• 한국수소및신에너지학회논문집
• /
• 제21권5호
• /
• pp.355-363
• /
• 2010

High purity hydrogen, 97-99 vol.%, with CO at just ppm levels was obtained in a fixed bed of iron oxide employing the steam-iron cycle operation with reduction at 823K and oxidation in a steam-$N_2$ mixture at 773K TGA experiments indicated that temperature of the reduction step as well as its duration are important for preventing carbon build-up in iron and the intrusion of $CO_2$ into the hydrogen product. At a reduction temperature of 823K, oxide reduction by $H_2$ was considerably faster than reduction by CO. If the length of the reduction step exceeds optimal value, low levels of methane gas appeared in the off-gas. Furthermore, with longer durations of the reduction step and CO levels in the reducing gas greater than 10 vol.%, carbidization of the iron and/or carbon deposition in the bed exhibited the increasing pressure drop over the bed, eventually rendering the reactor inoperable. Reduction using a reducing gas containing 10 vol.% CO and a optimal reduction duration gave constant $H_2$ flow rates and off-gas composition over 10 redox reaction cycles.

• Journal of Information Display
• /
• 제6권4호
• /
• pp.1-5
• /
• 2005

Perylene-based pyrrolopyrone derivative (PPD) was synthesized via condensation reaction with perylenetetracarboxylic dianhydride and 1,2-phenylenediarnine as n-type channel material. The structure of PPD was characterized by spectroscopic methods such FT-IR and $^1H$-NMR. PPD exhibited high thermal stability ($T_{d5wt%}: 560^{\circ}C$) and was found to be soluble only in protonic solvents with high acidity such as methane sulfonic acid and trifluoroacetic acid. The PPD solution showed maximum absorption and emission at 601 and 628 nm, respectively. Thin film transistors were fabricated by vacuum deposition and solution casting method. The electron mobilities of the devices were achieved as high as $0.17{\times}10^{-6}cm^2/Vs$ for vacuum deposited device and $0.4{\times}10^{-6}cm^2/Vs$ for spin coated device, respectively.

• Transactions on Electrical and Electronic Materials
• /
• 제3권1호
• /
• pp.4-8
• /
• 2002

The typical mold method for FED (field emission display) fabrication is used to form a gate electrode, a gate oxide layer, and emitter tip after fabrication of a mold shape using wet-etching of Si substrate. However, in this study, new mold method using a side wall space structure was developed to make sharp emitter tips with the gate electrode. In new method, gate oxide layer and gate electrode layer were deposited on a Si wafer by LPCVD (low pressure chemical vapor deposition), and then BPSG (Boro phosphor silicate glass) thin film was deposited. After then, the BPSG thin film was flowed into the mold at high temperature in order to form a sharp mold structure. TiN was deposited as an emitter tip on it. The unfinished device was bonded to a glass substrate by anodic bonding techniques. The Si wafer was etched from backside by KOH-deionized water solution. Finally, the sharp field emitter array with gate electrode on the glass substrate was formed.

• The Korean Journal of Ceramics
• /
• 제2권2호
• /
• pp.95-101
• /
• 1996

Variations of the leakage current behaviors and interface potential barrier $({\Phi}_B)$ of rf-sputter deposited (Ba, Sr)$TiO_3$ (BST) thin films with thicknesses ranging from 20 nm to 150nm are investigated as a function of the thickness and bias voltages. The top and bottom electrodes are dc-sputter-deposited Pt films. ${\Phi}_B$ critically depends on the BST film deposition temperature, postannealing atmosphere and time after the annealing. The postannealing under $N_2$ atmosphere results in a high interface potential barrier height and low leakage current. Maintaining the BST capacitor in air for a long time reduces the ${\Phi}_B$ from about 2.4 eV to 1.6 eV due to the oxidation. ${\Phi}_B$ is not so dependent on the film thickness in this experimental range. The leakage conduction mechanism is very dependent on the BST film thickness; the 20 nm thick film shows tunneling current, 30 and 40 nm thick films show Shottky emission current.

• 한국전기전자재료학회논문지
• /
• 제16권7호
• /
• pp.599-603
• /
• 2003

Ferroelectric B $i_4$$_{-x}$N $d_{x}$ $Ti_3$ $O_{12}$ (BNdT) thin films with the composition(x=0.75) were prepared on Pt/Ti/ $SiO_2$(100) substrate by metal-organic deposition. The films were annealed by various temperatures from 550 to $650^{\circ}C$ and then the electrical and structural characteristics of BNdT films were investigated for the application of FRAM. Electrical properties such as dielectric constant, 2Pr and capacitance were quite dependent on the thermal heat treatment. The measured 2Pr value on the BNdT capacitor annealed at $650^{\circ}C$ was 56$\mu$C/$\textrm{cm}^2$ at an applied voltage of 5V. In fatigue characteristics value remained constant up to 8$\times$10$^{10}$ read/write switching cycles at a frequency of 1Mhz regardless of annealing temperatures.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
• /
• pp.1862-1864
• /
• 2005

Carbon nanotubes [CNTs] are grown on TiN-coated Si substrates at $700^{\circ}C$ by inductively coupled plasma-chemical vapor deposition (ICP-CVD). Pre-treatment of Ni catalysts has been performed using an RF magnetron sputtering system. Structural properties and field-emission characteristics of the CNTs grown are analyzed in terms of the RF power applied and the treatment time used in the pre-treatment process. The characterization using various techniques, such as FE-SEM, AFM, and Raman spectroscopy, show that the physical dimension as well as the crystal quality of CNTs are changed by pre-treatment of Ni catalysts. It is also seen that Ni catalysts with proper grain size and uniform surface roughness may produce much better electron emission. The physical reason for all the measured data obtained are discussed to establish the relationship between the structural property and the electron emission characteristic of CNTs.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
• /
• pp.2052-2054
• /
• 2005

TFT-LCD requires to use poly silicon for High resolution and High integration. Thin film make of Poly silicon on the excimer laser-induced crystallization of PECVD(plasma-enhanced chemical vapor deposition)-grown amorphous silicon. In the thin film hydrogen affects to a device performance from bad elements like eruption, void and etc. So dehydrogenation prior to laser exposure was necessary. In this study, use RTP(Rapid Thermal Process) at various temperature from $670^{\circ}C$ to $750^{\circ}C$ and fabricate poly-silicon. it propose optimized RTP window to compare grain size to use poly silicon's SEM pictures and crystallization to analyze Raman curved lines.

• 한국주조공학회지
• /
• 제12권6호
• /
• pp.471-479
• /
• 1992

For the last 2 decades, the bonding materials for the foundry sand and the foundry equipments with high performance have been developed and employed in the foundry shops. In those periods, the furan resins hardened in higher temperature have been replaced with the self-hardened ones in the room temperature. Simultaneously the various reclamation methods of the self-hardened furan resin sand have been developed in order to get the clean working environments, the reduction of solid wastes and the lower of production cost in the foundry. In this experimental study, the combustion reclamation method using the fluidized bed among the various methods was studied in order to reduce the L.O.I. and /or $N_2$ gas due to the deposition of the furan resins and the hardeners. Comparing the results of this experimental combustion reclamation method with those of the employed pneumatic method, the Surface Stability Index of the specimen made by combustion method is 30% higher than that of the latter one and L.O.I. decreases about 30%. The reclamation temperature of 650$^{\circ}C$ in this experimental fluidized bed would be recommended in the viewpoints of the reclamation period, the fuel consumption and the residual quantity of the furan resin. The formula determining the minimum fluidizing velocities according to the temperatures in the fluidized bed has been obtained.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.472-473
• /
• 2007

The $(Sr_{1-x}Ca_x)TiO_3$(ST) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. Also, the composition of ST thin films were closed to stoichiometry(1.081~1.117 in A/B ratio). The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The current-voltage characteristics of ST15 thin films showed the increasing leakage current as the measuring temperature increases.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
• /
• pp.237-239
• /
• 1994

The $NO_2$ gas-detection characteristics were investigated using the functional organic Langmuir-Blodgett(LB) film of Tetra-3-hexadecyl-sulphamoylcopperphthalocyanine(HDSM-CuPc). A surface pressure of 30mN/m was obtained as a proper one for a film deposition. A deposited film status was confirmed by electrical and optical methods such as UV/visible absorption spectra and current-voltage(I-V) characteristics. The $NO_2$ gas response experiments under 200ppm concentration show that there is not increment of electrical conductivity in room temperature and is identified by UV/visible absorption spectra. But There are some increments of electrical conductivity in $160^{\circ}C$.