• ETRI Journal
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• v.21 no.4
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• pp.1-8
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• 1999

Thick metal 0.8${\mu}m$ CMOS technology on high resistivity substrate(RF CMOS technology) is demonstrated for the L-band RF IC applications, and we successfully implemented it to the monolithic 900 MHz and 1.9 GHz CMOS LNAs for the first time. To enhance the performance of the RF circuits, MOSFET layout was optimized for high frequency operation and inductor quality was improved by modifying the technology. The fabricated 1.9 GHz LNA shows a gain of 15.2 dB and a NF of 2.8 dB at DC consumption current of 15mA that is an excellent noise performance compared with the offchip matched 1.9 GHz CMOS LNAs. The 900 MHz LNA shows a high gain of 19 dB and NF of 3.2 dB despite of the performance degradation due to the integrating of a 26 nH inductor for input match. The proposed RF CMOS technology is a compatibel process for analog CMOS ICs, and the monolithic LNAs employing the technology show a good and uniform RF performance in a five inch wafer.

• Advances in Computational Design
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• v.1 no.2
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• pp.139-154
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• 2016

The usage of sandwich structure is extensively increasing in lightweight protective structures due to its low density and other useful properties. Sandwich panels made of metal sheets with unfilled cellular cores are found to exhibit lower deflections by comparing to an equivalent monolithic plate of same metal and similar mass per unit density. However, the process of localized impact on solid structures involving plastic deformation, high strain rates, temperature effect, material erosion, etc. does not hold effectively as that of monolithic plate. In present work, the applications of the sandwich plate with corrugated core have been extended to develop optimized lightweight armour using foam as medium of its core by explicit finite element analysis (FEA). The mechanisms of hardened steel projectile penetration of aluminum corrugated sandwich panels filled with foams have been numerically investigated by finite element analysis (FEA). A comparative study is done for the triangular corrugated sandwich plate filled with polymeric foam and metallic foam with different densities in order to achieve the optimum penetration resistance to ballistic impact. Corrugated sandwich plates filled with metallic foams are found to be superior when compared to the polymeric one. The optimized results are then compared with that of equivalent solid and unfilled cores structure to observe the effectiveness of foam-filled corrugated sandwich plate which provides an effective resistance to ballistic response. The novel structure can be the alternative to solid aluminum plate in the applications of light weight protection system.

• Electronics and Telecommunications Trends
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• v.37 no.5
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• pp.11-21
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• 2022

GaN (Gallium-Nitride) is a promising candidate material in various radio frequency applications due to its inherent properties including wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. Notably, AlGaN/GaN heterostructure field effect transistor exhibits high operating voltage and high power-density/power at high frequency. In next-generation radar systems, GaN power transistors and monolithic microwave integrated circuits (MMICs) are significant components of transmitting and receiving modules. In this paper, we introduce technological trends for C-/X-/Ku-band GaN MMICs including power amplifiers, low noise amplifiers and switch MMICs, focusing on the status of GaN MMIC fabrication technology and GaN foundry service. Additionally, we review the research for the localization of C-/X-/Ku-band GaN MMICs using in-house GaN transistor and MMIC fabrication technology. We also discuss the results of C-/X-/Ku-band GaN MMICs developed at Defense Materials and Components Convergence Research Department in ETRI.

• ETRI Journal
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• v.31 no.5
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• pp.622-624
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• 2009

This letter presents a compact 2.5 Gb/s burst-mode receiver using the first reported monolithic amplifier IC developed with 0.25 ${\mu}m$ SiGe BiCMOS technology. With optimum avalanche photodiode gain, the receiver module can obtain a fast response, high sensitivity and wide dynamic range, satisfying the overhead timing and various power specifications for a 2.5 Gb/s next-generation passive optical network (PON), as well as a legacy 1.25 Gb/s PON in the upstream.

• ETRI Journal
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• v.35 no.3
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• pp.546-549
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• 2013

A Ka-band 6-W high power microwave monolithic integrated circuit amplifier for use in a very small aperture terminal system requiring high linearity is designed and fabricated using commercial 0.15-${\mu}m$ GaAs pHEMT technology. This three-stage amplifier, with a chip size of 22.1 $mm^2$ can achieve a saturated output power of 6 W with a 21% power-added efficiency and 15-dB small signal gain over a frequency range of 28.5 GHz to 30.5 GHz. To obtain high linearity, the amplifier employs a class-A bias and demonstrates an output third-order intercept point of greater than 43.5 dBm over the above-mentioned frequency range.

• Transactions on Electrical and Electronic Materials
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• v.17 no.6
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• pp.369-374
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• 2016

This paper presents a design procedure of an integrated inductor with a magnetic core for power converters. This procedure considerably reduces design time and effort. The proposed design procedure is verified by the development of an inductor model dedicated to the monolithic integration of DC-DC converters for portable applications. The numerical simulation based on the FEM (finite elements method) shows that 3D modeling of the integrated inductor allows better estimation of the electrical parameters of the desired inductor. The optimization of the electrical parameter values is based on the numerical analysis of the influence of the geometric parameters on the electrical characteristics of the inductor. Using the VHDL-AMS language, implementation of the integrated inductor in a micro Buck converter demonstrate that simulation results present a very promising approach for the monolithic integration of DC-DC converters.

• ETRI Journal
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• v.36 no.3
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• pp.498-501
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• 2014

A C-band 50 W high-power microwave monolithic integrated circuit amplifier for use in a phased-array radar system was designed and fabricated using commercial $0.25{\mu}m$ AlGaN/GaN technology. This two-stage amplifier can achieve a saturated output power of 50 W with higher than 35% power-added efficiency and 22 dB small-signal gain over a frequency range of 5.5 GHz to 6.2 GHz. With a compact $14.82mm^2$ chip area, an output power density of $3.2W/mm^2$ is demonstrated.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.12B
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• pp.1733-1740
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• 2001

A monolithic 5 GHz image reject mixer using a 0.5-m GaAs MESFET technology is designed and simulated. The Mixer exhibits a 13.56 dB down-conversion gain, a SSB (Single SideBand) noise figure of 11.91 dB, an input IP3 (third order intercept point) of -3.73 dBm and a PldB (1-dB compression point) of -11.0 dBm. The critical issue in the image reject mixer is the phase accuracy and magnitude balance of the 90 phase shifting network. The proposed image reject mixer realizes a 90 phase shifter on chip. This phase shifting network does not need any phase adjusting to achieve the phase error specification of 3 over a frequency range from 800 MHz to 1GHz. The simulated overall image rejection ratio is better than 50 dB.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1039-1044
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• 2002

Film Bulk Acoustic Resonator (FBAR) using thin piezoelectric films can be made as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents an MMIC compatible suspended FBAR using SOI micromachining. It is possible to make a single crystal silicon membrane using a SOI wafer In fabricating active devices, SOI wafer offers advantage which removes the substrate loss. FBAR was made on the 12㎛ silicon membrane. Electrode and Piezoelectric materials were deposited by RF magnetron sputter. The maximum resonance frequency of FBAR was shown at 2.5GHz range. The reflection loss, K$^2$$\_$eff/, Q$\_$serise/ and Q$\_$parallel/ in that frequency were 1.5dB, 2.29%, 220 and 160, respectively.

• Journal of electromagnetic engineering and science
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• v.14 no.4
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• pp.342-345
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• 2014

An active frequency doubler monolithic microwave integrated circuit (MMIC) for E-band transceiver applications is presented in this letter. This MMIC has been fabricated in a commercial $0.1-{\mu}m$ GaAs pseudomorphic high electron mobility transistor (pHEMT) process on a 2-mil thick substrate wafer. The fabricated MMIC chip has been measured to have a high output power performance of over 13 dBm with a high fundamental leakage suppression of more than 38 dBc in the frequency range of 71 to 86 GHz under an input signal condition of 10 dBm. A microstrip coupled line is used at the output circuit of the doubler section to implement impedance matching and simultaneously enhance the fundamental leakage suppression. The fabricated chip is has a size of $2.5mm{\times}1.2mm$.