• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.128-131
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• 2009

Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used Monte-Carlo method. We simulated the effect of channeling by Al implantation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the effect of varying the implantation energies and the corresponding doses on the distribution of Al in 4H-SiC. The controlled implantation energies were 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2{\times}10^{14}$ to $1{\times}10^{15}\;cm^{-2}$. The Al ion distribution was deeper with increasing implantation energy, whereas the doping level increased with increasing dose. The effect of post-implantation annealing on the electrical properties of Al-implanted p-n junction diode were also investigated.

• Journal of the Korean Institute of Intelligent Systems
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• v.22 no.6
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• pp.694-699
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• 2012

In this paper, semiconductor package inspection results using white light interferometer with large F.O.V., in order to apply semiconductor product inspection process, are shown. Experimental 3D data repeatability test results for the same special bumps of each substrate are shown. Experimental 3D data repeatability test results for all the bumps in each substrate are also shown. Semiconductor package inspection using white light interferometer with large F.O.V. is very important for the fast 3D data inspection in semiconductor product inspection process. This paper is surely helpful for the development of in-line type fast 3D data inspection machine.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.4
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• pp.242-245
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• 2021

In this work, we fabricated oxide on an n-type silicon substrate through local anodic oxidation (LAO) using atomic force microscopy (AFM). The resulting oxide thickness was measured and its correlation with load force, scan speed and applied voltage was analyzed. The surface oxide layer was stripped using a buffered oxide etch. Ohmic contacts were created by applying silver paste on the silicon substrate back face. LAO was performed at approximately 70% humidity. The oxide thickness increased with increasing the load force, the voltage, and reducing the scan speed. We confirmed that LAO/AFM can be used to create both lateral and, to some extent, vertical shapes and patterns, as previously shown in the literature.

• Corrosion Science and Technology
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• v.20 no.6
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• pp.361-366
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• 2021

Localized corrosion behavior of Ni-based Inconel 718 alloy was investigated by electrochemical anodic polarization techniques in NACE TM 0177 A solution of 5 wt% NaCl + 0.5 wt% acetic acid at room temperature. After the solution heat treated at 1080 ℃ for 2.5 h, Inconel 718 was age-hardened at 780 ℃ for 8 h. The microstructure of the alloy surface was investigated by optical microscopic or scanning electron microscopic technique. The austenitic phase with the presence of metal carbides was observed on the surface of Inconel 718. Metal-carbides such as Nb-Mo and Ti-carbide with diameters of approximately 10 and 3 ㎛, respectively, were formed in Inconel 718. Anodic polarization results revealed that localized corrosion was observed at the interface between austenitic phase of a substrate and metal carbides. Difference in electrochemical property between a metal carbide and an austenitic substrate could provide an initiation site for localized corrosion of Inconel 718 surface.

• Journal of the Korean institute of surface engineering
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• v.56 no.2
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• pp.115-124
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• 2023

Anodization is an electrochemical process that electrochemically converts a metal surface into an oxide layer, resulting in enhanced corrosion resistance, wear resistance, and improved aesthetic appearance. Local anodization, also known as selective anodization, is a modified process that enables specific regions or patterns on the metal surface to undergo anodization instead of the entire surface. Several methods have been attempted to produce oxide layers via localized anodic oxidation, such as using a mask or pre-patterned substrate. However, these methods are often intricate, time-consuming, and costly. Conversely, the direct writing or patterning approach is a more straightforward and efficient way to fabricate the oxide layers. This review paper intends to enhance our comprehension of local anodization and its potential applications in various fields, including the development of nanotechnologies. The application of anodization is promising in surface engineering, where the anodic oxide layer serves as a protective coating for metals or modifies the surface properties of materials. Furthermore, anodic oxidation can create micro- and nano-scale patterns on metal surfaces. Overall, the development of efficient and cost-effective anodic oxidation methods is essential for the advancement of various industries and technologies.

• Journal of Information Display
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• v.2 no.3
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• pp.72-77
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• 2001

Amorphous silicon thin-film transistors (a-Si TFTs) were incorporated into Mo-tip-based triode-type field emitters and diode-type ones of carbon nanotubes for an active-matrix cathode (AMC) plate of field emission displays. Also, we developed a novel surface-treatment process for the Mo-tip fabrication, which gleatly enhanced in the stability of field emission. The field emission currents of AMC plates on glass substrate were well controlled by the gate bias of a-Si TFTs. Active-matrix field emission displays (AMFEDs) with these AMC plates were demonstrated in a vacuum chamber, showing low-voltage matrix addressing, good stability and reliability of field emission, and highly uniform light emissions from the anode plate with phosphors. The optimum design of AMFEDs including a-Si TFTs and a new light shield/focusing grid is discussed.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.62.1-62.1
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• 2010

CIS(CuInSe2)계 화합물 태양전지는 높은 광흡수계수와 열적 안정성 및 조성 조절을 통한 밴드갭 조절이 용이해 고효율 박막 태양전지로 각광 받고 있다. 또한 CIGS 태양전지는 기존의 유리기판 대신 유연한 기판을 사용해 flexible 태양전지 제조가 가능하다. 이러한 유연기판은 보통 stainless steel과 같은 금속 기판이 많이 사용되는데 기존의 soda-lime glass 기판과는 달리 금속기판에는 Na이 첨가되어 있지 않아 별도의 Na첨가를 필요로 한다. Na은 CIGS 흡수층의 조성조절을 용이하게 하여 태양전지의 변환 효율을 향상시키는 역할을 한다. 본 연구에서 기판은 Na이 첨가되어있지 않은 corning glass를 사용 하였으며 NaF를 이용해 Mo가 증착된 기판에 NaF의 두께를 달리하며 증착해 CIGS 흡수층의 grain 사이즈를 비교 하였으며 그 후 태양전지 소자를 제조해 광전특성을 분석하였다. 후면 전극으로 약60nm 두께의 Mo를 DC Sputtering 방법을 이용해 증착 하였다. buffer층으로는 약 50nm의 CdS층을 CBD방법을 이용하여 제조 하였으며 TCO 층으로 약 50nm의 i-ZnO와 약 450nm의 Al-ZnO를 RF Sputtering방법으로 증착 하였다. 마지막으로 앞면 전극으로 약 $1{\mu}m$의 Al을 Thermal Evaporation방법으로 증착하였다. 태양전지 소자의 면적은 $0.49cm^2$로 효율을 비교 분석하였다.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.5
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• pp.915-920
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• 2007

AIN-based film bulk acoustic resonator (FBAR) devices which adopt a membrane-type configuration such as Mo/AIN/bottom-metal/Si are fabricated by employing a novel process. The proposed resonator structure does not require any supporting layer above the substrate, which leads to the reduction in energy loss of the resonators. For all the FBAR devices, the frequency response characteristics are measured and the device parameters, such as return loss and input impedance, are extracted from the frequency responses, and analyzed in terms of the various metals such as Al. Cu, Mo, W used in the bottom-electrode. The mass-loading effect caused by the used bottom-electrode metals is found to be the main reason for the difference revealed in the measured characteristics of the fabricated FBAH devices. The results obtained in this study also show that the degree of match in lattice constant and thermal expansion coefficient hetween piezoelectric layers and electrode metals is crucial to determine the device performance of FEAR.

• Advances in materials Research
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• v.1 no.3
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• pp.183-190
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• 2012

Brazing Mo using Ti and Ti-15-3 foils has been investigated in the experiment. For traditional furnace brazing, solidification shrinkage voids cannot be completely removed from the joint even the brazing temperature increased to 2013 K and 160 ${\mu}m$ thick Ti foil applied in brazing. Similar results are observed from the joint using Ti-15-3 filler. In contrast, the quality of laser brazed joint is much better than that of furnace brazed joint. A sound joint is achieved after laser brazing. Tensile strengths of 418 and 373 MPa are obtained from laser brazed joints at the power of 800W and travel speed of 5 mm/s using Ti and Ti-15-3 fillers, respectively. All laser brazed joints are fractured at the brazed zone and cleavage dominated fractures are widely observed from their fractographs. The Ti base fillers show potential in laser brazing Mo substrate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.233-239
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• 1998

SiC thin films were deposited by chemical vapor deposition method using tetramethylsilane (TMS) and hexamethyldisilane (HMDS). The chamber pressure during the deposition was kept at about 1 torr. Precursor was transported to the reaction chamber by $H_2$gas and SiC deposition was carried out at the reaction temperature of $1200^{\circ}C$. Si-wafer masked with tantalum and MgO single crystal covered with platinum and molybdenum were used as substrates. The selectivity of SiC deposition was observed by comparing the microstructure between metal (Ta, Pt, and Mo) surfaces and substrate surfaces (Si and MgO). The deposited films were identified as the $\beta-SiC$ phase by X-ray diffraction pattern. Also, the deposition -behavior of SiC on each surface was investigated by the scanning electron microscope analysis.