Photoluminescence Studies of ZnO Nanostructures Fabricated by Using Combination of Hydrothermal Method and Plasma-Assisted Molecular Beam Epitaxy Regrowth

  • Nam, Giwoong (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University) ;
  • Kim, Byunggu (Department of Nano Engineering, Inje University) ;
  • Park, Youngbin (Department of Nano Engineering, Inje University) ;
  • Kim, Soaram (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University) ;
  • Lee, Sang-Heon (School of Chemical Engineering, Yeungnam University) ;
  • Kim, Jong Su (Department of Physics, Yeungnam University) ;
  • Leem, Jae-Young (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
  • Published : 2013.08.21

Abstract

ZnO nanostructure was fabricated on a Si substrate using two-step growth. The seed layer was grown on the Si substrate by a sol-gel spin-coating. In the first step, ZnO nanorods were grown by a hydrothermal method at $140^{\circ}C$ for 5 min. In the second step, a ZnO thin film was grown on the ZnO nanorods by spin-coating. After growth, these films were annealed at $800^{\circ}C$ for 10 min. Electrical and optical properties of ZnO nanostructures have modified by plasma-assisted molecular beam epitaxy (PA-MBE) regrowth. The carrier concentration and resistivity increased by PA-MBE regrowth. In the photoluminescence, the full width at half maximum and intensity were decreased and increased, respectively, by PA-MBE regrowth.

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