• Journal of the Korean institute of surface engineering
• /
• v.53 no.2
• /
• pp.67-71
• /
• 2020

For deposition technology using plasma, it plays an important role in improving film deposited with high ionization rate through high density plasma. Various deposition methods such as high-power impulse magnetron sputtering and ion-beam sputtering have been developed for physical vapor deposition technology and are still being studied. In this study, it is intended to control plasma using inductive coupled plasma (ICP) antennas and use properties to improve the properties of Hafnium nitride (HfN) films using ICP assisted magnetron sputtering (ICPMS). HfN film deposited using ICPMS showed a finer grain sizes, denser microstructure and better mechanical properties as ICP power increases. The best mechanical properties such as nanoindentation hardness of 47 GPa and Young's modulus of 401 GPa was obtained from HfN film deposited using ICPMS at ICP power of 200 W.

• Journal of the Korean Ceramic Society
• /
• v.37 no.3
• /
• pp.263-270
• /
• 2000

The Pt/copper oxide/n-Si electrodes were fabricated by depositing copper oxide thin film of 500${\AA}$ and very thin Pt layer on the n-type (100) Si substrate. hotoelectrochemical properties and stability profiles of the electrodes were investigated as a function of deposition time of Pt layer. As the deposition time of Pt layer increased up to 10 seconds, the photocurrent and quantum efficiency were increased and then decreased with further depositing time. The better cell stability was observed for the electrode with longer deposition time. The improvements in above photoelectrochemical properties indicate that Pt layer acts as a catalyst layer at electrode/electrolyte interface as well as a protective layer. The decreasing tendency of the photocurrent and efficiency for the electrode with Pt layer deposited above 20 seconds was explained as an increases in probbility of electron-hole pair recombination and also the absorbing photon loss at electrode surface due to the excessive thickness of Pt layer. The results were confirmed by impedance spectroscopy, mutiple cycle voltammograms and microstructural analyses.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.64-65
• /
• 2005

The structural and electrical properties of the films are investigated as a function of nitrogen/argon ratio at room temperature and at various deposition temperatures. The phase changes as $Ta_2N$ or TaN in the films were observed as nitrogen/argon ratio increases from 3% to 25%. The phase changes were associated with a change in the resistivity and TCR (temperature coefficient of resistance) of the films. TCR values of the films deposited at room temperature and different nitrogen contents were negative, and strongly decreased with the increase in nitrogen/argon ratio. The Ta2N films deposited at nitrogen/argon ratio of 3% show improved TCR values and thermal stability with increasing deposition temperature. The $Ta_2N$ films grown at nitrogen/argon ratio of 3% and the temperature of $200^{\circ}C$ showed a TCR value of -47 $ppm/^{\circ}C$, which is close to near-zero TCR in the range of deposition temperature.

• Korean Journal of Materials Research
• /
• v.30 no.5
• /
• pp.262-266
• /
• 2020

In this paper, we investigated the effect of the passivation stack with Al₂O₃, hydrogenated silicon nitride (SiN_x:H) stack and Al₂O₃, silicon oxynitride (SiON_x) stack in the n type bifacial solar cell on monocrystalline silicon. SiNx:H and SiON_x films were deposited by plasma enhanced chemical vapor deposition on the Al₂O₃ thin film deposited by thermal atomic layer deposition. We focus on passivation properties of the two stack structure after laser ablation process in order to improve bifaciality of the cell. Our results showed SiN_x:H with Al₂O₃ stack is 10 mV higher in implied open circuit voltage and 60 ㎲ higher in minority carrier lifetime than SiON_x with Al₂O₃ stack at Ni silicide formation temperature for 1.8% open area ratio. This can be explained by hydrogen passivation at the Al₂O₃/Si interface and Al₂O₃ layer of laser damaged area during annealing.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.432-432
• /
• 2010

Organic light emitting diodes (OLED) thin films were fabricated by Electrostatic spray deposition (ESD). In this study, we reported the thickness, morphology, current efficiency, luminescence of OLED fabricated by ESD. These results were compared with the spin coating method, and showed that also ESD is a good fabrication method for OLED because of its characteristics similar with the results using spin coating. The active layer consists of organic blends with Poly(N-vinylcarbazole) (PVK), 2-(4-Biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD), N,N'-Bis(3-methylphenyl) -N,N'-bis(phenyl)-benzidine (TPD), Tris(2-phenylpyridine)iridium(III) (Ir(ppy)3), and the structure of OLED consists of aluminum (Al), lithium fluoride (LiF), organic blends, PEDOT:PSS and Indium-tin-oxide (ITO), which was used as the top cathode, cathode interfacial layer, emitting layer and bottom anode, respectively. The results suggest that Electrostatic spray deposition is a promising method for the next generation of OLED fabrication since it has a probability fabricating large-area thin films.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.13 no.2
• /
• pp.79-82
• /
• 2003

GaN nanoparticles were synthesized by the pulsed laser deposition (PLD) process on $SiO_2$substrate after irradiating the surface of the GaN sintered pellet by the ArF (193 nm) excimer laser. At this moment Ar gas pressure of 100 Pa, 50 Pa, 10 Pa and 1 Pa were applied during the ablation process and laser power of 100 mJ and 200 mJ were also applied. The synthesized fan nanoparticles were characterized by XRD, SEM, TEM, XPS and optical absorption spectra. The synthesized GaN nanoparticles had the crystallite sizes of 20~30 nm, and besides, GaN nanoparticles synthesized under low Ar gas pressure compared to the others corresponded with stoichiometry, and the optical band edge of the GaN nanoparticles was blueshifted.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.3
• /
• pp.318-326
• /
• 1996

This study is to investigate a chemical vapor deposition technique of copper film which is expected to be more useful as metallizations of microcircuit fabrication. An experimental equipment was designed and set-up for this study, and a Cu-precursor used that is a metal-organic compound, named (hfac)Cu(I)VTMS ; (hevaflouoroacetylacetonate trimethyvinylsilane copper). Base pressure of the experimental system is in $10^{-6}$ Torr, and the chamber pressure and the substrate temperature can be controlled in the system. Before the deposition of copper thin film, tungsten or titanium nitride film was deposited onto the silicon wafer. Helium has been used as carrier gas to control the deposition rate. As a result, deposition rate was measured as $1,800\;{\AA}/min$ at $220^{\circ}C$ which is higher than the results of previous studies, and the average surface roughness was measured as about $200\;{\AA}$. A deposition selectivity was observed between W or TiN and $SiO_{2}$ substrates below $250^{\circ}C$, and optimum results are observed at $180^{\circ}C$ of substrate temperature and 0.8 Torr of chamber pressure.

• Proceedings of the IEEK Conference
• /
• 2000.06b
• /
• pp.318-321
• /
• 2000

We showed that the change of Ar to $N_2$flow during the TiN deposition by the reactive sputtering decides the crystallinity of LPCVD W, as well as the electrical properties of the W-TiN/SiO$_2$Si capacitor. In particular, the threshold voltage can be controlled by the Ar to $N_2$ratio. As compared to the results obtained from the LPCVD W/SiO$_2$/Si MOS capacitor, the insertion of approximately 50 nm TiN film effectively prohibits the fluorine diffusion during the deposition and annealing of W films, resulting in negligible leakage currents at the low electric fields.

• The Journal of Korean Academy of Prosthodontics
• /
• v.45 no.6
• /
• pp.769-779
• /
• 2007

Statement of problem. When TiN coating is applied to the abutment screw, occurrence of greater preload and prevention of the screw loosening could be expected due to decrease of frictional resistance. However, the proper thickness of TiN coating on abutment screw has not been yet reported. Purpose. The purpose of this study is to find out the appropriate TiN coating thickness by evaluating the detorque force and the surface change of titanium abutment screw with various TiN coating thickness. Material and methods. 1. Material Thirty five non-coated abutment screws were prepared for TiN coating. TiN coatings were prepared by Arc ion plating method. Depending on the coating deposition time(CDT), experimental groups were divided into 6 groups(CDT 30min, 60min, 90min, 120min, 150min, 180min) and those of 1 group was not coated as a control group. Each group was made up of 5 abutment screws. 2. Methods FE-SEM(Field Emission Scanning Electron Microscoper) and EDX(Energy Dispersive X-ray Spectroscopy) were used to observe the surface of the abutment screw. Electric scales was used to measure the weight of the abutment screw after the repeated closing and opening of 10 trials. Detorque force was measured with digital torque gauge, at each trial. Results. 1. As the coating deposition time increased, the surface became more consistent and smooth. 2. As for the abutment screws that were TiN coated for more than 60 minutes, no surface change was found after the repeated closing and opening. 3. The TiN coated abutment screws showed less weight change than the non-coated abutment screws. 4. The TiN coated abutment screws showed higher mean detorque force than the noncoated abutment screws. 5. The abutment screw coated for 60 minutes showed the highest mean detorque force. Conclusion. The coating layer of proper thickness is demanded to obtain consistent and smooth coating surface, resistance to wear, and increased detorque force of the abutment screw. In conclusion, the coating deposition time of 60 minutes indicated improved mechanical property, when TiN coating was conducted on titanium abutment screw.

• Journal of the Korean Ceramic Society
• /
• v.54 no.6
• /
• pp.511-517
• /
• 2017

With different working pressures and substrate biases, Cr-Al-N coatings were deposited by hybrid physical vapor deposition (PVD) method, consisting of unbalanced magnetron (UBM) sputtering and arc ion plating (AIP) processes. Cr and Al targets were used for the arc ion plating and the sputtering process, respectively. Phase analysis, and composition, binding energy, and microstructural analyses were performed using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and field emission scanning electron microscopy (FESEM), respectively. Surface droplet size of Cr-Al-N coatings was found to decrease with increasing substrate bias. A decrease of the deposition rate of Cr-Al-N films was expected due to the increase of substrate bias. The coatings were grown with textured CrN phase and (111), (200), and (220) planes. X-ray diffraction data show that all Cr-Al-N coatings shifted to lower diffraction angles due to the addition of Al. The XPS results were used to determine the $Cr_2N$, CrN, and (Cr,Al)N binding energies. The compositions of the Cr-Al-N films were measured by XPS to be Cr 23.2~36.9 at%, Al 30.1~40.3 at%, and N 31.3~38.6 at%.