• 제목/요약/키워드: Mo magnetron sputtering

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Magnetron Sputtering법에 의해 증착한 MoS$_2$ 박막의 고진공하에서의 트라이볼로지적 특성 (Tribological characteristics of sputtered MoS$_2$films with Magnetron Sputtering Method in High Vacuum)

  • 안찬욱;김석삼;이상로
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 2000년도 제32회 추계학술대회 정기총회
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    • pp.406-413
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    • 2000
  • The friction and wear behaviors of Magnetron Sputtered MoS$_2$films were investigated by using a pin on disk type tester which was designed and manufactured for this experiment. The experiment was conducted by using silicon nitride (Si$_3$N$_4$) as a pin material and Magnetron Sputtered MoS$_2$on bearing steel (STB2) as a disk material, under operating conditions that include different surface roughness (Polishing specimen, Grinding specimen)(2types), linear sliding velocities in the range of 22, 44, 66mm/sec (3types), normal loads vary from 9.8N, 19.6N, 29.4N(3types), corresponding to contact pressures of 1.9∼2.7GPa and atmospheric conditions of high vacuum( 1.3${\times}$10$\^$-4/Pa), medium vacuum( 1.3${\times}$10$\^$-l/Pa), ambient air(10$\^$5/Pa)(3types). We investigated fracture mechanism in magnetron sputtered MoS$_2$films with Magnetron Sputtering method in each experiment.

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Deposition and evaluation of MoNx films deposited by magnetron sputtering

  • Ma, Yajun;Li, Shenghua;Jin, Yuansheng;Pan, Guoshun;Wang, Yucong;Tung, Simon C.
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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    • pp.135-136
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    • 2002
  • Molybdenum Nitrided (MoNx) films were deposited by DC planar magnetron sputtering. Silicon wafers and real nitrided stainless steel piston rings are employed as substrates. 12 different combinations of nitrogen and argon partial pressure, from 1:7 to 7:1, were applied to deposit MoNx films. X-ray diffraction (XRD) was used to determine the phase structures of films. When nitrogen vs. argon partial pressure is 1:7, the film is mainly $Mo_2N$ phase. With increase of nitrogen partial pressure, MoN phase emerges, but $Mo_2N$ phase still exists. Composition analysis with atomic emission spectrometry (AES) also agreed with this. The films have very high nanohardness (max 2400Hv) and good adhesion to the substrates.

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Deposition of $(Ti,Cr)N-MoS_2$ Thin Films by D.C Magnetron Sputtering

  • Kim S.K.;Kim J.H.
    • 한국표면공학회지
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    • 제39권2호
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    • pp.70-75
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    • 2006
  • As technology advances, there is a demand for development of hard, solid lubricant coating. (Ti,Cr)N-$MoS_2$, films were deposited on SKD 11 tool steel substrate by co-deposition of $MoS_2$, with (Ti,Cr)N using a D.C. magnetron sputtering process. The influence of the $N_2/Ar$ gas ratio, the deposition temperature, the amount of $MoS_2$ in the films, and the bias voltage on the mechanical and the structural properties of the films were investigated. Wear tests were performed on the films deposited in various conditions.

Magnetron Sputtering 법을 이용한 Mo-Cu 박막의 특성 (Mo-Cu Thin-film Using Magnetron Sputtering Method and their Characterization)

  • 이한찬;문경일;이붕주;신백균
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2011년도 제42회 하계학술대회
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    • pp.1481-1482
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    • 2011
  • 현재 고온 및 부식 침식 환경에 사용되는 재료는 부품의 내구성 및 신뢰성이 수명에 절대적인 영향을 준다. 따라서 내열성, 내식성의 문제를 해결하기 위한 재료의 개발과 함께 표면특성 향상을 위한 코팅기술이 지속적으로 발전되고 있다. 본 연구에서는 전기접점재료의 중요한 특성인 저항 고온 고강도 고내식의 특성을 가지는 차세대 복합소재로써 Mo-Cu를 Magnetron Sputtering 법을 이용하여 박막을 제조하였다. Sputtering 변수로는 파워, 온도, Gas, 공정시간, 조성으로 정하였고 변수에 따른 박막의 특성을 분석하였다. 분석으로는 내열, 내식, 경도, XRD, SEM, EDX, EPMA, 면저항을 측정 하여 조건별 비교 분석하였다.

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단일 합금타겟을 이용한 마크네트론 스퍼터링 공정으로 증착된 MoN-Cu 박막 (MoN-Cu Thin Films Deposited by Magnetron Sputtering with Single Alloying Target)

  • 이한찬;문경일;신백균
    • 한국표면공학회지
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    • 제49권4호
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    • pp.368-375
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    • 2016
  • MoN-Cu thin films were prepared to achieve appropriate properties of high hardness and low friction coefficient, which could be applied to automobile engine parts for reducing energy consumption as well as solving wear problems. Composite thin films of MoN-Cu have been deposited by various processes using multiple targets such as Mo and Cu. However, those deposition with multiple targets revealed demerits such as difficulties in exact control of composition and homogeneous deposition. This study is aiming for suggesting an appropriate process to solve those problems. A single alloying target of Mo-Cu (10 at%) was prepared by powder metallurgy methods of mechanical alloying (MA) and spar plasma sintering (SPS). Thin film of MoN-Cu was then deposited by magnetron sputtering using the single alloying target of Mo-Cu (10 at%). Properties of the resulting MoN-Cu thin film were examined and compared to those of MoN-Cu thin films prepared with double targets of Mo and Cu.

RF 스퍼터법을 이용한 Sr2FeMoO6 박막 제조 및 전기전도 특성 (Preparation of Sr2FeMoO6 Thin Films by RF Magnetron Sputtering and Their Electrical Conduction Properties)

  • 유희욱;선호정
    • 한국전기전자재료학회논문지
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    • 제23권12호
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    • pp.966-972
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    • 2010
  • Single-phase $Sr_2FeMoO_6$ thin films were produced by RF magnetron sputtering for use as electrodes in integrated sensors and found to be good conductors at room temperature. The films were deposited from a powder-type sputtering target under various conditions, and were crystallized by annealing. Elimination of $O_2$ gas during deposition, by the use of a solely Ar sputtering gas under a working pressure as low as possible, and vacuum annealing were important to promote the $Sr_2FeMoO_6$ phase. However, oxygen exclusion from sputtering and annealing was not enough to yield single-phase $Sr_2FeMoO_6$: hydrogen annealing was also required. Film production was optimized by varying the deposition parameters and hydrogen annealing conditions. The film had good electrical conduction, with a low resistivity of $1.6{\times}10^{-2}\Omega{\cdot}cm$ at room temperature.

DC 반응성 스퍼터링법에 의해 제조된 몰리브덴 후면전극과 기판과의 상관특성분석 (The Correlation Properties between Substrate and Molybdenum Back Contacts Fabricated by DC Magnetron Sputtering)

  • 김석기;한상옥
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제49권3호
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    • pp.149-154
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    • 2000
  • Bi-layer Mo films were deposited on soda-lime glass substrates using DC magnetron supttering. Increasing gas pressure, the resistivity varied from $1\times10^{-5}\; to\; 8.3\times10^{-3}\; \Omega.cm$. Furthermore, stress direction yielded compressive-to-tensile transition stress curves. The micro-structure of the compressively-stressed film which had poor adhesion consists of tightly packed columns, but of the tensile-stressed films had less dense structure. Under all gas pressure conditions, Mo films exhibited distinctly increasing optical reflection with decreasing gas pressure. The expansion of (110) peak width with the gas pressure meant the worse crystalline growth. The impurity levels in the Mo film exhibited highly concentrated Na, Se and O elements due to less dense micro-structure. The degree of Na diffusion depends on the type of the glass substrate used and the nature of the Mo film.

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Deposition of (Ti, Cr, Zr)N-$MoS_{2}$ Thin Films by D.C. Magnetron Sputtering

  • Kim, Sun-Kyu;Vinh, Pham-Van
    • 한국표면공학회지
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    • 제39권6호
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    • pp.263-267
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    • 2006
  • As technology advances, there is a demand for development of hard solid lubricant coating. (Ti, Cr, Zr)N-$MoS_2$ films were deposited on AISI H13 tool steel substrate by co-deposition of $MoS_2$ with (Ti, Cr, Zr)N using a D.C. magnetron sputtering process. The influence of the $N_2Ar$ gas ratio, the amount of $MoS_2$ in the films and the bias voltage on the mechanical and structural properties of the films were investigated. The highest hardness level was observed at the $N_2/Ar$ gas ratio of 0.3. Hardness of the films did not change much with the increase of the $MoS_2$ content in the films. As the substrate bias potential was increased, hardness level of the film reached maximum at -150 V. Surface morphology of these films indicated that high hardness was attributed to the fine dome structure.

RF 마그네트론 스퍼터법을 사용한 전도성 SrMoO3 박막 제조 및 전기전도특성 평가 (Preparation of Conductive SrMoO3 Thin Films by RF Magnetron Sputtering and Evaluation of Their Electrical Conduction Properties)

  • 유희욱;선호정
    • 한국전기전자재료학회논문지
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    • 제24권6호
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    • pp.468-472
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    • 2011
  • Conductive $SrMoO_3$ thin films were fabricated by RF magnetron sputtering with the powder-type sputtering target, and annealed for crystallization. When RTP (rapid thermal processing) in vacuum was applied, the fabricated thin films showed the mixed phases of $SrMoO_3$ and $SrMoO_4$, but $SrMoO_3$ phase could be promoted by the lowering of the working pressure during deposition. In order to eliminate $O_2$ gas during deposition and annealing, further lowering of the working pressure and furnace annealing in hydrogen atmosphere were tried. With the optimization of the deposition and annealing conditions, the thin film with nearly single-phase of $SrMoO_3$ was obtained, and it showed good electrical conduction properties with a low resistivity of $2.5{\times}10^{-3}{\Omega}{\cdot}cm$ at room temperature.