Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.11a
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- Pages.707-710
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- 2004
Characteristic of Oxide CMP with the Various Temperatures of Silica Slurry
실리카 슬러리의 온도 변화에 따른 산화막의 CMP 특성
- Ko, Pil-Ju (Chosun Univ.) ;
- Park, Sung-Woo (Daebul Univ.) ;
- Kim, Nam-Hoon (Chosun Univ., RIERT) ;
- Seo, Yong-Jin (Chung-Ang Univ.) ;
- Chang, Eui-Goo (Daebul Univ.) ;
- Lee, Woo-Sun (Chosun Univ.)
- 고필주 (조선대 전기공학과) ;
- 박성우 (대불대 전기전자공학과) ;
- 김남훈 (조선대 에너지자원신기술연구소) ;
- 장의구 (중앙대 전자전기공학부) ;
- 서용진 (대불대 전기전자공학과) ;
- 이우선 (조선대 전기공학과)
- Published : 2004.11.11
Abstract
Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). In this paper, we have investigated slurry properties and CMP performance of silicon dioxide (oxide) as a function of different temperature of slurry. Thermal effects on the silica slurry properties such as pH, particle size, conductivity and zeta potential were studied. Moreover, the relationship between the removal rate (RR) with WIWNU and slurry properties caused by changes of temperature were investigated. Therefore, the understanding of these temperature effects provides a foundation to optimize an oxide CMP Process for ULSI multi-level interconnection technology.