• Applied Science and Convergence Technology
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• v.26 no.4
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• pp.79-85
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• 2017

The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.20-20
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• 2003

We developed 30 ㎽-AlInGaN based violet laser diodes. The fabrication procedures of the laser diodes are described as follows. Firstly, GaN layers having very low defect density were grown on sapphire substrates by lateral epitaxial overgrowth method. The typical dislocation density was about 1-3$\times$10$^{6}$ /$\textrm{cm}^2$ at the wing region. Secondly, AlInGaN laser structures were grown on LEO-GaN/sapphire substrates by MOCVD. UV activation method, instead of conventional annealing, was conducted to achieve good p-type conduction. Thirdly, ridge stripe laser structures were fabricated. The cavity mirrors were formed by cleaving method. Three pairs of SiO$_2$ and TiO$_2$ layers were deposited on the rear facet for mirror coating. Lastly, laser diode chips were mounted on AlN submount wafers by epi-down bonding method. The lifetime of the laser diodes was over 10,000 hrs at room temperature under automatic power controlled condition. We expect the performance of the LDs to be improved by the optimization of the growth and fabrication process. The detailed characteristics and important issues of the laser diodes will be discussed at the conference.

• Korean Journal of Optics and Photonics
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• v.13 no.2
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• pp.146-150
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• 2002

1.55${\mu}{\textrm}{m}$ PnpN optical thyristor as a smart optical switch has potential applications in advanced optical communication systems. PnpP optical thyristors operating at 1.55${\mu}{\textrm}{m}$ are proposed and fabricated for the first time. In the optical thyristors, we employ InGaAs/InP multiple quantum well (MQW) for the active n- and p-layers. The thyristors show sufficiently nonlinear s-shape I-V characteristics and spontaneous emission. In the OFF-state, the device has a high-impedance up to switching voltage of 4.03(V). On the other hand, it has low-impedance and emits spontaneous light as a light-emitting diode in the ON-state voltage of 1.77(V), and switching voltage is changed under several light input conditions. It can be used as a header processor in optical asynchronous transfer mode (ATM), as a hard limiter in optical code division multiple access (CDMA) and as a wavelength converter in optical WDM systems.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.

• Journal of the Korean Vacuum Society
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• v.20 no.4
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• pp.288-293
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• 2011

We investigated the effects of piezoelectric field on the electro-absorption characteristics in InGaN/GaN multiple-quantum well (MQW) green light emitting diodes (LED). Double crystal X-ray diffraction measurement was performed to study the crystalline property and indium (In) composition in the MQW active layer. To measure the electro-luminescence and electro-reflectance (ER) spectroscopy, we fabricated the $1{\times}1\;mm^2$ large-area green LED chip. The piezoelectric field inside the LED structure was evaluated from the Vcomp in active layer by the ER spectra. Finally, we analyzed the electro-absorption characteristics of the green LED by using the photo-current spectroscopy.

• Analytical Science and Technology
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• v.11 no.1
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• pp.73-78
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• 1998

The reverse detection heteronuclear multiple quantum coherence, HMQC study of metcyano complex of horse myoglobin(MbCN) has provided the complete assignment of hyperfine shifted resonances of heme carbons attached with proton(s). The application of HMQC experiment to the paramagnetic low-spin MbCN gives clear $^1H$ and $^{13}C$ coherences for the paramagnetic amino acid residues as well as heme side chains, and can be extended to the low-spin paramagnetic hemoprotein derivative for the assignment of natural abundance $^{13}C$ resonances. This assignment strategy can avoid possible ambiguities that may result from the sole utilization of $^1H$ nuclear Overhauser effect for the assignment of heme $^1H$ signals resonating in the diamagnetic region. The resulting 2,4-vinyl ${\alpha}$-carbons and 7-propionate ${\beta}$-carbon follow anomalous anti-Curie behavior, and are indicative of incoplanarity with heme plane. Magnetic/electronic asymmetry of heme induced by proximal histidine(His) makes spread that the hyperfine shifted heme carbon resonances over the range of 250 ppm at $25^{\circ}C$. These heme carbon resonances would be the much more sensitive probe than those of proton resonances in analyzing the nature of heme electronic structure of myoglobin.

• Progress in Medical Physics
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• v.19 no.1
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• pp.63-72
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• 2008

With recent advancement of the medical imaging systems and picture archiving and communication system (PACS), installation of digital radiography has been accelerated over past few years. Moreover, Computed Radiography (CR) which was well established for the foundation of digital x-ray imaging systems at low cost was widely used for clinical applications. This study analyzes imaging characteristics for two systems with different pixel sizes through the Modulation Transfer Function (MTF), Noise Power Spectrum (NPS) and Detective Quantum Efficiency (DQE). In addition, influence of radiation dose to the imaging characteristics was also measured by quantitative assessment. A standard beam quality RQA5 based on an international electro-technical commission (IEC) standard was used to perform the x-ray imaging studies. For the results, the spatial resolution based on MTF at 10% for Agfa CR system with I.P size of $8{\times}10$ inches and $14{\times}17$ inches was measured as 3.9 cycles/mm and 2.8 cycles/mm, respectively. The spatial resolution based on MTF at 10% for Fuji CR system with I.P size of $8{\times}10$ inches and $14{\times}17$ inches was measured as 3.4 cycles/mm and 3.2 cycles/mm, respectively. There was difference in the spatial resolution for $14{\times}17$ inches, although radiation dose does not effect to the MTF. The NPS of the Agfa CR system shows similar results for different pixel size between $100{\mu}m$ for $8{\times}10$ inch I.P and $150{\mu}m$ for $14{\times}17$ inch I.P. For both systems, the results show better NPS for increased radiation dose due to increasing number of photons. DQE of the Agfa CR system for $8{\times}10$ inch I.P and $14{\times}17$ inch I.P resulted in 11% and 8.8% at 1.5 cycles/mm, respectively. Both systems show that the higher level of radiation dose would lead to the worse DQE efficiency. Measuring DQE for multiple factors of imaging characteristics plays very important role in determining efficiency of equipment and reducing radiation dose for the patients. In conclusion, the results of this study could be used as a baseline to optimize imaging systems and their imaging characteristics by measuring MTF, NPS, and DQE for different level of radiation dose.