• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.168-168
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• 2012

본 연구에서는 Molybdenum oxide (MoOx)-doped 4,4',4"-tris[2-naphthyl(amino)] triphenylamine(2-TNATA)의 P-doping에 의한 hole ohmic contact과 fullerene (C60)/lithium (LiF)의 electron ohmic contact에 의한 All Ohmic contact를 이용한 유기 발광 다이오드 (OLEDs)의 광저항 특성의 향상을 설명한다. 이 소자의 성능은 MoOx-doped 2-TNATA의 두께와 도핑농도에 큰 영향을 받는다. glass/ITO/MoOx-doped 2-TNATA (100 nm)/Al 구조의 소자에서 MoOx-doped 2-TNATA 도핑 농도가 25%에서 75%로 증가할수록 hole only device의 hole ohmic 특성이 향상됐다. 그 이유는 p-type doping effect 때문이다. 또한 photoemission spectra 분석결과, p-type doping effect는 hole-injecting barrier 높이는 낮추고, hole conductivity는 향상되었다. 이것은 2-TNATA에 도핑된 MoOx의 전하전송 콤플렉스의 형성으로 hole carrier의 수가 증가하여 발생되었다. MoOx-doped 2-TNATA의 hole ohmic contact과 fullerene (C60)/lithium fluoride (LiF)의 electron ohmic contact 으로 구성된 glass/ITO/MoOx-doped 2-TNATA (75%, 60 nm)/NPB (10 nm)/Alq3 (35 nm)/C60 (5 nm)/LiF (1 nm)/Al (150 nm)의 소자구조는 6,4V에서 127,600 cd/m2 최대 휘도와 약 1,000 cd/m2에서 4.7 lm/W의 높은 전력 효율을 보여준다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.294.1-294.1
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• 2016

Transition metal dichalcogenides (TMDs) with two-dimensional layered structure, such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2), are considered attractive materials for future semiconductor devices due to its relatively superior electrical, optical, and mechanical properties. Their excellent scalability down to a monolayer based on the van der Waals layered structure without surface dangling bonds makes semiconductor devices based on TMD free from short channel effect. In comparison to the widely studied transistor based on MoS2, researchs focusing on WSe2 transistor are still limited. WSe2 is more resistant to oxidation in humid ambient condition and relatively air-stable than sulphides such as MoS2. These properties of WSe2 provide potential to fabricate high-performance filed-effect transistor if outstanding electronic characteristics can be achieved by suitable metal contacts and doping phenomenon. Here, we demonstrate the effect of two different metal contacts (titanium and platinum) in field-effect transistor based on WSe2, which regulate electronic characteristics of device by controlling the effective barreier height of the metal-semiconductor junction. Electronic properties of WSe2 transistor were systematically investigated through monitoring of threshold voltage shift, carrier concentration difference, on-current ratio, and field-effect mobility ratio with two different metal contacts. Additionally, performance of transistor based on WSe2 is further enhanced through reliable and controllable n-type doping method of WSe2 by triphenylphosphine (PPh3), which activates the doping phenomenon by thermal annealing process and adjust the doping level by controlling the doping concentration of PPh3. The doping level is controlled in the non-degenerate regime, where performance parameters of PPh3 doped WSe2 transistor can be optimized.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.535-536
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• 2013

본 연구에서는 DC/RF co-sputtering공법을 통해 제작한 In-Mo-O 투명 Mo doping 농도 및 열처리 온도에 따른 전기적, 광학적, 구조적 특성을 분석하고, 최적화된 In-Mo-O 투명전극을 유기태양전지(OPVs)와 유기발광다이오드(OLED)에 적용하여 그 가능성을 평가하였다. Mo doping 농도는 co-sputtering 공정 중 MoO3에 인가되는 radio-frequency (RF) power를 변화시켜 조절되었으며, 투명전극의 광학적 특성 및 전기적 특성 향상을 위해 성막 공정 후 급속 열처리 공정을 온도 별로 진행하였다. In-Mo-O 투명 전극은 Mo 도핑 농도에 영향을 받음을 확인할 수 있었고, 최적화된 Mo doping 파워에서 성막한 In-Mo-O 박막은 급속 열처리 공정 후 면저항 24.57 Ohm/square, 투과도 81.57% (400~1,200 nm wavelength)를 나타내었다. Bulk hetero-junction 기반의 고효율 유기태양전지와 유기발광다이오드 적용하기 위해 본 연구에서 제작된 IMO 투명전극의 구조적 특성, 결정성 및 표면특성은 x-ray diffraction (XRD), atomic force microscopy(AFM), field effect scanning electron microscopy (FE-SEM), High-resolution transmission electron microscopy (HRTEM) 분석을 통해 진행하였다. In-Mo-O 투명 전극상에 제작된 OLEDs와 OPV는 reference ITO 전극에 제작된 OLEDs/OPV와 비교할 때 유사하거나 향상된 특성을 나타내었으며 이는 In-Mo-O 박막이 OLED/OPV용 투명 전극으로 적용이 가능함을 말해준다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.436-439
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• 2000

Change of dielectric loss of use in high relative permitivity capacitor BaTiO$_3$ ceramic depends on Mn doping have been investigated. The powders used in this study were commercial BaTiO$_3$, TiO$_2$and, MnCO$_3$. Sample was fabricated by conventional ceramic process. The quantity of Mn was changed gradually from 0.lmol% to 10mo1%. The sintering densities were reduced with increasing amount of MnCO$_3$. This result is because of increase of low density second phase BaMnO$_3$. When the samples were doped by over 0.2mol% of MnCO$_3$, average grain sizes were enlarge to several tens ${\mu}{\textrm}{m}$. The dielectric losses were reduced by Mn doping to lmol% but, increased from lmol% to 10mo1% gradually.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.299-304
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• 2016

2차원 반도체 소재의 경우 물질종류마다 내포하고 있는 고유결함에 의해서 Fermi-Level Pinning 이 발생하여 이로 인한 Schottky Barrier transistor로 동작을 하게 되며, 이는 접합부에 Carrier Injection 정도와 Schottky Barrier을 통과하는 Tunneling 정도에 의해서 소자의 특성이 결정 된다. 본 연구에서는 시뮬레이션을 통하여 2차원 반도체인 $MoS_2$소자를 설계하고, S/D Doping에 따라 접촉 저항 개선 효과와 소자의 동작특성이 어떠한 영향을 미치는지 연구하여 최대 $250cm^2/V{\cdot}sec$의 field effect mobility 의 결과를 얻었다. 또한 S/D doping 에 따라 각 저항 성분의 영향을 분석하였으며 면저항 및 접촉 저항 둘 다 doping 농도가 증가함에 따라 감소하는 결과를 나타내며, S/D doping의 영향은 접촉저항에서 더 크게 나타났다. 더불어 2차원 반도체의 Resistance network model 을 제안하여 subthreshold 영역에서는 $R_{ic}$, saturation 영역에서는 $R_{ish}$ 가 전체저항에서 주요한 변수로 전체저항식에 포함되어야 한다는 것을 시뮬레이션을 통해서 검증하였다.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.285-287
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• 2016

이황화 몰리브덴(Molybdenum disulfide: $MoS_2$)을 채널(Channel) 물질로 이용하여 metal-oxide-semiconductor(MOS) 구조를 제작하고, 효율적인 제작과정을 제시하였고 특히, Source/Drain의 Doping concentration을 조절하여 효과적인 $MoS_2$ Transistor를 제작 및 시뮬레이션 하였다. 그 후 여러 MOSFET의 특성 분석을 통하여 소자로서의 기능을 확인해보았다. 그리고 특히 채널의 전기적인 특성을 분석하고 채널 내 그리고 contact 사이의 저항 및 mobility의 특성을 알아보았는데, 그 중 Source/Drain Doping Effect와 performance 분석을 통해, 최적화된 $MoS_2$ Transistor를 찾아보았다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.133-133
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• 2010

We studied the thermal and electric effect of 2D and 3D p-n photovoltaic diode structures with and without surface texturing. By analyzing the numerical simulation results of I-V characteristics and lattice temperature distributions, we systematically studied the effect of different texturing structures and different doping concentration on the characteristics of the silicon p-n photovoltaic devices. The, efficiency of the device with the surface texturing shows more than ~ 2% enhancement compared to the reference devices without texturing. The tendency of the efficiency of doping concentration has been studied with boron doping of $10^{14}{\sim}10^{17}cm^{-3}$ and phosphorus doping of $10^{15}cm^{-3}$. In addition to that, the study of changing phosphorus doping of $10^{15}{\sim}10^{18}cm^{-3}$ with boron doping of $10^{14}cm^{-3}$ has been examined. It has been shown that the texturing structure not only improves the light trapping but also plays an important role in the heat radiation.

• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.373-377
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• 2015

이 연구에서는 원자 궤도 함수 기반 DFT 전자구조 계산을 이용해서 최근 각광받고 있는 이차원 물질인 MoS2 monolayer의 S 자리와 Mo 자리에 각각 전자가가 다른 원자를 치환하였을 때의 도핑 특성을 Density of States (DOSs)와 밴드구조 등의 전자구조를 통해 분석해 보았다. S자리에 Cl, Si, I, B, C, Mo 자리에는 Hf, Ta, 그리고 Re을 치환해 보았으며 계산 결과 S자리에 Cl을 치환했을 때 가장 얕은 acceptor level (VBM으로부터 0.08 eV)이 형성되었으며, Mo자리에 Re를 치환했을 때에는 resonant state를 형성하였다. 또한 Mo자리에 Ta를 치환했을 ? 가장 얕은 donor level (CBM으로부터 0.02 eV)가 형성되었다.

• Korean Journal of Materials Research
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• v.30 no.2
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• pp.68-73
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• 2020

Due to its favorable optical properties, Cu₂SnS₃ (CTS) is a promising material for thin film solar cells. Doping, which modifies the absorber properties, is one way to improve the conversion efficiency of CTS solar cells. In this work, CTS solar cells with selenium doping were fabricated on a flexible substrate using sputtering method and the effect of doping on the properties of CTS solar cells was investigated. In XRD analysis, a shift in the CTS peaks can be observed due to the doped selenium. XRF analysis confirmed the different ratios of Cu/Sn and (S+Se)/(Cu+Sn) depending on the amount of selenium doping. Selenium doping can help to lower the chemical potential of sulfur. This effectively reduces the point defects of CTS thin films. Overall improved electrical properties were observed in the CTS solar cell with a small amount of selenium doping, and a notable conversion efficiency of 1.02 % was achieved in the CTS solar cell doped with 1 at% of selenium.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.292-292
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• 2016

Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.