• Journal of Electrochemical Science and Technology
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• v.13 no.1
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• pp.120-127
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• 2022

Molybdenum disulfide (MoS₂) has been widely used as a catalyst for the bifunctional activities of hydrogen and oxygen evolution reactions (HER and OER). Here, we investigated size dependent HER and OER performance of MoS₂. The smallest size (90 nm) of MoS₂ exhibits the lowest overpotential of -0.28 V at -10 mAcm^-2 and 1.52 V at 300 mAcm^-2 with the smallest Tafel slopes of 151 and 176 mVdec^-1 for HER and OER, respectively, compared to bigger sizes (2 ㎛ and 6 ㎛) of MoS₂. The better HER and OER performance is attributed to high electrochemical active surface area (6 × 10^-4 cm²) with edge sites and low charge transfer resistance (18.1 Ω), confirming that the smaller MoS₂ nanosheets have the better catalytic behavior.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.145-146
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• 2002

Tribological properties of co-sputtered Molybdenum disulfide $(MoS_2)/Carbon\;(C)$ films were studied and compared with those of sputtered $MoS_2$ films. Friction tests were carried out using pin-on-disk friction testers to evluated their friction and wear behaviors in a vacuum ($10^{-5}Pa$), air and humid air of 30, 50, 80% RH. $MoS_2/C$ (14%) composite films exhibited about 9 times longer wear life in a vacuum and about 6 times longer wear life in dry air than $MoS_2$ films did. They also showed stable low friction coefficient of about 0.02 in a vacuum. In humid air, however, $MoS_2/C$ composite films hardly showed good tribological properties.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.105-109
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• 2022

For the realization of higher reliable transition metal dichalcogenide layer, molybdenum disulfide was formed on sapphire substrate by direct current sputtering and subsequent rapid thermal annealing process. Unlike RF sputtered MoS₂ thin films, DC sputtered showed no irregular holes and protrusions after annealing process from scanning electron microscope images. From atomic force microscope results, it was possible to investigate that surface roughness of MoS₂ thin films were more dependent on DC sputtering power then annealing temperature. On the other hand, the Raman scattering spectra showed the dependency of significant E¹_2g and A¹_g peaks on annealing temperatures.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.234.1-234.1
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• 2015

Molybdenum disulfide (MoS2)는 van der Waals 결합을 통한 층상구조의 물질로써 뛰어난 물리화학적, 기계적 특성으로 Field Effect Transistors (FETs), Photoluminescence, Photo Detectors, Light Emitters 등의 많은 분야에서 연구가 보고 되어지고 있는 차세대 2D-materials이다. 이처럼 MoS2 가 다양한 범위에 응용될 수 있는 이유는 layer 수가 증가함에 따라 1.8 eV의 direct band gap 에서 1.2 eV 의 indirect band-gap으로 특성이 변화할 뿐만 아니라 다양한 고유의 전기적 특성을 지니고 있기 때문이다. 그러나 MoS2 는 원자층 단위의 layer control 이 어렵다는 이유로 다양한 전자소자 응용에 많은 제약이 보고 되어졌다. 본 연구에서는 MoS2 의 layer를 control 하기 위해 ICP system 에서 mesh grid 를 삽입하여 Cl2 radical을 효과적으로 adsorption 시킨 뒤, Ion beam system 에서 Ar+ Ion beam 을 통해 한 층씩 제거하는 방식의 atomic layer etching (ALE) 공정을 진행하였다. ALE 공정시 ion bombardment 에 의한 damage 를 최소화하기 위해 Quadruple Mass Spectrometer (QMS) 를 통한 에너지 분석으로 beam energy 를 20 eV에서 최적화 할 수 있었고, Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS), Atomic Force Microscopy(AFM) 분석을 통해 ALE 공정에 따른 MoS2 layer control 가능 여부를 증명할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.209.2-209.2
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• 2015

Two dimensional layered materials, such as transition metal dichalcogenides (TMDs) family have been attracted significant attention due to novel physical and chemical properties. Among them, molybdenum disulfide ($MoS_2$) has novel physical phenomena such as absence of dangling bonds, lack of inversion symmetry, valley degrees of freedom. Previous studies have shown that the interface of metal/$MoS_2$ contacts significantly affects device performance due to presence of a scalable Schottky barrier height at their interface, resulting voltage drops and restricting carrier injection. In this study, we report a new device structure by using few-layer graphene as the bottom interconnections, in order to offer Schottky barrier free contact to bi-layer $MoS_2$. The fabrication of process start with mechanically exfoliates bulk graphite that served as the source/drain electrodes. The semiconducting $MoS_2$ flake was deposited onto a $SiO_2$ (280 nm-thick)/Si substrate in which graphene electrodes were pre-deposited. To evaluate the barrier height of contact, we employed thermionic-emission theory to describe our experimental findings. We demonstrate that, the Schottky barrier height dramatically decreases from 300 to 0 meV as function of gate voltages, and further becomes negative values. Our findings suggested that, few-layer graphene could be able to realize ohmic contact and to provide new opportunities in ohmic formations.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.129-132
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• 2017

We report a chemical vapor deposition approach and optimized growth condition to the synthesis of single layer molybdenum disulfide ($MoS_2$). Obtaining large grain size with continuous $MoS_2$ atomically thin films is highly responsible to the growth distance between molybdenum trioxide source and receiving silicon substrate. Experimental results indicate that triangular shape $MoS_2$ grain size could be enlarged up to > 80um with the precisely controlled the source-to-substrate distance under 7.5 mm. Furthermore, we demonstrate fabrication of a memory device by employing poly(methyl methacrylate) (PMMA) as insulating layer. The fabricated devices have a PMMA-$MoS_2$/metal configuration and exhibit a bistable resistance switching behavior with high/low-current ratio around $10^3$.

• Applied Chemistry for Engineering
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• v.30 no.2
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• pp.133-140
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• 2019

Two-dimensional (2D) ultrathin molybdenum dichalcogenides $MoS_2$ has gained a great deal of attention in energy conversion and storage applications because of its unique morphology and property. The 2D $MoS_2$ nanosheets provide a high specific surface area, 2D charge channel, sub-nanometer thickness, and high conductivity, which lead to high electrochemical performances for energy storage devices. In this paper, an overview of properties and synthetic methods of $MoS_2$ nanosheets for applications of supercapacitors and rechargeable batteries is introduced. Different phases triangle prismatic 2H and metallic octahedral 1T structured $MoS_2$ were characterized using various analytical techniques. Preparation methods were focused on top-down and bottom-up approaches, including mechanical exfoliation, chemical intercalation and exfoliation, liquid phase exfoliation by the direct sonication, electrochemical intercalation exfoliation, microwave-assisted exfoliation, mechanical ball-milling, and hydrothermal synthesis. In addition, recent applications of supercapacitors and rechargeable batteries using $MoS_2$ electrode materials are discussed.

• Tribology and Lubricants
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• v.18 no.2
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• pp.153-159
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• 2002

This paper describes a durability characteristics of an air-lubricated bump foil journal bearing for high speed turbomachinerys at room temperature. At first, lift-off test and load capacity test were performed to understand the general characteristics of an air-lubricated bump foil Journal bearing. A 52 N weighted bump foil bearing sleeve was lilted off from a rotating Journal at about 3,000 rpm, and produced a load capacity of 500 N at an operating speed of 15,000 rpm. The next was 500 cycles lift-off test with an air-lubricated bump foil journal bearing that had a molybdenum disulfide(MoS$_2$) solid lubricant coated top foil. Data from measuring bearing torque and temperature and the observation of rubbing surfAce were included in results. Therefore the results of this work will aid in proving durability of air-lubricated bump foil journal bearings.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.11a
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• pp.212-219
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• 2001

This paper describes a durability characteristics of an air-lubricated bump foil journal bearing for high speed turbomachinerys at room temperature. At first, lift-off test and load capacity test were performed to understand the general characteristics of an air-lubricated bump foil journal bearing. A 52N weighted bump foil bearing sleeve was lifted off from a rotating journal at about 3,000rpm, and produced a load capacity of 500N at an operating speed of 15,000rpm. The next was 500 cycles lift-off test with an air-lubricated bump foil journal bearing that had a molybdenum disulfide(MoS$_2$) solid lubricant coated top foil. Data from measuring bearing torque and temperature and the observation of rubbing surface were included in results. Therefore the results of this work will aid in proving durability of air-lubricated bump foil journal bearings.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.356.1-356.1
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• 2014

The Isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. in particular, the two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential application in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. In this account, a controlled thermal reduction-sulfurization method is used to synthesize large-MoOx thin films are first deposited on Si/SiO2 substrates, which are then sulfurized (under vacuum) at high temperatures. Samples with different thicknesses have been analyzed by Raman spectroscopy and TEM, and their photoluminescence properties have been evaluated. We demonstrated the presence of mono-, bi-, and few-layered MoS2 on as-grown samples. It is well known that the electronic structure of these materials is very sensitive to the number of layer, ranging from indirect band gap semiconductor in the bulk phase to direct band gap semiconductor in monolayers. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.