed that there existed a correlation between the deposition rate and resistivity. In particular, the gas pressure has a strong influence on the resistivity of thin films.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.10 no.5
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• pp.44-50
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• 2011

The effect of deposition time in arc ion plating on surface properties of the TiN-coated SM45C steel is presented in this paper. The surface roughness, micro-particle, micro-hardness, coated thickness, atomic distribution of TiN, and adhesion strength are measured for various deposition times. It has been shown that the deposition time has a considerable effect on the micro-hardness, the coated thickness, and the atomic distribution of TiN of the SM45C steels but that it has little influence on the surface roughness and adhesion strength.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.139-144
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• 2014

GaN deposition equipment and processes for the fabrication of white LEDs (Light Emitting Diode) using MOCVD (Metal Organic Chemical Vapor Deposition) were numerically modeled to analyze the effects of a reactive gas introduction strategy. The source gases, TMGa and $NH_3$, were injected from a shower head at the top of the chamber; the carrier gases, $H_2$ or $N_2$, were introduced using two types of injection structures: vertical and horizontal. Wafers sat on the holder at a radial distance between 100 mm and 150 mm. The non-uniformity of the deposition rates for vertical and horizontal injection were 4.3% and 3.1%, respectively. In the case of using $H_2$ as a carrier gas instead of $N_2$, the uniform deposition zone was increased by 20%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.259-260
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• 2006

$Bi_2Sr_2Ca_{n-1}Cu_nO_x$ superconducting thin films have been fabricated by atomic layer-by-layer deposition using IBS(Ion Beam Sputtering) method During the deposition, 90 mol% ozone gas of typical pressure of $1{\sim}9{\times}10^{-5}$ T orr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.314-319
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• 1998

TiN thin films were deposited on SKD 61 steel substrates by reactive sputtering under various deposition conditions, and subsequently their growth characteristics and properties were studied. Deposition rate was proportionally increased with total gas pressure as well as RF input power, while the increase of nitrogen in the reaction gas induced a significant suppression of deposition rate. The resulted films exhibited hillocks on the surface. The TiN film prepared using a typical deposition condition showed a (111) preferred orientation and maintained the stoichiometry of pure TiN.

• Journal of the Korean Society for Heat Treatment
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• v.2 no.4
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• pp.1-10
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• 1989

To investigate the influence of temperature on the TiN film, it was deposited on the STC-3 steel and Si-wafer from $TiCl_4/N_2/H_2$ gas mixture by using the radio frequency plasma assisted chemical vapor deposition. The deposition was performed at temperature of $400^{\circ}C-500^{\circ}C$. The results showed that crystalline TiN film was deposited over $480^{\circ}C$, and all specimens showed the crystalline TiN X-ray diffraction peaks after vacuum heat treatment for 3 hrs, at $1000^{\circ}C$, $10^{-5}torr$. While the film thickness was increased above $480^{\circ}C$, it was decreased under $480^{\circ}C$ as temperature increased. And the contents of titanium were increased and it of chlorine were decreased as temperature increased. Because temperature increase was attributed to the increase in the density of TiN film, surface hardness of TiN film was increased with temperature.