• 제목/요약/키워드: Mobility fluctuation

검색결과 20건 처리시간 0.033초

Analysis and Remedy of TFT Based Current Mode Logic Circuit Performance Degradation due to Device Parameter Fluctuation

  • Lee, Joon-Chang;Jeong, Ju-Young
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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    • pp.535-538
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    • 2005
  • We report the influence of the threshold voltage and mobility fluctuation in TFT on current mode digital circuit performance. We found that the threshold voltage showed more serious circuit malfunction. We studied new circuit configuration for improvement.

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Temporal and Spatial Traffic Analysis Based on Human Mobility for Energy Efficient Cellular Network

  • Li, Zhigang;Wang, Xin;Zhang, Junsong;Huang, Wei;Tian, Ye
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • 제15권1호
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    • pp.114-130
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    • 2021
  • With the drastic growth of Information and Communication Technology (ICT) industry, global energy consumption is exponentially increased by mobile communications. The huge energy consumption and increased environmental awareness have triggered great interests on the research of dynamic distribution of cell user and traffic, and then designing the energy efficient cellular network. In this paper, we explore the temporal and spatial characteristics of human mobility and traffic distribution using real data set. The analysis results of cell traffic illustrate the tidal effect in temporal and spatial dimensions and obvious periodic characteristics which can be used to design Base Station (BS) dynamic with sleeping or shut-down strategy. At the same time, we designed a new Cell Zooming and BS cooperation mode. Through simulation experiments, we found that running in this mode can save about 35% of energy consumption and guarantee the required quality of service.

MOCVD에 의한 GaAs/AlGaAs 초격자 및 HEMT 구조의 성장 (Growth of GaAs/AlGaAs Superlattice and HEMT Structures by MOCVD)

  • 김무성;김용;엄경숙;김성일;민석기
    • 대한전자공학회논문지
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    • 제27권2호
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    • pp.81-92
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    • 1990
  • MOCVD에 의하여 초격자 및 HEMT 구조를 성장하고 그 특성을 보고한다. GaAs/AlGaAs의 경우, 주기성(periodicity),계면 급준성, Al 조성 균일성을 경사연마 및 double crystal x-ray 측정에 의하여 확인하였고, 고립 양자우물의 양자효과(quantum size effect)에 의한 PL(photoluminescence) 스펙트럼을 관측하였다. 이 PL FWHM (full width at half maximum)과 우물 두께의 관계로 부터 계면 급준성이 1 monolayer fluctuation 정도인 초격자 구조가 성장되었음을 확인하였다. 한편, HEMT 구조의 경우에 헤테로 계면에 형성된 2차원 전자층의 존재를 C-V profile, SdH(shu-bnikov-de Haas)진동, 저온 Hall 측정을 통하여 확인하였다. 저온 Hall 측정에서 15K에서 sheet carrier density $5.5{\times}10^{11}cm^-2$,mobility $69,000cm^2/v.sec$, 77K에서 sheet carrier density $6.6{\times}10^{11}cm^-2$, mobility $41,200cm^2/v.sec$ 이었다. 또한 quantum Hall effect 측정으로 부터 잘 형성된 SdH 진동 및 quantized Hall plateau를 관측하였다.

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주파수 영역에서 비틀림진동에 의한 저속 2행정 디젤엔진을 갖는 추진축계의 피로강도 해석 (Fatigue Strength Analysis of Propulsion Shafting System with Two Stroke Low Speed Diesel Engine by Torsional Vibration in Frequency Domain)

  • 김상환;이돈출
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2007년도 춘계학술대회논문집
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    • pp.416-422
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    • 2007
  • Prime movers in most large merchant ships adapt two stroke low speed diesel engine which has higher efficiency, mobility and durability. However, severe torsional vibration in these diesel engines may be induced by higher fluctuation of combustion pressures. Consequently, it may lead sometimes to propulsion shafting failure due to the accumulated fatigue stresses. Shaft fatigue strength analysis had been done traditionally in time domain but this method is complicated and difficult in analysing bi-modal vibration system such as the case of cylinder misfiring condition. In this paper authors introduce an assessment method of fatigue strength estimation for propulsion shafting system with two stroke low speed diesel engine in the frequency domain.

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산화막과 질화막 위에 제작된 3D SONOS 다층 구조 플래시 메모리소자의 1/f 잡음 특성 분석 (The 1/f Noise Analysis of 3D SONOS Multi Layer Flash Memory Devices Fabricated on Nitride or Oxide Layer)

  • 이상율;오재섭;양승동;정광석;윤호진;김유미;이희덕;이가원
    • 한국전기전자재료학회논문지
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    • 제25권2호
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    • pp.85-90
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    • 2012
  • In this paper, we compared and analyzed 3D silicon-oxide-nitride-oxide-silicon (SONOS) multi layer flash memory devices fabricated on nitride or oxide layer, respectively. The device fabricated on nitride layer has inferior electrical properties than that fabricated on oxide layer. However, the device on nitride layer has faster program / erase speed (P/E speed) than that on the oxide layer, although having inferior electrical performance. Afterwards, to find out the reason why the device on nitride has faster P/E speed, 1/f noise analysis of both devices is investigated. From gate bias dependance, both devices follow the mobility fluctuation model which results from the lattice scattering and defects in the channel layer. In addition, the device on nitride with better memory characteristics has higher normalized drain current noise power spectral density ($S_{ID}/I^2_D$>), which means that it has more traps and defects in the channel layer. The apparent hooge's noise parameter (${\alpha}_{app}$) to represent the grain boundary trap density and the height of grain boundary potential barrier is considered. The device on nitride has higher ${\alpha}_{app}$ values, which can be explained due to more grain boundary traps. Therefore, the reason why the devices on nitride and oxide have a different P/E speed can be explained due to the trapping/de-trapping of free carriers into more grain boundary trap sites in channel layer.

Electronic and Optical Properties of amorphous and crystalline Tantalum Oxide Thin Films on Si (100)

  • Kim, K.R.;Tahir, D.;Seul, Son-Lee;Choi, E.H.;Oh, S.K.;Kang, H.J.;Yang, D.S.;Heo, S.;Park, J.C.;Chung, J.G.;Lee, J.C.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.382-382
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    • 2010
  • $TaO_2$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility in achieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFETchannel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. The atomic structure of amorphous and crystalline Tantalum oxide ($TaO_2$) gate dielectrics thin film on Si (100) were grown by utilizing atomic layer deposition method was examined using Ta-K edge x-ray absorption spectroscopy. By using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy (REELS) the electronic and optical properties was obtained. In this study, the band gap (3.400.1 eV) and the optical properties of $TaO_2$ thin films were obtained from the experimental inelastic scattering cross section of reflection electron energy loss spectroscopy (REELS) spectra. EXAFS spectra show that the ordered bonding of Ta-Ta for c-$TaO_2$ which is not for c-$TaO_2$ thin film. The optical properties' e.g., index refractive (n), extinction coefficient (k) and dielectric function ($\varepsilon$) were obtained from REELS spectra by using QUEELS-$\varepsilon$(k, $\omega$)-REELS software shows good agreement with other results. The energy-dependent behaviors of reflection, absorption or transparency in $TaO_2$ thin films also have been determined from the optical properties.

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Band alignment and optical properties of $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ gate dielectrics thin films on p-Si (100)

  • Tahir, D.;Kim, K.R.;Son, L.S.;Choi, E.H.;Oh, S.K.;Kang, H.J.;Heo, S.;Chung, J.G.;Lee, J.C.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.381-381
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    • 2010
  • $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility inachieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFET channel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gapswere obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of $ZrO_2$. In addition, The dielectric function (k, $\omega$), index of refraction n and the extinction coefficient k for the $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-$\varepsilon$(k, $\omega$)-REELS software package. These optical properties are similar with $ZrO_2$ dielectric thin films.

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광대역 이동통신을 위한 적응등화기의 설계 (Design of adaptive equalizer for wide-band mobile communications)

  • 이찬복;최승원
    • 전자공학회논문지A
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    • 제32A권1호
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    • pp.14-25
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    • 1995
  • The main contribution of this paper can be summarized in two items as follws. Firstly, a modelling of mobile communication channel with Rayleigh fading characteristics is presented. Actual signal environments can be approximated as being real measurements by a proper mathematical representation of fluctuation of channel parameters due to Doppler effect, that is determined by the relative speed between transmitter and receiver, and noises, that vary at each sampling time. Secondly, an alternative procedure of synthesizing an adaptive equalizers is presented for recovering original signals that have been corrupted through the modelled channel. In order to compute the optimal tap coefficients for a high speed data(512 k symbol/sec) on a real-time basis, the CGM that guarantees fast and stable convergency is adopted during the training period of each frame. The coefficients obtained by the CGM are used as initial values for the LMS algorithm to trace the optimal coefficients during the data period that vary at each sampling time due to the mobility and noise at the receiver. Using the modelling presented in this paper, distributions of received signal power in various signal environments are demonstrated. The performance of the eqalizer proposed in this paper is shown as a function of BER under the various signal circumstances of mobile communications.

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유동층반응기에서 촉매를 이용한 메탄 열분해 (Thermal Decompostion of Methane Using Catalyst in a Fluidized Bed Reactor)

  • 장현태;이지윤;차왕석
    • 한국산학기술학회논문지
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    • 제9권2호
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    • pp.487-492
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    • 2008
  • 본 논문은 유동층반응기에서 메탄 열분해에 의한 수소 생산과 탄소 생성에 대한 연구를 수행하였다. 환경에 대한 영향을 최소화한 상태에서 one-step에 의한 메탄의 전환반응을 메탄 분해촉매활성에 영향을 미치는 인자에 대하여 연구하였다. 측정된 압력요동특성치의 해석을 통하여 유동층 열분해촉매의 유동화현상을 측정하였으며, 유동화특성에 따른 메탄열분해능을 측정하였다. 메탄의 분해능는 생성되는 수소의 농도로부터 측정하였다. 유동층의 특성인 층내 입자 이동성, U-Umf, 마모, 비산유출, 유동화가스의 효율밀도에 따른 분해효율에 미치는 영향을 고찰하였다.

High Quality Network and Device Aware Multimedia Content Delivery for Mobile Cloud

  • Saleem, Muhammad;Saleem, Yasir
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • 제13권10호
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    • pp.4886-4907
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    • 2019
  • The use of mobile devices is increasing in multimedia applications. The multimedia contents are delivered to mobile users over heterogeneous networks. Due to fluctuation in bandwidth and user mobility, the service providers are facing difficulties in providing Quality of Service (QoS) guaranteed delivery for multimedia applications. Multimedia applications depend on QoS parameters such as delay, bandwidth, and jitter to offer better user experience. The existing schemes use the single source and multisource delivery but are unable to balance between stream quality and network congestion for mobile users. We proposed a Quality Oriented Multimedia Content Delivery Scheme (QOMCDS) for the mobile cloud to deliver better quality multimedia contents for the mobile user. The multimedia contents are delivered to the mobile device based on the device's parameters and network environment. The objective video quality assessment models like Peak Signal-to-Noise Ratio (PSNR), Structural Similarity (SSIM), and Video Quality Measurement (VQM) are used to measure the quality of the video. The client side Quality of Experience metric such as Startup delay, Rebuffering events, and Bitrate switch count was used for evaluation. The proposed scheme is evaluated using dash.js and is compared to existing schemes. The results show significant improvement over existing multimedia content delivery schemes.