• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.715-718
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• 2004

In this paper, we studied the characteristics of new polishing pad, which can apply W-CMP process for global planarization of multi-level interconnection structure. The hardness and density were measured as a function of groove pattern. Also, we compared the pore size through the SEM photograph. Finally, we investigated the CMP characteristics with five different kind of groove pattern sample. Through the above results, we can select optimum groove pattern, so we can expect to begin home product of polishing pad.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1267-1268
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry (MAS). In order to save the costs of slurry, the original silica slurry was diluted by do-ionized water (DIW). And then, $ZrO_2,CeO_2$, and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1271-1272
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• 2006

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40%. So, we focused how to reduce the consumption of raw slurry. In this paper, $ZrO_2$, $CeO_2$, and $MnO_2$ abrasives were added de-ionized water (DIW) and pH control as a function of KOH contents. We have investigate the possibility of new abrasive for the oxide CMP application.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.85-86
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables arc relatively high because of expensive slurry. In this paper, in order to save the costs of slurry, the original silica slurry was diluted by de-ionized water (DIW). And then, $ZrO_2$, abrasives were added in the diluted silica slurry (DSS) in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry (MAS) for the oxide CMP application.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.81-82
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, so as to investigate the influence of mixed abrasive slurry (MAS), such as $ZrO_2$, $CeO_2$, and $MnO_2$ for Ti-CMP application.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.83-84
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• 2006

Chemical mechanical polishing (CMP) process has been attracted as an essential technology of multi-level interconnection. However, the COO (cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper, $MnO_2$ abrasives were added de-ionized water (DIW) and pH control as a function of KOH contents. Also, the addition effects of $MnO_2$ abrasives and the diluted silica slurry (DSS) on CMP performances were evaluated. Finally, we have investigated the possibility of new abrasive for the oxide CMP application.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1727-1728
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry(MAS). In order to save the costs of slurry, the original silica slurry was diluted by do-ionized water (DIW). And then, $ZrO_2$,$CeO_2$, and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1731-1732
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• 2006

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, slurry dominates more than 40 %. So, we focused how to reduce the consumption of raw slurry. In this paper, $ZrO_2$, $CeO_2$, and $MnO_2$ abrasives were added de-ionized water (DIW) and pH control as a function of KOH contents. We have investigate the possibility of new abrasive for the oxide CMP application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.707-710
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• 2004

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). In this paper, we have investigated slurry properties and CMP performance of silicon dioxide (oxide) as a function of different temperature of slurry. Thermal effects on the silica slurry properties such as pH, particle size, conductivity and zeta potential were studied. Moreover, the relationship between the removal rate (RR) with WIWNU and slurry properties caused by changes of temperature were investigated. Therefore, the understanding of these temperature effects provides a foundation to optimize an oxide CMP Process for ULSI multi-level interconnection technology.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.1B
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• pp.73-85
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• 2004

SIn this paper, we introduce our experience for designing and implementing new concept of a global XML-based Peer-to-Peer (P2P) engine to support various P2P applications, and interconnection among PC, Web and mobile computing environments. The proposed P2P engine can support to heterogeneous data exchanges and web interconnection by facilitating with the text-base XML while message exchange are necessary. It is also to provide multi-level security functions as well as to apply different types of security algorithms. The system consist of four modules; a message dispatcher to scheduling and filtering the message, a SecureNet to providing security services and data transmission, a Discovery Manager to constructing peer-to-peer networking, and a Repository Manager to processing data management including XML documents. As a feasibility test, we implement various P2P services such as chatting as a communication service, white-board as an authoring tool set during collaborative working, and a file system as a file sharing service. We also compared the proposed system to a Gnutella in order to measure performance of the systems.