• Proceedings of the KAIS Fall Conference
• /
• 2010.05a
• /
• pp.18-23
• /
• 2010

4$\times$4 Butler Matrix structure has been presented in this paper. It can passes the signal with equal power level and phase difference in the 824MHz to 894MHz frequency of the cellular band. Conventional Butler Matrix was implemented as a single layer substrate structure, but in this paper, we use multi-layer substrate structure and eventually we could get it reduced in size than others. We also used the LTCC coupler to reduce the size effectively, instead of using $90^{\circ}$ hybrid coupler composed of microstrip structure. we used Designer V3.5 Ansoft HFSS V11 for design of 4$\times$4 Butler matrix. Finally, we get good agreements between simulation and experimental results.

• Journal of the Microelectronics and Packaging Society
• /
• v.6 no.4
• /
• pp.1-7
• /
• 1999

We developed Fabrication process of embedded passive components in MCM-D substrate. The proposed MCM-D substrate is based on Cu/photosensitive BCB multilayer. The substrate used is Si wafer and Ti/cu metallization is used to form the interconnect layer. Interconnect layers are formed with 1000$\AA$ Ti/3000$\AA$ Cu by sputtering method and 3$\mu\textrm{m}$ Cu by electrical plating method. In order to form the vias in photosensitive BCB layer, the process of BCB and plasma etch using $C_2F_6$ gas were evaluated. The MCM-D substrate is composed of 5 dielectric layers and 4 interconnect layers. Embedded resistors are made with NiCr and implemented on the $2^{nd}$ dielectric layer. The sheet resistance of NiCr is controlled to be about 21 $\Omega$/sq at the thickness of 600$\AA$. The multi-turn sprial inductors are designed in coplanar fashion on the $4^{th}$ interconnect layer with an underpass from the center to outside using the lower $3^{rd}$ interconnect layer. Capacitors are designed and realized between $1^{st}$ interconnect layer and $2^{nd}$ interconnect layer. An important issue in capacitor is the accurate determination of the dielectric thickness. We use the 900$\AA$ thickness of PECVD silicon nitride film as dielectric. Capacitance per unit area is about 88nF/$\textrm {cm}^2$at the thickness of 900$\AA$. The advantage of this integration process is the compatibility with the conventional semiconductor process due to low temperature PECVD silicon nitride process and thermal evaporation NiCr process.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.257-257
• /
• 2010

One of the critical issues for applications of flexible organic thin film transistors (OTFTs) for flexible electronic systems is the electrical stabilities of the OTFT devices, including variation of the current on/off ratio ($I_{on}/I_{off}$), leakage current, threshold voltage, and hysteresis, under repetitive mechanical deformation. In particular, repetitive mechanical deformation accelerates the degradation of device performance at the ambient environment. In this work, electrical stabilities of the pentacene organic thin film transistors (OTFTs) employing multi-stack hybrid encapsulation layers were investigated under mechanical cyclic bending. Flexible bottom-gated pentacene-based OTFTs fabricated on flexible polyimide substrate with poly-4-vinyl phenol (PVP) dielectric as a gate dielectric were encapsulated by the plasma-deposited organic layer and atomic layer deposited inorganic layer. For cyclic bending experiment of flexible OTFTs, the devices were cyclically bent up to $10^5$ times with 5mm bending radius. In the most of the devices after $10^5$ times of bending cycles, the off-current of the OTFT with no encapsulation layers was quickly increased due to increases in the conductivity of the pentacene caused by doping effects from $O_2$ and $H_2O$ in the atmosphere, which leads to decrease in the $I_{on}/I_{off}$ and increase in the hysteresis. With encapsulation layers, however, the electrical stabilities of the OTFTs were improved significantly. In particular, the OTFTs with multi-stack hybrid encapsulation layer showed the best electrical stabilities up to the bending cycles of $10^5$ times compared to the devices with single organic encapsulation layer. Changes in electrical properties of cyclically bent OTFTs with encapsulation layers will be discussed in detail.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.341-341
• /
• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 1994.04c
• /
• pp.6-6
• /
• 1994

Har dmaterials such as cemented carbides with or without coated layer, cermets, ceramics and diamond or c-BN high pressure sintered compact are used for cutting tools, wear -resistant parts, rock drilling bits and/or high pressure vessels. These hardmaterials contain not only hard phase, but also second consituent as the element for forming ductile phase and/or sintering aid, and the mechanical properties of each material depend on (1) the amount of the second constituent as well as (2) the grain size of the hard phase. The hardness of each material mainly depends on these two factors. The fracture strength, however, largely depends on other microstructur a1 factors as well as the above two factors. For all hardmaterials, the fracture strength is consider ably affected by (3) the size of microstructur a1 defect which acts as the fracture source. In cemented carbides, the following factors which are generated mainly due to the addition of the second constituent are also important; (4) the variation of the carbon content in the normal phase region free from V-phase and graphite phase, (5) the precipitation of $Co_3$ during heating at about $800^{\circ}C$,(6) the domain size of binder phase, and (7) the formation of ${\beta}$-free layer or Co-rich layer near the surface of sintered compacts. For cemented carbides coated with thin hard substance, the important factors are as follows; (8) the kind of coated substance, (9) the formation of ${\eta}$-phase layer at the interface between coated layer and substrate, (10) the type of residual stress (tension or compression) in the coated layer which depends on the kind of coating method (CVD or PVD), and (11) the properties of the substrate, and (12) the combination, coherency and periodicity of multi-layers. In the lecture, the details of these factors and their effect on the strength will be explained.

• Transactions on Electrical and Electronic Materials
• /
• v.16 no.5
• /
• pp.264-267
• /
• 2015

AlCrNO cermet films were prepared on aluminum substrates using a DC-reactive magnetron sputtering method and a water-cooled Al:Cr target. The Al₂O₃/AlCrNO (LMVF)/AlCrNO (MMVF)/AlCrNO (HMVF)/Al/substrate of the 5 multi-layers was prepared according to the Ar and (N₂ + O₂) gas-mixture rates. The Al₂O₃ of the top layer is the anti-reflection layer of triple AlCrNO (LMVF)/AlCrNO (MMVF)/AlCrNO (HMVF) layers, and an Al metal forms the infrared reflection layer. In this study, the crystallinity and surface properties of the AlCrNO thin films were estimated using X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM), while the composition of the thin films was systematically investigated using Auger electron spectroscopy (AES). The optical properties of the wavelength spectrum were recorded using UH4150 spectrophotometry (UV-Vis-NIR) at a range of 0.3 μm to 2.5 μm.

• Laser Solutions
• /
• v.14 no.3
• /
• pp.7-11
• /
• 2011

As an active emission display using emissive polymer has had much attention recently, needs for a selective patterning of emissive layer for those displays have been increased abruptly. Therefore, the various laser sources in terms of its wavelength has been used for laser direct patterning. In this work, the feasibility of those processes is examined using numerical analysis and the experimental investigation. A sample has multi-layered structure, emissive polymer on aluminum which is deposited on a glass substrate. Key factors for optimizing the laser patterning of the emissive polymer are considered into the control of ablation products, large-sized particle, and the choice of the appropriate wavelength for minimizing the heat affected zone and the remnant layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.6
• /
• pp.546-549
• /
• 2007

As a rule, high temperature superconducting coated conductors have multi-layered buffers consisting of seed, diffusion barrier and cap layers. Multi-buffer layer deposition requires longer fabrication time. This is one of main reasons which increases fabrication cost. Thus, single buffer layer deposition seems to be important for practical coated conductor process. In this study, a single layered buffer deposition of $CeO_2$ for low cost coated conductors has been tried using thermal evaporation technique. 100 nm-thick $CeO_2$ layers deposited by thermal evaporation were found to act as a diffusion layer. $1\;{\mu}m-thick$ SmBCO superconducting layers were deposited by thermal co-evaporation on the $CeO_2$ buffered Ni-5%W substrate. Critical current of 90 A/cm was obtained for the SmBCO coated conductors.

• Progress in Superconductivity and Cryogenics
• /
• v.24 no.4
• /
• pp.29-35
• /
• 2022

We fabricated MHOS (multi-HTS layers on one substrate) high-temperature superconducting (HTS) REBCO conductors using HTS REBCO coated conductor (CC) A-specimen, which induces an artificial magnetic flux pinning effect, and HTS REBCO CC B-specimen, that does not induce this effect. The superconducting magnetic properties of the fabricated MHOS conductors were examined by measuring their magnetic moment m(H) curves using a physical property measurement system (QD PPMS-14). The critical current density (J_c) characteristics of our four-layered MHOS HTS REBCO conductor specimens such as BAAB, BBBB, and AAAA were lower than those of their two-layered and three-layered counterparts. At a temperature T of 30 K the magnetic flux pinning physical indicator δ values (obtained from the relationship J_c ∝ H^-δ) of the three-layer ABA (δ = 0.35) and two-layer AB (δ = 0.43) specimens were found to be significantly lower than those of the four-layer ABBA (δ = 0.51), BAAB (δ = 0.60), AAAA (δ = 0.78) and BBBB (δ = 0.81) structures.

• Journal of the Korean Ceramic Society
• /
• v.35 no.12
• /
• pp.1257-1265
• /
• 1998

Hertzian contact tests were used to investigate the evolution of fracturedamage in the coating layer as functions of contact load and coating thickness by studying crack patterns in porcelain on glass-infiltrated alumina bilayer system conceived to simulate the crown structure of a tooth. Cone cracks initiated at the coating top surface without delamination at interface and crack propagation to substrate. Preferentially the cracks made multi-cracks at the coating top surface rather than proceeding to interface. The cracks were highly stabilized with wide ranges between the loads to initiate first cracking and to cause final failure im-plying damage-tolerant capability. Finite element modelling was used to evaluate the stress distribution. Maximum tensile stress were responsible for the cracking at the coating layer and had a profound influence on the crack pattern and fracture damage in the layered structure materials.