• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.2
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• pp.52-56
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• 2007

We have installed an ultra high vacuum (UHV) molecular beam epitaxy (MBE) system and investigated into the characteristics of MBE-grown ZnSe/GaAs [001] using scanning electron microscopy (SEM), atomic force microscopy (AFM), we confirmed that layer's surface was dense and uniform of molecular layer. We used x-ray diffractometer (XRD) and confirmed two peaks correspond to GaAs [001] substrate and ZnSe epilayer, respectively. We observed photoluminescence (PL) peak approximately at 437 nm and measured PL mapping of 2 inch ZnSe epilayer.

• Journal of the Korean Vacuum Society
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• v.15 no.5
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• pp.458-464
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• 2006

The construction and the performance test of an ultra high vacuum (UHV) molecular beam epitaxy (MBE) system has been completed successfully. We have done domestic development and tried performance test for ultra high vacuum molecular beam epitaxy system. This system has reached pressure $2X10-^{10}$ Torr and the substrate has reached temperature $1,100^{\circ}C$. We have investigated into the characteristic of ZnSe/GaAs(001) by using scanning electron microscope (SEM), atomic force microscope (AFM), x-ray diffraction (XRD) and photolumi-nescence (PL).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.202.1-202.1
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• 2013

ZnO nanostructure was fabricated on a Si substrate using two-step growth. The seed layer was grown on the Si substrate by a sol-gel spin-coating. In the first step, ZnO nanorods were grown by a hydrothermal method at $140^{\circ}C$ for 5 min. In the second step, a ZnO thin film was grown on the ZnO nanorods by spin-coating. After growth, these films were annealed at $800^{\circ}C$ for 10 min. Electrical and optical properties of ZnO nanostructures have modified by plasma-assisted molecular beam epitaxy (PA-MBE) regrowth. The carrier concentration and resistivity increased by PA-MBE regrowth. In the photoluminescence, the full width at half maximum and intensity were decreased and increased, respectively, by PA-MBE regrowth.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.83-88
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• 2003

The optoelectronic characteristics of semiconducto-atomic superlattice as a function of deposition temperature and annealing conditions have been studied. The nanocrystalline silicon/adsorbed oxygen superlattice formed by molecular beam epitaxy(MBE) system. As an experimental result, the superlattice with multilayer Si-O structure showed a stable photoluminescence(PL) and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronics and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in ultra-high speed and lower power CMOS devices in the future, and it can be directly integrated with silicon ULSI processing.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.134-138
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• 1992

The GaAs/AlAs double barrier structures was grown by MBE(Mo1ecular Beam Epitaxy). Mesa diode was fabricated and I-V characteristics of the diode were measured by semiconductor parameter analyser at room temperature. TEM pictures show the double barrier structure with abrupt interface. PVCR(Peak to Valley Current Ratio) proves to be independent of barrier thickness. These results show that increase in barrier thickness leads to larger valley current by non-resonant tunneling.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.1005-1009
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• 2006

High quality three-dimensional (3D) heterostructures were constructed by selective area (SA) molecular beam epitaxy (MBE) using a specially patterned GaAs (001) substrate to improve the efficiency of tarrier transport. MBE growth parameters such as substrate temperature, V/III ratio, growth ratio, group V sources (As2, As4) were varied to calibrate the selective area growth conditions and the 3D GaAs-AlGaAs heterostructures were fabricated into the ridge type and the V-groove type. Scanning micro-photoluminescence $({\mu}-PL)$ measurements and the following analysis revealed that the gradually (adiabatically) coupled 1D-2DEG (electron gas) field effect transistor (FET) system was successfully realized. These 3D-heterostructures are expected to be useful for the realization of high-performance mesoscopic electronic devices and circuits since it makes it possible to form direct ohmic contact onto the (quasi) 1D electron channel.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.695-701
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• 2016

Be-doped GaSb layers were grown on highly mismatched semi-insulating GaAs substrate (001) with $2^{\circ}$ offcut towards <110> at low growth temperature, by molecular beam epitaxy (MBE). The influence of Be doping on the crystallographic quality, surface morphology, and electrical properties, was assessed by X-ray diffraction, Nomarski microscopy, and Hall effect measurements, respectively. Be impurities are well behaved acceptors with hole concentrations as high as $9{\times}10^{17}cm^{-3}$. In addition, the reduction of GaSb lattice parameter with Be doping was studied.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.4
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• pp.143-148
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• 2019

We have successfully fabricated high aspect-ratio GaN-based nanowires on Si substrates using molecular beam epitaxy (MBE) system for high-efficiency hydrogen generation of photoelectrochemical water splitting. Scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) demonstrated that p-GaN:Mg and p-InGaN nanowires were grown vertically on the substrate with high density. Furthermore, it was also confirmed that the emission wavelength of p-InGaN nanowire can be adjusted from 552 nm to 590 nm. Such high-aspect ratio p-InGaN nanowire structure will be a solid foundation for the realization of ultrahigh-efficiency photoelectrochemical water splitting through sunlight.

• Applied Microscopy
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• v.36 no.spc1
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• pp.35-40
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• 2006

Self-assembled InAs/GaAs quantum dots (QDs) were grown by the atomic layer epitaxy (ALE) and molecular beam epitaxy (MBE) techniques, The structure and the thermal stability of QDs have been studied by high resolution electron microscopy with in-situ heating experiment capability, The ALE and MBE QDs were found to form a hemispherical structure with side facets in the early stage of growth, Upon capping by GaAs layer, however, the apex of QDs changed to a flat one. The ALE QDs have larger size and more regular shape than those of MBE QDs. The QDs collapse due to elevated temperature was observed directly in atomic scale, In situ heating experiment within TEM revealed that the uncapped QDs remained stable up to $580^{\circ}C$, However, at temperature above $600^{\circ}C$, the QDs collapsed due to the diffusion and evaporation of In and As from the QDs, The density of the QDs decreased abruptly by this collapse and most of them disappeared at above $600^{\circ}C$.

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.61-61
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• 1993