• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.1-4
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• 1998

Diamond film was deposited on Mo substrate at atmospheric pressure using combustion flame apparatus with the addition of H2. At a temperature above 100$0^{\circ}C$, parts of the film were converted into graphites and these were etched by hydrogen atoms. With increasing $C_2H_2/O_2$ ratio, the nucleation density of the film increased. But the greater part of the film was formed with cauliflower-shaped amorphous carbon. These amorphous carbn were crystallized etching amorphous carbon.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.149-149
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• 2005

• 한국전자현미경학회:학술대회논문집
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• 2000.05a
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• pp.77-79
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• 2000

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1821-1823
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• 1998

In this paper, arbitrarily-shaped microstrip patch antenna in multi-layered is analyzed using spatial domain MoM. The triangular patch function is adopted here as the expansion function for planar arbitrarily-shaped microstrip. For example, an edge-fed rectangular patch antenna on a single-layered substrate is analyzed. The results show the agreement between the calculation and measurement.

• 한국전자현미경학회:학술대회논문집
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• 2003.11a
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• pp.52-55
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• 2003

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.289.1-289.1
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• 2008

• Korean Journal of Materials Research
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• v.27 no.12
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• pp.705-709
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• 2017

The electronic and optical characteristics of molybdenum disulphide ($MoS_2$) film significantly vary with its thickness, and thus a rapid and accurate estimation of the number of $MoS_2$ layers is critical in practical applications as well as in basic researches. Various existing methods are currently available for the thickness measurement, but each has drawbacks. Transmission electron microscopy allows actual counting of the $MoS_2$ layers, but is very complicated and requires destructive processing of the sample to the point where it will no longer be useable after characterization. Atomic force microscopy, particularly when operated in the tapping mode, is likewise time-consuming and suffers from certain anomalies caused by an improperly chosen set point, that is, free amplitude in air for the cantilever. Raman spectroscopy is a quick characterization method for identifying one to a few layers, but the laser irradiation causes structural degradation of the $MoS_2$. Optical microscopy works only when $MoS_2$ is on a silicon substrate covered with $SiO_2$ of 100~300 nm thickness. The last two optical methods are commonly limited in resolution to the micrometer range due to the diffraction limits of light. We report here a method of measuring the distribution of the number of $MoS_2$ layers using a low voltage field emission electron microscope with acceleration voltages no greater than 1 kV. We found a linear relationship between the FESEM contrast and the number of $MoS_2$ layers. This method can be used to characterize $MoS_2$ samples at nanometer-level spatial resolution, which is below the limits of other methods.

• Korean Journal of Materials Research
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• v.2 no.5
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• pp.375-382
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• 1992

Molybdenum silicide films have been prepared by sputtering from a single composite MoS$i_2$ source on both P, B$F_2$respectively implanted (5${\times}10^{15}ions/cm^2$ single crystal and P implanted (5${\times}10^{15}ions/cm^2$) polycrystalline silicon substrates followed by rapid thermal annealing in the ambient of argon. The heat treatment temperatures have been varied in the range of 600-l20$0^{\circ}C$ for 20 seconds. The properties of Mo-silicide and the diffusion behaviors of dopant after the heat treatment are investigated using X-ray diffraction, scanning electron microscopy(SEM) , secondary ions mass spectrometry(SIMS), four-point probe and $\alpha-step.$ Annealing at 80$0^{\circ}C$ or higher resulted in conversion of the amorphous phase into predominantly MoS$i_2$and a lower sheet resistance. There was no significant out-diffusion of dopants from both single crystal and polycrystalline silicon substrate into molybdenum silicide layers during annealing.

• Journal of Bio-Environment Control
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• v.11 no.4
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• pp.168-174
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• 2002

A new circulating hydroponic system was invented for oriental melons grown in the greenhouse. For developing nutrient solution management techniques, we examined the changes of nutrient contents of circulating solution in three different types of new hydroponic systems. The yield and fruit quality of oriental melons in Hydroponics were better than those in soil culture. The substrate culture was appropriate fer hydroponics of oriental melons, and NFT was turned to be the opposite due to the physiological disorder during hot seasons. Yamazaki's melon solution with EC 2.0dS.m$^{[-10]}$ was the most appropriate for oriental melons. The new circulating hydroponic system seemed to be appropriate for oriental melons because of the stable EC, pH and the macro- and micro-element contents. NO$_3$-N, Ca and Mg contents in the circulating solution kept a good balance in all types of hydroponics. However, p content, compared to other types, decreased by the degree of 1 me.L$^{[-10]}$ in perlite medium. K content showed irregular status in perlite but showed the stable status in cocopeat. Generally, microelements, except Mo, showed stable absorption in the substrate culture. However, in NET, most of the elements showed irregular absorption except B and Mn. Microelement absorption, especially Cu, Zn and Mo, decreased during hot seasons.

• Journal of Electrochemical Science and Technology
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• v.10 no.4
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• pp.424-432
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• 2019

Planar BiVO₄ and 3 wt% Mo-doped BiVO₄ (abbreviated as Mo:BiVO₄) film were prepared by the facile spin-coating method on fluorine doped SnO₂(FTO) substrate in the same precursor solution including the Mo precursor in Mo:BiVO₄ film. After annealing at a high temperature of 450℃ for 30 min to improve crystallinity, the films exhibited the monoclinic crystalline phase and nanoporous architecture. Both films showed no remarkably discrepancy in crystalline or morphological properties. To investigate the effect of surface passivation exploring the Al₂O₃ layer, the ultra-thin Al₂O₃ layer with a thickness of approximately 2 nm was deposited on BiVO₄ film using the atomic layer deposition (ALD) method. No distinct morphological modification was observed for all prepared BiVO₄ and Mo:BiVO₄ films. Only slightly reduced nanopores were observed. Although both samples showed some reduction of light absorption in the visible wavelength after coating of Al₂O₃ layer, the Al₂O₃ coated BiVO₄ (Al₂O₃/BiVO₄) film exhibited enhanced photoelectrochemical performance in 0.5 M Na₂SO₄ solution (pH 6.5), having higher photocurrent density (0.91 mA/㎠ at 1.23 V vs. reversible hydrogen electrode (RHE), briefly abbreviated as V_RHE) than BiVO₄ film (0.12 mA/㎠ at 1.23 V_RHE). Moreover, Al₂O₃ coating on the Mo:BiVO₄ film exhibited more enhanced photocurrent density (1.5 mA/㎠ at 1.23 V_RHE) than the Mo:BiVO₄ film (0.86 mA/㎠ at 1.23 V_RHE). To examine the reasons, capacitance measurement and Mott-Schottky analysis were conducted, revealing that the significant degradation of capacitance value was observed in both BiVO₄ film and Al₂O₃/Mo:BiVO₄ film, probably due to degraded capacitance by surface passivation. Furthermore, the flat-band potential (V_FB) was negatively shifted to about 200 mV while the electronic conductivities were enhanced by Al₂O₃ coating in both samples, contributing to the advancement of PEC performance by ultra-thin Al₂O₃ layer.