• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.270-275
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• 2013

Single-layer graphene layers have been synthesized by using chemical vapor deposition, subsequently transferred on 300 nm $SiO_2/Si$ and quartz substrates, and doped with $AuCl_3$ by spin coating for various doping concentrations ($n_D$) from 1 to 10 mM. Based on the $n_D$-dependent variations of Raman frequencies/peak-intensity ratios, sheet resistance, work function, and Dirac point, measured by structural, optical, and electrical analysis techniques, the p-type nature of graphene is shown to be strengthened with increasing $n_D$. Especially, as estimated from the drain current-gate voltage curves of graphene field effect transistors, the hole mobility is very little varied with increasing $n_D$, in strong contrast with the $n_D$-dependent large variation of electron mobility. These results suggest that $AuCl_3$ is one of the best p-type dopants for graphene and is promising for device applications of the doped graphene.

• Korean Chemical Engineering Research
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• v.46 no.3
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• pp.619-625
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• 2008

The effects of thermal cycling on residual stresses in both inorganic passivation/insulating layer that is deposited by plasma enhanced chemical vapor deposition (PECVD) and organic thin film that is used as a bonding adhesive are evaluated by 4 point bending method and wafer curvature method. $SiO_2/SiN_x$ and BCB (Benzocyclobutene) are used as inorganic and organic layers, respectively. A model about the effect of thermal cycling on residual stress and bond strength (Strain energy release rate), $G_c$, at the interface between inorganic thin film and organic adhesive is developed. In thermal cycling experiments conducted between $25^{\circ}C$ and either $350^{\circ}C$ or $400^{\circ}C$, $G_c$ at the interface between BCB and PECVD $ SiN_x $ decreases after the first cycle. This trend in $G_c$ agreed well with the prediction based on our model that the increase in residual tensile stress within the $SiN_x$ layer after thermal cycling leads to the decrease in $G_c$. This result is compared with that obtained for the interface between BCB and PECVD $SiO_2$, where the relaxation in residual compressive stress within the $SiO_2$ induces an increase in $G_c$. These opposite trends in $G_cs$ of the structures including either PECVD $ SiN_x $ or PECVD $SiO_2$ are caused by reactions in the hydrogen-bonded chemical structure of the PECVD layers, followed by desorption of water.

• Journal of Korean Society for Atmospheric Environment
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• v.13 no.5
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• pp.371-381
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• 1997

Precipitation sampls were collected in Chonju-city during October 1994 to September 1995 and were analysed for major ions (N $a^{+}$, $K^{+}$, $Ca^{2+}$, $Mg^{2+}$, C $l^{[-10]}$ , NO/$_3$, S $O_4$$^{2-}$) and trace metals (Al, Cd, Ni, Pb, Sr, Zn) in addition to pH, in order to understand the chemical characteristics of acid rain and to estimate the origin of the determined ions. Most rain showed a neutral or alkaline character, and only 35% had a pH lower than 5.6. S $O_4$$^{2-}$ and N $O_3$$^{[-10]}$ are identified as the primary contributors to precipitation acidity in this region. Neutralization of precipitation acidity occurs as a result of the dissolution of alkaline compounds containing $Ca^{2+}$, $Mg^{2+}$ and $K^{+}$. S $O_4$$^{2-}$ and N $O_3$$^{[-10]}$ precipitation concentrations exhibit a seasonal pattern in which higher concentrations are observed during spring months and lower concentrations during summer months. However, the seasonal behavior of $H^{+}$ concentrations differs from this pattern, in that the highest concentrations occur during autumn months, owing to the different influence of neutralization processes. In all rain, S $O_4$$^{2-}$ concentration exceeded NO/$_3$$^{[-10]}$ concentration. The contribution of maritime sources to the total S $O_4$$^{2-}$ concentration was very low or negligible. For rain strongly affacted by yellow sand, $Ca^{2+}$, $Mg^{2+}$ and $K^{+}$ ions show a sharp increase in concentration, reflecting the increased amount of dust and soil suspended in atmosphere. At the same time, S $O_4$$^{2-}$ and N $O_3$$^{[-10]}$ concentrations are at their highest levels while $H^{+}$ values are not comparably elevated, presumably beacause much of the acidity has been neutralized by alkaline substances. The seasonal variance of trace metal concentrations in rainwater is similar to that of major cations. The annual wet flux of acidic pollutants and trace metals wat calculated to be as follows: N $O_3$$^{[-10]}$ ; 2.32 g/$m^2$, S $O_4$$^{2-}$, 5.34 g/$m^2$, Al; 6.30 mg/$m^2$, Cd; 0.62 mg/$m^2$, Ni; 4.08 mg/$m^2$, Pb: 9.76 mg/$m^2$, Sr; 5.94 mg/$m^2$, Zn; 111 mg/$m^2$./$m^2$.

• Korean Journal of Materials Research
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• v.18 no.4
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• pp.169-174
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• 2008

The structural and electrical properties of amorphous $BaSm_2Ti_4O_{12}$ (BSmT) films on a $TiN/SiO_2/Si$ substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at $300^{\circ}C$ in a mixed oxygen and argon ($O_2$ : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of $7.60\;fF/{\mu}m2$ and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately $5.11\;nA/cm^2$ at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately $698\;ppm/V^2$, which is higher than the required value (<$100\;ppm/V^2$) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly $296\;ppm/^{\circ}C$ at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.429-429
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• 2007

For various applications of liquid crystal displays (LCDs), the uniform alignment of liquid crystal (LC) molecules on treated surfaces is significantly important. Generally, a rubbing method has been widely used to align the LC molecules on polyimide (PI) surfaces. Rubbed PI surfaces have suitable characteristics, such as uniform alignment. However, the rubbing method has some drawbacks, such as the generation of electrostatic charges and the creation of contaminating particles. Thus, we strongly recommend a non contact alignment technique for future generations of large high-resolution LCDs. Most recently, the LC aligning capabilities achieved by ultraviolet and ion-beam exposures which are non contact methods, on diamond-like carbon (DLC) inorganic thin film layers have been successfully studied because DLC thin films have a high mechanical hardness, a high electrical resistivity, optical transparency, and chemical inertness. In addition, nitrogen-doped DLC (NDLC) thin films exhibit properties similar to those of the DLC thin films and a higher thermal stability than the DLC thin films because C:N bonding in the NDLC thin filmsis stronger against thermal stress than C:H bonding in the DLC thin films. Our research group has already studied the NDLC thin films by an ion-beam alignment method. The $SiN_x$ thin films deposited by plasma-enhanced chemical vapor deposition are widely used as an insulation layer for a thin film transistor, which has characteristics similar to those of DLC inorganic thin films. Therefore, in this paper, we report on LC alignment effects and pretilt angle generation on a $SiN_x$, thin film treated by ion-beam irradiation for various N ratios

• Korean Journal of Soil Science and Fertilizer
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• v.6 no.1
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• pp.17-26
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• 1973

A survey on nutrient recovery by rice plant was carried out countrywide in 1967 and 1968. The relationships between percent recovery of fertilizer nutrient and climatic zone or deposition mode, drainage grade, and texture of paddy soil profile, or chemical characteristics of surface soil were as follows. 1. The percent recovery of fertilizer nitrogen was highest in south and least in north, and that of potassium was highest in south and least in middle climatic zone. 2. Since the percent recovery of Phosphorus variates yearly with climatic zone, mode of deposition drainage grade or soil texture, it seemed to depend greatly on soil-weather interaction. 3. Nitrogen recovery was highest in alluvial colluvial (AC) and it was followed by alluvial (A), fluvomarine (FM) and old alluvial in decreasing order while potassium recovery was OA>AC>A>FM. 4. The greater the drainage was, the higher the nitrogen recovery. The recovery of potassium and phosphorus tended to show high in moderately well drain, and low in poorly and well drain. 5. Nitrogen recovery was highest in fine silty and gradually decreased with coarseness. That of potassium or phosphorus was greater in those below fine loamy than in those above coarse silty. 6. Nitrogen recovery was high in Jisan, Geugrag, and Sindab series, and low in Hwadong, Gyuam, Yongji and Hwabong series. 7. Nitrogen recovery showed significant positive correlation with the content of organic matter (OM), Ca, CEC of surface soil and only in the year of high phosphorus recovery it had significant negative correlation with soil phosphorus. Phosphorus recovery had significant posititive correlation with CEC, Mg or Ca. 8. Potassium recovery showed negative correlation with K/(Ca+Mg), P, OM or K while positive correlation with Ca, Mg, CEC but significant only with K/(Ca+Mg) in the year of low potassium recovery. In the year of high K recovery it showed positive correlation with P, OM, K/(Ca+Mg) or K while negative with CEC, Mg or Ca but significant only with P, OM or CEC. Soil potassium has significant positive correlation with soil OM and P only in the year of low potassium recovery. 9. The percent recovery of N, P or K showed negative correlation coefficient with pH without significant. 10. There was significant positive correlation between OM and P, K or K/(Ca+Mg), P and K or K/(Ca+Mg), K and K/(Ca+Mg), Mg or CEC, Ca and K/(Ca+Mg), Mg, CEC or pH, Mg and CEC while significant negative correlation between Mg and OM, P or K/(Ca+Mg), P and CEC, Ca and K/(Ca+Mg). 11. From the percent rcovery of fertilizer and soil chemical characteristics it was known that soil organic matter increase nitrogen uptake, that K uptake has closer relation to K/(Ca+Mg) than K, that Mg affects P ugtake, and that the annual difference of P and K recovery was partly explainable.

• Korean Journal of Materials Research
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• v.26 no.6
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• pp.347-352
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• 2016

ZnO with wurtzite structure has a wide band gap of 3.37 eV. Because ZnO has a direct band gap and a large exciton binding energy, it has higher optical efficiency and thermal stability than the GaN material of blue light emitting devices. To fabricate ZnO devices with optical and thermal advantages, n-type and p-type doping are needed. Many research groups have devoted themselves to fabricating stable p-type ZnO. In this study, $As^+$ ion was implanted using an ion implanter to fabricate p-type ZnO. After the ion implant, rapid thermal annealing (RTA) was conducted to activate the arsenic dopants. First, the structural and optical properties of the ZnO thin films were investigated for as-grown, as-implanted, and annealed ZnO using FE-SEM, XRD, and PL, respectively. Then, the structural, optical, and electrical properties of the ZnO thin films, depending on the As ion dose variation and the RTA temperatures, were analyzed using the same methods. In our experiment, p-type ZnO thin films with a hole concentration of $1.263{\times}10^{18}cm^{-3}$ were obtained when the dose of $5{\times}10^{14}$ As $ions/cm^2$ was implanted and the RTA was conducted at $850^{\circ}C$ for 1 min.

• Journal of the Korean Society of Physical Medicine
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• v.8 no.3
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• pp.449-456
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• 2013

목적: 본 연구는 저강도 맥동 초음파적용이 흰쥐의 전층 상처 치유와 아교질 축적 및 아교질 mRNA발현에 미치는 영향을 규명할 목적으로 시행하였다. 방법: 12마리의 Sprague-Dawley계 흰쥐를 저강도 맥동 초음파군(n=6)과 대조군(n=6)에 무작위 배정하고 등에 $19.63mm^2$ 크기의 전층 적출 상처를 만든 다음 저강도 맥동 초음파군은 3 MHz, 순환주기 20%, SATA 강도 $0.4W/cm^2$로 1일 1회, 1회 5분씩 초음파를 적용하고, 대조군은 가짜 초음파를 적용하였다. 7일간 처치 후 초음파군과 대조군의 아교질 축적, 아교질 mRNA 발현, 상처치유율, 절반치유시간을 비교하였다. 결과: 초음파군의 아교질 축적(p<05)과 아교질 mRNA 발현(p<.01)이 대조군보다 유의하게 증가하였고, 상처치유율(p<.05)과 절반치유시간(p<.0)도 초음파군의 대조군보다 유의하게 빨랐다. 결론: 본 연구에서 전층 상처에 저강도 맥동 초음파를 적용한 결과 상처 치유가 촉진되었고 육아조직에 아교질 축적이 증가하였다. 이러한 결과는 맥동 초음파의 기계적 자극이 제 1형 아교질 mRNA 전사활동을 촉진시키는 것으로 사료된다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.424-430
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• 1998

Film characteristics of thin ONO dielectric layers for MONOS (metal-oxide-nitride-oxide-semiconductor) EEPROM was investigated by AES, SIMS, TEM and AFM. The ONO films with different dimension of tunneling oxide, nitride, and blocking oxide were fabricated. During deposition of the LPCVD nitride films on tunneling oxide, this thin oxide was nitrized. When the blocking oxide were deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of $SiO_2$(blocking oxide)/O-rich SiOxNy (interface)/ N-rich SiOxNy(nitride)/O-rich SiOxNy(tunneling oxide). In addition, the SiON phase is distributed mainly near the tunneling oxide/nitride and nitride/blocking oxide interfaces, and the $Si_2NO$ phase is distributed mainly at nitride side of each interfaces and in tunneling oxide.

• Transactions on Electrical and Electronic Materials
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• v.10 no.4
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• pp.131-134
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• 2009

The electrical properties and the microstructure of nitrogen-doped poly 3C-SiC films used for micro thermal sensors were studied according to different thicknesses. Poly 3C-SiC films were deposited by LPCVD (low pressure chemical vapor deposition) at $900^{\circ}C$ with a pressure of 4 torr using $SiH_2Cl_2$ (100%, 35 sccm) and $C_2H_2$ (5% in $H_2$, 180 sccm) as the Si and C precursors, and $NH_3$ (5% in $H_2$, 64 sccm) as the dopant source gas. The resistivity of the poly SiC films with a 1,530 ${\AA}$ thickness was 32.7 ${\Omega}-cm$ and decreased to 0.0129 ${\Omega}-cm$ at 16,963 ${\AA}$. The measurement of the resistance variations at different thicknesses were carried out within the $25^{\circ}C$ to $350^{\circ}C$ temperature range. While the size of the resistance variation decreased when the films thickness increased, the linearity of the resistance variation improved. Micro heaters and RTD sensors were fabricated on a $Si_3N_4$ membrane by using poly 3C-SiC with a 1um thickness using a surface MEMS process. The heating temperature of the SiC micro heater, fabricated on 250 ${\mu}m$${\times}$250 ${\mu}m$ $Si_3N_4$ membrane was $410^{\circ}C$ at an 80 mW input power. These 3C-SiC heaters and RTD sensors, fabricated by surface MEMS, have a low power consumption and deliver a good long term stability for the various thermal sensors requiring thermal stability.