• 제목/요약/키워드: Mo substrate

검색결과 440건 처리시간 0.026초

Influence of Deposition Conditions on the Adhesion of Sputter-deposited MoS$_2$-Ti Films

  • Kim, Sun-Kyu;Yongliang Li
    • 한국표면공학회지
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    • 제37권1호
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    • pp.1-4
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    • 2004
  • MoS$_2$-Ti films were deposited on SKD-11 tool steel substrate by a D.C. magnetron sputtering system. The influence of deposition parameters on the adhesion of the films was investigated by the scratch test. Crosssection morphology was evaluated using FE-SEM. The plasma etching played an important role on the adhesion of the films. The appropriate etching conditions roughened the surface, resulting In the improved adhesion of the film. The adhesion of the film increased with the interlayer thickness up to 110 nm and then decreased slightly with further increasing of interlayer thickness. The adhesion was highest at a bias voltage of -50 V. Further increase of the bias voltage decreased the film adhesion.

Top형 스핀밸브 구조의 Si 기판에서의 하지층 두께에 따른 자기저항 특성 연구 (Dependence of Magnetoresistance on the Underlayer Thickness for Top-type Spin Valve)

  • 고훈;김상윤;김수인;이창우;김지원;조순철
    • 한국자기학회지
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    • 제17권2호
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    • pp.95-98
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    • 2007
  • 본 연구에서는 하지층으로 사용한 Mo(MoN)의 두께 변화에 따른 스핀밸브 구조의 자기적 특성과 열처리 결과를 비교 검토하였다. 사용된 스핀밸브는 Si 기판/Mo(MoN)$(t{\AA})/NiFe(21{\AA})/CoFe(28{\AA})/Cu(22{\AA})/CoFe(18{\AA})/IrMn(65{\AA})/Ta(25{\AA})$ 구조이다. 또한 본 연구에서는 MoN 하지층을 Si 기판에 증착하여 열처리후 특성을 분석하였다. Mo 박막에 비해 MoN 박막의 질소량이 증가할수록 증착률은 감소하였고, 비저항은 증가하였다. MoN 하지층을 사용한 경우 Mo의 경우보다 하지층 두께 변화($51{\AA}$까지)에 따라 자기저항비와 교환결합력의 변화는 소폭이었다. Mo 하지층의 열처리 온도별 자기저항비는 열처리 전 상온에서 2.86% 이었고, $200^{\circ}C$ 열처리 때 2.91 %로 증가하였다. 이후 열처리 온도를 $300^{\circ}C$까지 증가시키면 자기저항비는 2.91 %에서 2.16%로 감소하였다. 질소 유입량이 1 sccm인 MoN의 열처리 온도별 자기저항비는 열처리 전 상온에서 5.27%, $200^{\circ}C$일때 5.56%증가하였다. 이후 열처리 온도를 $300^{\circ}C$까지 증가시키면 자기저항비는 5.56%에서 4.9%로 감소하였다.

MoOx 기반의 고성능 투명 광검출기 (MoOx-Windowed High-Performing Transparent Photodetector)

  • 박왕희;이경남;김준동
    • 한국전기전자재료학회논문지
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    • 제30권6호
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    • pp.387-392
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    • 2017
  • A high-performing all-transparent photodetector was created by configuring a $MoO_x$/NiO/ZnO/ITO structure on a glass substrate. The ITO bottom layer was applied as a back contact. To achieve the transparent p/n junction, p-type NiO was coated on the n-type ZnO layer. Reactive sputtering was used to spontaneously form the ZnO or NiO layer. In order to improve the transparent photodetector performance, the functional $MoO_x$ window layer was used. Optically, the $MoO_x$ window provided a refractive index layer (n=1.39) lower than that of NiO (n=2), increasing the absorption of the incident light wavelengths (${\lambda}s$). Moreover, the $MoO_x$ window can provide a lower sheet resistance to improve the carrier collection for the photoresponses. The $MoO_x$/NiO/ZnO/ITO device showed significantly better photoresponses of 877.05 (at ${\lambda}$=460nm), 87.30 (${\lambda}$=520 nm), and 30.38 (${\lambda}$=620 nm), compared to 197.28 (${\lambda}$=460 nm), 51.74 (${\lambda}$=520 nm) and 25.30 (${\lambda}$=620 nm) of the NiO/ZnO/ITO device. We demonstrated the high-performing transparent photodetector by using the multifunctional $MoO_x$ window layer.

Se 증발온도가 비진공 공정으로 제조한 CIS 광흡수층에 미치는 영향 (The effects of Se evaporation temperature on CIS absorber layer fabricated by non-vacuum process)

  • 박명국;안세진;윤재호;윤경훈
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2008년도 춘계학술대회 논문집
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    • pp.441-443
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    • 2008
  • A non-vacuum process for fabrication of $CuInSe_2$ (CIS) absorber layer from the corresponding Cu, In solution precursors was described. Cu, In solution precursors was prepared by a room temperature colloidal route by reacting the starting materials $Cu(NO_3)_2$, $InCl_3$ and methanol. The Cu, In solution precursors were mixed with ethylcellulose as organic binder material for the rheology of the mixture to be adjusted for the doctor blade method. After depositing the mixture of Cu, In solution with binder on Mo/glass substrate, the samples were preheated on the hot plate in air to evaporate remaining solvents and to burn the organic binder material. Subsequently, the resultant CI/Mo/glass sample was selenized in Se evaporation in order to get a solar cell applicable dense CIS absorber layer. The CIS absorber layer selenized at $530^{\circ}C$ substrate temperature for 30 min with various Se gas evaporation temperature was characterized by XRD, SEM, EDS.

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비 진공으로 제작한 CIGS 박막 특성 (Characteristics of CIGS film fabricated by non-vacuum process)

  • 박명국;안세진;윤재호;곽지혜;김동환;윤경훈
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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    • pp.19-22
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    • 2009
  • A non-vacuum process for fabrication of $CuIn_xGa_{1-x}Se_2$ (CIGS) absorber layer from the corresponing Cu, In, Ga solution precursors was described. Cu, In, Ga precursor solution was prepared by a room temperature colloidal route by reacting the starting materials $Cu(NO_3)_2$, $InCl_3$, $Ga(NO_3)$ and methanol. The Cu, In, Ga precursor solution was mixed with ethylcellulose as organic binder material for the rheology of the mixture to be adjusted for the doctor blade method. After depositing the mixture of Cu, In, Ga solution with binder on Mo/glass substrate, the samples were preheated on the hot plate in air to evaporate remaining solvents and to burn the organic binder material. Subsequently, the resultant CIG/Mo/glass sample was selenized in Se evaporation in order to get a solar cell applicable dense CIGS absorber layer. The CIGS absorber layer selenized at $530^{\circ}C$ substrate temperature for 1h with various metal organic ratio.

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고분자 기판에 증착한 ITO 박막의 Bending 효과 (Bending Effects of ITO Thin Film Deposited on the Polymer Substrate)

  • 김상모;임유승;최형욱;최명규;김경환
    • 한국전기전자재료학회논문지
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    • 제21권7호
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    • pp.669-673
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    • 2008
  • ITO thin film was deposited on PC substrate in Facing Targets Sputtering (FTS) system with various sputtering conditions. After it is applied to external bending force, we investigated how change the surface and electrical property of as-deposited ITO thin film. As the L(face-plate distance) of substrate decreases, it found that the maximum crack density is increasing at the center position and decreasing crack density as goes to the edge. So to apply same curvature (r) and bending force to PC substrate with ITO thin film, we fixed the L that is equal to curvature radius (2r). Before bending test, ITO thin films that deposited in the input current of 0.4 A and thickness of 200 nm already had biaxial tensile failure because of each different CTE (Coefficient of Thermal Expansion) and Others had been shown no bending or crack. After bending test, all samples had been shown cracks at about 200 times and as increasing the crack density, resistivity increased.

Development of FK506-hyperproducing strain and optimization of culture conditions in solid-state fermentation for the hyper-production of FK506

  • Mo, SangJoon;Yang, Hyeong Seok
    • Journal of Applied Biological Chemistry
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    • 제59권4호
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    • pp.289-298
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    • 2016
  • FK506 hyper-yielding mutant, called the TCM8594 strain, was made from Streptomyces tsukubaensis NRRL 18488 by mutagenesis using N-methyl-N'-nitro-N-nitrosoguanidine, ultraviolet irradiation, and FK506 sequential resistance selection. FK506 production by the TCM8594 strain improved 45.1-fold ($505.4{\mu}g/mL$) compared to that of S. tsukubaensis NRRL 18488 ($11.2{\mu}g/mL$). Among the five substrates, wheat bran was selected as the best solid substrate to produce optimum quantities of FK506 ($382.7{\mu}g/g$ substrate) under solid-state fermentation, and the process parameters affecting FK506 production were optimized. Maximum FK506 yield ($897.4{\mu}g/g$ substrate) was achieved by optimizing process parameters, such as wheat bran with 5 % (w/w) dextrin and yeast extract as additional nutrients, 70 % (v/w) initial solid substrate moisture content, initial medium pH of 7.2, $30^{\circ}C$ incubation temperature, inoculum level that was 10 % (v/w) of the cell mass equivalent, and a 10 day incubation. The results showed an overall 234 % increase in FK506 production after optimizing the process parameters.

Effect of seaweed addition on enhanced anaerobic digestion of food waste and sewage sludge

  • Shin, Sang-Ryong;Lee, Mo-Kwon;Im, Seongwon;Kim, Dong-Hoon
    • Environmental Engineering Research
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    • 제24권3호
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    • pp.449-455
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    • 2019
  • To investigate the effect of seaweed (SW) addition on anaerobic co-digestion of food waste (FW) and sewage sludge (SS), batch experiments were conducted at various substrate concentrations (2.5, 5.0, 7.5, and 10.0 g volatile solids (VS)/L) and mixing ratios ((FW or SS):SW = 100:0, 75:25, 50:50, 25:75, and 0:100 on a VS basis). The effect of SW addition on FW digestion was negligible at low substrate concentration, while it was substantial at high substrate concentrations by balancing the rate of acidogenesis and methanogenesis. At 10 g VS/L, $CH_4$ production yield was increased from 103 to $350mL\;CH_4/g$ VS by SW addition (FW:SW = 75:25). On the other hand, SW addition to SS enhanced the digestion performance at all substrate concentrations, by providing easily biodegradable organics, which promoted the hydrolysis of SS. $k_{hyd}$ (hydrolysis constant) value was increased from 0.19 to $0.28d^{-1}$ by SW addition. The calculation showed that the synergistic $CH_4$ production increment by co-digesting with SW accounted for up to 24% and 20% of total amount of $CH_4$ production in digesting FW and SS, respectively.

급전 기판의 유전상수 및 두께가 개구면 결합 마이크로스트립 패치 안테나의 특성에 미치는 영향 (Effects of the Dielectric Constant and Thickness of a Feed Substrate on the Characteristics of an Aperture Coupled Microstrip Patch Antenna)

  • 박혜린;구환모;김부균
    • 전자공학회논문지
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    • 제51권7호
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    • pp.49-59
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    • 2014
  • 개구면 결합 마이크로스트립 패치 안테나(aperture coupled microstrip patch antenna; ACMPA)의 급전 기판의 유전상수와 두께가 안테나 대역폭과 방사특성에 미치는 영향에 대하여 연구하였다. 급전 기판의 두께가 같은 여러 가지 유전상수의 급전기판을 가지는 ACMPA의 최적화된 반사손실 대역폭은 방사특성의 저하 없이 급전기판의 유전상수가 감소할수록 대역폭이 증가한다. MMIC(monolithic microwave integrated circuit)와 집적화가 가능한 높은 유전상수(${\epsilon}_r=10$)를 가지는 급전 기판을 사용한 ACMPA의 최적화된 반사손실 대역폭은 방사특성의 저하 없이 급전 기판의 두께가 감소할수록 대역폭이 증가한다. 따라서 ACMPA는 MMIC와 집적화하기에 좋은 구조를 가진 패치 안테나이다.

PAFC용 합금 촉매 제조 (Manufacture of Pt-transition Metal Alloy Catalyst for PAFC)

  • 김영우;이주성
    • 공업화학
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    • 제4권4호
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    • pp.692-700
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    • 1993
  • 카본 담체에 백금과 전이금속과의 합금 촉매를 제조하여 촉매의 부식성, 촉매능 및 단전지에서의 전극성능을 전기화학적으로 비교 검토하였다. 그리고 합금촉매의 분석은 XRD로 확인하였다. 본 연구에서 제조된 여러 가지 백금 합금 촉매 중 Pt-Mo/carbon, Pt-Fe-Co/carbon 및 Pt-Fe/carbon 촉매가 보다 우수한 산소 환원 전류밀도를 나타내었으나 Pt-Mo/carbon 촉매의 경우 초기 전극전류의 대부분이 촉매의 부식에 의한 전류임을 확인할 수 있었다. Pt/carbon촉매를 사용하였을 경우 나타난 전극의 전류밀도는 $120mA/cm^2$이었으나 Pt-Fe-Co/carbon 의 경우는 $200mA/cm^2$으로 순수 백금촉매보다 우수한 전극성능을 나타내었다.

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