• Title/Summary/Keyword: MoS$_2$

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Friction Reduction with Oil-Soluble Organo-Molybdenum Compound and Environmental Effect (유용성 몰리브덴 화합물의 마찰감소 작용과 분위기효과)

  • 김영환
    • Tribology and Lubricants
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    • v.16 no.3
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    • pp.223-230
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    • 2000
  • Factors influencing friction reduction with MODTP(molybdenum dialkyl dithiophosphate) lubricant were investigated through a frictioning experiment using two-cylinder edge surface frictioning tester and XPS surface analysis. The friction reduction effect gained with MoDTP lubricant appeared to be largely attributable to MoS$_2$ formation on the frictioning interface. Under N$_2$ atmosphere, Mo diffused into the metal substrate, easily escaping from MoS$_2$ so the friction reduction effect from MoDTP was not gained. However, when an oxide surface film was preliminary prepared on frictioning surface, this Mo diffusion to metal substrate from MoS$_2$ was effectively inhibited. Then desired lubulication effect of MoDTP was gained even under N$_2$atmosphere. As such, the existence of a surface oxide film on the frictioning surface was concluded to be of essential importance in order to gain a lubrcating effect with MoDTP.

High Temperature Electrical Behavior of 2D Multilayered MoS2

  • Lee, Yeon-Seong;Jeong, Cheol-Seung;Baek, Jong-Yeol;Kim, Seon-Guk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.377-377
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    • 2014
  • We demonstrate the high temperature-dependent electrical behavior at 2D multilayer MoS2 transistor. Our previous reports explain that the extracted field-effect mobility of good device was inversely proportional to the increase of temperature. Because scattering mechanism is dominated by phonon scattering at a well-designed MoS2 transistor, having, low Schottky barrier. However, mobility at an immature our $MoS_2$ transistor (${\mu}m$ < $10cm^2V^{-1}s^{-1}$) is proportional to the increase temperature. The existence of a big Schottky barrier at $MoS_2-Ti$ junction can reduce carrier transport and lead to lower transistor conductance. At high temperature (380K), the field-effect mobility of multilayer $MoS_2$ transistor increases from 8.93 to $16.9cm^2V^{-1}sec^{-1}$, which is 2 times higher than the value at room temperature. These results demonstrate that carrier transport at an immature $MoS_2$ with a high Schottky barrier is mainly affected by thermionic emission over the energy barrier at high temperature.

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A Study on the Lubricational Characteristics of Automotive Piston Motions With $MoS_{2}$ and PTFE Coating Materials ($MoS_{2}$와 PTFE 코팅재료에 의한 자동차 피스톤 운동의 윤활특성 연구)

  • Oh, Seong-Mo;Mun, Sang-Don
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.16 no.2
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    • pp.57-62
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    • 2007
  • The lubricational characteristics about friction wear has an effect on the material quality of surface. In this paper, we studied the lubricational characteristics through the surface modification experiment by spray coating the surface with $MoS_{2}$ and PTFE solid lubricants. In the case of $MoS_{2}$ and PTFE coating, the friction coefficient of Journal is lower than that for noncoating so the friction characteristics is excellent. In particular, the beginning characteristics of $MoS_{2}$ coating is excellent, and in the case of PTFE coating, seizure dose not appear seizure. $MoS_{2}$ and PTFE coating are excellent in the extreme pressure at high load. The wear characteristics is excellent in the following order; PTFE < $MoS_{2}$ < Non Coating. For Non coating, seizure appears at the beginning due to the heat, but in the case of $MoS_{2}$ and PTFE coating, it will have the excellent heat stability even at high temperature.

Controllable Growth of Single Layer MoS2 and Resistance Switching Effect in Polymer/MoS2 Structure

  • Park, Sung Jae;Chu, Dongil;Kim, Eun Kyu
    • Applied Science and Convergence Technology
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    • v.26 no.5
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    • pp.129-132
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    • 2017
  • We report a chemical vapor deposition approach and optimized growth condition to the synthesis of single layer molybdenum disulfide ($MoS_2$). Obtaining large grain size with continuous $MoS_2$ atomically thin films is highly responsible to the growth distance between molybdenum trioxide source and receiving silicon substrate. Experimental results indicate that triangular shape $MoS_2$ grain size could be enlarged up to > 80um with the precisely controlled the source-to-substrate distance under 7.5 mm. Furthermore, we demonstrate fabrication of a memory device by employing poly(methyl methacrylate) (PMMA) as insulating layer. The fabricated devices have a PMMA-$MoS_2$/metal configuration and exhibit a bistable resistance switching behavior with high/low-current ratio around $10^3$.

Characteristics of Friction and Wear of Polymer/MoS$_2$ Composites (고분자/$MoS_2$ 복합재료의 마찰 및 마모특성)

  • 문탁진;윤호규
    • Tribology and Lubricants
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    • v.5 no.1
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    • pp.12-20
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    • 1989
  • The friction and wear behavior of molybdenum disulfide filled polymer composites sliding against metal has been investigated using pin-on-disc machine and microscope. The observed wear rates were reduced by the addition of MoS$_2$ to nylon and this can be attributed to the homogenous transfer of MoS$_2$ to the counteddace thereby modifying sliding conditions. The friction of filled and unfilled nylon was increased with increasing sliding speed, and the catastropic wear rate was occurred at high normal load. This have been explained by thermal degradation. In the case of HDPE, however, the wear rate was not always reduced by the addition of MoS$_2$ and the influence of MoS$_2$ was mainly even the opposite. Filled and unfilled HDPE had lower values of friction and wear rate than those of nylon. Micrographs appeared that the delamination of the worn surface in nylon/MoS$_2$ composite occurred and revealed that the worn surface of HDPE presented a number of characteristic features as wear grooves, pulls, and smears and crescents.

Wear Characteristics and Thermal Stability of PA66/silane treated MoS2 Composites

  • Nam, Ki-dong;Gu, Bo-ram;Ryu, Sung-hun
    • Elastomers and Composites
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    • v.55 no.4
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    • pp.339-346
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    • 2020
  • We functionalized a wear-resistant carbon-based MoS2 filler to solve its limited wear condition problem. The filler exhibits excellent lubricative properties. The surface modification of MoS2 was carried out using a (3-glycidyloxypropyl)trimethoxysilane (GPTMS) silane coupling agent to improve the low compatibility and dispersibility of the filler that generally degrade the performance of composites. A silane coupling agent was employed for the functionalization of MoS2, and its effect on the wear resistance of MoS2/Polyamide-6,6 was investigated. The silanization of MoS2 was identified by contact angle analysis and Fourier-transform infrared, energy dispersive X-ray, and X-ray photoelectron spectroscopies. The wear resistance of the composite was found to be improved significantly by the surface functionalization of MoS2.

The Charge-Discharge Performance of $Li/MoS_2$ Battery with liquid Electrolyte of Tetra(ethylene glycol] Dimethyl Ether[TEGDME] (TEGDME 액체 전해질을 사용한 $Li/MoS_2$ 전지의 충.방전 특성)

  • Kwon, Jeong-Hui;Ryu, Ho-Suk;Kim, Ki-Won;Ahn, Jou-Hyeon;Jeong, Yong-Su;Lee, Kun-Hwan;Ahn, Hyo-Jun
    • Journal of Hydrogen and New Energy
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    • v.20 no.3
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    • pp.238-244
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    • 2009
  • We investigated the electrochemical properties of lithium/molybdenum sulfide(Li/MoS$_2$) using tetra (ethylene glycol) dimethyl ether(TEGDME) electrolyte. The Li/TEGDME/MoS$_2$ cell showed the first discharge capacity of 288mAhg$^{-1}$. From the XRD, SEM results of the MOS$_2$ electrode in various cut-off voltage during charge-discharge process, MoS$_2$ partly changed into Li$_2$S and Mo during discharge and Li$_2$S partly recovered into MOS$_2$ and Li during charge. Full charged MOS$_2$ electrode showed lump shape of big size, which might be related to agglomerate of MoS$_2$ particles. Therefore, the degradation might be related to decrease of active material for electrochemical reaction by agglomeration of MOS$_2$.

Fabrication of resistive switching memory by using MoS2 layers grown by chemical vapor deposition

  • Park, Sung Jae;Qiu, Dongri;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.298.1-298.1
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    • 2016
  • Two-dimensional materials have been received significant interest after the discovery of graphene due to their fascinating electronic and optical properties for the application of novel devices. However, graphene lack of certain bandgap which is essential requirement to achieve high performance field-effect transistors. Analogous to graphene materials, molybdenum disulfide ($MoS_2$) as one of transition-metal dichalcogenides family presents considerable bandgap and exhibits promising physical, chemical, optical and mechanical properties. Here we studied nonvolatile memory based on $MoS_2$ which is grown by chemical vapor deposition (CVD) method. $MoS_2$ growth was taken on $1.5{\times}1.5cm^2$ $SiO_2$/Si-substrate. The samples were analyzed by Raman spectroscopy, atomic force microscopy and X-ray photoelectron spectroscopy. Current-voltage (I-V) characteristic was carried out HP4156A. The CVD-$MoS_2$ was analyzed as few layers and 2H-$MoS_2$ structure. From I-V measurement for two metal contacts on CVD-$MoS_2$ sample, we found typical resistive switching memory effect. The device structures and the origin of nonvolatile memory effect will be discussed.

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Comparative Photoluminescence Study of Single-Layer MoS2 Annealed in Hydrogen and Vacuum

  • Ryu, Ye-Jin;Park, Min-Gyu;Ryu, Sun-Min
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.195.1-195.1
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    • 2014
  • 최근 반자성 물질인 $MoS_2$를 수소 기체 속에서 열처리하게 되면 약한 강자성이 유발된다는 연구가 보고되었다. 본 연구에서는 강자성 발현을 수반하는 물리적 및 화학적 변화를 이해하기 위해서 단일층 $MoS_2$에 대한 라만분광 및 광발광 연구를 수행하였다. 기계적 박리법을 이용하여 $MoS_2$ 결정으로부터 단일층 및 이중층 $MoS_2$를 분리하여 $SiO_2/Si$ 기판에 전사한 후, $200^{\circ}C{\sim}500^{\circ}C$ 영역의 특정 온도에서 1시간 동안 열처리하였다. 배경 기체가 열처리 도중 $MoS_2$에 미치는 영향을 이해하기 위하여 수소 속 반응을 진공 상태와 비교하였다. 라만 스펙트럼에서는 큰 변화가 없었으나, 광발광의 세기는 수소 속 반응 후에 감소하고 진공 속 반응 후에는 증가하는 대조적인 결과를 보였다. AFM 측정으로부터는 열처리 후에 $MoS_2$ 표면에 뚜렷한 변화가 일어나지 않는다는 사실을 확인하였다. 본 발표에서는 수소와 진공 조건에서 관찰된 상이한 광발광 특성과 그래핀/$SiO_2/Si$에서 관찰된 p-형 도핑과의 상관관계를 설명하고자 한다.

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