Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Influence of Oxide Fabricated by Local Anodic Oxidation in Silicon

실리콘에 Local Anodic Oxidation으로 만든 산화물의 영향

  • Jung, Seung-Woo (Semiconductor Nano Device Laboratory, Department of Electronic Materials Engineering, Kwang-woon University) ;
  • Byun, Dong-Wook (Semiconductor Nano Device Laboratory, Department of Electronic Materials Engineering, Kwang-woon University) ;
  • Shin, Myeong-Cheol (Semiconductor Nano Device Laboratory, Department of Electronic Materials Engineering, Kwang-woon University) ;
  • Schweitz, Michael A. (Semiconductor Nano Device Laboratory, Department of Electronic Materials Engineering, Kwang-woon University) ;
  • Koo, Sang-Mo (Semiconductor Nano Device Laboratory, Department of Electronic Materials Engineering, Kwang-woon University)
  • 정승우 (광운대학교 전자재료공학과 반도체나노소자연구실) ;
  • 변동욱 (광운대학교 전자재료공학과 반도체나노소자연구실) ;
  • 신명철 (광운대학교 전자재료공학과 반도체나노소자연구실) ;
  • ;
  • 구상모 (광운대학교 전자재료공학과 반도체나노소자연구실)
  • Received : 2021.03.30
  • Accepted : 2021.04.27
  • Published : 2021.07.01
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Abstract

In this work, we fabricated oxide on an n-type silicon substrate through local anodic oxidation (LAO) using atomic force microscopy (AFM). The resulting oxide thickness was measured and its correlation with load force, scan speed and applied voltage was analyzed. The surface oxide layer was stripped using a buffered oxide etch. Ohmic contacts were created by applying silver paste on the silicon substrate back face. LAO was performed at approximately 70% humidity. The oxide thickness increased with increasing the load force, the voltage, and reducing the scan speed. We confirmed that LAO/AFM can be used to create both lateral and, to some extent, vertical shapes and patterns, as previously shown in the literature.

Keywords

Acknowledgement

This work was supported by the Excellent researcher support project of Kwangwoon University in 2021 and the KETEP Global Education Program (20194010000050). The authors thank Prof. Ichimura at Nagoya Institute of Technology for allowing Research-Visit collaboration of graduate students.

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