• 한국전기전자재료학회논문지
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• 제19권9호
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• pp.813-817
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• 2006

In this paper, we analyzed the breakdown voltage and on-resistance of the multi-RESURF SOI LDMOSFET as a function of epi-layer concentration. P-/n-epi layer thickness and doping concentration of the proposed structure are varied from $2{\sim}5{\mu}m\;and\;1\{times}10^{15}/cm^{3}^{\sim}9\{times}10^{15}/cm^{3}$ to find optimum breakdown voltage and on-resistance of the proposed structure. The maximum breakdown voltage of the proposed structure is $224\;V\;at\;R_{on}=0.2{\Omega}-mon^{2}\;with\;P_{epi}=3\{times}10^{15}/cm^{3},\;N_{epi}=7\{times}10^{15}/cm^{3}\;and\;L_{epi}=10{\mu}m$. Characteristics of the device are verified by two-dimensional process simulator ATHENA and device simulator ATLAS.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1578-1580
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• 2002

The breakdown and on-state characteristics of the multi-RESURF SOI LDMOSFET is presented. P-/n-epi layer thickness and doping concentration is varied from $2{\mu}m{\sim}5{\mu}m$ and $1{\times}10^{15}/cm^3{\sim}9{\times}10^{15}/cm^3$ to obtain optimum breakdown voltage and on-resistance. The breakdown and on-state characteristics of the device is verified by two-dimensional process simulator ATHENA and device simulator ATLAS.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.156-158
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• 2002

Reduction of on-resistance($R_{on}$) in high voltage devices is of critical importance for the power consumption of the device. $R_{on}$ decreases with increase of the doping concentration of the drift region. However, breakdown voltage(BV) decreaes also with increase of doping concentration. In this report, a multi-resurf LDMOS[1] strcuture is proposed to reduce the $R_{on}$ which allows no degradation in BV. The on-and off-state characteristics of the proposed structure are simulated using the two-dimensional devices simulator ATLAS and compared with those from the conventional structure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.365-368
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• 2004

Charge compensation effects in multi-resurf structure make possible to obtain high breakdown volatage and low on-resistance in vertical MOSFET. In this paper, electrical characteristics of the vertical MOSFET with multi epitaxial layer is presented. Proposed device has n and p-pillar for obtaining the charge compensation effects and The doping concentration each pillar is varied from $5{\times}10^{14}\;to\;1{\times}10^{16}/cm^3$. The thickness of the proposed device also varied from $400{\mu}m\;to\;500{\mu}m$. Due to the charge compensation effects, 4500V of breakdown voltage can be obtained.