• Electronics and Telecommunications Trends
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• v.37 no.5
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• pp.11-21
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• 2022

GaN (Gallium-Nitride) is a promising candidate material in various radio frequency applications due to its inherent properties including wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. Notably, AlGaN/GaN heterostructure field effect transistor exhibits high operating voltage and high power-density/power at high frequency. In next-generation radar systems, GaN power transistors and monolithic microwave integrated circuits (MMICs) are significant components of transmitting and receiving modules. In this paper, we introduce technological trends for C-/X-/Ku-band GaN MMICs including power amplifiers, low noise amplifiers and switch MMICs, focusing on the status of GaN MMIC fabrication technology and GaN foundry service. Additionally, we review the research for the localization of C-/X-/Ku-band GaN MMICs using in-house GaN transistor and MMIC fabrication technology. We also discuss the results of C-/X-/Ku-band GaN MMICs developed at Defense Materials and Components Convergence Research Department in ETRI.

• Journal of Pharmaceutical Investigation
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• v.11 no.3
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• pp.14-20
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• 1981

One of the major objectives in the developments of a progesterone I.U.D. is to prepare devices which release drug at a constant rate for extended periods. A constant release rate is achived by maintaining drug concentration at a constant valve via the introduction of rate limiting membrane to solute diffusion at the surface of the devices. In this study, progesterone dispersed at monolithic device were prepared from polyhydroxy ethyl methacrylate. Constant release rate were obtained with device which were soaked in on ethanol-hexan solution. The release rate was dependant upon the concentration of the ethanolic solution in the soaking solution. This devices offer significant potential for futher development of hydrogel in the intrauterine contraception device for controlled release of progesterone.

• Applied Chemistry for Engineering
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• v.18 no.6
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• pp.568-574
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• 2007

Crack-free dried gel monoliths of the composition $Li_2O1{\cdot}7Al_2O_3{\cdot}8.6SiO_2$ have been prepared as a precursor of transparent glass-ceramic by the hydrolysis and polycondensation of mixed metal alkoxides in solutions containing N,N-dimethylformamide as the drying control chemical additive, alcohols, and water. It was investigated that activation energy for gelation according to the variation of water concentration ranged from 13 to 14 kcal/mol. Only when the amount of water for gelation was 3 times higher than the stoichiometric amount, monolithic dry gels were successfully prepared after drying at $70{\sim}75^{\circ}C$ and at a rate of 0.1~0.3%/h. The specific surface area, the pore volume, the average pore diameters of dried gel at $180^{\circ}C$ were about $239.40m^2/g$, 0.001~0.03 mL/g, and $145.62{\AA}$, respectively. It showed that the dried monolithic gel had a porous body. The DTA curve had the first exothermic peak around $800^{\circ}C$ and the 2nd peak around $980^{\circ}C$, which may correspond to crystallization of the gel.

• Analytical Science and Technology
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• v.20 no.4
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• pp.323-330
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• 2007

A simple and rapid HPLC method with fluorescence detection(FLD) for quantitation of penciclovir in human plasma using a monolithic column was developed and validated. Penciclovir and ganciclovir(internal standard, I.S.) were separated on a Chromolith column RP-18e ($4.6{\times}100mm$) with a mobile phase consisting of a mixture of (A) methanol/50 mM sodium phosphate buffer containing 200 mg/L sodium dodecyl sulfate (3/97, pH 2.5) and (B) methanol/50 mM sodium phosphate buffer containing 200 mg/L sodium dodecyl sulfate (50/50, pH 2.5) at a flow gradient of $1.6{\sim}4.0mL/min$. The retention times of penciclovir and internal standard were less than 4.0 min. Calibration curve was linear ($R^2=0.9994$) over a concentration range of $0.1{\sim}5{\mu}g/mL$. Intra-day precision, accuracy and inter-day precision were 1.36~8.55 %, 92.8~100.0 % and 0.93~5.62 %, respectively with a limit of quantitation at $0.1{\mu}g/mL$. The present HPLC-FLD method is sensitive, precise and accurate. The method described herein has been successfully used for the bioequivalence study of a famciclovir formulation product after oral administration to healthy Korean volunteers.

• Journal of the Earthquake Engineering Society of Korea
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• v.13 no.6
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• pp.59-65
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• 2009

The use of precast concrete segments facilitates quality control and reduces construction cost and period. However, as a construction method it has limited applicability, for it demonstrates structurally disadvantageous behaviors due to stress concentration and large displacement in the joint of assembled segments. This paper proposes a precast segment joint with improved structural performance, and experimentally assesses the structural performance of the proposed joint in terms of crack and failure modes, deformation, maximum load and displacement ductility. In consideration of constructability and structural performance, this paper suggests different types of joint with shear key, post tension and steel rods as variables, and performs a static loading test on them. The test results show that the performance of SGSP specimens is around 84% that of a monolithic specimen in terms of the maximum load, while their ductility behaviors are better than the monolithic specimen. This result confirms the improved structural performance and applicability of the proposed joint.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 1994.10a
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• pp.113-120
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• 1994

Large Concrete Panel Structures behave quite differently from frame or monolithic shear wall structures because of the weakness of Joint in stiffness and strength. The joint experiences large deformation such as shear-slip in vertical and horizontal joint and rocking and crushing in horizontal joint because of localized stress concentration, but the wall panels behave elastically under cyclic loads. In order to describe the nonlinear behavior of the joint in the analysis of PC structures, different analysis technique from that of RC structures is needed. In this paper, for analysis of large concrete panel subassemblage subjected to cyclic loads, the wall panels are idealized by elastic finite elements, and the joints by nonlinear spring elements with various load-deflection relationship. The analytical results are compared with the experimental results on the strength, stiffness, energy dissipation and lateral drift, and the effectiveness of this computer analysis modelling technique is checked.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.5
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• pp.232-237
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• 2005

In this paper, we fabricated $CO_2$ gas sensor based on the MEMS infrared sensor and characterized its electrical and $CO_2$-sensing properties. The fabricated $CO_2$ gas sensor by MEMS technique has many advanges over NDIR(nondispersive) $CO_2$ sensor such as monolithic fabrication, very high selectivity on $CO_2$, low power consumption and compact system. Microbolometer by surface micromachining was fabricated for gas detector and $CO_2$ filter chip by bulk micromachining was fabricated for signal referencing. By using the proposed and fabricated gas sensor, we are expected to measure $CO_2$ concentration more accurately with high reliability.

• Solar Energy
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• v.18 no.1
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• pp.35-43
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• 1998

In two terminals monolithic tandem solar cells, tunnel diode is an important variable to improve conversion efficiency depending on current matching between the top and the bottom cells. Especially, the GaAs/Ge tandem is one of the most interesting cells for its high potential efficiency. This paper shows that physical analysis about I-V specific character of the GaAs/Ge solar cell, which is grown by MOCVD for GaAs or CVD for Ge, using computer simulation and experimental results, varying with thickness of the tunnel diode layer and concentration.

• Advanced Composite Materials
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• v.18 no.4
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• pp.339-350
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• 2009

Al-Fe-V-Si alloys reinforced with SiC particles were prepared by multi-layer spray deposition technique. Both microstructures and mechanical properties including hardness and tensile properties development during hot exposure process of Al-8.5Fe-1.3V-1.7Si, Al-8.5Fe-1.3V-1.7Si/15 vol% $SiC_P$ and Al-10.0Fe-1.3V-2Si/15 vol% $SiC_P$ were investigated. The experimental results showed that an amorphous interface of about 3 nm in thickness formed between SiC particles and the matrix. SiC particles injected silicon into the matrix; thus an elevated silicon concentration was found around $\alpha-Al_{12}(Fe,\;V)_3Si$ dispersoids, which subsequently inhibited the coarsening and decomposition of $\alpha-Al_{12}(Fe,\;V)_3Si$ dispersoids and enhanced the thermostability of the alloy matrix. Moreover, the thermostability of microstructure and mechanical properties of Al-10.0Fe-1.3V-2Si/15 vol% $SiC_P$ are of higher quality than those of Al-8.5Fe-1.3V-1.7Si/15 vol% $SiC_P$.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.53-64
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• 2021

As the 5G service market is expected to grow rapidly, the development of high-power, high-efficiency power amplifiers for the 5G communication infrastructure is indispensable. Gallium nitride (GaN) is attracting great interest as a key device in power devices and integrated circuits due to its wide bandgap, high carrier concentration, high electron mobility, and high-power saturation characteristics. In this study, we investigate the technology trends of Ka-band GaN radio frequency (RF) power devices and integrated circuits for operation in the millimeter-wave band of recent 5G mobile communication services. We review the characteristics of GaN RF high electron mobility transistor (HEMT) devices to implement power amplifiers operating at frequencies around 28 GHz and compare the technology of foreign companies with the device characteristics currently developed by the Electronics and Telecommunication Research Institute (ETRI). In addition, the characteristics of Ka-band GaN monolithic microwave integrated circuit (MMIC) power amplifiers manufactured using various GaN HEMT device technologies are reviewed by comparing characteristics such as frequency band, output power, and output power density of integrated circuits. In addition, by comparing the performance of the power amplifier developed by ETRI, the current status and future direction of domestic GaN power devices and integrated circuit technology will be discussed.