• Current Photovoltaic Research
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• v.7 no.3
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• pp.76-84
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• 2019

Silicon heterojunction solar cells (SHJ) have dominated the photovoltaic market up till now but their conversion performance is practically limited to around 26% compared with the theoretical efficiency limit of 29.4%. A silicon based multi-junction devices are expected to overcome this limitation. In this report, we briefly review the state-of-art characteristic of wide-gap materials which has played a role as top sub-cells in silicon based multi-junction solar cells. In addition, we indicate significantly practical challenges and key issues of these multi-junction combination. Finally, we focus to some characteristics of III-V/c-Si tandem configuration which are reaching highly record performance in multi-junction silicon solar cells.

• Ceramist
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• v.22 no.2
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• pp.146-169
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• 2019

To overcome the theoretical efficiency of single-junction solar cells (> 30 %), tandem solar cells (or multi-junction solar cells) is considered as a strong nominee because of their excellent light utilization. Organic-inorganic halide perovskite has been regarded as a promising candidate material for next-generation tandem solar cell due to not only their excellent optoelectronic properties but also their bandgap-tune-ability and low-temperature process-possibility. As a result, they have been adopted either as a wide-bandgap top cell combined with narrow-bandgap silicon or CuIn_xGa_(1-x)Se₂ bottom cells or for all-perovskite tandem solar cells using narrow- and wide-bandgap perovskites. To successfully transition perovskite materials from for single junction to tandem, substantial efforts need to focus on fabricating the high quality wide- and narrow-bandgap perovskite materials and semi-transparent electrode/recombination layer. In this paper, we present an overview of the current research and our outlook regarding perovskite-based tandem solar technology. Several key challenges discussed are: 1) a wide-bandgap perovskite for top-cell in multi-junction tandem solar cells; 2) a narrow-bandgap perovskite for bottom-cell in all-perovskite tandem solar cells, and 3) suitable semi-transparent conducting layer for efficient electrode or recombination layer in tandem solar cells.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.12
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• pp.34-41
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• 2011

In order to understand the thermal performance of each LED chips in multi-chip LED package, a quantitative parametric analysis of the temperature evolution was investigated by thermal transient analysis. TSP (Temperature Sensitive Parameter) value was measured and the junction temperature was predicted. Thermal resistance between the p-n junction and the ambient was obtained from the structure function with the junction temperature evolution during the cooling period of LED. The results showed that, the thermal resistance of the each LED chips in 4 chip-LED package was higher than that of single chip- LED package.

• Journal of Sensor Science and Technology
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• v.4 no.2
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• pp.3-6
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• 1995

Type K thermocouples having multi-junction for measuring the temperature gradient of the furnace were fabricated. The obtained results on the temperature gradient of the electric furnace maintained at $800^{\circ}C$ were consistent with those for the reference grade type S thermocouple, which was carefully calibrated, within the permitted error limit of the type K thermocouple. It was suggested that noble metal multi-junction thermocouples be suitable for more accurate temperature gradient measurements.

• Vacuum Magazine
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• v.1 no.4
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• pp.4-9
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• 2014

About 170 years has been passed since the concept of photovoltaic has been suggested by French physicist Alexandre-Edmond Becquerel. Now the highest efficiency of solar cell has reached up to 44% by III-V multi-junction solar cells with concentrator. Those multi-junction solar cells are suitable as energy source for spaceships. On the other hand, the cell efficiency of solar cell for electric power generation as energy source for Earth has is going to be saturated although commercial solar cell efficiency is around 20%. In the part 1 of this article, the history of III-V multi-junction solar cells which have been adapted for spaceships is explained and in the part 2, new approach for the improvement of cell efficiency is suggested as the energy source for Earth.

• Journal of IKEEE
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• v.25 no.2
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• pp.356-361
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• 2021

Super Junction structure is the proposed structure to minimize the Trade-off phenomenon of power devices. Super Junction can have On-resistance(Ron) characteristics as less as five times than conventional structure. There are process methods that Multi-Epi and Deep-Trench of Super Junction structure. The reason for this is that Deep-Trench process is known to be a relatively difficult manufacturing method because it is easy to form a P-Pillar by burying impurities on top of a silicon substrate through a Deep-Trench process. However, the structure created by the Deep-Trench process has low On-resistance and high breakdown voltage, showing better efficiency. In this paper, we suggested a novel method in the process and designed structure with Charge Balance theory.

• Current Photovoltaic Research
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• v.8 no.3
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• pp.94-101
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• 2020

This study was trying to focus on achieving high efficiency of multi junction solar cell with thin film silicon solar cells. The proposed thin film Si-Ge/c-Si tandem junction solar cell concept with a combination of low-cost thin-film silicon solar cell technology and high-efficiency c-Si cells in a monolithically stacked configuration. The tandem junction solar cells using amorphous silicon germanium (a-SiGe:H) as an absorption layer of upper sub-cell were simulated through ASA (Advanced Semiconductor Analysis) simulator for acquiring the optimum structure. Graded Ge composition - effect of E_g profiling and inserted buffer layer between absorption layer and doped layer showed the improved current density (J_sc) and conversion efficiency (η). 13.11% conversion efficiency of the tandem junction solar cell was observed, which is a result of showing the possibility of thin film Si-Ge/c-Si tandem junction solar cell.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.322.1-322.1
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• 2014

Many research groups have studied tandem or multi-junction cells to overcome this low efficiency and degradation. In multi-junction cells, band-gap engineering of each absorb layer is needed to absorb the light at various wavelengths efficiently. Various absorption layers can be formed using multi-junctions, such as hydrogenated amorphous silicon carbide (a-SiC:H), amorphous silicon germanium (a-SiGe:H) and microcrystalline silicon (${\mu}c$-Si:H), etc. Among them, ${\mu}c$-Si:H is the bottom absorber material because it has a low band-gap and does not exhibit light-induced degradation like amorphous silicon. Nevertheless, ${\mu}c$-Si:H requires a much thicker material (>2 mm) to absorb sufficient light due to its smaller light absorption coefficient, highlighting the need for a high growth rate for productivity. ${\mu}c$-SiGe:H has a much higher absorption coefficient than ${\mu}c$-Si:H at the low energy wavelength, meaning that the thickness of the absorption layer can be decreased to less than half that of ${\mu}c$-Si:H. ${\mu}c$-SiGe:H films were prepared using 40 MHz very high frequency PECVD method at 1 Torr. SiH4 and GeH4 were used as a reactive gas and H2 was used as a dilution gas. In this study, the ${\mu}c$-SiGe:H layer for triple solar cells applications was performed to optimize the film properties.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• v.21 no.2
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• pp.63-73
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• 2017

Segmenting the image into multiple regions is at the core of image processing. Many segmentation formulations of an images with multiple regions have been suggested over the years. We consider segmentation algorithm based on the multi-phase level set method in this work. Proposed method gives the best result upon other methods found in the references. Moreover it can segment images with intensity inhomogeneity and have multiple junction. We extend our method (GLIF) in [T. Dultuya, and M. Kang, Segmentation with shape prior using global and local image fitting energy, J.KSIAM Vol.18, No.3, 225-244, 2014.] using a multiphase level set formulation to segment images with multiple regions and junction. We test our method on different images and compare the method to other existing methods.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.173-176
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• 2020

This study focuses on a pillar in which is implanted a P-type maneuver under a P base. This structure is called a super junction structure. By inserting the pillar, the electric field concentrated on the P base is shared by the pillar, so the columns can be dispersed while maintaining a high breakdown voltage. Ten pillars were generated during the multi epitaxial process. The interval between pillars is varied to optimize the electric field to be concentrated on the pillar at a threshold voltage of 6 V, a yield voltage of 4,500 V, and an on-state voltage drop of 3.8 V. The density of the filler gradually decreased when the interval was extended by implanting a filler with the same density. The results confirmed that the size of the depletion layer between the filler and the N-epitaxy layer was reduced, and the current flowing along the N-epitaxy layer was increased. As the interval between the fillers decreased, the cost of the epitaxial process also decreased. However, it is possible to confirm the trade-off relationship that deteriorated the electrical characteristics and efficiency.