• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.636-636
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• 2013

Since first discovery of strong Raman spectrum of molecules adsorbed on rough noble metal, surface enhanced Raman scattering (SERS) has been widely used for detection of molecules with low concentration. Surface plasmons at noble metal can enhance Raman spectrum and using Au nanostructures as substrates of SERS has advantages due to it has chemical stability and biocompatibility. However, the photoluminescence (PL) background from Au remains a problem because of obtaining molecular vibration information. Recently, graphene, two-dimensional atomic layer of carbon atoms, is also well known as PL quenchers for electronic and vibrational excitation. In this study, we observed SERS of single layer graphene on or under monolayer of Au nanoparticles (NPs). Single layer graphene is grown by chemical vapor deposition and transferred onto or under the monolayer of Au NPs by using PMMA transfer method. Monolayer of Au NPs prepared using Langmuir-Blodgett method on or under graphene surface provides closed and well-packed monolayer of Au NPs. Scanning electron microscopy (SEM) and Raman spectroscopy (WItec, 532 nm) were performed in order to confirm effects of Au NPs on enhanced Raman spectrum. Highly enhanced Raman signal of graphene by Au NPs were observed due to many hot-spots at gap of closed well-packed Au NPs. The results showed that single layer graphene provides larger SERS effects compared to multilayer graphene and the enhancement of the G band was larger than that of 2D band. Moreover, we confirm the appearance of D band in this study that is not clear in normal Raman spectrum. In our study, D band appearance is ascribed to the SERS effect resulted from defects induced graphene on Au NPs. Monolayer film of Au NPs under the graphene provided more highly enhanced graphene Raman signal compared to that on the graphene. The Au NPs-graphene SERS substrate can be possibly applied to biochemical sensing applications requiring highly sensitive and selective assays.

• 한국표면공학회지
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• 제18권4호
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• pp.153-163
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• 1985

In the electroless nickel plating bath which contained nickel sulfate, sodium hypophosphite, boric acid and triethanolamine, effect of their concentration on the rate of deposition was tested by gravimetric method and polarization method. The polarization method that polarize small range of voltage anodicaly and cathodicaly at the mixed potential in the electroless plating bath can calculate mixed current (depositing rate) from $i_{mp}=\frac {i}{\eta}\;\frac{RT}{nF}\;or\;i_{mp}=\frac{i}{\eta}\;\frac{1}{2.3}(\frac{b_a\;\;b_c}{b_c+b_a})$ Where $i_{mp}$ is the depositing current, i is the polarized current, ${\eta}$ is the polarized voltage, $b_a\;and\;b_c$ are the Tafel slop of anodic and cathodic polarization curves respectively. The calculated mixed current ($i_{mp}$) is proportional to the depositing rate obtained by gravimetric method and corresponded mostly to the real depositing rate by multifying supplementary constant. The polarization method can be used for founding inclination of reaction on various concentration of each composition. Decreasing or increasing concentration of triethanolaminc as a complexing agent , the depositing rate is decreased and when the bath contained 25-50mL/L of triethanoloamine, the depositing rate is increased. The depositing rate is increased with increasing the concentration of boric acid, and when the bath contained 0.5M of boric acid, the depositing rate is increased abruptly. The optimum composition of the electroless nickel bath was estimated 0.1M of nickel sulfate, 0.25M of sodium hypophosphite, 0.5M of boric acid, and 25-50mL/L of triethanalamine.

• 한국결정성장학회지
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• 제25권4호
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• pp.145-152
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• 2015

rf-PECVD 방법에 의해서 $CH_4+H_2$ 혼합가스를 이용Si-웨이퍼 위에 DLC 박막을 증착할 때, 이산화탄소나 질소 등 보조가스가 증착된 박막의 결합구조와 기계적 특성에 미치는 영향을 고찰하였다. DLC 박막의 증착속도는 rf-power가 증가함에 따라서 증가하지만, 보조가스의 양이 증가함에 따라서는 감소하였다. 또한, 이산화탄소($CO_2$) 가스가 증가함에 따라 박막내 수소 함량은 감소하였으나, $sp^3/sp^2$ 결합 비는 증가하였다. 질소($N_2$) 가스가 증가하는 경우는 수소 함량은 감소하였으나, $sp^3/sp^2$ 결합비 변화에 있어 경향성은 보이지 않는 것으로 확인되었다.

• Carbon letters
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• 제8권2호
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• pp.108-114
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• 2007

In this work, activated carbon (AC) after $HNO_3$ modification was used as the support during the production of supported $TiO_2$ to increase the high deposition efficiency and the photocatalytic activity. The results of $N_2$ adsorption showed that the BET surface area of samples decreased with an increasing of the concentration of $HNO_3$ due to the penetration of $TiO_2$. From XRD data, a single crystal structure of anatase peak was observed in diffraction patterns for the AC coated with titanium complexes. From the SEM results, almost all particles were aggregated with each other at the carbon surface and AC was covered with $TiO_2$ particles in all of the samples. The EDX spectra show the presence of C, O, Ti and other elements. It was also observed a decreasing of amount of C content with increasing Ti and O content from the EDX. The results of FT-IR revealed that the modified AC contained more surface oxygen bearing groups than that of the original AC. The effect of surface acidity and basity calculated from Boehm titration method was also evaluated from correlations as a function of NaOH, $NaHCO_3$, and $Na_2CO_3$ uptake. The surface modification of AC by $HNO_3$ leads to an increase in the catalytic efficiency of AC/$TiO_2$ catalysts, and the catalytic efficiency increases with increasing of $HNO_3$ concentration.

• 한국전기전자재료학회논문지
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• 제30권4호
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• pp.229-234
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• 2017

In this study, we fabricated a TFT gas sensor with ZnO nanorods grown by hydrothermal synthesis. The suggested devices were compared with the conventional ZnO film-type TFTs in terms of the gas-response properties and the electrical transfer characteristics. The ZnO seed layer is formed by atomic-layer deposition (ALD), and the precursors for the nanorods are zinc nitrate hexahydrate ($Zn(NO_3)_2{\cdot}6H_2O$) and hexamethylenetetramine ($(CH_2)6N_4$). When 15 ppm of NO gas was supplied in a gas chamber at $150^{\circ}C$ to analyze the sensing capability of the suggested devices, the sensitivity (S) was 4.5, showing that the nanorod-type devices respond sensitively to the external environment. These results can be explained by X-ray photoelectron spectroscopy (XPS) analysis, which showed that the oxygen deficiency of ZnO nanorods is higher than that of ZnO film, and confirms that the ZnO nanorod-type TFTs are advantageous for the fabrication of high-performance gas sensors.

• Korean Chemical Engineering Research
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• 제46권4호
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• pp.701-706
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• 2008

이송식 아크 열플라즈마를 이용하여 벌크상태의 니켈을 증발시킨 후 급속한 냉각과정을 거쳐 니켈 나노입자를 합성하였다. 플라즈마에 의해 질소가 용이하게 해리되어 용융된 니켈속으로 용해되고 과포화된 질소원자는 질소 분자로 가스화반응을 하여 반응열을 발산하는데 그 반응열에 의해 다량의 니켈증기가 생성된다. 생성된 니켈증기는 희석가스와 냉각가스를 이용하여 나노 입자 크기의 니켈분말로 제조된다. 희석가스 유량이 증가할수록 입자크기는 감소하였으며 그 분포경향이 작은 크기에서 좁게 나타났다. 평균입자크기는 희석가스 유량이 250 l/min에서 202 nm로 분석되었으며 모든 입자는 250 nm 이하 크기에서 존재함을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.617-620
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• 1999

In this study, the polarization e(fecal and the birefringence effect of amorphous germanium (a-Ge) thin films were investigated by using linearly polarized He-Ne laser beam. The a-7e thin films were deposited on the quarts substrate by plasma enhanced chemical vapor deposition (PECVD) and thermal vacuum evaporation In order to obtain the optimum grating arrays, inorganci resists such as Si$_3$N$_4$ and a-Se$_{75}$ Ge$_{25}$ , were prepared with the optimized thickness by Monte Carlo (MC) simulation. As the results of MC simulation, the thickness ofa-Se$_{75}$ Ge$_{25}$ resist was determined with Z$_{min}$ of 360$\AA$ . The resists were exposed to Ga$^{+}$-FIB with accelerating energies of 50 keV, developed by wet etching, and a-Ge thin film was etched by reactive ion-etching (RIE). Finally, we were obtained grating arrays which grating width and linewidth are 0.8${\mu}{\textrm}{m}$, respectively and we studied the polarization and birefringence effect in transmission grating array made of high refractive amorphous material, and the applicability as waveplates and polarizers in optical device.e.e.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.109-110
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• 2006

In bio applications, high temperature coefficient of resistance (TCR) at $30^{\circ}C{\sim}40^{\circ}C$ is especially important for a temperature sensor. In this work, single phase-vanadium dioxide ($VO_2$) thin films for temperature sensor were fabricated by reactive DC magnetron sputtering and post-annealing method. VOx thin films deposited by reactive sputtering in a controlled $Ar/O_2$ atmosphere can be transformed into single phase-$VO_2$ films by post-annealing in $N_2$ atmosphere. The grown $VO_2$ thin films have a moderate resistance at room temperature and very high TCR at room temperature and transition temperature, respectively 2.88%/K and 15.8%/K. A detailed structural characterization is performed by SEM, XRD and RBS. SEM morphology image indicates that grains of fabricated $VO_2$films are homogeneous and ball-like in shape. A fact that the films contain only single phase-$VO_2$ is obtained by XRD and RBS analysis. After deposition, the sensors were fabricated by micromachining technology. Silicon nitride membrane and black nickel were used for a thermal isolation structure and absorption layer. In the vicinity of room temperature, the TCR of sensors was enough high to apply for bio sensors.

• Bulletin of the Korean Chemical Society
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• 제35권4호
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• pp.1182-1190
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• 2014

$Cd_{1-x}Zn_xS$-sensitized $K_4Nb_6O_{17}$ composite photocatalysts (designated $Cd_{1-x}Zn_xS/K_4Nb_6O_{17}$) were prepared via a simple deposition-precipitation method. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectrometry (EDS), $N_2$ sorption, ultraviolet-visible light diffuse reflectance spectroscopy (UV-Vis DRS), photoluminescence measurements (PL), and X-ray photoelectron spectroscopy (XPS). The $Cd_{0.8}Zn_{0.2}S$ particles were scattered on the surface of $K_4Nb_6O_{17}$, and had a relatively uniform size distribution around 50 nm. The absorption edge of $K_4Nb_6O_{17}$ was shifted to the visible light region and the recombination of photo-generated electrons and holes suppressed after $Cd_{0.8}Zn_{0.2}S$ loading. The $Cd_{0.8}Zn_{0.2}S$(25 wt %)/$K_4Nb_6O_{17}$ composite possessed the highest photocatalytic activity for hydrogen production under visible light irradiation, evolving 8.278 mmol/g in 3 h. Recyclability tests were performed, and the composite photocatalysts were found to be fairly stable. The mechanism of charge separation between the photogenerated electrons and holes at the $Cd_{0.8}Zn_{0.2}S/K_4Nb_6O_{17}$ composite was discussed.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.34.1-34.1
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• 2009

A great deal of attention has been focused on ZnO nanowires for various electronics and optoelectronics applications. in the pursuit of next generation nanodevices, it would be highly preferred if well-ordered ZnO nanowires of lower dimension could be fabricated on silicon. Before the growth of nanowires, silicon substrates were selectively etched using silicon nitride as masking layer. Vertical aligned ZnO nanowires were grown by metal organic chemical vapor deposition on patterned silicon substrate. The shape of nanostructures was greatly influenced by the micropatterned surface of the substrate. The aspect ratio, packing fraction and the number density of nanowires on top surface are around 10, 0.8 and $10^7\;per\;mm^2$, respectively, whereas the values are 20, 0.3 and $5\times10^7\;per\;mm^2$, respectively, towards the bottom of the cavity. XRD patterns suggest that the nanostructures have good crystallinity. High-resolution transmission electron microscopy confirmed the single crystalline growth of the ZnO nanowires along [0001] direction.