• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.983-989
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• 2005

[ $PZT(Pb(Zr,Ti)O_3)$ ] thin films were deposited by multi-target reactive sputtering method on $RuO_2$ substrates. Pure perovskite phase PZT films could be obtained by introducing Ti-oxide seed layer on the $RuO_2$ substrates prior to PZT film deposition. The PZT films deposited on the $RuO_2$ substrates showed highly voltage-shifted hysteresis loop compared with the films deposited on the Pt substrates. The surface of $RuO_2$ substrate was found to be reduced to metallic Ru in vacuum at elevated temperature, which caused the formation of oxygen vacancies at the initial stage of PZT film deposition and gave rise to the voltage shift in the P-E hysteresis loop of the PZT capacitor. The fatigue characteristics of the PZT capacitors under unipolar wane electric field were different from those under bipolar wane. The fatigue test under unipolar wane showed the increase of polarization. It was thought that the ferroelectric domains which had been pinned by charged defects such as oxygen vacancies and the charged defects were reduced in number by combining with the electrons injected from the electrode under unipolar wave, resulting in the relaxation of the ferroelectric domains and the increase of polarization.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.4
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• pp.176-179
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• 2005

The increasing demand for high density packaging technologies and the evolution to mixed digital and analogue devices has been the con-set of increasing research in thin film multi-layer technologies such as the passive components integration technology. In this paper, Cu and TaO thin film with RF sputtering was deposited for spiral inductor and MOM capacitor on the $SiO_2$/Si(100) substrate. MOM capacitor and spiral inductor were fabricated for L-C band pass filter by sputtering and lift-off. We are analyzed and designed thin films L-C passive components for band pass filter at 900 MHz and 1.8 GHz, important devices for mobile communication system. Based on the high-Q values of passive components, MOM capacitor and spiral inductors for L-C band pass filter, a low insertion loss of L-C passive components can be realized with a minimized chip area. The insertion loss was 3 dB for a 1.8 GHz filter, and 5 dB for a 900 MHz filter. This paper also discusses a analysis and practical design to thin-film L-C band pass filter.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.2
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• pp.15-22
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• 2013

Low-Temperature-cofired ceramics (LTCC) antenna packages have been extensively researched and utilized in recent years due to its excellent electrical properties and ease of implementing dense package integration topologies. This paper introduces some of the key research and development activities using LTCC packaging solutions for 60 GHz antennas at Samsung Electronics [1]. The LTCC 60 GHz antenna element topology is presented and its measured results are illustrated. However, despite its excellent performance, the high cost issues incurred with LTCC at millimeter wave (mmWave) frequencies for antenna packages remains one of the key impediments to mass market commercialization of mmWave antennas. To address this matter, for the first time to the author's best knowledge this paper alleviates the high cost of mmWave antenna packaging by devising a novel, broadband antenna package that is wholly based on low-cost, high volume FR4 Printed Circuit Board (PCB). The electrical properties of the FR4 substrate are first characterized to examine its feasibility at 60 GHz. Afterwards a compact multi-layer antenna package which exhibits more than 9 GHz measured bandwidth ($S_{11}{\leq}-10$ dB) from 57~66 GHz is devised. The measured normalized far-field radiation patterns and radiation efficiency are also presented and discussed.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.417-422
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• 2002

ZnO thin films were deposited on various substrates, such as Si-(111), SiO$_2$(5000 $\AA$ by thermal CVD)/Si-(100), and SiO$_2$(2000 $\AA$ by RF sputtering)/Si-(100). The (002)-orientation, surface morphology and roughness, and electrical resistivity of deposited films were measured and compared in terms of substrate. Surface acoustic wave(SAW) filters with a multilayered configuration of IDT/ZnO/SiO$_2$/Si were also fabricated and the IDT was obtained using a lift-off method. From the frequency-response characteristics of fabricated devices, the insertion loss and side-lobe rejection were estimated. The experimental results showed that the (002)-oriented growth nature of ZnO films, which played a crucial role of determining the characteristic of SAW device, was strong1y dependent upon the SiO$_2$buffer.

• Journal of Surface Science and Engineering
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• v.43 no.3
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• pp.127-131
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• 2010

Adhesion of DLC film is very significant property that exhibits wear resistance, chemical inertness and high hardness when being deposited to metal substrate. This study was considered that change adhesion of DLC film produced by Plasma Enhanced Chemical Vapor Deposition can be presented through inserting interlayer (Cr, Si-C:H). The thickness of interlayer was result of changing adhesion and residual stress. It was showed that the maximum 12 N of adhesion is on DLC film of Cr interlayer, and that a tendency is to be increased residual stress depend on the thickness. DLC film of Si-C:H interlayer represented 16 N of adhesion at $1{\mu}m$, whereas adhesion is decreased when the thickness is increased. For the interlayer at multi-layer, it was the best that adhesion of Cr/Si-C:H/DLC film was 33 N. Si-C:H interlayer at DLC film controled adhesion of the whole film. It was relaxed the internal stress of DLC film produced by inserting Cr, Si-C:H interlayer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.361-364
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• 2003

It was investigated that the structural and electrical Properties of Ce-doped Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$ (BCZT) thin films with a mole fraction of x=0.2 and a thickness about 100 nm. BCZT films were prepared on Pt/Ti/SiO$_2$/Si substrate by a RF magnetron sputtering system. We have measured the thickness profile with Ar/O$_2$ ratio and the surface roughness. It was observed that the oxygen gas, which introduced during the film deposition, have an influence on the roughness of the film and the film roughness was reduced by annealing from 2.33 nm to 2.02 nm (RMS at 500 $^{\circ}C$, Ar:6 sccm, $O_2$:6 sccm). It was found that annealing procedure after top electrode deposit can reduce the dissipation factor.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.10
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• pp.1052-1059
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• 2003

In this paper, we proposed the directional coupler using two layer microstrip substrate which is improved coupling and isolation. Also, we notified a design method. Modified re-entrant mode coupler is the structure added to the aperture on the ground plane in order to improving the coupling value. And, by adding to slits on the floating conductor, this structure has good performance in isolation, VSWR according to S$\sub$11/, and phase difference. As a result, proposed re-entrant mode microstrip directional coupler has about 1.5 dB more higher coupling and 20 dB more higher isolation than conventional coupler. And because this coupler has good performance in phase difference, it can be used multi-section coupler.

• Bulletin of the Korean Chemical Society
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• v.25 no.5
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• pp.687-693
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• 2004

Composite membranes with a titania layer were prepared by soaking-rolling method with the titania sol of nanoparticles formed in the sol-gel process and investigated regarding the vapor permeation of various organic mixtures. The support modification was conducted by pressing $SiO_2$ xerogel of 500 nm in particle size under 10 MPa on the surface of a porous stainless steel (SUS) substrate and designed the multi-layered structure by coating the intermediate layer of ${\gamma}-Al_2O_3$. Microstructure of titania membrane was affected by heat-treatment and synthesis conditions of precursor sol, and titania formed at calcination temperature of 300$^{\circ}C$ with sol of [$H^+$]/[TIP]=0.3 possessed surface area of 210 $m^2$/g, average pore size of 1.25 nm. The titania composite membrane showed high $H_2/N_2$ selectivity and water/ethanol selectivity as 25-30 and 50-100, respectively. As a result of vapor permeation for water-alcohol and alcohol-alcohol mixture, titania composite membrane showed water-permselective and molecular-sieve permeation behavior. However, water/methanol selectivity of the membrane was very low because of chemical affinity of permeants for the membrane by similar physicochemical properties of water and methanol.

• Journal of Bio-Environment Control
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• v.26 no.3
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• pp.194-200
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• 2017

This study aimed to determine the suitable of harvest time on the growth and quality of baby leafy vegetables (Agastsche rugosa O. Kuntze and Lepidium sativum L.) grown on rice seedling tray in a six-layered bench system at 30cm intervals in order to exploit the space during rice growing off-season. Seedlings were grown on the rice seedling tray for 10 days after sowing with coir substrate supplied with nutrient solution at EC $1.5dS{\cdot}m^{-1}$ every 2 days prior to placing the tray on the bench, which were at $1^{st}$ (Low) layer above 20cm and $6^{th}$ (High) layer above 170cm apart from the ground. Growth and phytochemical contents were measured at 7-day and 14-day harvest time. During the culture periods, daily average of integrated solar radiation and temperature were $9.3{\sim}9.6MJ{\cdot}m^{-2}$, $27.5^{\circ}C$ in the High layer and $5.1{\sim}6.2MJ{\cdot}m^{-2}$ in average, and $26.5{\sim}26.6^{\circ}C$ in the Low layer, respectively. For A. rugosa, the highest growth was observed in the Low layer bench at a 14-day harvest time, while their plant height in the High layer was shorter and the leaf number was lower. For L. sativum, the plant height, leaf length and width, leaf number and fresh weight were higher in the Low layer. For A. rugosa, a high yield was observed with the increase in integrated temperature and integrated solar radiation, while a higher yield of L. sativum was found with the increase in integrated temperature, but not with integrated solar radiation. For A. rugosa, both polyphenol and anthocyanin contents were higher in the High layer at a 14-day harvest time. For L. sativum, polyphenol contents were higher in the High layer, whereas no significant difference in anthocyanin and flavonoid contents was observed depending on the layer and harvest time. The highest chlorophyll content showed in Low layer at a 7-day harvest time in both A. rugose and L. sativum. All of the results suggest that in terms of growth and quality, it may be better growing in the high layer for 14 days after seedling in A. rugosa, and low layer for 7 days in L. sativum.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.52-57
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• 2010

$BiFeO_3/Pb(Zr_{0.52}Ti_{0.48})O_3$(BFO/PZT) multilayer thin films have been prepared on a Pt/Ti/$SiO_2$/Si(100) substrate by chemical solution deposition. BFO single layer, BFO/PZT bilayer and multilayer thin films were studied for comparison. X-ray diffraction analysis showed that the crystal structure of all films was multi-orientated perovskite phase without amorphous and impurity phase. The leakage current density at 500 kV/cm was reduced by approximately four and five orders of magnitude by bilayer and multilayer structure films, compared with BFO single layer film. The low leakage current density leads to saturated P-E hysteresis loops of bilayer and multilayer films. In BFO/PZT multlayer film, saturated remanent polarization of $44.3{\mu}C/cm^2$ was obtained at room temperature at 1 kHz with the coercive field($2E_c$) of 681.4 kV/cm.